8/13/2019 1sv245
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1SV245
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar
Type
1SV245
UHF SHF Tuning
High capacitance ratio: C2 V/C25 V = 5.7 (typ.)
Low series resistance: rs = 1.2 (typ.)
Excellent C-V characteristics, and small tracking error.
Maximum Ratings (Ta 25C)
Characteristics Symbol Rating Unit
Reverse voltage VR 30 V
Peak reverse voltage VRM 35 (RL10 k) VJunction temperature Tj
125 C
Storage temperature range Tstg 55~125 C
Electrical Characteristics (Ta
25C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage VR IR1 A 30 V
Reverse current IR VR28 V 10 nA
Capacitance C2 V VR2 V, f 1 MHz 3.31 4.55 pF
Capacitance C25 V VR25 V, f 1 MHz 0.61 0.77 pF
Capacitance ratio C2 V/C25 V 5.0 5.7 6.5
Series resistance rs VR1 V, f 470 MHz 1.2 2.0
Note 1: Unites are compounded in one package and are matched to
6.0%.
(min)C
(min)C(max)C
0.06 (VR 2~25 V)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA 1-1E1A
Weight: 0.004 g (typ.)
