-
2002 Fairchild Semiconductor Corporation Rev. A2, September
2002
KSC
1815
NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C
unless otherwise noted
Electrical Characteristics Ta=25C unless otherwise noted
hFE Classification
Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO
Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC
Collector Current 150 mAIB Base Current 50 mAPC Collector Power
Dissipation 400 mWTJ Junction Temperature 125 CTSTG Storage
Temperature -55 ~ 150 C
Symbol Parameter Test Condition Min. Typ. Max. UnitsICBO
Collector Cut-off Current VCB=60V, IE=0 0.1 AIEBO Emitter Cut-off
Current VEB=5V, IC=0 0.1 AhFE1hFE2
DC Current Gain VCE=6V, IC=2mA VCE=6V, IC=150mA
7025
700
VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA
0.1 0.25 VVBE (sat) Base-Emitter Saturation Voltage IC=100mA,
IB=10mA 1.0 VfT Current Gain Bandwidth Product VCE=10V, IC=1mA 80
MHzCob Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.0 pFNF Noise
Figure VCE=6V, IC=0.1mA
RS=10k, f=1Hz1.0 1.0 dB
Classification O Y GR LhFE1 70 ~ 140 120 ~ 240 200 ~ 400 350 ~
700
KSC1815
Audio Frequency Amplifier & High Frequency OSC Complement to
KSA1015 Collector-Base Voltage : VCBO= 50V
1. Emitter 2. Collector 3. Base
TO-921
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2002 Fairchild Semiconductor Corporation
KSC
1815
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer
Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation
VoltageCollector-Emitter Saturation Voltage
Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth
Product
0 4 8 12 16 200
20
40
60
80
100
IB = 400A
IB = 350A
IB = 300A
IB = 250A
IB = 200A
IB = 150A
IB = 100A
IB = 50A
I C[m
A], C
OLL
ECTO
R C
URR
ENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.20.1
1
10
100
VCE=6V
I C[m
A], C
OLL
ECTO
R C
UR
REN
T
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 100010
1000
VCE = 6V
h FE,
DC
CU
RR
ENT
GAI
N
IC[mA], COLLECTOR CURRENT
1 10 100 100010
100
1000
10000
IC=10IB
VCE(sat)
VBE(sat)
V B
E(sa
t), V
CE(
sat)[
mV]
, SAT
UR
ATIO
N V
OLT
AGE
IC[mA], COLLECTOR CURRENT
1 10 100 1000
1
10
100
f=1MHzIE=0
Cob
[pF]
, CAP
ACIT
ANC
E
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 1001
10
100
1000
VCE=6V
f T[M
Hz]
,C
UR
REN
T G
AIN
-BAN
DW
IDTH
PR
OD
UC
T
IC[mA], COLLECTOR CURRENT
-
0.46 0.10
1.27TYP
(R2.29)
3.86
MAX
[1.27 0.20]1.27TYP[1.27 0.20]
3.60 0.20
14.4
7 0
.40
1.02
0.1
0
(0.25
)4.
58 0
.20
4.58 +0.250.15
0.38 +0.100.05
0.38
+0.
10
0.05
TO-92
Package DimensionsK
SC1815
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, September
2002
-
2002 Fairchild Semiconductor Corporation Rev. I1
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This datasheet contains the design specifications forproduct
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