1

0.13um Mixed Signal RF

Process Flow

TSS/FE 2012/12

2

GF 0.13um Technology

3

0.13um RF CMOS Overview

4

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

Process Modules

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

6

STI (Shallow Trench Isolation)

Deposit and pattern thin SiN (RX)

Si Substrate

STI Etch

STI gap fill – deposit SiO2

STI CMP

Wet SiN removal

SiN

RX (L10) Mask used to define active region.

Reverse(L11) Mask used;It is created by foundry and improve STI CMP uniformaity

and prevent Nitride residue.

Reverse active etch

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

8

Well Implants Deep NWELL(optional) - deep N-well is for better isolation from substrate noise.(L06)

Core – Multi-Vt transistors:Low/Standard/High Vts,Native device

IO – 1.8V,2.5V or 3.3V,Native device

Photoresist

Deep NWELL

Deep NWELL

Deep NWELL

Deep NWELL

Deep NWELL

Deep NWELL

Deep NWELL

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

10

Need two gate oxide thickness;Thin for core FETs and Thick for IO FETs

The gate oxide is grown in furnace,not deposited.It requires high quality to

have good reliability (Gate Oxide Integrity)

Dual Gate mask – L38

Gate Formation – (1) Dual Gate

11

1.Poly deposition

2.Poly gate mask(L60)

3. Poly gate etch

Gate Formation – (2) Poly Gate

The Poly CD control is critical and key to device performance.

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

13

NLDD for Core and IO NFETs

1.Thin NLDD Mask(L61)

2.Thin NLDD Pocket Imp.

(P type)

3.Thin NLDD Imp.(N type)

1.Thick NLDD Mask(L62)

2.Thick NLDD Imp.(N type)

1.LDD (Lightly Doped Drain)is used for minimize peak E fields that cause hot

carrier and breakdown.

2.The NLDD must be heavily doped to minimize series resistance.

14

PLDD for Core and IO NFETs

1.Thin PLDD Mask(L64)

2.Thin PLDD Pocket Imp.

3.Thin PLDD Imp.

1.Thick NLDD Mask(L23)

2.Thick NLDD Imp.

15

Spacer Formation

1.Spacer deposition

2. Spacer etch (blanket)

16

Source / Drain Implantation

1.N source/drain mask(L65)

2.N source/drain imp.

3.N source/drain anneal

1.P source/drain mask(L70)

2.P source/drain imp.

3.P source/drain anneal

17

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

18

1.

2.

3.

4.

Salicide Formation

1.Salicide block deposition

2.Salicide block mask (L68)

3.Salicide block etch

1.Cobalt deposition

Cobalt

1.1st RTA

2.Post RTA1 Cobalt remove

1.2nd RTA

The salicide is used to reduce Poly and diffusion Rs.

Technology progression: TiSix -> CoSix-> NiSix.Scaling requires smaller

silicide grain size to minimize Rs variations

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

20

1.Etch-stop layer deposition

2.ILD deposition

3.ILD CMP

4.Contact mask (L75)

5.Contact etch

6.Barrier metal deposition

7.W(tungsten) deposition

8.W-CMP

Contact Formation

21

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

22

M1 Formation- Single damascene

1.Etch-stop layer deposition

2.IMD deposition

3.Etch-stop layer deposition

4.Metal-1 mask (L80)

5.M1 Trench etch

6.Barrier seed deposition

7.Cu fill

8.Cu-CMP

23

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

24

MiM (Metal insulator Metal)-Optional

MIM capacitor must be located between MetalTop layer and the metal layer immediately below

There are two options for MiM – 1-Mask and 2-Mask ;Below is the 1-Mask MiM

FuseTop layer(L92) defines the top plate and metal-[n-1] layer defines the bottom plate of the MIM capacitor.

The capacitance is 1.0 fF/um2

25

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

26

Integration schemes for Dual Damascene

Mx/VIAx-1 Formation - dual damascene

1.Etch-stop layer deposition

2.IMD Via deposition

3.Etch-stop layer deposition

4.IMD Trench deposition

5.Etch-stop layer deposition

6.VIAx-1 mask (L85, L91, L94,

L97, L9R)

7.Dual damascene via etch

8.Mx mask(L88, L93, L96,

L9E, L98)

9.Barrier/seed deposition

10.Cu barrier

11.Cu deposition

12.Cu CMP

IMD(LK)

IMD(LK)

27

STI Formation

Well Formation

Gate Formation

Source/Drain Formation

Salicide Formation

Contact Formation

Metal-1 Formation – single damascene

MiM Formation

Mx/VIAx-1 Formation - dual damascene

PASSIVATION & BONDPAD Formation

28

1.Passivation-1 deposition (oxide + nitride)

2.L9C MASK + Etch

3.AL deposition

4.L9S MASK + ETCH

5.Passivation-2 deposition

6.L95 MASK + ETCH

7.Alloy

Passivation & Bond Pad Formation

L9C (L9S)

L95

29

Schematic Cross section

30

Thank you