100
1 ME1000 RF CIRCUIT DESIGN http://dreamcatcher.asia/cw This courseware product contains scholarly and technical information and is protected by copyright laws and international treaties. No part of this publication may be reproduced by any means, be it transmitted, transcribed, photocopied, stored in a retrieval system, or translated into any language in any form, without the prior written permission of Acehub Vista Sdn. Bhd. or their respective copyright owners. The use of the courseware product and all other products developed and/or distributed by Acehub Vista Sdn. Bhd. are subject to the applicable License Agreement. For further information, see the Courseware Product License Agreement .

1 ME1000 RF CIRCUIT DESIGN This courseware product contains scholarly and technical information and is protected by copyright

Embed Size (px)

Citation preview

Page 1: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

1

ME1000 RF CIRCUIT DESIGN

http://dreamcatcher.asia/cw

This courseware product contains scholarly and technical information and is protected by copyright laws and international treaties. No part of this

publication may be reproduced by any means, be it transmitted, transcribed, photocopied, stored in a retrieval system, or translated into any language in any form, without the prior written permission of Acehub

Vista Sdn. Bhd. or their respective copyright owners.

The use of the courseware product and all other products developed and/or distributed by Acehub Vista Sdn. Bhd. are subject to the applicable

License Agreement.

For further information, see the Courseware Product License Agreement.

Page 2: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

10. RF Oscillators

2

Page 3: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Main References

• [1]* D.M. Pozar, “Microwave engineering”, 2nd Edition, 1998 John-Wiley & Sons.

• [2] J. Millman, C. C. Halkias, “Integrated electronics”, 1972, McGraw-Hill.

• [3] R. Ludwig, P. Bretchko, “RF circuit design - theory and applications”, 2000 Prentice-Hall.

• [4] B. Razavi, “RF microelectronics”, 1998 Prentice-Hall, TK6560.

• [5] J. R. Smith,”Modern communication circuits”,1998 McGraw-Hill.

• [6] P. H. Young, “Electronics communication techniques”, 5th edition, 2004 Prentice-Hall.

• [7] Gilmore R., Besser L.,”Practical RF circuit design for modern wireless systems”, Vol. 1 & 2, 2003, Artech House.

• [8] Ogata K., “Modern control engineering”, 4th edition, 2005, Prentice-Hall.

3

Page 4: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Agenda

• Positive feedback oscillator concepts.• Negative resistance oscillator concepts (typically employed for RF

oscillator).• Equivalence between positive feedback and negative resistance

oscillator theory.• Oscillator start-up requirement and transient.• Oscillator design - Making an amplifier circuit unstable.• Constant |1| circle.• Fixed frequency oscillator design.• Voltage-controlled oscillator design.

4

Page 5: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

1.0 Oscillation Concepts

5

Page 6: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Introduction

• Oscillators are a class of circuits with 1 terminal or port, which produce a periodic electrical output upon power up.

• Most of us would have encountered oscillator circuits while studying for our basic electronics classes.

• Oscillators can be classified into two types: (A) Relaxation and (B) Harmonic oscillators.

• Relaxation oscillators (also called astable multivibrator), is a class of circuits with two unstable states. The circuit switches back-and-forth between these states. The output is generally square waves.

• Harmonic oscillators are capable of producing near sinusoidal output, and is based on positive feedback approach.

• Here we will focus on Harmonic Oscillators for RF systems. Harmonic oscillators are used as this class of circuits are capable of producing stable sinusoidal waveform with low phase noise.

6

Page 7: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

2.0 Overview of Feedback Oscillators

7

Page 8: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Classical Positive Feedback Perspective on Oscillator (1)

• Consider the classical feedback system with non-inverting amplifier,

• Assuming the feedback network and amplifier do not load each other, we can write the closed-loop transfer function as:

• Writing (2.1a) as:

• We see that we could get non-zero output at So, with Si = 0, provided 1-A(s)F(s) = 0. Thus the system oscillates!

8

+

+

E(s) So(s)Si(s)

A(s)

F(s)

sFsAsA

iSoS s

1

sFsAsT PositiveFeedback Loop gain (the gain of the system

around the feedback loop)

Non-inverting amplifier

(2.1a)

(2.1b)

sSsS isFsAsA

o 1

Feedback network

High impedance

High impedance

Page 9: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Classical Positive Feedback Perspective on Oscillator (1)

• The condition for sustained oscillation, and for oscillation to startup from positive feedback perspective can be summarized as:

• Take note that the oscillator is a non-linear circuit, initially upon power up, the condition of (2.2b) will prevail. As the magnitudes of voltages and currents in the circuit increase, the amplifier in the oscillator begins to saturate, reducing the gain, until the loop gain A(s)F(s) becomes one.• A steady-state condition is reached when A(s)F(s) = 1.

9

01 sFsA

1sFsA 0arg sFsA

For sustained oscillation

For oscillation to startup

Barkhausen Criterion (2.2a)

(2.2b)

Note that this is a very simplistic view of oscillators. In reality oscillatorsare non-linear systems. The steady-state oscillatory condition correspondsto what is called a Limit Cycle. See texts on non-linear dynamical systems.

Note that this is a very simplistic view of oscillators. In reality oscillatorsare non-linear systems. The steady-state oscillatory condition correspondsto what is called a Limit Cycle. See texts on non-linear dynamical systems.

Page 10: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Classical Positive Feedback Perspective on Oscillator (2)

• Positive feedback system can also be achieved with inverting amplifier:

• To prevent multiple simultaneous oscillation, the Barkhausen criterion (2.2a) should only be fulfilled at one frequency.• Usually the amplifier A is wideband, and it is the function of the feedback network F(s) to ‘select’ the oscillation frequency, thus the feedback network is usually made of reactive components, such as inductors and capacitors.

10

+

-

E(s) So(s)Si(s)

-A(s)

F(s)

sFsAsA

iSoS s

1

Inverting amplifier

Inversion

Page 11: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Classical Positive Feedback Perspective on Oscillator (3)

• In general the feedback network F(s) can be implemented as a Pi or T network, in the form of a transformer, or a hybrid of these.

• Consider the Pi network with all reactive elements. A simple analysis in [2] and [3] shows that to fulfill (2.2a), the reactance X1, X2 and X3 need to meet the following condition:

11

+

-

E(s) So(s)-A(s)

X1

X3

X2

213 XXX

If X3 represents inductor, thenX1 and X2 should be capacitors.

(2.3)

Page 12: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Classical Feedback Oscillators

• The following are examples of oscillators, based on the original circuit using vacuum tubes.

12

+

-

+

-

+

-Hartleyoscillator

Clapposcillator

Colpittoscillator

+

-

Armstrong oscillator

Page 13: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example of Tuned Feedback Oscillator (1)

13

A 48 MHz Transistor Common -Emitter Colpitt Oscillator

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.0 2.0

-1.0

-0.5

0.0

0.5

1.0

1.5

-1.5

2.0

time, usec

VL,

VV

B, V

+

-

E(s) So(s)Si(s)-A(s)

F(s)

VL

VB

VC

LL1

R=L=2.2 uH

V_DCSRC1Vdc=3.3 V

CCD1C=0.1 uF

CCc1C=0.01 uF

CCc2C=0.01 uF

CCEC=0.01 uF

CC2C=22.0 pF

CC1C=22.0 pF

RRLR=220 Ohmpb_mot_2N3904_19921211

Q1

RRER=220 Ohm

RRCR=330 Ohm

RRB2R=10 kOhm

RRB1R=10 kOhm

Extra

FA

t0

1

Page 14: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example of Tuned Feedback Oscillator (2)

14

A 27 MHz Transistor Common-Base Colpitt Oscilator

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.0 2.0

-400

-200

0

200

400

-600

600

time, usec

VL,

mV

VE

, mV

+

+

E(s) So(s)Si(s)

A(s)

F(s)

VL

VE

VB

VC

RR1R=1000 Ohm

CC1C=100.0 pF

CC2C=100.0 pF

LL1

R=L=1.0 uH C

C3C=4.7 pF

RRB2R=4.7 kOhm

RRER=100 Ohm

RRCR=470 Ohm

V_DCSRC1Vdc=3.3 V

CCc1C=0.1 uF

CCc2C=0.1 uF

CCD1C=0.1 uF

pb_mot_2N3904_19921211Q1

RRB1R=10 kOhm

Extra

Page 15: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example of Tuned Feedback Oscillator (3)

15

VLVC

VB

CCc2C=0.1 uF

CCc1C=0.1 uF

CCEC=0.1 uF

sx_stk_CX-1HG-SM_A_19930601XTL1Fres=16 MHz

CC2C=22.0 pF

CC1C=22.0 pF

V_DCSRC1Vdc=3.3 V

CCD1C=0.1 uF

RRLR=220 Ohmpb_mot_2N3904_19921211

Q1

RRER=220 Ohm

RRCR=330 Ohm

RRB2R=10 kOhm

RRB1R=10 kOhm

A 16 MHz Transistor Common-EmitterCrystal Oscillator

Extra

Page 16: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Limitation of Feedback Oscillator

• At high frequency, the assumption that the amplifier and feedback network do not load each other is not valid. In general the amplifier’s input impedance decreases with frequency, and it’s output impedance is not zero. Thus the actual loop gain is not A(s)F(s) and equation (2.2) breakdowns.

• Determining the loop gain of the feedback oscillator is cumbersome at high frequency. Moreover there could be multiple feedback paths due to parasitic inductance and capacitance.

• It can be difficult to distinguish between the amplifier and the feedback paths, owing to the coupling between components and conductive structures on the printed circuit board (PCB) or substrate.

• Generally it is difficult to physically implement a feedback oscillator once the operating frequency is higher than 500MHz.

16

Page 17: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

3.0 Negative Resistance Oscillators

17

Page 18: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Introduction (1)

• An alternative approach is needed to get a circuit to oscillate reliably.• We can view an oscillator as an amplifier that produces an output when there is

no input.• Thus it is an unstable amplifier that becomes an oscillator!• For example let’s consider a conditionally stable amplifier.• Here instead of choosing load or source impedance in the stable regions of the

Smith Chart, we purposely choose the load or source impedance in the unstable impedance regions. This will result in either |1 | > 1 or |2 | > 1.

• The resulting amplifier circuit will be called the Destabilized Amplifier.

• As seen in Chapter 7, having a reflection coefficient magnitude for 1 or 2 greater than one implies the corresponding port resistance R1 or R2 is negative, hence the name for this type of oscillator.

18

Page 19: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Introduction (2)

• For instance by choosing the load impedance ZL at the unstable region, we could ensure that |1 | > 1. We then choose the source impedance properly so that |1 s | > 1 and oscillation will start up (refer back to Chapter 7 on stability theory).

• Once oscillation starts, an oscillating voltage will appear at both the input and output ports of a 2-port network. So it does not matter whether we enforce |1 s | > 1 or |2 L | > 1, enforcing either one will cause oscillation to occur (It can be shown later that when |1 s | > 1 at the input port, |2 L | > 1 at the output port and vice versa).

• The key to fixed frequency oscillator design is ensuring that the criteria |1 s | > 1 only happens at one frequency (or a range of intended frequencies), so that no simultaneous oscillations occur at other frequencies.

19

Page 20: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Recap - Wave Propagation Stability Perspective (1)

• From our discussion of stability from wave propagation in Chapter 7…

20

Z1 or 1

bs

bs1

bss 1

bss 12

bss 21

2

bss 21

3

Source 2-portNetwork

Zs or sPort 1 Port 2

s

s

sssss

ba

bbba

11

22111

1

...

bss 31

3

bss 31

4

a1b1

Compare with equation (2.1a)

ssbb

s

s

sssss

bb

bbbb

1

11

1

11

231

2111

1

1

...

sFsAsA

iSoS s

1

Similar mathematicalform

Similar mathematicalform

Extra

Page 21: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Recap - Wave Propagation Stability Perspective (2)

• We see that the infinite series that constitute the steady-state incident (a1) and reflected (b1) waves at Port 1 will only converge provided | s1| < 1.

• These sinusoidal waves correspond to the voltage and current at the Port 1. If the waves are unbounded it means the corresponding sinusoidal voltage and current at the Port 1 will grow larger as time progresses, indicating oscillation start-up condition.

• Therefore oscillation will occur when | s1 | > 1.

• Similar argument can be applied to port 2 since the signals at Port 1 and 2 are related to each other in a two-port network, and we see that the condition for oscillation at Port 2 is |L2 | > 1.

21

Extra

Page 22: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (1)

• Generally it is more useful to work with impedance (or admittance) when designing actual circuit.

• Furthermore for practical purpose the transmission lines connecting ZL and Zs to the destabilized amplifier are considered very short (length 0).

• In this case the impedance Zo is ambiguous (since there is no transmission line).

• To avoid this ambiguity, let us ignore the transmission line and examine the condition for oscillation phenomena in terms of terminal impedance.

221ZZ

Zs ZoZ1

DestabilizedAmp. and Load

sZZ

Very short Tline

Page 23: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (2)

• We consider Port 1 as shown, with the source network and input of the amplifier being modeled by impedance or series networks.

• Using circuit theory the voltage at Port 1 can be written as:

23

Source Network

Port 1

Zs Z1

ss

sss

VZZ

ZV

XXjRR

jXRV

1

1

11

11

(3.1)

jXs

Rs

jX1

R1

V ZL

Z2

Vamp

Port 2

Amplifier with load ZL

Page 24: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (3)

• Furthermore we assume the source network Zs is a series RC network and the equivalent circuit looking into the amplifier Port 1 is a series RL network.

• Using Laplace Transform, (3.1) is written as:

24

Rs

Cs

R1

L1

V ZL

Z2

Vamp

Vs

Zs Z1

sVsLRR

sLRsV s

sCs s

111

11

js where

(3.2a)

(3.2b)

Page 25: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (4)

• The expression for V(s) can be written in the “standard” form according to Control Theory [8]:

• The transfer function V(s)/Vs(s) is thus a 2nd order system with two poles p1, p2 given by:

• Observe that if (R1 + Rs) < 0 the damping factor is negative. This is true if R1 is negative, and |R1| > Rs.

• R1 can be made negative by modifying the amplifier circuit (e.g. adding local positive feedback), producing the sum R1 + Rs < 0.

25

22

211

1211

1 2

1

11

1nn

ns

CLLRR

s ss

sLRsC

ss

sLRs

Ls

V

V

s

s

Frequency Natural Factor Damping11

1 1

2

s

s

s

CLnC

L

RR

(3.3a)

where

122,1 nnp (3.4)

(3.3b)

Page 26: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (5)

• Assuming ||<1 (under-damped), the poles as in (3.4) will be complex and exist at the right-hand side of the complex plane. • From Control Theory such a system is unstable. Any small perturbation will result in a oscillating signal with frequency that grows exponentially.

• Usually a transient or noise signal from the environment will contain a small component at the oscillation frequency. This forms the ‘seed’ in which the oscillation builts up.

26

0|1 o

RRs

Re

Im

0

Complex pole pair

Complex Plane

t

A small disturbanceor impulse ‘starts’ theexponentially growingsinusoid

Time Domain

v(t)

12 n

Page 27: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (6)

• When the signal amplitude builds up, nonlinear effects such as transistor saturation and cut-off will occur, this limits the of the transistor and finally limits the amplitude of the oscillating signal.

• The effect of decreasing of the transistor is a reduction in the magnitude of R1 (remember R1 is negative). Thus the damping factor will approach 0, since Rs+ R1 0.

• Steady-state sinusoidal oscillation is achieved when =0, or equivalently the poles become

• The steady-state oscillation frequency o corresponds to n,

27

sCnCLn XXLsns

11

112

1

njp

02,1

01 o

sXX

Page 28: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Oscillation from Negative Resistance Perspective (7)

• From (3.3b), we observe that the steady-state oscillation frequency is determined by L1 and Cs, in other words, X1 and Xs respectively.

• Since the voltages at Port 1 and Port 2 are related, if oscillation occur at Port 1, then oscillation will also occur at Port 2.• From this brief discussion, we use RC and RL networks for the source and amplifier input respectively, however we can distill the more

general requirements for oscillation to start-up and achieve steady-state operation for series representation in terms of resistance and reactance:

28

0|1 o

RRs

0|1 o

XX s

0|1 o

RRs

0|1 o

XX s

(3.6a)

(3.6b)

(3.5a)(3.5b)

Steady-stateStart-up

Page 29: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Illustration of Oscillation Start-Up and Steady-State

• The oscillation start-up process and steady-state are illustrated.

29

0 10 20 30 40 50 60 70 80 90 100 110 120

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

time, nsec

Vbb, V

Vout, V

Destabilized

Amplifier

ZLZs

t

R1+Rs

0

Oscillationstart-up

Steady-state Z1Zs

We need to note that this is a very simplistic view of oscillators. Oscillators are autonomous non-linear dynamical systems, and the steady-state condition is a form of Limit Cycles.

We need to note that this is a very simplistic view of oscillators. Oscillators are autonomous non-linear dynamical systems, and the steady-state condition is a form of Limit Cycles.

Page 30: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Summary of Oscillation Requirements Using Series Network

• By expressing Zs and Z1 in terms of resistance and reactance, we conclude that the requirement for oscillation are.

• A similar expression for Z2 and ZL can also be obtained, but we shall not be concerned with these here.

30

Source Network

Port 1

Zs Z1

jXs

Rs

jX1

R1

V ZL

Z2

Vamp

Port 2

0|1 o

RRs

0|1 o

XX s

0|1 o

RRs

0|1 o

XX s

(3.6a)

(3.6b)

(3.5a)(3.5b)

Steady-state Start-up

Page 31: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

The Resonator

• The source network Zs is usually called the Resonator, as it is clear that equations (3.5b) and (3.6b) represent the resonance condition between the source network and the amplifier input.

• The design of the resonator is extremely important.• We shall see later that an important parameter of the oscillator, the

Phase Noise is dependent on the quality of the resonator.

31

Page 32: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Summary of Oscillation Requirements Using Parallel Network

• If we model the source network and input to the amplifier as parallel networks, the following dual of equations (3.5) and (3.6) are obtained.

• The start-up and steady-state conditions are:

32

jBsGs jB1G1

V ZL

Z2

Vamp

Port 1

0|1 o

GGs

0|1 o

BBs

0|1 o

GGs

0|1 o

BBs

Steady-state Start-up

(3.7a)

(3.7b)

(3.8a)

(3.8b)

Page 33: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Series or Parallel Representation? (1)

• The question is which to use? Series or parallel network representation? This is not an easy question to answer as the destabilized amplifier is operating in nonlinear region as oscillator. • Concept of impedance is not valid and our discussion is only an approximation at best.• We can assume series representation, and worked out the corresponding resonator impedance. If after computer simulation we discover that the actual oscillating frequency is far from our

prediction (if there’s any oscillation at all!), then it probably means that the series representation is incorrect, and we should try the parallel representation.• Another clue to whether series or parallel representation is more accurate is to observe the current and voltage in the resonator. For series circuit the current is near sinusoidal, where as for

parallel circuit it is the voltage that is sinusoidal.

33

Page 34: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Series or Parallel Representation? (2)

• Reference [7] illustrates another effective alternative, by computing the large-signal S11 of Port 1 (with respect to Zo) using CAD software.

• 1/S11 is then plotted on a Smith Chart as a function of input signal magnitude at the operating frequency.

• By comparing the locus of 1/S11 as input signal magnitude is gradually increased with the coordinate of constant X or constant B circles on the Smith Chart, we can decide whether series or parallel form approximates Port 1 best.

• We will adopt this approach, but plot S11 instead of 1/S11. This will be illustrated in the examples in next section.

• Do note that there are other reasons that can cause the actual oscillation frequency to deviate a lot from prediction, such as frequency stability issue (see [1] and [7]).

34

Page 35: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

4.0 Fixed Frequency Negative Resistance

Oscillator Design

35

Page 36: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Procedures of Designing Fixed Frequency Oscillator (1)

• Step 1 - Design a transistor/FET amplifier circuit.• Step 2 - Make the circuit unstable by adding positive feedback at radio

frequency, for instance, adding series inductor at the base for common-base configuration.

• Step 3 - Determine the frequency of oscillation o and extract S-parameters at that frequency.

• Step 4 – With the aid of Smith Chart and Load Stability Circle, make R1 < 0 by selecting L in the unstable region.

• Step 5 (Optional) – Perform a large-signal analysis (e.g. Harmonic Balance analysis) and plot large-signal S11 versus input magnitude on Smith Chart. Decide whether series or parallel form to use.

• Step 6 - Find Z1 = R1 + jX1 (Assuming series form).

36

Page 37: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Procedures of Designing Fixed Frequency Oscillator (2)

• Step 7 – Find Rs and Xs so that R1 + Rs<0, X1 + Xs=0 at o. We can use the rule of thumb Rs=(1/3)|R1| to control the harmonics content at steady-state.

• Step 8 - Design the impedance transformation network for Zs and ZL.

• Step 9 - Built the circuit or run a computer simulation to verify that the circuit can indeed starts oscillating when power is connected.

• Note: Alternatively we may begin Step 4 using Source Stability Circle, select s in the unstable region so that R2 or G2 is negative at o .

37

Page 38: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Making an Amplifier Unstable (1)

• An amplifier can be made unstable by providing some kind of local positive feedback.

• Two favorite transistor amplifier configurations used for oscillator design are the Common-Base configuration with Base feedback and Common-Emitter configuration with Emitter degeneration.

38

Page 39: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Making an Amplifier Unstable (2)

39

Vout

Vin

L_StabCircleL_StabCircle1LSC=l_stab_circle(S,51)

LStabCircle

S_StabCircleS_StabCircle1SSC=s_stab_circle(S,51)

SStabCircle

StabFactStabFact1K=stab_fact(S)

StabFact

RReR=100 Ohm

S_ParamSP1

Step=2.0 MHzStop=410.0 MHzStart=410.0 MHz

S-PARAMETERS

DCDC1

DC

CCLBC=0.17 pF

CCbC=10.0 nF

LLB

R=L=22 nH

RRLBR=0.77 Ohm

CCc2C=10.0 nF

CCc1C=10.0 nF Term

Term1

Z=50 OhmNum=1

LLC

R=L=330.0 nH

LLE

R=L=330.0 nH

V_DCSRC1Vdc=4.5 V

TermTerm2

Z=50 OhmNum=2

RRb1R=10 kOhm

RRb2R=4.7 kOhm

pb_phl_BFR92A_19921214Q1

Positive feedbackhere

Common BaseConfiguration

Common BaseConfiguration

This is a practical modelof an inductor

An inductor is addedin series with the bypasscapacitor on the baseterminal of the BJT. This is a form of positiveseries feedback.

Base bypasscapacitor

At 410MHz

Page 40: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Making an Amplifier Unstable (3)

40

freq410.0MHz

K-0.987

freq410.0MHz

S(1,1)1.118 / 165.6...

S(1,2)0.162 / 166.9...

S(2,1)2.068 / -12.723

S(2,2)1.154 / -3.535

Unstable Regions

s22 and s11 have magnitude > 1

L Planes Plane

Page 41: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Making an Amplifier Unstable (4)

41

Vout

pb_phl_BFR92A_19921214Q1

CCe1C=15.0 pF

CCe2C=10.0 pF

RRb1R=10 kOhm

RRb2R=4.7 kOhm

TermTerm1

Z=50 OhmNum=1

CCc1C=1.0 nF

RReR=100 Ohm

CCc2C=1.0 nF

L_StabCircleL_StabCircle1LSC=l_stab_circle(S,51)

LStabCircle

S_StabCircleS_StabCircle1SSC=s_stab_circle(S,51)

SStabCircle

StabFactStabFact1K=stab_fact(S)

StabFact

S_ParamSP1

Step=2.0 MHzStop=410.0 MHzStart=410.0 MHz

S-PARAMETERS

DCDC1

DC

LLC

R=L=330.0 nH

V_DCSRC1Vdc=4.5 V

TermTerm2

Z=50 OhmNum=2

Positive feedback here

Common EmitterConfiguration

Common EmitterConfiguration

Feedback

Page 42: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Making an Amplifier Unstable (5)

42

freq410.0MHz

K-0.516

freq410.0MHz

S(1,1)3.067 / -47.641

S(1,2)0.251 / 62.636

S(2,1)6.149 / 176.803

S(2,2)1.157 / -21.427

UnstableRegions

S22 and S11 have magnitude > 1

L Plane s Plane

Page 43: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Precautions

• The requirement Rs= (1/3)|R1| is a rule of thumb to provide the excess gain to start up oscillation.

• Rs that is too large (near |R1| ) runs the risk of oscillator fails to start up due to component characteristic deviation.

• While Rs that is too small (smaller than (1/3)|R1|) causes too much non-linearity in the circuit, this will result in large harmonic distortion of the output waveform.

43

V2Clipping, a sign of too much nonlinearity

t

Rs too small

t

V2

Rs too large

For more discussion about the Rs = (1/3)|R1| rule,and on the sufficient condition for oscillation, see [6], which list further requirements.

For more discussion about the Rs = (1/3)|R1| rule,and on the sufficient condition for oscillation, see [6], which list further requirements.

Page 44: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Aid for Oscillator Design - Constant |1| Circle (1)

• In choosing a suitable L to make |L | > 1, we would like to know the range of L that would result in a specific |1 |.

• It turns out that if we fix |1 |, the range of load reflection coefficient that result in this value falls on a circle in the Smith chart for L .

• The radius and center of this circle can be derived from:

• Assuming = |1 |:

44

L

L

S

DS

22

111 1

222

2211

**22

2

centerTSD

SDS

222

222112RadiusSD

SS

By fixing |1 | and changing L .

(4.1a) (4.1b)

Page 45: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Aid for Oscillator Design - Constant |1| Circle (2)

• The Constant |1 | Circle is extremely useful in helping us to choose a suitable load reflection coefficient. Usually we would choose L that would result in |1 | = 1.5 or larger.

• Similarly Constant |2 | Circle can also be plotted for the source reflection coefficient. The expressions for center and radius is similar to the case for Constant |1 | Circle except we interchange s11 and s22, L and s . See Ref [1] and [2] for details of derivation.

45

Page 46: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 – CB Fixed Frequency Oscillator Design

• In this example, the design of a fixed frequency oscillator operating at 410MHz will be demonstrated using BFR92A transistor in SOT23 package. The transistor will be biased in Common-Base configuration.

• It is assumed that a 50 load will be connected to the output of the oscillator. The schematic of the basic amplifier circuit is as shown in the following slide.

• The design is performed using Agilent’s ADS software, but the author would like to stress that virtually any RF CAD package is suitable for this exercise.

46

Page 47: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

DCDC1

DC

S_ParamSP1

Step=2.0 MHzStop=410.0 MHzStart=410.0 MHz

S-PARAMETERS

StabFactStabFact1K=stab_fact(S)

StabFact

LLC

R=L=330.0 nH

LLE

R=L=220.0 nH

LLB

R=L=12.0 nH

S_StabCircleS_StabCircle1source_stabcir=s_stab_circle(S,51)

SStabCircle

L_StabCircleL_StabCircle1load_stabcir=l_stab_circle(S,51)

LStabCircle

TermTerm1

Z=50 OhmNum=1

CCc1C=1.0 nF

TermTerm2

Z=50 OhmNum=2

CCc2C=1.0 nF

RReR=100 Ohm

CCbC=1.0 nF

V_DCSRC1Vdc=4.5 V R

Rb1R=10 kOhm

RRb2R=4.7 kOhm

pb_phl_BFR92A_19921214Q1

Example 4.1 Cont...

• Step 1 and 2 - DC biasing circuit design and S-parameter extraction.

47

Port 1 - Input

Port 2 - Output

AmplifierPort 1 Port 2

LB is chosen care-fully so that theunstable regionsin both L and s

planes are largeenough.

Page 48: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

48

freq410.0MHz

K-0.987

freq410.0MHz

S(1,1)1.118 / 165.6...

S(1,2)0.162 / 166.9...

S(2,1)2.068 / -12.723

S(2,2)1.154 / -3.535

Unstable Regions

Load impedance here will resultin |1| > 1

Source impedance here will resultin |2| > 1

Page 49: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• Step 3 and 4 - Choosing suitable L that cause |1 | > 1 at 410MHz. We plot a few constant |1 | circles on the L plane to assist us in choosing a suitable load reflection coefficient.

49

LSC

|1 |=1.5

|1 |=2.0

|1 |=2.5

L = 0.5<0

This point is chosenbecause it is onreal line and easilymatched.

L Plane

Note: More difficult to implement loadimpedance nearedges of Smith Chart

ZL = 150+j0

Page 50: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• Step 5 – To check whether the input of the destabilized amplifier is closer to series or parallel form. We perform large-signal analysis and observe the S11 at the input of the destabilized amplifier.

50

LSSPHB1

Step=0.2Stop=-5Start=-20SweepVar="Poutv"LSSP_FreqAtPort[1]=Order[1]=5Freq[1]=410.0 MHz

LSSP

RRLR=150 Ohm

VARVAR1Poutv=-10.0

EqnVar

P_1TonePORT1

Freq=410 MHzP=polar(dbmtow(Poutv),0)Z=50 OhmNum=1

CCc2C=1.0 nF

CCc1C=1.0 nF

LLB

R=L=12.0 nH

CCBC=1.0 nF

V_DCSRC1Vdc=4.5 V

RRER=100 Ohm

LLE

R=L=220.0 nH

RRB2R=4.7 kOhm

RRB1R=10 kOhm

LLC

R=L=330.0 nH

pb_phl_BFR92A_19921214Q1

We are measuringlarge-signal S11 lookingtowards here

Extra

Large-signal S-parameterAnalysis controlin ADS software.

Page 51: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• Compare the locus of S11 and the constant X and constant B circles on the Smith Chart, it is clear the locus is more parallel to the constant X circle. Also the direction of S11 is moving from negative R to positive R as input power level is increased. We conclude the Series form is more appropriate.

51

Region where R1 or G1 is negative

Poutv (-20.000 to -5.000)

S(1

,1)

Direction of S11 as magnitudeof P_1tone source is increased

Compare

Locus of S11 versus P_1tone power at 410MHz(from -20 to -5 dBm)

Boundary ofNormal Smith Chart

Region where R1 or G1 is positive

Extra

Page 52: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• Step 6 – Using the series form, we find the small-signal input impedance Z 1 at 410MHz. So the resonator would also be a series network.

• For ZL = 150 or L = 0.5<0:

• Step 7 - Finding the suitable source impedance to fulfill R 1 + Rs<0, X1 + Xs=0:

52

851.7257.101

1

479.0422.11

1

11

22

111

jZZ

jS

DS

o

L

L

851.7

42.33

1

1

1

XX

RR

s

s

R1

X1

Page 53: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• The system block diagram:

53

Common-Base (CB) Amplifier

with feedback

Port 1 Port 2Zs = 3.42-j7.851

ZL = 150

Page 54: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont...

• Step 5 - Realization of the source and load impedance at 410MHz.

54

pFC

C

44.49851.7

1

1851.7

CB Amplifier3.42

27.27nH49.44pF

50

Zs= 3.42-j7.851 ZL=150

@ 410MHz3.49pF

Impedance transformation network

Page 55: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

mW

R

VP

LL

025.250

45.05.0

2

1

2

2

Example 4.1 Cont... - Verification Thru Simulation

55

Vpp = 0.9VV = 0.45V

Power dissipated in the load:

BFR92A

Vpp

Page 56: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.1 Cont... - Verification Thru Simulation

• Performing Fourier Analysis on the steady state wave form:

56

484 MHz

The waveform is very clean withlittle harmonic distortion. Althoughwe may have to tune the capacitorCs to obtain oscillation at 410 MHz.

The waveform is very clean withlittle harmonic distortion. Althoughwe may have to tune the capacitorCs to obtain oscillation at 410 MHz.

Page 57: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

0 10 20 30 40 50 60 70 80 90 100 110 120

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

time, nsec

Vbb, V

Vout, V

Example 4.1 Cont... – The Prototype

57

Voltage at the base terminal and 50 Ohms load resistor of thefixed frequency oscillator:

Output portVout

Vbb

V

nsStartup transient

Page 58: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.2 – 450 MHz CE Fixed Frequency Oscillator Design

• Small-signal AC or S-parameter analysis, to show that R1 or G1 is negative at the intended oscillation frequency of 450 MHz.

58

S_ParamSP1

Step=10.0 MHzStop=800.0 MHzStart=100.0 MHz

S-PARAMETERS

TermTerm1

Z=50 OhmNum=1

CC2C=4.7 pF

RRLR=150 Ohm

CCc2C=330.0 pF

V_DCSRC1Vdc=3.0 V

LLC

R=L=220.0 nH

RRER=220 Ohm

RRBR=47 kOhm

DC_BlockDC_Block1 C

C1C=2.2 pF

pb_phl_BFR92A_19921214Q1

200 300 400 500 600 700100 800

-500

-400

-300

-200

-100

-600

0

-1500

-1000

-500

-2000

0

freq, MHz

real

(Z(1

,1))

imag(Z

(1,1))

200 300 400 500 600 700100 800

-0.010

-0.005

-0.015

0.000

0.005

0.010

0.015

0.000

0.020

freq, MHz

real

(Y(1

,1))

imag(Y

(1,1))

Selection of loadresistor as in Example 4.1.

There are simplified expressions to find C1 and C2, see reference [5].Here we just trial and error to get some reasonable values.

Destabilized amplifier

Page 59: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.2 Cont…

• The large-signal analysis to check for suitable representation.

59

Poutv (-5.000 to 15.000)

S(1

,1)

LSSPHB1

Step=0.2Stop=15Start=-5SweepVar="Poutv"LSSP_FreqAtPort[1]=Order[1]=7Freq[1]=450.0 MHz

LSSP

CC2C=4.7 pF

P_1TonePORT1

Freq=450 MHzP=polar(dbmtow(Poutv),0)Z=50 OhmNum=1

RRLR=150 Ohm

CCc2C=330.0 pF

V_DCSRC1Vdc=3.0 V

LLC

R=L=220.0 nH

RRER=220 Ohm

RRBR=47 kOhm

DC_BlockDC_Block1 C

C1C=2.2 pF

VARVAR1Poutv=-10.0

EqnVar

pb_phl_BFR92A_19921214Q1

Direction of S11 as magnitudeof P_1tone source is increasedfrom -5 to +15 dBm

Compare

Since the locus of S11 is close in shape toconstant X circles, and it indicates R1 goes fromnegative value to positive values as input power is increased, we use series form torepresent the input network looking towardsthe Base of the amplifier.

Since the locus of S11 is close in shape toconstant X circles, and it indicates R1 goes fromnegative value to positive values as input power is increased, we use series form torepresent the input network looking towardsthe Base of the amplifier.

Boundary ofNormal Smith Chart

Extra

S11

Page 60: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.2 Cont…

• Using a series RL for the resonator, and performing time-domain simulation to verify that the circuit will oscillate.

600.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.50.0 5.0

0.2

0.4

0.6

0.0

0.8

freq, GHz

mag

(VfL

)

Readout

m1

m1freq=mag(VfL)=0.733

450.0MHz

VLVC

VB

LL1

R=10L=39.0 nH

VtPWLSRC2V_Tran=pwl(time, 0ns,0V, 2ns,0.1V, 4ns,0V)

t

TranTran1

MaxTimeStep=1.0 nsecStopTime=100.0 nsec

TRANSIENT

CCc1C=1.0 nF

CC2C=4.7 pF

RRLR=150 Ohm

CCc2C=330.0 pF

V_DCSRC1Vdc=3.0 V

LLC

R=L=220.0 nH

RRER=220 Ohm

RRBR=47 kOhm

CC1C=2.2 pF

pb_phl_BFR92A_19921214Q1

20 40 60 800 100

-1.0

-0.5

0.0

0.5

-1.5

1.0

time, nsec

VL,

V

Eqn VfL=fs(VL)

vL(t)

|VL(f)|Large couplingcapacitor

Page 61: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 4.3 – Parallel Representation

• An example where the network looking into the Base of the destabilized amplifier is more appropriate as parallel RC network.

61

Poutv (-7.000 to 12.000)

S(1

,1)

V_DCVCCVdc=3.3 V

RRER=100 Ohm

LLC

R=0.2L=2 nH

RRB1R=1000 Ohm

RRLR=50 Ohm

VARVAR5

fo=2300Poutv=1.0

EqnVar

LSSPHB1

Step=0.2Stop=12Start=-7SweepVar="Poutv"LSSP_FreqAtPort[1]=fo MHzOrder[1]=8Freq[1]=fo MHz

LSSP

CCdec1C=100.0 pF

P_1TonePORT1

Freq=fo MHzP=polar(dbmtow(Poutv),0)Z=50 OhmNum=1

CCc1C=1.2 pF

CCc2C=1.0 pF

CC2C=0.7 pF t

CC1C=0.6 pF t

RRB2R=1000 Ohm

pb_phl_BFR92A_19921214Q1

S11

Compare

Direction of S11 as magnitudeof P_1tone source is increasedfrom -7 to +12 dBm

S11 versusInput power

Page 62: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Frequency Stability

• The process of oscillation depends on the non-linear behavior of the negative-resistance network.

• The conditions discussed, e.g. equations (3.1), (3.8), (3.9), (3.10) and (3.11) are not enough to guarantee a stable state of oscillation. In particular, stability requires that any perturbation in current, voltage and frequency will be damped out, allowing the oscillator to return to it’s initial state.

• The stability of oscillation can be expressed in terms of the partial derivative of the sum Zin + Zs or Yin + Ys of the input port (or output port).

• The discussion is beyond the scope of this chapter for now, and the reader should refer to [1] and [7] for the concepts.

62

Page 63: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Some Steps to Improve Oscillator Performance

• To improve the frequency stability of the oscillator, the following steps can be taken.

• Use components with known temperature coefficients, especially capacitors.

• Neutralize, or swamp-out with resistors, the effects of active device variations due to temperature, power supply and circuit load changes.

• Operate the oscillator on lower power.• Reduce noise, use shielding, AGC (automatic gain control) and bias-

line filtering.• Use an oven or temperature compensating circuitry (such as

thermistor).• Use differential oscillator architecture (see [4] and [7]).

63

Page 64: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Extra References for This Section

• Some recommended journal papers on frequency stability of oscillator:• Kurokawa K., “Some basic characteristics of broadband negative

resistance oscillator circuits”, Bell System Technical Journal, pp. 1937-1955, 1969.

• Nguyen N.M., Meyer R.G., “Start-up and frequency stability in high-frequency oscillators”,IEEE journal of Solid-State Circuits, vol 27, no. 5 pp.810-819, 1992.

• Grebennikov A. V., “Stability of negative resistance oscillator circuits”, International journal of Electronic Engineering Education, Vol. 36, pp. 242-254, 1999.

64

Page 65: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Reconciliation Between Feedback and Negative Resistance Oscillator

Perspectives• It must be emphasized that the circuit we obtained using negative

resistance approach can be cast into the familiar feedback form. For instance an oscillator circuit similar to Example 4.2 can be redrawn as:

65

VL

CCc1C=4.7 pF

RRLR=50 Ohm

CCc2C=1.0 pF

LL1

R=0.1L=15.0 nH t

RRB1R=10000 Ohm t

LLC

R=0.2L=2.2 nH t

CC1C=1.0 pF t

CC2C=0.8 pF t

RRER=100 Ohm t

pb_phl_BFR92A_19921214Q1

V_DCVCCVdc=3.0 V

VL

RRLR=50 Ohm

RRER=100 Ohm t

pb_phl_BFR92A_19921214Q1

CC2C=0.8 pF t

CC1C=1.0 pF t

LL1

R=0.1L=15.0 nH t

CCc1C=4.7 pF

CCc2C=1.0 pF

RRB1R=10000 Ohm t

LLC

R=0.2L=2.2 nH t

V_DCVCCVdc=3.0 V

Amplifier

Feedback Network

Extra

Negative ResistanceOscillator

Page 66: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

5.0 Voltage Controlled Oscillator

66

Page 67: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

About the Voltage Controlled Oscillator (VCO) (1)

• A simple transistor VCO using Clapp-Gouriet or CE configuration will be designed to illustrate the principles of VCO.

• The transistor chosen for the job is BFR92A, a wide-band NPN transistor which comes in SOT-23 package.

• Similar concepts as in the design of fixed-frequency oscillators are employed. Where we design the biasing of the transistor, destabilize the network and carefully choose a load so that from the input port (Port 1), the oscillator circuit has an impedance (assuming series representation is valid):

• Of which R1 is negative, for a range of frequencies from 1 to 2.

67

111 jXRZ

Lower Upper

Page 68: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

About the Voltage Controlled Oscillator (VCO) (2)

68

Clapp-GourietOscillator Circuitwith Load

Zs

Z1 = R1 + jX1

ZL

Page 69: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

About the Voltage Controlled Oscillator (VCO) (3)

• If we can connect a source impedance Zs to the input port, such that within a range of frequencies from 1 to 2:

• The circuit will oscillate within this range of frequencies. By changing the value of Xs, one can change the oscillation frequency.

• For example, if X1 is positive, then Xs must be negative, and it can be generated by a series capacitor. By changing the capacitance, one can change the oscillation frequency of the circuit.

• If X1 is negative, Xs must be positive. A variable capacitor in series with a suitable inductor will allow us to adjust the value of Xs.

69

sss jXRZ

0 11 RRRs 1 XX s

The rationale is that only the initial spectral of the noise signal fulfilling Xs = X1 will start the oscillation.

The rationale is that only the initial spectral of the noise signal fulfilling Xs = X1 will start the oscillation.

Page 70: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Schematic of the VCO

70

RRLR=Rload

ParamSweepSweep1

Step=100Stop=700Start=100SimInstanceName[6]=SimInstanceName[5]=SimInstanceName[4]=SimInstanceName[3]=SimInstanceName[2]=SimInstanceName[1]="Tran1"SweepVar="Rload"

PARAMETER SWEEP

VARVAR1

Rload=100X=1.0

EqnVar

TranTran1

MaxTimeStep=1.2 nsecStopTime=100.0 nsec

TRANSIENT

DCDC1

DC

CCb4C=4.7 pF

V_DCSRC1Vdc=-1.5 V

CCb3C=4.7 pF

di_sms_bas40_19930908D1

LL2

R=L=47.0 nH

CCb2C=10.0 pF

RR1R=4700 Ohm

CCb1C=2.2 pF

RRbR=47 kOhm

pb_phl_BFR92A_19921214Q1

RReR=220 Ohm

LLc

R=L=220.0 nH

RRoutR=50 Ohm

CCc2C=330.0 pF

V_DCVccVdc=3.0 V

VtPWLVtrigV_Tran=pwl(time, 0ns,0V, 1ns,0.01V, 2ns,0V)t

2-port network

Variablecapacitancetuning network

Initial noise source to startthe oscillation

Page 71: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

More on the Schematic

• L2 together with Cb3, Cb4 and the junction capacitance of D1 can produce a range of reactance value, from negative to positive. Together these components form the frequency determining network.

• Cb4 is optional, it is used to introduce a capacitive offset to the junction capacitance of D1.

• R1 is used to isolate the control voltage Vdc from the frequency determining network. It must be a high quality SMD resistor. The effectiveness of isolation can be improved by adding a RF choke in series with R1 and a shunt capacitor at the control voltage.

• Notice that the frequency determining network has no actual resistance to counter the effect of |R1()|. This is provided by the loss resistance of L2 and the junction resistance of D1.

71

Page 72: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Time Domain Result

72

0 10 20 30 40 50 60 70 80 90 100

-1.5

-1.0

-0.5

0.0

0.5

1.0

time, nsec

Vout

[Inde

x,::]

Vout when Vdc = -1.5V

Page 73: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Load-Pull Experiment

• Peak-to-peak output voltage versus Rload for Vdc = -1.5V.

73

100 200 300 400 500 600 700 800

1

2

3

4

5

Rload

VppVout(pp)

RLoad

Page 74: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Controlling Harmonic Distortion (1)

• Since the resistance in the frequency determining network is too small, large amount of non-linearity is needed to limit the output voltage waveform, as shown below there is a lot of distortion.

74

Vout

Page 75: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Controlling Harmonic Distortion (2)

• The distortion generates substantial amount of higher harmonics.• This can be reduced by decreasing the positive feedback, by adding a

small capacitance across the collector and base of transistor Q1. This is shown in the next slide.

75

Page 76: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Controlling Harmonic Distortion (3)

76

Capacitor to control positive feedback

CCcbC=1.0 pF

RRLR=50 Ohm

RRoutR=50 Ohm

RReR=220 Ohm

LLc

R=L=220.0 nH

I_ProbeIC

pb_phl_BFR92A_19921214Q1

TranTran1

MaxTimeStep=1.2 nsecStopTime=280.0 nsec

TRANSIENT

DCDC1

DC

I_ProbeIload C

Cc2C=330.0 pF

LL2

R=L=47.0 nH

RRbR=47 kOhm

CCb1C=6.8 pF

CCb2C=10.0 pF

V_DCSRC1Vdc=0.5 V

CCb4C=0.7 pF

CCb3C=4.7 pF

di_sms_bas40_19930908D1

RR1R=4700 Ohm

V_DCVccVdc=3.0 V

VtPWLVtrigV_Tran=pwl(time, 0ns,0V, 1ns,0.01V, 2ns,0V)

t

The observantperson wouldprobably noticethat we can alsoreduce the harmonicdistortion by introducinga series resistance inthe tuning network.However this is notadvisable as the phasenoise at the oscillator’soutput will increase (more about this later).

The observantperson wouldprobably noticethat we can alsoreduce the harmonicdistortion by introducinga series resistance inthe tuning network.However this is notadvisable as the phasenoise at the oscillator’soutput will increase (more about this later).

Control voltageVcontrol

Page 77: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Controlling Harmonic Distortion (4)

• The output waveform Vout after this modification is shown below:

77

Vout

Page 78: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Controlling Harmonic Distortion (5)

• Finally, it should be noted that we should also add a low-pass filter (LPF) at the output of the oscillator to suppress the higher harmonic components. Such LPF is usually called Harmonic Filter.

• Since the oscillator is operating in nonlinear mode, care must be taken in designing the LPF.

• Another practical design example will illustrate this approach.

78

Page 79: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

The Tuning Range

• Actual measurement is carried out, with the frequency measured using a high bandwidth digital storage oscilloscope.

79

0 0.5 1 1.5 2 2.5395

400

405

410

f

Vdc

MHz

Volts

D1 is BB149A,a varactormanufactured byPhillipsSemiconductor (Now NXP).

D1 is BB149A,a varactormanufactured byPhillipsSemiconductor (Now NXP).

Page 80: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Phase Noise in Oscillator (1)

• Since the oscillator output is periodic. In frequency domain we would expect a series of harmonics.

• In a practical oscillation system, the instantaneous frequency and magnitude of oscillation are not constant. These will fluctuate as a function of time.

• These random fluctuations are noise, and in frequency domain the effect of the spectra will ‘smear out’.

80

tttmVtv noisenoiseoosc cos

ffo 2fo 3foIdeal oscillator output

ffo 2fo 3fo

t

t

Real oscillator output

Smearing

Extra

Page 81: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Phase Noise in Oscillator (2)

• Mathematically, we can say that the instantaneous frequency and magnitude of oscillation are not constant. These will fluctuate as a function of time.

• As a result, the output in the frequency domain is ‘smeared’ out.

81

t

v(t)

t

v(t)

ffo

ffo

Extra

T = 1/fo

Contains both phaseand amplitude modulationof the sinusoidal waveformat frequency fo

2

81log10

offset

o

L ff

QAFkT

PML Leeson’s expression

Large phase noise

Small phase noise

Page 82: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Phase Noise in Oscillator (3)

• Typically the magnitude fluctuation is small (or can be minimized) due to the oscillator nonlinear limiting process under steady-state.

• Thus the smearing is largely attributed to phase variation and is known as Phase Noise. • Phase noise is measured with respect to the signal level at various offset frequencies.

82

Extra

• Phase noise is measured in dBc/Hz @ foffset. • dBc/Hz stands for dB downfrom the carrier (the ‘c’) in 1 Hz bandwidth.• For example -90dBc/Hz @ 100kHz offset from a CW sine wave at 2.4GHz.

- 90dBc/Hz

100kHz

ffo

t

v(t)

Signal level

Assume amplitude limiting effectOf the oscillator reduces amplitude fluctuation

ttVtv noiseoosc cos

Page 83: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Reducing Phase Noise (1)

• Requirement 1: The resonator network of an oscillator must have a high Q factor. This is an indication of low dissipation loss in the tuning network (See Chapter 3a – impedance transformation network on Q factor).

83

X1

Xtune

-X1

ff

2|X1|

TuningNetwork withHigh Q

X1

Xtune

-X1

f

f

2|X1|

TuningNetwork withLow Q

Ztune = Rtune +jXtune

Extra

Variation in Xtune due to environmentcauses small changein instantaneousfrequency.

Variation in Xtune due to environmentcauses small changein instantaneousfrequency.

Page 84: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Reducing Phase Noise (2)

• A Q factor in the tuning network of at least 20 is needed for medium performance oscillator circuits at UHF. For highly stable oscillator, Q factor of the tuning network must be in excess or 1000.

• We have looked at LC tuning networks, which can give Q factor of up to 40. Ceramic resonator can provide Q factor greater than 500, while piezoelectric crystal can provide Q factor > 10000.

• At microwave frequency, the LC tuning networks can be substituted with transmission line sections.

• See R. W. Rhea, “Oscillator design & computer simulation”, 2nd edition 1995, McGraw-Hill, or the book by R.E. Collin for more discussions on Q factor.

• Requirement 2: The power supply to the oscillator circuit should also be very stable to prevent unwanted amplitude modulation at the oscillator’s output.

84

Extra

Page 85: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Reducing Phase Noise (3)

• Requirement 3: The voltage level of Vcontrol should be stable.

• Requirement 4: The circuit has to be properly shielded from electromagnetic interference from other modules.

• Requirement 5: Use low noise components in the construction of the oscillator, e.g. small resistance values, low-loss capacitors and inductors, low-loss PCB dielectric, use discrete components instead of integrated circuits.

85

Extra

Page 86: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example of Phase Noise from VCOs

• Comparison of two VCO outputs on a spectrum analyzer*.

86

Extra

*The spectrumanalyzer internaloscillator mustof course hasa phase noise ofan order of magnitudelower than our VCOunder test.

VCO output with high phase noise VCO output

with low phase noise

Page 87: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

More Materials

• This short discussion cannot do justice to the material on phase noise. • For instance the mathematical model of phase noise in oscillator and

the famous Leeson’s equation is not shown here. You can find further discussion in [4], and some material for further readings on this topic:– D. Schere, “The art of phase noise measurement”, Hewlett Packard

RF & Microwave Measurement Symposium, 1985.– T. Lee, A. Hajimiri, “The design of low noise oscillators”, Kluwer,

1999.

87

Extra

Page 88: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

More on Varactor

• The varactor diode is basically a PN junction optimized for its linear junction capacitance.

• It is always operated in the reverse-biased mode to prevent nonlinearity, which generate harmonics.

88

• As we increase the negativebiasing voltage Vj , Cj decreases, hence the oscillation frequency increases.• The abrupt junction varactor has highQ, but low sensitivity (e.g. Cj varieslittle over large voltage change).• The hyperabrupt junction varactor has low Q, but higher sensitivity.

• As we increase the negativebiasing voltage Vj , Cj decreases, hence the oscillation frequency increases.• The abrupt junction varactor has highQ, but low sensitivity (e.g. Cj varieslittle over large voltage change).• The hyperabrupt junction varactor has low Q, but higher sensitivity.

Extra

Vj

Vj0

Cj

Linear region

Reverse biased

Forward biasedCjo

Page 89: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

A Better Variable Capacitor Network

• The back-to-back varactors are commonly employed in a VCO circuit, so that at low Vcontrol, when one of the diode is being affected by the AC voltage, the other is still being reverse biased.

• When a diode is forward biased, the PN junction capacitance becomes nonlinear.

• The reverse biased diode has smaller junction capacitance, and this dominates the overall capacitance of the back-to-back varactor network.

• This configuration helps to decrease the harmonic distortion.

89

At any one time, at least one ofthe diode will be reverse biased.The junction capacitance of thereverse biased diode will dominatethe overall capacitance of thenetwork.

At any one time, at least one ofthe diode will be reverse biased.The junction capacitance of thereverse biased diode will dominatethe overall capacitance of thenetwork.

Extra

Vcontrol

Symbolfor Varactor

To suppressRF signals

To negativeresistanceamplifier

Vcontrol

Vcontrol

Page 90: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 – VCO Design for Frequency Synthesizer

• To design a low power VCO that works from 810 MHz to 910 MHz.• Power supply = 3.0V.• Output power (into 50Ω load) minimum -3.0 dBm.

90

Page 91: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• Checking the d.c. biasing and AC simulation.

91

S_ParamSP1

Step=1.0 MHzStop=1.0 GHzStart=0.7 GHz

S-PARAMETERS

DCDC1

DC

b82496c3120j000LCparam=SIMID 0603-C (12 nH +-5%)

4_7pF_NPO_0603Cc1

100pF_NPO_0603Cc2

2_2pF_NPO_0603C1

RRER=100 Ohm

3_3pF_NPO_0603C2

RRLR=100 Ohm

TermTerm1

Z=50 OhmNum=1

V_DCSRC1Vdc=3.3 V

RRBR=33 kOhm

pb_phl_BFR92A_19921214Q1

Z11

Page 92: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• Checking the results – real and imaginary portion of Z1 when output is terminated with ZL = 100Ω.

92

m2freq=m2=-84.412

809.0MHzm1freq=m1=-89.579

775.0MHz

0.72 0.74 0.76 0.78 0.80 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.980.70 1.00

-110

-100

-90

-80

-70

-60

-50

-120

-40

freq, GHz

real

(Z(1

,1))

Readout

m2

imag

(Z(1

,1))

Readout

m1

Page 93: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• The resonator design.

93

Vvar

VARVAR1Vcontrol=0.2

EqnVar

CC3C=0.68 pF

LL1

R=L=10.0 nH

ParamSweepSweep1

Step=0.5Stop=3Start=0.0SimInstanceName[6]=SimInstanceName[5]=SimInstanceName[4]=SimInstanceName[3]=SimInstanceName[2]=SimInstanceName[1]="SP1"SweepVar="Vcontrol"

PARAMETER SWEEP

LL2

R=L=33.0 nH

100pF_NPO_0603C2

V_DCSRC1Vdc=Vcontrol V

S_ParamSP1

Step=1.0 MHzStop=1.0 GHzStart=0.7 GHz

S-PARAMETERS

BB833_SOD323D1

TermTerm1

Z=50 OhmNum=1

Page 94: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• The resonator reactance.

94

m1freq=m1=64.725Vcontrol=0.000000

882.0MHz

0.75 0.80 0.85 0.90 0.950.70 1.00

20

40

60

80

100

0

120

freq, GHz

imag

(Z(1

,1))

Readout

m1

-imag

(VC

O_a

c..Z

(1,1

))

Resonatorreactanceas a function ofcontrol voltage

The theoretical tuningrange

-X1 of the destabilized amplifier

Page 95: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• The complete schematic with the harmonic suppression filter.

95

Vvar

b82496c3120j000L3param=SIMID 0603-C (12 nH +-5%)

b82496c3100j000L1param=SIMID 0603-C (10 nH +-5%)

b82496c3330j000L2param=SIMID 0603-C (33 nH +-5%)

RR1R=100 Ohm

100pF_NPO_0603C4

b82496c3150j000L4param=SIMID 0603-C (15 nH +-5%)

0_47pF_NPO_0603C9

RRLR=100 Ohm2_7pF_NPO_0603

C8

100pF_NPO_0603Cc2

pb_phl_BFR92A_19921214Q1

TranTran1

MaxTimeStep=1.0 nsecStopTime=1000.0 nsec

TRANSIENT

DCDC1

DC

CC7C=3.3 pF

CC6C=2.2 pF

V_DCSRC2Vdc=1.2 V

CC5C=0.68 pF

BB833_SOD323D1

VtPWLSrc_triggerV_Tran=pwl(time, 0ns,0V, 1ns,0.1V, 2ns,0V)

t

4_7pF_NPO_0603Cc1

RRER=100 Ohm

V_DCSRC1Vdc=3.3 V

RRBR=33 kOhm

Low-pass filter

Page 96: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• The prototype and the result captured from a spectrum analyzer (9 kHz to 3 GHz).

96

VCOHarmonicsuppression filterFundamental

-1.5 dBm- 30 dBm

Page 97: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• Examining the phase noise of the oscillator (of course the accuracy is limited by the stability of the spectrum analyzer used).

97

Span = 500 kHzRBW = 300 HzVBW = 300 Hz

-0.42 dBm

Page 98: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• VCO gain (ko) measurement setup:

98

Spectrum Analyzer

Spectrum Analyzer

Vvar

PortVoutNum=2

PortVcontrolNum=1

RRcontrolR=1000 Ohm

RRattnR=50 Ohm

b82496c3120j000L3param=SIMID 0603-C (12 nH +-5%)

b82496c3100j000L1param=SIMID 0603-C (10 nH +-5%)

b82496c3150j000L4param=SIMID 0603-C (15 nH +-5%)

0_47pF_NPO_0603C9

2_7pF_NPO_0603C8

100pF_NPO_0603Cc2

pb_phl_BFR92A_19921214Q1

CC7C=3.3 pF

CC6C=2.2 pFC

C5C=0.68 pF

BB833_SOD323D1

4_7pF_NPO_0603Cc1

RRER=100 Ohm

V_DCSRC1Vdc=3.3 V

RRBR=33 kOhmVariable

power supply

Variablepower supply

Page 99: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

Example 5.1 Cont…

• Measured results:

April 2012 2006 by Fabian Kung Wai Lee 990.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

750

800

850

900

950

fVCO / MHz

Vcontrol/Volts

MHz/Volt 74.40Volt 35.1

MHz 55 ok MHz/Volt 74.40Volt 35.1

MHz 55 ok

Page 100: 1 ME1000 RF CIRCUIT DESIGN  This courseware product contains scholarly and technical information and is protected by copyright

References

[1]* D.M. Pozar, “Microwave Engineering”, 2nd Edition, 1998 John-Wiley & Sons

[2] R. Ludwig, P. Bretchko, “RF Circuit Design: Theory and Applications”, 2000 Prentice-Hall

[3] B. Razavi, “RF Microelectronics”, 1998 Prentice-Hall, TK6560

[4] J. R. Smith, “Modern Communication Circuits”,1998 McGraw-Hill

[5] P. H. Young, “Electronics Communication Techniques”, 5th edition, 2004 Prentice-Hall

[6] Gilmore R., Besser L., “Practical RF Circuit Design for Modern Wireless Systems”, Vol. 1 & 2, 2003, Artech House