IEEE Catalog Number: ISBN:

CFP10CAS-PRT 978-1-4244-5783-0

2010 International Semiconductor Conference (CAS 2010)

Sinaia, Romania 11-13 October 2010

Volume 1 Pages 1-298

1 / 2

VII

CONTENTS

INVITED PAPER

COMPACT PHASED ARRAYS FOR MOBILE TERMINALS, L. Baggen, S. Vaccaro*, D. Llorens del Rio*, G. Langgartner, IMST GmbH, Kamp-Lintfort, Germany, *JAST Lausanne, Switzerland …………………………….

3

INVITED PAPER

THEORETICAL AND EXPERIMENTAL STUDY OF THE EFFECTIVE LINEAR AND NONLINEAR OPTICAL RESPONSE OF NANO-STRUCTURED Si, V. Vlad, Romanian Academy, Bucharest, Romania ………

11

INVITED PAPER

FABRICATION OF GRAPHENE DEVICES, ISSUES AND PROSPECTS, G. Deligeorgis1, G. Konstantinidis2, M. Dragoman3, R. Plana1, 1LAAS-CNRS, Toulouse, France, 2FORTH-IESL- MRG, Heraklion, Crete, Greece, 3IMT-Bucharest, Romania ……………………………………………………..

21

INVITED PAPER

MULTIWALL CARBON-NANOTUBE INTERCONNECTS: RADIAL EFFECTS ON PHYSICAL MODELS AND RESISTANCE CALCULATIONS FOR VARIOUS METAL SUBSTRATES, S. Bellucci1, P. Onorato1,2, Y.N. Shunin3,4, Y.F. Zhukovskii4, N. Burlutskaya3, 1INFN-Lab. Nazionali di Frascati, 2Univ. of Pavia, Italy, 3Information Systems Management Inst., 4Univ. of Latvia, Riga, Latvia .........................................................................................................

27

INVITED PAPER

TECHNOLOGY DRIVEN ARCHITECTURE FOR INTEGRAL PARALLEL EMBEDDED COMPUTING, P. Bumbacea, V. Codreanu, R. Hobincu, L. Petrica, Gh.M. Stefan, “Politehnica” Univ. of Bucharest, Romania ………………………………………………………………………...

35 INVITED PAPER

ADVANCES IN THE PSEUDO-MOSFET CHARACTERIZATION METHOD, I. Ionica1, A. El Hajj Diab1, Y. H. Bae2, X. Mescot1, A. Ohata1, F. Allibert3, S. Cristoloveanu1, 1IMEP-LAHC, MINATEC, Grenoble, France, 2Uiduk Univ., Gyeongju, Korea, 3SOITEC S.A., Crolles, France ……………………...

45

INVITED PAPER

THEORY AND APPLICATIONS OF MILLIMETER WAVE IDENTIFICATION, P. Pursula, V. Viikari, T. Vaha-Heikkila, MilliLab, VTT Technical Research Centre of Finland, Espoo, Finland ..............................

53

PLENARY SESSION 1

PLENARY SESSION 2

PLENARY SESSION 3

VIII

INVITED PAPER

HIGH MOBILITY Si-Ge CHANNELS, AND NOVEL HIGH-k MATERIALS FOR NANO-MOSFETs, W. Yu1, B. Zhang1, E. Durgun-Ozben1, R.A. Minamisawa1, R. Luptak1, M. Hagedorn1, B. Hollander1, J. Schubert1, J.M. Hartmann2, K.K. Bourdelle3, Q.T. Zhao1, D. Buca1, S. Mantl1, 1Inst. of Bio- and Nanosystems, Julich, Germany, 2CEA-LETI, MINATEC, Grenoble, 3SOITEC, Bernin, France ……………………………………………

57 N1.1 RAYLEIGH SCATTERING OF A METAL NANOPARTICLE ON A FLAT

DIELECTRIC SURFACE, V. Sergentu1, D. Esinenco2, L. Sirbu3, I. Voda4, I.M. Tiginyanu1,2, V. Ursaki1, 1Inst. of Applied Physics, 2Technical Univ. of Moldova, 3Inst. of the Electronic Eng. and Industrial Technology, 4Inst. of Chemistry, Chisinau, Moldova ………………………………………………………......................

65

N1.2 QUANTUM CAPACITANCE OF BILAYER GRAPHENE, G.S. Kliros, Hellenic Air-Force Academy, Attica, Greece ………………………………………………………..

69

N1.3 GRAPHENE INK PHOTODETECTOR FOR UV-VIS AND NIR DOMAIN, A. Radoi, A. Cismaru, A. Iordanescu, M. Dragoman, IMT–Bucharest, Romania ………………………………………………………………………..............

73

N1.4 INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS, I. Stavarache, A.-M. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu*, M.L. Ciurea, INCD-FM, Bucharest, “Politehnica” Univ. of Bucharest, Romania …………………………………………………………..

77

N1.5 CNT FILM GROWN ON NANOPOROUS SILICON, E. Czerwosz, E. Kowalska, M. Kozłowski, H. Wronka, F. Craciunoiu*, M. Miu*, A. Dinescu*, Tele&Radio Research Inst., Warsaw, Poland, *IMT-Bucharest, Romania …………………………

81 INVITED PAPER

QUANTUM PHENOMENA DURING ELECTRON TRANSPORT IN InAs NANOWIRES, D. Grutzmacher, Ch. Volk, K. Sladek, K. Weis, S. Estevez Hernandez, H. Hardtdegen, N. Demarina, Th. Schapers, Inst. of Semiconductor, JARA-FIT, Forschungszentrum Jülich, Germany …………….

87 N2.1 TOPOGRAPHY AND STRUCTURE OF NANOCOMPOSITE C-Ni FIELD

EMITTERS, E. Czerwosz1, I. Iwanejko1, A. Kaminska1, J. Rymarczyk1, J. Keczkowska2, M. Suchanska2, F. Craciunoiu3, F. Comanescu3, 1Tele&Radio Research Inst., Warsaw, 2Kielce Univ. of Technology, Kielce, Poland, 3IMT-Bucharest, Romania ……………………………………………………………………

91

Session N1: NANODEVICES & NANOTECHNOLOGY 1 Oral presentations

Session N2: NANODEVICES & NANOTECHNOLOGY 2 Oral presentations

IX

N2.2 NANOCOMPOSITE MEMBRANES BASED ON PLATINUM NANOPARTICLES DISPERSED IN POLYMERIC MATRIX, A. Bragaru, M. Miu, M. Simion, A. Iordanescu, M. Danila, A. Radoi, A. Dinescu, IMT-Bucharest, Romania ……….

95

N2.3 EMISSION EFFICIENCY OF CRYSTALLINE AND AMORPHOUS Si NANOCLUSTERS, T.V. Torchynska, ESFM-National Polytechnic Inst., Mexico …..

99

O1.1 THE CARACTERIZATION OF THE CdS-BASED SOLAR CELL

HETEROJUNCTIONS, T. Potlog, V. Botnariuc, L. Gorceac, N. Spalatu, N. Maticiuc, S. Raievschi, Moldova State Univ., Chisinau, Moldova ………………..

105

O1.2 OPTICAL PROPERTIES OF Fe2O3 FILMS OBTAINED BY SPRAY PYROLYSIS, V. Popescu, G.L. Popescu, E. Indrea*, D.T. Silipas*, R.C. Suciu*, Technical Univ., *National Inst. for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca, Romania …………………………………………………

109

O1.3 DIFFRACTIVE MICROLENSES WITH BINARY FOCAL POINTS ON THE OPTICAL AXIS, M. Mihailescu1, A. Sobetkii2, M. Pelteacu3, “Politehnica” Univ. of Bucharest, 2SC OPTICOAT SRL, Bucharest, 3SC Optoelectronica SRL, Bucharest, Romania ………………………………………………………………………………..

113

O1.4 GRATING LIGHT VALVE BASED ON HIGH REFLECTANCE MICRO-BEAMS: DESIGN BY SIMULATION, F. Comanescu, C. Tibeica, M. Purica, P. Schiopu*, IMT-Bucharest, *“Politehnica” Univ. of Bucharest, Romania ………………………...

117

O1.5 SIMULATION OF PHOTONIC COMPONENTS BASED ON BANDGAP STRUCTURES, M. Kusko, C. Kusko, R. Muller, IMT-Bucharest, Romania ..............

121

O1.6 TWO AXES DETECTOR FOR PHOTOVOLTAIC PANELS’ AUTOMATIC FULL ANGLE ORIENTATION, L. Milea, M. Dascalu, O. Oltu, A. Zafiu*, ”Politehnica” Univ. of Bucharest, *Univ. of Pitesti, Romania ………………………..........................

125 INVITED PAPER

NARROW LINEWIDTH 894 nm DISTRIBUTED FEEDBACK LASERS WITH LATERALLY-COUPLED RIDGE-WAVEGUIDE SURFACE GRATINGS FABRICATED USING NANOIMPRINT LITHOGRAPHY, M. Dumitrescu, J. Telkkala, J. Karinen, A. Laakso, J. Viheriala, T. Leinonen, J. Lyytikainen, L. Toikkanen, M. Pessa, Tampere Univ. of Technology, Finland ………………………………………………………………………….

131

INVITED PAPER

PHOTONIC CRYSTALS FOR PLANAR LASER SOURCES: NEW FUNCTIONALITIES AND OUTLOOK, A. Monmayrant1,2, A. Larrue1,2, J. Campos1,2, O. Gauthier-Lafaye1,2, S. Bonnefont1,2, F. Lozes-Dupuy1,2, 1LAAS-CNRS, Toulouse, 2LAAS, Univ. de Toulouse, France ………………...

143

Session O1: MICROPHOTONICS 1 Poster presentations

Session O2: MICROPHOTONICS 2 Oral presentations

X

O2.1 DESIGN OF A MID INFRARED RESONANT GRATING FILTER, K. Chan Shin Yu1,2, A.-L. Fehrembach3, O. Gauthier-Lafaye1,2, A. Monmayrant1,2, S. Bonnefont1,2, P. Arguel1,2, F. Lozes-Dupuy1,2, A. Sentenac3, 1LAAS-CNRS, Toulouse, 2Univ. of Toulouse, 3Inst. Fresnel, CNRS, Marseille, France ………………

151

O2.2 MICROMACHINING OPTICAL ARRAYS, C. Dunare1, W. Parkes1, T. Stevenson1, A. Michette2, S. Pfauntsch2, M. Shand2, T. Button3, D. Rodriguez Sanmartin3, D. Zhang4, C. Feldman5, R. Willingale5, P. Doel6, H. Wang7, A. Smith8, A. James9, 1Univ. of Edinburgh, 2King’s College London, 3Univ. of Birmingham, UK, 4South Central Univ., Changsha, China, 5Univ. of Leicester, 6Depart. of Physics and Astronomy, Univ. College London, 7Diamond Light Source, Oxfordshire, 8SRS Daresbury Lab., Daresbury, 9Mullard Space Science Lab., Univ. College London, Surrey, UK ……………………………………………………………………………..

155

O2.3 OPTICAL CHARACTERIZATION OF SUPPORTED GOLD NANOPARTICLES FOR PLASMONIC BIOSENSORS, O. Pluchery, E. Lacaze, M. Simion*, M. Miu*, A. Bragaru*, A. Radoi*, Univ. Pierre et Marie Curie, Paris, France, *IMT-Bucharest, Romania ……………………………………………………………………

159 O3.1 ANALYSIS OF THE TEMPERATURE DISTRIBUTION DURING EMBOSSING OF

DIFFRACTIVE OPTICAL ELEMENTS BY NUMERICAL SIMULATION, G. Delette1, E. Pauty1, C. Baum2, R. Voicu3, 1CEA Grenoble – Liten, France, 2Fraunhofer Inst. for Production Technology IPT, Aachen, Germany, 3IMT-Bucharest, Romania ……………………………………………………………………

165

O3.2 PRODUCTION OF NEXT GENERATION BACKLIGHT UNITS BY ADAPTIVE STEP AND REPEAT EMBOSSING, C. Baum, C. Brecher, C. Wenzel, F. Niehaus, K. Rinko*, Fraunhofer Inst. for Production Technology IPT, Aachen, Germany, *Oy Modines Ltd., Helsinki, Finland ………………………………………………………

169

O3.3 HIGH POWER 1100-nm InGaAs/GaAs QUANTUM DOT LASERS, E.-M. Pavelescu, C. Gilfert*, M. Danila, A. Dinescu, J.-P. Reithmaier*, IMT-Bucharest, Romania, *Univ. of Kassel, Germany ……………………………………………………………

173

INVITED PAPER

MICRO- TO NANO- BIOSENSORS AND ACTUATORS INTEGRATED FOR RESPONSIVE DELIVERY OF COUNTERMEASURE, S.F. Peteu1,2, 1R&D Inst. for Plant Protection, Bucharest, Romania, 2Michigan Univ., USA ……….

179

B.1 DETECTION OF DNA BASES IN REAL-TIME VIA NEGATIVE DIFFERENTIAL CONDUCTANCE REGIONS, D. Dragoman, M. Dragoman*, Univ. of Bucharest, *IMT-Bucharest, Romania ……………………………………………………………

191

Session O3: MICROPHOTONICS 3 Oral presentations

Session B: MICROSTRUCTURES FOR BIO & MEDICAL APPLICATIONS Oral presentations

XI

B.2 CARBON NANOTUBE ELECTRODES FOR ELECTROCHEMILUMINESCENCE BIOSENSORS, A. Sanginario, D. Demarchi, M. Giorcelli*, M. Castellino*, Electronics Dept., *Physics Dept., Politecnico di Torino, Italy ………………………

195 M&M.1 DIFFERENCES IN THE GAS SENSING PROPERTIES READOUT WITH n AND

p-TYPE MOX MATERIALS, C.E. Simion, A. Tomescu-Stanoiu, INCD-FM, Bucharest, Romania …………………………………………………………………

201

M&M.2 COVALENTLY IMMOBILIZED CROWN ETHERS ONTO POLYSULFONE MEMBRANES AS MATERIALS FOR SENSORS, C. Trisca-Rusu1,2, A.C. Nechifor2, S.I. Voicu2, G. Nechifor2, 1IMT-Bucharest, 2”Politehnica” Univ. of Bucharest, Romania …………………………………………………………………

205

M&M.3 THE DEVELOPMENT OF A SENSOR ARRAY FOR THE DETECTION AND RECOGNITION OF CHEMICAL WARFARE AGENTS, I. Bucur1, S. Serban1, A. Surpateanu1, N. Cupcea1, C. Viespe2, C. Grigoriu2, C. Toader3, N. Grigoriu3, 1”Politehnica” Univ. of Bucharest, 2INFLPR, Bucharest, 3Scientific Research Centre for NBC Defence and Ecology, Bucharest, Romania ……………..

209

M&M.4 STUDY OF AN ELECTRO-MECHANIC MECHANISM EXPLOITING IN-PLANE ROTATION FOR THE REALIZATION OF TUNEABLE CAPACITORS, P.T. Savadkoohi, B. Margesin, D. Vasilache, F. Giacomozzi, FBK-irst Trento, Italy ..............................................................................................................................

213

M&M.5 A NOVEL CONCEPT FOR LOW DRIFT CHEMICAL SENSING AT MICRO AND NANO-SCALE, C. Cobianu, B. Serban, I. Georgescu, S. Costea, C. Bostan, Honeywell Romania, Bucharest, Romania ………………………………………….

217

M&M.6 USING A PLANAR HALL EFFECT SENSOR FOR SINGLE BEAD DETECTION, M. Volmer, M. Avram*, A.M. Avram*, “Transilvania” Univ., Brasov, *IMT-Bucharest, Romania …………………………………………………………………

221

M&M.7 ANALYSIS OF LIQUIDS AND VISCOELESTIC FILMS BY QUARTZ CRYSTAL MICROBALANCE, I.D. Dulama, Gh.V. Cimpoca, C. Radulescu, I.V. Popescu, I. Bancuta, M. Cimpoca*, I. Cernica*, “Valahia” Univ. of Targoviste, *IMT-Bucharest, Romania …………………………………………………………………

225 MNT.1 LASER ABLATION OF POLYIMIDE THIN FILMS, M.-D. Damaceanu, R.-D.

Rusu, M. Olaru, M. Bruma, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, Romania ………………………………………………………………………………

231

Session M&M: MICROSENSORS AND MICROSYSTEMS Oral presentations

Session MNT: MICRO AND NANO TECHNOLOGY Oral presentations

XII

MNT.2 V-SHAPE THROUGH WAFER VIA MANUFACTURED BY DRIE VARIABLE ISOTROPY PROCESS, D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin, FBK-irst Trento, Italy …………………………………………………

235

MNT.3 LOW STRESS PECVD AMORPHOUS SILICON CARBIDE FOR MEMS APPLICATIONS, M. Avram1, A.M. Avram1, A. Bragaru1, B. Chen2, D.P. Poenar3, C. Iliescu2, 1IMT-Bucharest, Romania, 2Inst. of Bioengineering and Nanotechnology, 3Nanyang Technological Univ., Singapore ………………………..

239

MNT.4 INFLUENCE OF TECHNOLOGICAL PARAMETERS ON THE DYNAMIC BEHAVIOR OF A MEMS ACCELEROMETER, C.D. Comeaga, G. Ionascu, E. Manea*, A. Sandu, L. Bogatu, D. Besnea, ”Politehnica” Univ. of Bucharest, *IMT-Bucharest, Romania …………………………………………………………...

243

MNT.5 SELECTION OF GAS SENSING MATERIALS USING THE HARD SOFT ACID BASE THEORY; APPLICATION TO SURFACE ACOUSTIC WAVE CO2 DETECTION, B. Serban, A. K. Sarin Kumar*, C. Cobianu, O. Buiu, S. Costea, C. Bostan, N. Varachiu, Honeywell Romania, Bucharest, Romania, *HTS-Research, Honeywell Technology Solutions, Bangalore, India ……………………..

247

MNT.6 IMPACT OF LIGHT QUANTUM IN RAPID PHOTOTHERMAL DIFFUSION OF Zn IN GaAs, S.T. Shishiyanu, T.S. Shishiyanu, Technical Univ. of Moldova, Chisinau, Moldova …………………………………………………………………...

251 MW1.1 SUB-MICRON FBAR MODELING INCLUDING FEM SIMULATIONS,

A. Stefanescu, D. Neculoiu, G. Konstantinidis*, A. Cismaru, G. Deligeorgis*, A. Stavrinidis*, A. Muller, IMT-Bucharest, Romania, *FORTH-IESL-MRG Heraklion, Crete, Greece ……………………………………………………………..

257

MW1.2 Ka-BAND RF MEMS PHASE SHIFTERS FOR ENERGY STARVED MILLIMETRE-WAVE RADAR SENSORS, R. Malmqvist1,2, C. Samuelsson1, B. Carlegrim1, P. Rantakari3, T. Vaha-Heikkila3, A. Rydberg2, J. Varis3, 1FOI Swedish Defence Research Agency, Linkoping, 2Uppsala Univ., Sweden, 3VTT Technical Research Centre of Finland, Espoo, Finland …………………………………………………...

261

MW1.3 MICROMACHINING AND NANOPROCESSING OF GaN/SILICON FOR SAW AND UV PHOTODETECTOR MANUFACTURING, A. Muller, G. Konstantinidis*, D. Neculoiu, A. Dinescu, M. Andrulidaki*, A. Stavrinidis*, A. Cismaru, A. Stefanescu, M. Carp, C. Anton, A.A. Muller, R. Gavrila, D. Dascalu, IMT-Bucharest, Romania, *FORTH-ESL-MRG, Heraklion, Crete, Greece ..........................................................................................................................

265

MW1.4 METAMATERIAL MILLIMETER WAVE DIRECTIONAL COUPLER ON SILICON SUBSTRATE, G. Sajin, S. Simion*, F. Craciunoiu, A.-C. Bunea, A.A. Muller, A. Dinescu, IMT-Bucharest, *Military Technical Academy, Bucharest, Romania ……………………………………………………………………………...

269

Session MW1: MICROWAVE AND MILLIMETER WAVE DEVICES, CIRCUITS AND MICROSYSTEMS 1

Oral presentations

XIII

MW1.5 BICMOS LC-TANK CHARACTERIZATION AND EXTRCATION OF SMALL SIGNAL EQUIVALENT CIRCUIT, C. Andrei, G. Bassement, D. Depreeuw, G. Imbert, NXP Semiconductors, France …………………………………………...

273 MW2.1 MICROWAVE FIELD EFFECT TRANSISTOR BASED ON GRAPHENE,

M. Dragoman1, G. Deligeorgis2, D. Neculoiu3, D. Dragoman4, G. Konstantinidis2, A. Cismaru1, R. Plana5, 1IMT-Bucharest, Romania, 2FORTH-IESL-MRG Heraklion, Crete, Greece, 3“Politehnica” Univ. of Bucharest, 4Univ. of Bucharest, Romania, 5LAAS CNRS, Toulouse, France ..............................................

279

MW2.2 SWITCHED LNAS USING GaAs MMIC BASED RF MEMS SWITCHES, R. Malmqvist1, C. Samuelsson1, D. Smith2, T. Vaha-Heikkila3, R. Baggen4, 1FOI Swedish Defence Research Agency, Linkoping, Sweden, 2OMMIC, Limeil-Brevannes, Cedex, France, 3VTT Technical Research Centre of Finland, Espoo, Finland, 4IMSt GmbH, Kamp-Lintfort, Germany ……………………………………

283

MW2.3 ELECTROMAGNETIC DESIGN OF W-BAND CIRCUITS IN LTCC TECHNOLOGY, D. Neculoiu, A.A. Muller, A. Stefanescu, T. Vaha-Heikkila*, I. Petrini, C. Buiculescu, IMT-Bucharest, Romania, *VTT Technical Research Centre of Finland, Espoo, Finland ................................................................................

287

MW2.4 STRUCTURES EXHIBITING LEFT-HANDED PROPERTIES IN MICROWAVE RANGE, M.G. Banciu1, A. Ioachim1, N. Militaru2

, G. Lojewski2, R. Ramer3, 1INCD-FM, Bucharest, 2”Politehnica” Univ. of Bucharest, Romania, 3Univ. of New South Wales, Sydney, Australia ...................................................................................

291

MW2.5 MODELING OF ANTENNA ON PACKAGE FOR THE 60 GHz FREQUENCY BAND APPLICATIONS, A.A. Muller1,2, S. Sinha3, D. Neculoiu1

, D. Dascalu1, 1IMT-Bucharest, 2”Politehnica” Univ. of Bucharest, Romania, 3Pretoria Univ., South Africa ………………………………………………………………………….

295 AM1.1 BEHAVIOR OF THE MAIN PROPETIES OF HARD AND SOFT TYPE

PIEZOCERAMICS WITH TEMPERATURE FROM 2 TO 600 K, C. Miclea, T. Tanasoiu, C.F. Miclea, L. Amarande, M. Cioangher, L. Trupina, A. Iuga, I. Spanulescu*, C.T. Miclea*, C. David*, M. Susu*, INCD-FM, Bucharest, *Hyperion Univ., Bucharest, Romania ………………………………………………

301

Session MW2: MICROWAVE AND MILLIMETER WAVE DEVICES, CIRCUITS AND MICROSYSTEMS 2

Oral presentations

Session AM1: ADVANCED MATERIALS FOR MICRO & NANO SCALE 1 Poster presentations

XIV

AM1.2 THIN FILMS BASED ON BENZOPHENONTETRACARBOXYLIC DIANHYDRIDE AND 4,4’-DIAMINO-3,3’ -DIMETHYLDIPHENYLMETHANE, I. Sava1, S. Chisca1, M. Bruma1, G. Lisa2, C. Buiculescu3, 1“Petru Poni” Inst. of Macromolecular Chemistry, Iasi, 2“Gh. Asachi” Technical Univ. Iasi, 3IMT-Bucharest, Romania ....................................................................................................

305

AM1.3 INVERTASE IMMOBILIZATION ONTO DISPERSED MAGNETIC PARTICLES. SYNTHESIS AND CHARACTERIZATION, V.I. Luntraru, V. Danciulescu, A.C. Nechifor, S.I. Voicu, G. Nechifor, “Politehnica” Univ. of Bucharest, Romania ……………………………………………………………………………...

309

AM1.4 POLYSILOXANES CROSSLINKED BY BISIMIDE BRIDGES, M. Alexandru, E. Hamciuc, A. Nistor, V. Musteata, M. Cazacu, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, Romania …………………………………………

313

AM1.5 EFFECT OF DOPANT ON THE THERMAL AND ELECTRICAL BEHAVIOR OF NANOSTRUCTURED CERIA MATERIALS, N. Cioatera1, V. Parvulescu2, A. Rolle3, R.N. Vannier3, 1Univ. of Craiova, 2Inst. of Physical Chemistry, Bucharest, Romania, 3Unité de Catalyse et de Chimie du Solide, France …………..

317

AM1.6 NEW METHOD FOR TiO2 COVALENT-IONIC FUNCTIONALIZATION WITH DIFFERENT MOLECULES FOR INDUCED PROPERTIES, S. Sava1, L. Iarca1, C. Trisca-Rusu1,2, A.C. Nechifor1, S.I. Voicu1, G. Nechifor1, 1“Politehnica” Univ. of Bucharest, 2IMT-Bucharest, Romania ……………………………………………

321

AM1.7 STUDY OF DIELECTRIC BEHAVIOR OF AROMATIC POLYIMIDE FILMS, S. Chisca, V. Musteata, I. Sava, M. Bruma, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, Romania ............................................................................................

325

AM1.8 STUDY OF THE INTERACTIONS OF IONS IN SILICON: TRANSIENT PROCESSES AND DEFECT PRODUCTION, S. Lazanu, I. Lazanu*, G. Iordache, I. Stavarache, A. Lepadatu, A. Slav, INCD-FM, Bucharest, *Univ. of Bucharest, Romania ………………………………………………………………

329

AM1.9 NEW POLYIMIDES CONTAINING ALIPHATIC SEGMENTS AND THIN FILMS BASED ON THEM, D. Popovici, C. Hulubei, V.E. Musteata, M. Bruma, A. Muller*, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, *IMT-Bucharest, Romania …………………………………………………………………

333

AM1.10 INFLUENCE OF THE DEPOSITION CONDITIONS ON THE PROPERTIES OF TiO2 –Ge NANOCOMPOSITE FILMS SYNTHESIZED BY MAGNETRON CO-SPUTTERING, A. Slav, G.E. Stan, A.C. Galca, INCD-FM, Bucharest, Romania ……………………………………………………………………………..

337

AM1.11 STUDY OF THIN FILMS MADE FROM POLY(AMIDE-IMIDE)S CONTAINING NITRILE GROUPS, E. Hamciuc, I. Bacosca, C. Hamciuc, M. Ignat*, M. Bruma, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, *INCDIE CA, Bucharest, Romania ……………………………………………………………………………..

341

AM1.12 ON THE ELECTRICAL CONDUCTIVITY IN Al:ZnO LAYERS; EXPERIMENTAL INVESTIGATION AND A THEORETICAL APPROACH, R. Plugaru1, N. Plugaru2, S. Mihaiu3, E. Vasile4, 1IMT-Bucharest, 2INCD-FM, Bucharest, 3Inst. of Physical Chemistry “I.G. Murgulescu” Bucharest, 4METAV S.A.-CD, Bucharest, Romania …………………………………………………………………

345

XV

AM1.13 PHOTOCAPACITANCE RELAXATION AND RIGIDITY TRANSITION IN GexAsxSe1-2x AMORPHOUS FILMS, I.A. Vasiliev, M.S. Iovu, E.P. Colomeiko, Inst. of Applied Physics, Chisinau, Moldova ………………………………………..

349

AM1.14 POLYURETHANE NANOFIBERS BY ELECTROSPINNING FOR BIOMEDICAL APPLICATIONS, S. Vlad, C. Ciobanu, D. Macocinschi, D. Filip, M. Butnaru*, L.M. Gradinaru, A. Nistor, “Petru Poni” Inst. of Macromolecular Chemistry, *‘‘Gr.T. Popa’’ Univ. of Medicine and Pharmacy, Iasi, Romania ………………….

353 AM2.1 IONIC CONDUCTIVE SILICA-POLYPYRROLE COMPOSITES OBTAINED BY

IN-SITU POLYMERIZATION, C. Baicea1, A. Ivan1, C. Trisca-Rusu1,2, A.C. Nechifor1, D.I. Vaireanu1, S.I. Voicu1, G. Nechifor1, 1“Politehnica” Univ. of Bucharest, 2IMT-Bucharest, Romania ……………………………………………….

359

AM2.2 DIELECTRIC PROPERTIES OF THIN POLYIMIDE FILMS, R.-D. Rusu, M.-D. Damaceanu, M. Bruma, A. Muller*, “Petru Poni” Inst. of Macromolecular Chemistry, Iasi, *IMT-Bucharest, Romania …………………………………………

363

AM2.3 USING THE COHERENCE CORRELATION INTERFEROMETRY (CCI) TECHNIQUE FOR STUDY TOPOGRAPHY OF THE C-Ni FILMS DEPOSITED ON POROUS SILICON, M. Suchanska, M. Makrenek, J. Swiderski, Kielce Univ. of Technology, Kielce, Poland ………………………………………………..

367

AM2.4 TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA, A.-M. Lepadatu1, I. Stavarache1, S. Lazanu1, V. Iancu2, M.R. Mitroi2, R.R. Nigmatulin3, M.L. Ciurea1, 1INCD-FM, Bucharest, 2“Politehnica” Univ. of Bucharest, Romania, 3Kazan State Univ., Tatarstan, Russia ........................

371

AM2.5 Pd-C FILMS GROWN ON SiO2/Si AND Si SUBSTRATES, R. Diduszko1, E. Czerwosz1, E. Kowalska1, M. Kozlowski1, R. Nietubyc2, F. Craciunoiu3, M. Danila3, 1Tele&Radio Research Inst., Warsaw, 2“Andrzej Soltan” Inst. for Nuclear Studies, Swierk, Poland, 3IMT-Bucharest, Romania ……………………

375

AM2.6 MESOPOROUS CARBON PIPES–SUITABLE MATERIALS FOR PHOTOCATALYTIC SUPPORTS, M. Ignat, C. Pastravanu, E. Popovici, “Al.I. Cuza” Univ. Iasi, Romania …………………………………………………………..

379

AM2.7 ON THE MORPHOLOGY AND TEXTURE OF InN THIN FILMS DEPOSITED BY REACTIVE RF-MAGNETRON SPUTTERING, M. Braic, N.C. Zoita, V. Braic, Nat. Inst. for Optoelectronics, Bucharest, Romania …………………………………

383

AM2.8 SYNTHESIS AND CHARACTERIZATION OF NICKEL COBALT OXIDE THIN FILMS, G. Calin1, M. Irimia1, C. Scarlat2, M. Purica3, F. Comanescu3, F. Iacomi1, 1“Al.I. Cuza” Univ. of Iasi, Romania, 2Inst. of Ion Beam Physics and Materials Research, Dresden, Germany, 3IMT-Bucharest, Romania ..........................

387

Session AM2: ADVANCED MATERIALS FOR MICRO & NANO SCALE 1 Oral presentations

XVI

AM2.9 A SHORT ROUTE OF MICROMETRIC MAGNETITE SYNTHESIS VIA Fe-EDTA THERMAL DECOMPOSITION, M. Chirita, R. Banica, P. Sfirloaga, A. Ieta*, I. Grozescu, Nat. Inst. for Research and Development in Electrochemistry and Condensed Matter, Timisoara, *State Univ. of New York, Oswego, New York …...

391 SD.1 HIGH TEMPERATURE SiC SCHOTTKY DIODES WITH STABLE OPERATION

FOR SPACE APPLICATION, V. Banu1, P. Godignon1, X. Jorda1, M. Vellvehi1, J. Millan1, P. Brosselard2, D. Lopez3, J. Barbero3, 1CNM (CSIC), Spain, 2Lab. Ampere, France, 3ALTER Technology, Spain ...............................................................

397 SD.2 DESIGN OF QUASI-VERTICAL GaN HIGH POWER SCHOTTKY DIODES BASED

ON FIELD PLATE TERMINATION, V. Sundaramoorthy, I. Nistor, ABB Switzerland Ltd., Dattwil, Switzerland ………………………………………………...

401

SD.3 A SELF-CONSISTENT MODEL OF THE STATIC AND SWITCHING BEHAVIOUR OF 4H-SiC DIODES, S. Bellone, F. Della Corte*, L. Di Bene401detto, L. Freda Albanese, G.D. Licciardo, Univ. of Salerno, Fisciano, *Mediterranea Univ. of Reggio Calabria, Italy .....................................................................................................

405

SD.4 AN INDUSTRIAL TEMPERATURE PROBE BASED ON SiC DIODES, F. Draghici1, M. Badila2, G. Brezeanu1, I. Rusu1, F. Craciunoiu3, I. Enache1, 1“Politehnica” Univ. of Bucharest, Romania, 2ON Semiconductor Corporation, Santa Clara, USA, 3IMT-Bucharest, Romania …………………………..

409

SD.5 DESIGN OF LOGIC GATES FOR HIGH TEMPERATURE AND HARSH RADIATION ENVIRONMENT MADE OF 4H-SiC MESFET, M. Alexandru, V. Banu, M. Vellvehi, P. Godignon, J. Millan, IMB-CNM, CSIC, Barcelona, Spain ……………………………………………………………………………………

413 M.1 MACROMODEL ESTABLISHED BY SIMULATIONS FOR THE ANALOG REGIME

OF THE AVALANCHE GATE-CONTROLLED DIODE, A. Rusu, C. Ravariu, Alex. Rusu, D. Dobrescu, D. Cozma, “Politehnica” Univ. of Bucharest, Romania ………….

419

M.2 SELF CONSISTENT PARAMETERIZED PHYSICAL MTJ COMPACT MODEL FOR STT-RAM, A. Nigam, K. Munira, A. Ghosh, S. Wolf, E. Chen*, M.R. Stan, Univ. of Virginia, *Grandis, Inc., USA …………………………………………………………...

423

M.3 VERTICAL SCALING OF MULTI-STACK PLANAR GUNN DIODES, N.J. Pilgrim, A. Khalid*, C. Li*, G.M. Dunn, D.R.S. Cumming*, Univ. of Aberdeen, *Univ. of Glasgow, UK …………………………………………………………………………….

427

M.4 POWER DISSIPATION CONSIDERATIONS IN LOW SIDE SWITCH DESIGN, A. Danchiv, M. Hulub, D. Manta, Infineon Technologies Romania, Bucharest, Romania …………………………………………………………………………………

431

Session SD: WIDE BAND SEMICONDUCTOR DEVICES Oral presentations

Session M: MODELING OF DEVICES AND STRUCTURES Oral presentations

XVII

M.5 A SIMPLE METHOD TO IMPROVE THE ENERGY CAPABILITY OF LARGE DMOS POWER TRANSISTORS, D. Costachescu, M. Pfost, L. Goras*, Infineon Technologies Romania, Bucharest, *“Gh. Asachi” Technical Univ., Iasi, Romania …………………………………………………………………………………

435

M.6 HOT SPOTS INDUCED BY REVERSE LEAKAGE CURRENT FLOW THROUGH THE SEMICONDUCTOR –DIELECTRIC INTERFACE FROM DEVICE PN JUNCTION PERIPHERY, V.V.N. Obreja, A.C. Obreja, K.I. Nuttall*, IMT–Bucharest, Romania, * Univ. of Liverpool, UK ………………………………………...

439

M.7 QUANTITATIVE ASSESSMENT OF THE SINGLE-BAND MODEL IN THE SILICON BASED RESONANT TUNNELLING DEVICES, T. Sandu, IMT–Bucharest, Romania …………………………………………………………………………………

443 IC.1 DESIGN AND ANALYSIS OF A LOW POWER CONSUMPTION HIGH

SPEED FREQUENCY DIVIDER BY 2/3, C. Murtaza, R.A. Cojan, Infineon Technologies Romania, Bucharest, Romania …………………………………..

449

IC.2 RFID 13.56MHz TRANSPONDER IC FRONTEND, V. Chesaru, A. Pieleanu, C. Dan*, M. Bodea*, O2 Micro Romania, Bucharest, *“Politehnica” Univ. of Bucharest, Romania …………………………………………………………….

453

IC.3 A 1.8GHz Gm-C 10th ORDER CHEBYSHEV FILTER IMPLEMENTED IN A 0.35 μm SiGe RF BiCMOS TECHNOLOGY FOR TELECOMMUNICATIONS, R.A. Cojan, B. Delacressonniere*, Technical Univ. “Gh. Asachi”, Iasi, Romania, *CNRS, Univ. de Cergy Pontoise, France …………………………..

457

IC.4 IMAGE PROCESSING USING A CMOS ANALOG PARALLEL ARCHITECTURE, I. Vornicu1, L. Goras1,2, 1“Gh. Asachi” Technical Univ., 2Inst. of Computer Science, Iasi, Romania ……………………………………..

461

IC.5 300mA ADJUSTABLE LDO WITH 10µA GROUND CURRENT, C. Stanescu, R. Iacob*, C. Dinca, C. Caracas, O. Profirescu, ON Semiconductor Romania, Bucharest, Romania, *ON Semiconductor, Santa Clara, U.S.A ……….............

465

IC.6 SUPPLY CONCEPT IN INPUT POWERED TWO CHANNEL SWITCH, I.-I. Cristea, A. Danchiv, Infineon Technologies Romania, Bucharest, Romania …

469

IC&D.1 CMOS MULTIFUNCTIONAL COMPUTATIONAL STRUCTURE WITH

IMPROVED PERFORMANCES, C. Popa, “Politehnica” Univ. of Bucharest, Romania ……………………………………………………………………………..

475

Session IC: RF INTEGRATED CIRCUITS Oral presentations

Session IC&D: IC & DEVICES Poster presentations

XVIII

IC&D.2 FROM SIMULATIONS TO MASKS FOR A BIOFET DESIGN, F. Babarada, C. Ravariu, A. Bajenaru, E. Manea*, ”Politehnica” Univ. of Bucharest, *IMT-Bucharest, Romania …………………………………………………………………

479

IC&D.3 THE ADVANTAGES, LIMITATIONS AND DISADVANTAGES OF Z-SOURCE INVERTER, A. Florescu, O. Stocklosa, M. Teodorescu, C. Radoi, D.A. Stoichescu, S. Rosu, “Politehnica” Univ. of Bucharest, Romania …………………

483

IC&D.4 A 1.5-V POWER SUPPLY INDUCTORLESS LOW NOISE AMPLIFIER WITH 1dB-STEP PROGRAMMABLE GAIN FOR FM-RADIO RECEIVERS, R.A. Cojan, C. Murtaza, Infineon Technologies Romania, Bucharest, Romania ……………….

487

IC&D.5 REDUCING POWER CONSUMPTION ON DATAPATH BUSES, R. Dochia, D. Bogdan, “Politehnica” Univ. of Bucharest, Romania ……………………………

491

IC&D.6 BREAKDOWN OF SEMICONDUCTOR DEVICES AND INFLUENCE OF THE INTERFACE FROM PASSIVATED TERMINATION, V.V.N. Obreja, A.C. Obreja, IMT–Bucharest, Romania …………………………………….

495

IC&D.7 VLSI IMPLEMENTATION OF AN ASSOCIATIVE CONTENT ADDRESSABLE MEMORY BASED ON HOPFIELD NETWORK MODEL, L.M. Ionescu, A.G. Mazare, G. Serban, Univ. of Pitesti, Romania ……….

499

IC&D.8 SIMULATION OF SAW GAS SENSORS WITH POLYMER LAYERS USING THE FINITE ELEMENT METHOD, C.G. Bostan, B. Serban, V. Avramescu, I. Georgescu, Honeywell Romania, Bucharest, Romania ….

503

S.1 PHASE NOISE ANALYSIS OF A TAIL-CURRENT SHAPING TECHNIQUE EMPLOYED ON A BiCMOS VOLTAGE CONTROLLED OSCILLATOR, J.W. Lambrechts, S. Sinha, Univ. of Pretoria, South Africa …………………………

509

S.2 STUDIES ON THE SYNTHESIS OF MANGANESE DOPED ZINC SULFIDE NANOCRYSTALLINE POWDERS USING METHACRYLIC ACID AS ADDITIVE, A.-I. Cadis1, E.-J. Popovici1, E. Bica1, I. Perhaita1, L. Barbu-Tudoran2, E. Indrea3, 1”Raluca Ripan” Inst. for Research in Chemistry, “Babes Bolyai” Univ., 2Electronic Microscopy Centre, “Babes-Bolyai” Univ., 3National Inst. for Research and Development of Isotopic and Molecular Technologies, Cluj-Napoca, Romania ………………………………………………………………………………..

513

S.3 FULLY-INTEGRATED OSCILLATOR IN CMOS TECHNOLOGY, G. Pristavu1, A.-G. Vasilica1,2, M. Apostolescu2, G. Brezeanu1, 1“Politehnica” Univ. of Bucharest, 2ON Semiconductor Romania, Bucharest, Romania ……………………….

517

S.4 SAVAGE16 – 16BIT RISC ARCHITECTURE GENERAL PURPOSE MICROPROCESSOR, A.-S. Gheorghe, C. Burileanu, “Politehnica” Univ. of Bucharest, Romania ……………………………………………………………………

521

Session S: STUDENT PAPERS Oral presentations

XIX

S.5 ANALOG FLOATING GATE APPROACH FOR PROGRAMMABLE CURRENT MIRRORS AND CURRENT SOURCES, A. Negut, A. Manolescu, “Politehnica” Univ. of Bucharest, Romania ………………………………………………………….

525

S.6 DESIGN AND SIMULATION OF A INTEGRATED MACH-ZEHNDER INTERFEROMETER SENSOR, M.R. Ionita, M. Kusko*, “Politehnica” Univ. of Bucharest, *IMT-Bucharest, Romania …………………………………………………

529

S.7 PHOTOCATALYTIC PROPERTIES OF N-DOPED TiO2. THE EFFECT OF THE SYNTHESIS PROCEDURE, C. Pastravanu, I.F. Alexa, I. Cretescu*, E. Popovici, “Al. I. Cuza” Univ., *“Gh. Asachi” Univ., Iasi, Romania …………………………….

533

S.8 OPTICAL PROPERTIES OF CdS THIN FILMS DEPOSITED BY CLOSE SPACE SUBLIMATION, N. Maticiuc, T. Potlog, N. Spalatu, Moldova State Univ., Chisinau, Moldova ………………………………………………………………………………..

537

S.9 SINGLE-PIN MULTI-BIT DIGITAL CIRCUIT CONFIGURATION, A.-O. Petroianu1,2, S.A. Eftimie2, 1“Politehnica” Univ. of Bucharest, 2ON Semiconductor Romania, Bucharest, Romania …………………………………………………………

541