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12) Solid-State Systems12.1 Solid state NMR/EPR
A-Gates J-Gates
12.1 Solid state NMR/EPR12.2 Superconducting systems12.1 Solid state NMR/EPR12.2 Superconducting systems12.3 Semiconductor qubits
|0>
|1>
Spins insolids
Solid-State NMR / EPR12.1
12.1.1 Scaling behavior of NMR quantuminformation processors
12.1.2 31P in silicon12.1.3 [email protected] Other proposals12.1.5 Single-spin readout
Why Solids ?
Liquid state NMR is an excel-lent system for small quantumregisters.
For > 10 qubits, problems arise:- addressability- decoherence
Solids provide possible solutions:- many qubits- local addressing- low temperature
Scaling Behavior
1000
0.001
1
0 10 20# qubits
Sign
al
Signal loss for pps preparation
N
N
CC
C
CC
C
ND3+
O
O-
H
D
H H
H
H
1
A B
3 52
4
6
79
8
1011
12-qubit system: (Mahesh)
L-Histidine
Execution time / ms
Scaling Behavior
2 4 6 8 10 12# Qubits
2 4 6 8 10 12
# Qubits
ln (signal)
2 4 6 8 10 12
Fidelity (simulated)
# Qubits
Solid-State NMR
23Na : I = 3/2 = 2 qubit
mz= -3/2
+3/2
+1/2
-1/2
HQ
-120000-60000060000120000
-5
5
15
25
35
45
-120000-60000060000120000
3
2
1
2
12
−
3
2−
EH. Kampermann, and W.S. Veeman, ’Quan-tum Computing Using Quadrupolar Spinsin Solid State NMR’, Quantum InformationProcessing 1, 327 (2002).
-360000
-260000
-160000
-60000
40000
140000
240000
340000
-120000-60000060000120000
-4,00E+01
-3,00E+01
-2,00E+01
-1,00E+01
0,00E+00
1,00E+01
2,00E+01
3,00E+01
4,00E+01
-120000-60000060000120000
-520000
-420000
-320000
-220000
-120000
-20000
80000
180000
-120000-60000060000120000-1,20E+02
-1,00E+02
-8,00E+01
-6,00E+01
-4,00E+01
-2,00E+01
0,00E+00
2,00E+01
4,00E+01
6,00E+01
-120000-60000060000120000
-400000
-350000
-300000
-250000
-200000
-150000
-100000
-50000
0
50000
-120000-60000060000120000
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-120000-60000060000120000
32
1
2
1
2−
32
−
E
32
1
2
1
2−
32
−
E
32
1
2
1
2−
32
−
E
Electron-Nucleus Systems
Electron-nucleus entanglingin solid malonic acid radical
M. Mehring, J. Mende, and W. Scherer,Phys. Rev. Lett. 90, 153001 (2003).
Pseudopure state preparation “S-Bus”Electron spin mediates
nucleus-nucleus couplings
Ce:CaF2
A-Gates J-Gates
31P in Solicon12.1.2 31P in silicon
The Qubitsnuclear spin = qubitelectron spin = control
31P = shallow donor
H = -ωI Iz - ωS Sz - a I . S
Relevant Interactions
nuclearZeeman
electronZeeman
hyperfine
Qubit
|0>|1>
Transition frequency ω0 = ωI + a/2(high field approximation)
Control
Why 31P in Si ?
Long decoherence times:
Electron spin T2 ~ 60 ms in 28Si @ 7KNuclear spin T1 > 10 h
Excellent technology base
28Si has nuclear spin 0Natural abundance: 4.6% 29Si
Spin-orbit coupling small
Initialization
000000000
Quantumregister
DiVincenzo’s rule 2:Initialization into a well defined state.
|0> =
ground state:
n↑-n↓n↑+n↓
≈ 1electrons:
Boltzmann factor @ 100 mK, 2T:
n↑-n↓n↑+n↓
≈ 5.10-3nuclei:
Initialize nuclear spin qubitby microwave pulse
Initialization
RelaxationDissipation required
Optical spin injection throughSiGe superlattices or quantum dots
Alternatives:
Electrical spin injection
Readout
Modify Frequency : A-Gatesa ~ |ΨΨel(rn)|2H = -ωI Iz - ωS Sz - a I . S
Barrier
Si31P qubit
large
ν0 ~ 90 MHz
|ΨΨel(rn)|
Barrier
A Gate
Si31P qubit
+
small
ν0 ~ 50 MHz (for U ~ 0.7 V)
|ΨΨel(rn)|
Electronic Frequency Tuning
A-Gate Voltage / VNuc
lear
spin
reso
nanc
efr
eque
ncy
/MH
z
Barrier
A Gate
Si31P qubit
+
Barrier
J Gate
Si
+
31P qubit
Modify Couplings : J-Gates
J gate draws electrons into overlap region
coupling operator: HJ = J I1. I2
effective qubit-coupling: 75 kHz depends on B-field, gates
Tuning of Couplings
Donor Separation / nm0 10 20 30
Exc
hang
eFr
eque
ncy
/Hz
109109
1010
1011
1012
2µBB/h = 56 GHz
Donor Placement
How to put exactly one atom at the right position ?
31P+
31P Implantation
Si substrate
AFM Tiphole≥ 4 nm
Focused ion beam
Depositing 31PPhys. Rev. B, 64:161401 (2001).
STM of H-terminated Si surface
Chemisorbed 31P
Phys. Rev. B, 64:161401 (2001).
Hydrogen desorbed
After PH3 dosing
Qubit ReadoutDiVincenzo’s rule 5: Qubit-selective readout.
1) Transfer qubit to electron spin
Gate
31P qubit readout donor
Coupling J
Ene
rgy
|↑↑>
|↑↓+↓↑>
|↑↓-↓↑>
|↓↓>electron spins
2) Transfer to readout donorScan converts |0> toelectron singlet state
nuclear spin
|0> =|1> =
3) Detectionof singlet state
singlet pair can form D-
electrostatic detection of D-
Current State
Xiao et al., Nature, 430, 435 (2004).
Single spin ESR
00
0
0
0
1
2
3
100 200 300 400 500τ (ns)
Q(1
05 e)
31P in Si B0 = 350.3 mT
PMW= 251 W
126 W
63 W
32 W
τ
Stegner et al., Nature Physics 2, 835–838 (2006).
Coherent excitation
GeSi0.23Ge0.77 barrierSi0.15Ge0.85
Si0.4Ge0.6
Si0.23Ge0.77 barriern-Si0.4Ge0.6 ground planeSi-Ge buffer layer
Si substrate
R. Vrijen et al, Phys. Rev. A 62, 012306 (2000)
SiGe Spin-Transistor
Modification of Kane proposal:- Use SiGe heterostructure- Use electron spin instead of nuclear- Only one type of gates needed
g-factor Tuning
g D=2
.00
g T=0
.82
gav=2.00
gate off
Con
duct
ion
Ban
dE
nerg
y/m
eV
z
<111> Substrate
gav~1.5
biased gate
1-qubit gates
also changes Bohr radiuscan be used for 2-qubit gates
M. Friesen et al., PRB 67, 121301 (2003).
Quantum-Dot Qubits
Electrostatically confinedquantum dots in Si - SiGe QW 4 qubits
2 qubits
Gated Exchange
HJ = J S1. S2
J = 0
J ≠ 0 gate
Tuning of exchange in 2-qubit system
4-qubit system
J = 0
J23 = 100 MHz
Endohedral Fullerenes
N@C60, P@C60
0 100 200 3000,1
1
10
100
1000
Temperature / K
Rel
axat
ion
Tim
eT
1/m
s
Decoherence Time
Why N@C60 ?
5
based on dipole-dipolecoupling @ 1 nm
Switching Time
may be ~ 10 ns
vs.
# gates ~108
effusion cell
ion source
ProductionImplantation into empty cages
HMI Berlin
Purification by HPLC
660640620600580560540
C60
N@C60
C60
N@C60
HPLC enrichmentStep (N@C60/C60)
1x (0.05%)6x (~10%)7x (~40%)8x (~65%)
10x (~90%)
Retention time / s
HPLC Chromatograms
338033603340332033003280
HPLC Step2x3x4x5x
10x
Magnetic field / G
EPR Spectra
Nano-PositioningUniversity of Nottingham
C59N on Si
4.6nm
4.6nm
3.8nm
Accuracy of positioning determined by surface lattice constant.
Manipulation process does not induce additional defects on underlying surface
before after
spaceseparate leads
bit 1 bit 2 bit 3
Solid-State Computer
Addressing Qubits
1H 13Cqbit 1
qbit 2
NMR in Liquids
ωω1ωω2
monochromatic radiationaffects only one type of spins
Addressing N@C60
Wires(not to scale)
Current pulses through µm-scale wirescould shift frequencies by multi-MHz
Phys. Rev. A 65, 052309 (2002).
-0.4
-0.2
-0.1
0.1
0.2field / T
-0.4 0 0.2 0.4
position x / µm
for I = 1A, ∆ = 1 µm
Magnetic Field∆
-0.2-0.4 0.2 0.4
0.8
0.6
0.4
0.2
0
dBG/dxT/µm
position x / µm
Field gradient
20
10
∆νMHz
Nearest neighbourfrequency difference
Si
Frequency Selection
Implement 1-qubit gates by frequency- or field switching
PositionResonance frequency
JJ
What about 2-qubit gates?
2-Qubit GatesRequired: Interaction
rθθ
Dipole-dipole coupling
Edd =µ0
4π (1-3cos2θ)γ1 γ2
r3
Edd
h ~ 50 MHz
N@C60, 1.1 nm distance
Switch on / off ?
Switchable Coupling
electron spin
nuclear spin:15N, 31P
+ (Nuclei) : long decoherence timesno coupling
+ (Electrons) : fast gatesstrong coupling
hyperfinecoupling
Use which as Qubits ?
coupling off
passive state:QuInfo in nucleiactivate:SWAP QuInfo
|i> |i+1>SWAP
coupling on
15
+ (Electrons) : fast gatesstrong coupling
• Magnetic ResonanceForce Microscope
• Single Molecule Transistor•Optical Detection viaDiamond N/V center
• Scanning Tunneling MicroscopeElectron Spin Resonance
Single-Spin Readout
Voltage
Currenttip
Magnetic field
Graphite surface
BDPA clusterSpinprecession
STM EPR
First demonstration: Manassen et al., PRL 62, 2531 (1989).
Detect modulation of tunnel current at Larmor frequency
STM-ESR spectra of BDPAon HOPG (red and black) andbare HOPG (blue).
534 536 538 540Frequency (MHz)
STM EPR
C. Durkan and M. E. Welland, Electronic spin detection in molecules using scanning-tunneling microscopy-assisted electron-spin resonance. Appl. Phys. Lett., 80, 458 (2002).
10 nm
200 nm x 200 nm area
485 525 575
TEMPOConventional EPR
Frequency / MHz
STM EPR of TEMPOTEMPO on graphite : S=1/2, I=1 : hyperfine splitting
Single-Spin Detectionby optically detected magnetic resonance
Las
er
Fluorescence
RFRadio frequency / MHz
Flu
ores
cenc
e
J. Wrachtrup, A. Gruber, L. Fleury, and C.v.Borczyskowski, Chem. Phys. Lett. 267, 179 (1997).
single 1H in pentacene
Single-Spin Detectionby optically detected magnetic resonance
Las
er
Fluorescence
RF F. Jelezko, C. Tietz, A. Gruber, I. Popa, A.Nizovtsev, S. Kilin, and J. Wrachtrup, Sin-gle Mol. 2, 255 (2001).
Diamond N/V center
Single Center : Photon Antibunching
τ / µs0.0 0.2 0.4
1
2
0
g(2)(τ) = <I(t) I(t+τ)><I(t)>2
t
EM image
Fluorescence
Single Center : SpectroscopyNV - containing nanocrystals
2700 2800 2900 3000
MW
Z
X,Y
Flu
ores
cenc
e
MW frequency / MHz
N-V
z
x,y
Ene
rgy
N/V
Detecting N@C60 Spins
use N/V center as field probe
2700 2800 2900 3000
Flu
ores
cenc
e
MW frequency / MHz
N
N/V + N@C60
2700 2800 2900 3000
Coupling to N@C60
Control, 99,9 % pure C60
MW frequency / MHz
Single Spin Force Detection
Crystal Lattice Quantum ComputerF. Yamaguchi, and Y. Yamamoto, ‘Crystal latticequantum computer‘, Appl. Phys. A 68, 1 (1999).
Detection e.g. by vibrating cantilever
Superconducting Systems12.2
12.2.1 Charge Qubits12.2.2 Flux Qubits12.2.3 Gate Operations12.2.4 Readout
Superconducting QubitsMacroscopic quantum stateEasily coupled to each otherCan be integrated
Josephson junction
Must operate at < 50 mKNon-dissipative:
Only superconducting elementsElectron temperature < 50 mK
Energy scales:
log
E
0
Relevant ObservablesFlux = phase differenceCharge Q
kT
Harmonic Oscillator
C L
Classical d2Qdt2
QLC+ = 0
Quantum
[ ,Q] = i h
= h0(n+ )12
~Position ~Momentum
2
2L +H = Q2
2C
Typical values:
Dimension ~ 10 µmL ~ 0.1 nHC ~ 1 pF0/2π ~ 16 GHz
Main challenges:Coupling to environmentVariability of engineered circuits
Cooper Pair BoxCoulomb energy of a box:
q2
2CEC =q(2ne)2
2C=2n2e2
C=
H = EC(N-Ng)2
# Cooper pairson island
tunable byoffset voltage
BoxPhase differenceacross junction
tunable by fluxthrough split junction
H = EC(N-Ng)2 - EJ cos
Hamiltonian including tunnel junction
Gate voltage
Ene
rgy
n n+1
Charge Qubit
Box
ReservoirTunnel junction
Control electrode
Qubit Hamiltonian:Qubit states: |n>, |n+1>
Gate voltage
Ene
rgy
Gate Operations
Tuning thez-“field”
Ej
Ej’(’)
Tuning thex-“field”
ΦΦEj
Flux Qubit
Flux Φ
Ene
rgy
ΦΦΦΦ’
Josephson Qubit
box
reservoir
pulse gate1 µm
probedc gate
: tunnel junction: capacitor
box
φ
Rb,Cb
EJ,CJ
Vg
Vp
Vb
Cp
Cg
Flux Qubit
Rabi Oscillations
Resonant Excitation
Rabi pulse duration / nsOcc
upat
ion
prob
abili
tyof
|1>
Current Device
DiC
arlo
etal
.,N
atur
e,46
0,24
0(2
009)
.
Grover Search
Semiconductor Qubits12.3
12.3.1 Materials12.3.2 Excitons in quantum dots12.3.3 Electron spin qubits
Coupled Quantum Dots
Qubits
Dot 1 Dot 2
|00>
Dot 1 Dot 2
|01>
Dot 1 Dot 2
|10>
Dot 1 Dot 2
|11>
Physicalstate
Logicalstate
M. Friesen et al. , Phys. Rev. Lett. 92, 037901 (2004).
QDot Readout
|0>|1>
Single-step readoutby microwave excitation
Irradiation at ν12 creates charge oscillation if qubit is in |1> state
Can also be used for initialization
Asymmetric QW
Spin-Filter Readout
R. Hanson, L.H.W.v. Beveren, I.T. Vink, J.M. Elzerman, W.J.M. Naber, F.H.L. Koppens,L.P. Kouwenhoven, and L.M.K. Vandersypen, ‘Single-Shot Readout of Electron Spin Statesin a Quantum Dot Using Spin-Dependent Tunnel Rates’, Phys. Rev. Lett. 94, 196802 (2005).
∆I Q
PC
(a.u
.)V
P(a
.u.)
time
time
b
c
N =1
waiting time readout
N =1 2
N =2 1
initializationpreparation &
twait
→
→
frac
tion
of’T
’
e
waiting time (ms)twait
0 84
1
0.8
0.6
0.4
0.2
0
α(1
--
)α
β3 Γ
T
3 ΓT
Γ S+
20
∆I Q
PC
(nA
)
40
30
20
10
0
0 1.5time (ms)
d
’T’
’S’
’T’
’S’
’S’
S
T
S
T
S
TS
T
B =0 .02T
S
T1/T1
- /2.58twait0.15+0.80 e
a
200 nm
T
QΓ
rese
rvoi
rIQPC
L P M
Qubits in Quantum DotsElectrostatically controlledpair of quantum dots
Occupation numbers
Qubit
[1] J.M. Elzerman, R. Hanson, J.S. Greidanus, L.H.W.v. Beveren, S.D. Franceschi, L.M.K.Vandersypen, S. Tarucha, and L.P. Kouwenhoven, 'Few-electron quantum dot circuit with integratedcharge read out', PRB 67, 161308 (2003).