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7/27/2019 08 450 Pavelka Semilab
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Sem iconductorPhysicsLaboratoryCo.Ltd. 1
Semilab Technologies forSemilab Technologies for450mm Wafer Metrology450mm Wafer Metrology
Tibor Pavelka
Semilab Semiconductor PhysicsLaboratory Co. Ltd.
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OutlineOutline
Short introduction to Semilab
Technologies with potentialfor 450mm
Non-destructive, capable of in-
line process control
Contamination monitoring
Epi layer monitoring
Implant monitoring
Dielectric characterization
Metal layer characterization
Characterization of etchedstructures
Destructive / analytical tools
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Short IntroductionShort Introduction Semilab FactsSemilab Facts
Main activity: Development, manufacturing andmarketing of metrology equipment for thesemiconductor and photovoltaic industries.
Revenue exceeds $ 50 million (2008)
Employees: 258
worldwide, 152
in Hungary
Laboratory, office and manufacturing space: 11,000m2,
about 3,000 m2
in the US
76 physicists employed (43 in Hungary) 25 employees
holding a
Ph. D.
in physics
(5
in
Hungary)
Installed
base: more than 2,300 units
Patents: wholly owned
90, applications
8,
lincensed
41
Listed as 35th
among the 50 fastest growing Central-
East European
technology companies (Deloitte) in
2008
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History of SemilabHistory of Semilab
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History of the Semilab GroupHistory of the Semilab Group
1990
2004
2008
2008
2008
2009
2009
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Semilab around the WorldSemilab around the World
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Semilab PeopleSemilab People
Hungary59%
UK
Germany1%
SingaporeChina
6%
Japan5%
France6%
USA23%
PhD10%
PhDstudents
3%
University/College
without PhD59%
Other28%
Administrative
11%
Engineers
35%Physicists29%
Manufacturing
& Assembly
24%
Others
1%
Semilab Worldwide Qualifications
Tasks
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Semilab in European CooperationsSemilab in European Cooperations
Successful participation in theSEA-NET project
MetalMap: lifetime monitoring andmetal contamination measurementon bare wafers
Lead It: contactless sheet
resistance measurement viajunction photo-voltage technique
Member of the EEMI450
Participant in other projects underdevelopment or evaluation
Becoming an active player inEuropean cooperation
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Contamination Monitoring I.Contamination Monitoring I. Lifetime Measurement (Lifetime Measurement (--PCD)PCD)
Minority chargecarrier lifetime:effective parameter
to characterize thepurity ofsemiconductormaterial
-PCD method:
simple, robust,powerful techniquefor lifetimemonitoring
Available in WT
wafer testers (frombench-top platformto fully automated300mm tool)
Possible applicationin 450mm lines
bulkThermal
equilibrium
Excitation
(generationof excess
chargecarriers)
Redistribution
of carriers
diffusion ofcarriers
to thesurface
surface
recombination
bulk
recombination
surfacediff
surfdiffbulkmeas
111
++=
S2
d
D
d
pn,
2
2
=
=
surf
diff
D: diffusion constantof minority carriersd: wafer thicknessS: Surface
recombination velocity
meas
: measured lifetimesurface
: surface recombination lifetimediff
: characteristic time for diffusion to thesurface from the bulk
bulk
: bulk recombination lifetime
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Contamination Monitoring II.Contamination Monitoring II. SPVSPVDiffusion Length MeasurementDiffusion Length Measurement
Diffusion length: key parameter forsemiconductor characterization,especially for metal contaminationmonitoring
Fast, non-contact, non-destructivewhole wafer mapping
Measurement principle:
Excess charge carrier pairs aregenerated by laser pulse surfacephotovoltage appears
VSPV
~n, VSPV
: measured surfacephotovoltage, n: number of excesscharge carriers
Measurement with different lasers
The following equation is fulfilled:
: photon flux density
L: diffusion lengtjh
1/: penetration depth
1/ [m]1/(1) 1/(2)L [m]
VSPV
( )( )
1
1V
SPV
( )
( )
2
2V
SPV
SPV Plot
Integrated SPV Measuring Unit
ComputerSPVelectronics
Lock-indetection
Lasers
Capacitive sensor
Silicon wafer
Periodicexcitation
+=
1
LCVSPV
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Epi Layer Monitoring I.Epi Layer Monitoring I. Dopant andDopant andResistivity Profiling by Airgap CVResistivity Profiling by Airgap CV
EPIMET
real-time,
non-contact, non-
destructiveproduction linecontrol for epiprocesses
No need for monitor
wafers
Pre-treatment isintegrated
Resistivity and dopantprofile plotting
Wafer mapping
Excellent repeatability(
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Epi Layer Monitoring II.Epi Layer Monitoring II. SurfaceSurfaceCharge ProfilingCharge Profiling
Measurement of n/p,n/n, p/p, p/n epi even
over buried layers
Measures
Dopingconcentration
Resistivity Depletion layer width
Surfacerecombinationlifetime
Conductivity type
Based on highfrequency AC surfacephoto-voltage
Illumination
~~~~
Wd
VsW
d
h
e
h
Re
Rh
Dark
Bulk
p-type
h
High frequency surface photo-voltage
Low intensity:
Vs
< 0.05 kT/q
Wavelength < 400 nm
Vs
~Wd
~1/Csc
Wd-inv = (Nsc)
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Epi Layer Monitoring III.Epi Layer Monitoring III. FastFastGateGate
Non-penetratingElastic Metal probe
for rapidmonitoring of epilayers
EM-probe: non-
destructive probefor capacitancemeasurements andIV-profiling
Small tip diameter
to enable sheetresistance profiling
CV profiling
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Implant Monitoring I.Implant Monitoring I. CarrierCarrierIlluminationIllumination
In-line, non-contact,pre-anneal monitoringof
Implant Dose
PAI depth
Junction depth
BX-3000 Carrier
IlluminationTechnology
Generation lasercreates excesscarriers
Excess carriersgradient forms indexof refraction gradient
Probe laser reads outindex of refraction to
determine junctionproperties
Objective
lens
Generation
laser
(830 nm red)
Probe laser(980 nm IR)
Beam
splitter
Cognex
PatMax
Vision
system
Detector
Deep
Shallow
BX-10 Xj
measured
contour
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Implant Monitoring II.Implant Monitoring II. JunctionJunctionPhotoPhoto--VoltageVoltage
Control the implant andanneal by measuring sheetresistance (Rs
) of the
implanted layer after anneal
LED generates chargecarriers which spreadlaterally
Spreading is detected
capacitively, Rs
is
calculated
Non-contact, non-
destructive
Fast, high resolution
mapping
Good repeatability
Good correlation withconventional techniques
Works from USJs to deepimplants
Si substrate
Junction+ ++
LED
Pickup electrodes
0
200
400
600
800
1000
0 200 400 600 800 1000
Sheetr.4pp[
Ohm/sq.]
JPV Sheet resistance [Ohm/sq.]
Vendor 1
Vendor 2
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Dielectric Characterization I.Dielectric Characterization I. Spectroscopic EllipsometrySpectroscopic Ellipsometry
GES5E: R&D Spectroscopic Ellipsometer
to
meet requirements of emerging technologies
/
materials
Measures complex reflectance ratio
Parameters:
Spectral range:
from 190 nm to 2.5 m high resolution
and/or fast measurement mode
Unique combination with further
techniques:
Grazing X-Ray Reflectance
FT Infra-Red Spectroscopic Ellipsometry
up to
33 m
Adsorption, EPA: Ellipsometric
Porosimeter
(EP)at atmospheric pressure
( )Tknfer
r i
s
p,,tan ===
cos,tan
cos
tan
Wavelength
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Dielectric Characterization II.Dielectric Characterization II. NonNon--Contact MOS CV (VQ) for SiOContact MOS CV (VQ) for SiO22 and Highand High--
Non-destructivemeasurement technique toreplace traditional C-Vmeasurements for qualifying
oxide or other dielectricalong with interfaceproperties
in silicon wafers
Measured parameters
Tox
: Electrical oxidethickness
Vfb
: Flatband
voltage
Dit
: Interface state density
Qm
: Mobile charge
Vox
: Oxide voltage
Qeff
: Effective charge
Etunnel
: Tunneling electric
field
Vs
: Surface potential
Vsurf
: Surface voltage
Vtunnel
: Tunnel voltage
Hight throughput: completeanalysis in 15 minutes
Corona discharge Kelvin Probe
Illumination
VQ curve Tox
map
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Dielectric Characterization III.Dielectric Characterization III. Near FieldNear FieldScanning Microwave Microscope forScanning Microwave Microscope forLowLow--
Non-contact microwavetechnique to measure thedielectric constant of low-k
materials on productionwafers
Potential uniqueapplication: sidewalldamage monitoring
Near field antenna (10mtip size
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LowLow-- and Metal Layer Characterizationand Metal Layer Characterization Surface Acoustic WaveSurface Acoustic Wave
Non-contact, non-
destructive tool toobtain
Layer thickness
Bilayer thickness
Material properties(resistivity, grain size)
Laser excitation
generates acousticwaves whichpropagate
Propagation ismonitored, waveformand spectrum isanalyzed
1. Dark signal before waveexcitation.
2. Wave excitation with stripedpattern.
3. Wave motion and diffractionof probe beam to detector. Waveform and frequencyspectrum.
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Characterization of 3D Etched Structures andCharacterization of 3D Etched Structures and
ThrenchesThrenches Model Based Infrared ReflectometryModel Based Infrared Reflectometry
Thickness, depth,CD, and composition
can be determined
Sample is illuminatedby IR light
Reflections &absorptions from
trenches and filmsdetermine shape ofreflectance spectrum
Spectrum is analyzed
with a model of thesample structure,and parameters aredetermined by fittingthe model spectrum
Reflectance Spectrum
Interferencefringes
Absorpt ionbands
Exp. Data
Model Fit
Reflectanc
e
Wavenumber (cm-1)
Layers ofInterest
45Infrared
Light
1.4
20
micronswavelength
Detector
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Destructive / Analytical ToolsDestructive / Analytical Tools
Potential for 450 mm
DLTS: Deep Level
TransientSpectroscopy forcontamination analysis
LST: Light Scattering
Tomography for bulkmicrodefectcharacterization
SIRM: ScanningInfrared Microscopy forbulk defectcharacterization
SRP: Sheet ResistanceProfiling