001-91656Owner: NJX Rev ** Automotive Asynchronous SRAM Product Family Presentation Cypress Has the Industry’s Broadest Portfolio of High-Speed, Low-Power

001-91656 Owner: NJX Rev **

Automotive Asynchronous SRAM Product Family Presentation

Cypress Has the Industry’s Broadest Portfolio ofHigh-Speed, Low-Power and On-Chip ECC SRAMs

Product Family Presentation:

Automotive Asynchronous SRAM

1Cover

Automotive Asynchronous SRAM Product Family Presentation001-91656 Owner: NJXRev **

Modern Automotive Systems Need Ultra-Reliable SRAMs Modern automotive systems cannot tolerate single-bit errors in SRAMsTraditional SRAMs get corrupted by single-bit errors caused by unavoidable cosmic background radiation

Advanced computing systems will crash if there are bit errors in their SRAM configuration1 memories

Automotive data logging systems require ultra-reliable, low-power SRAMs to store critical data for long periods

Automotive manufacturers require high-speed SRAMs with Error-Correcting Code2 (ECC) for critical applications

Modern automotive systems require ultra-reliable, high-speed, low-power SRAMs with on-chip ECC

1 Memory devices used to boot up system configuration registers, where a single-bit error can cause a system crash2 Data encoded with extra parity bits to detect and correct bit errors

Infotainment Systemby Hyundai

Engine Control Unitby Bosch

Driver Assistance Systemby Hella

2Market Vision


Cypress Is the SRAM Market LeaderCypress is the world’s largest, most experienced Asynchronous SRAM1 supplier with:>35% share in the automotive market

10 generations of Asynchronous SRAM designs

More R&D investment than any competitor

Cypress has the broadest Asynchronous SRAM portfolio, offering:A one-stop shop for all automotive Asynchronous SRAM needs in Infotainment, Powertrain and driver-assistance systems

Automotive high-speed SRAMs from 256Kb to 16Mb

Automotive low-power SRAMs from 256Kb to 16Mb

Eight new ultra-reliable SRAMs with on-chip Error-Correcting Code for single-bit error detection and correction

Three new ultra-reliable PowerSnooze2 SRAMs, which enable both 10-ns access time and low power consumption

Cypress is the most dependable Asynchronous SRAM supplier, offering:Product support for >10 years

Lead times of ≤6 weeks with >99% on-time delivery

Multiple qualified fabs, assembly sites and test sites

Cypress is the global market leader in Asynchronous SRAMs with the broadest automotive portfolio

1 An SRAM device in which read or write operations do not require an external clock2 A Fast SRAM with a deep-sleep mode in addition to a conventional standby mode

3Market Positioning


Terms You Will Hear Today Asynchronous SRAMAn SRAM device in which read or write operations do not require an external clock

Fast SRAMHigh-speed Asynchronous SRAMs with an access time of ≤20 ns

More Battery Life™ (MoBL®) SRAMLow-power Asynchronous SRAMs with ≤2-µA/Mb standby current

Also known as MicroPower™ SRAM

Soft ErrorA bit error caused by cosmic background radiation

Failures-in-Time (FIT) RateReliability measurement of the projected failure rate of a device per megabit of data (FIT/Mb)

One FIT/Mb equals one projected bit failure per Mb of the data stored over one billion hours of device operation

Error-Correcting Code (ECC)Data encoded with extra parity bits to detect and correct bit errors

PowerSnooze™ SRAMA Fast SRAM with a deep-sleep mode in addition to a conventional standby mode

For example, the 12-ns 16Mb offering has a deep-sleep current of ≤1.37 µA/Mb and a standby current of ≤1.87 mA/Mb

ERR PinA status pin on Cypress Asynchronous SRAMs with on-chip ECC that indicates the occurrence of a single-bit error

4ToA


Design Problems Engineers FaceFIT Rates of <10 FIT/Mb are unachievable in standard SRAMs without on-chip ECCToday’s standard SRAMs have FIT Rates of 150-1,500 FIT/Mb

Correcting Soft Errors with system-level ECC solutions forces undesirable system design trade-offsSystem-level ECC solutions increase design complexity and cycle time

They also require additional memory and error-correcting chips, increasing board space and cost

Automotive systems require high-performance SRAMs with high speed and low standby currentA typical 16Mb high-speed SRAM with a 10-ns access time consumes 30-mA standby current

A typical 16Mb low-power SRAM with a 16-µA standby current has an access time greater than 35 ns

End-of-life decisions from SRAM suppliers force board redesign and product requalificationThe automotive market requires long product life cycles (>10 years) and suppliers with staying power

Cypress’s Asynchronous SRAMs solve these problems with: A FIT rate of <0.1 FIT/Mb, which is 1,000x to 10,000x lower than that of standard SRAMs

A single-chip solution with on-chip ECC that reduces design complexity, board space, cycle time and cost

A 10-ns access time and a 22-µA deep-sleep current (PowerSnooze SRAM) that is 1,000x lower than the 30-mA standby current of conventional 16Mb high-speed SRAMs

Support for >10 years on all Asynchronous SRAMs

Cypress offers the broadest portfolio of high-performance automotive SRAMs with on-chip ECC and backs it up with the long-term support and the staying power you need

5Design Problems


Cypress 2013 Annual Report Cover

Cypress is so proud of itsAutomotive design wins that we listed them on the cover of our 2013 Annual Report

6Solution


Cypress Automotive Asynchronous SRAMs vs. Competition’s

Access Time (TAA

) 45 ns, 55 ns, 70 ns 45 ns, 55 ns, 70 ns

Standby Current (ISB

1) 7 µA 20 µA

Grade Auto A2, E3 Auto A2, E3

Operating Voltage (VCC

) 1.65-5.50 V 1.65-5.50 V

On-Chip ECC 16Mb Not available

Soft Error Rate4 <0.1 FIT/Mb <1 FIT/Mb

High-Speed SRAM Features CY7Cx IS64x

3 AEC-Q100: -40ºC to +125ºC4 The rate at which a device is predicted to have Soft Errors

1 Maximum value for 4Mb at 3.0 V, +85C2 AEC-Q100: -40ºC to +85ºC

Low-Power SRAM Features CY62x IS65X

7

5 Typical value for 4Mb at 3.0 V, +85C6 Value for 4Mb PowerSnooze SRAM

Access Time (TAA) 10 ns 10 ns

Active Current (ICC5) 100 mA 40 mA

Grade Auto A2, E3 Auto A2, E3

Operating Voltage (VCC) 1.65-5.50 V 1.65-5.50 V

On-Chip ECC 8Mb, 16Mb 1-8Mb

Standby Current 10 µA6 Not available

Soft Error Rate5 <0.1 FIT/Mb <0.5 FIT/Mb

Competition


Fast SRAM Low-Power SRAM (MoBL®1)PowerSnooze™2

SRAMSerial SRAM

Non-ECC3 ECC3 Non-ECC3 ECC3 ECC3 Quad-SPI4, ECC3

Automotive Portfolio: Asynchronous SRAM

CY7C106x 16Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

32

Mb

-12

8M

b2

Mb

-16

Mb

64

Kb

-1M

b

CY6216x 16Mb; 1.8-5.0 V

45 ns; x8, x16, x32Grade: E5

CY7S106x 16Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

CY7C1020512Kb; 2.6, 3.3 V

15 ns; x16Grade: E5

CY7C1011 2Mb; 3.3 V10 ns; x16

Grades: A6 and E5

CY7C104x 4Mb; 3.3, 5.0 V10 ns; x8, x16

Grades: A6 and E5

CY7C199 256Kb; 5.0 V

12 ns; x8Grades: A6 and E5

CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V

10 ns; x8, x16Grades: A6 and E5

CY6212x 1Mb; 3.0, 5.0 V 45 ns; x8, x16

Grades: A6 and E5

CY6213x2Mb; 3.0 V


CY6214x4Mb; 3.0, 5.0 V45 ns; x8, x16

Grades: A6 and E5

CY6215x8Mb; 3.0, 5.0 V


CY6216x 16Mb; 3.0 V

45 ns; x8, x16Grade: A6

CY62256256Kb; 5.0 V


3 Error-correcting code4 Serial peripheral interface

1 More Battery Life™2 Fast SRAM with low-power sleep mode

CY7C107x32Mb; 3.3 V

12 ns; x8, x16

CY7C101212Mb; 3.3 V10 ns; x24

CY7C105x8Mb; 3.3 V

10 ns; x8, x16

CY7C106x16Mb; 1.8, 3.3 V

10 ns; x8, x16, x32

CY7C10243Mb; 3.3 V10 ns; x24

CY7C1034 6Mb; 3.3 V10 ns; x24

CY7C18564Kb; 5.0 V

15 ns; x8

CY6217x32Mb; 2.5, 3.0, 5.0 V

55 ns; x8, x16

CY6218x64Mb; 2.5, 3.0 V

55 ns; x8, x16

5 AEC-Q100: -40ºC to +125ºC 6 AEC-Q100: -40ºC to +85ºC

Other densitiesNDA RequiredContact Sales

Other densitiesNDA RequiredContact Sales

CY7C104x4Mb; 1.8-5.0 V 10 ns; x8, x16

Grade: E5

CY6214x 4Mb; 1.8-5.0 V 45 ns; x8, x16

Grade: E5

CY7S104x4Mb; 1.8-5.0 V 10 ns; x8, x16

Grade: E5

CY7C105x 8Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

CY7S105x 8Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

NEW NEW

NEW

NEW

NEW

NEW

NEW

NEW

Production Development

QQYYQQYYAvailability

Sampling Concept

AutomotiveIndustrial

Q115

Q115 Q115 Q115

Q115

8Roadmap


Fast SRAM Low-Power SRAM (MoBL®1)PowerSnooze™2

SRAMSerial SRAM

Non-ECC3 ECC3 Non-ECC3 ECC3 ECC3 Quad-SPI4, ECC3

Automotive Portfolio: Asynchronous SRAM

CY7C106x 16Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

32

Mb

-12

8M

b2

Mb

-16

Mb

64

Kb

-1M

b

CY6216x 16Mb; 1.8-5.0 V

45 ns; x8, x16, x32Grade: E5

CY7S106x 16Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

CY7C1020512Kb; 2.6, 3.3 V

15 ns; x16Grade: E5

CY7C1011 2Mb; 3.3 V10 ns; x16

Grades: A6 and E5

CY7C104x 4Mb; 3.3, 5.0 V10 ns; x8, x16

Grades: A6 and E5

CY7C199 256Kb; 5.0 V


CY7C1019/21 1Mb; 2.6, 3.3, 5.0 V


CY6212x 1Mb; 3.0, 5.0 V 45 ns; x8, x16

Grades: A6 and E5

CY6213x2Mb; 3.0 V


CY6214x4Mb; 3.0, 5.0 V45 ns; x8, x16

Grades: A6 and E5

CY6215x8Mb; 3.0, 5.0 V


CY6216x 16Mb; 3.0 V

45 ns; x8, x16Grade: A6

CY62256256Kb; 5.0 V


3 Error-correcting code4 Serial peripheral interface

1 More Battery Life™2 Fast SRAM with low-power sleep mode

CY7C107x32Mb; 3.3 V

12 ns; x8, x16

CY7C101212Mb; 3.3 V10 ns; x24

CY7C105x8Mb; 3.3 V

10 ns; x8, x16

CY7C106x16Mb; 1.8, 3.3 V

10 ns; x8, x16, x32

CY7C10243Mb; 3.3 V10 ns; x24

CY7C1034 6Mb; 3.3 V10 ns; x24

CY7C18564Kb; 5.0 V

15 ns; x8

CY6217x32Mb; 2.5, 3.0, 5.0 V

55 ns; x8, x16

CY6218x64Mb; 2.5, 3.0 V

55 ns; x8, x16


CY7C104x4Mb; 1.8-5.0 V 10 ns; x8, x16

Grade: E5

CY6214x 4Mb; 1.8-5.0 V 45 ns; x8, x16

Grade: E5

CY7S104x4Mb; 1.8-5.0 V 10 ns; x8, x16

Grade: E5

CY7C105x 8Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

CY7S105x 8Mb; 1.8-5.0 V

10 ns; x8, x16, x32Grade: E5

NEW NEW

NEW

NEW

NEW

NEW

NEW

NEW

Production Development

QQYYQQYYAvailability

Sampling Concept

AutomotiveIndustrial

Q115

Q115 Q115 Q115

Q115

9Roadmap

CY6215x 8Mb; 1.8-5.0 V

45 ns; x8, x16, x32Grade: E5

Q315 Q315Q315

CY6218/9x64Mb; 1.8-5.0 V

55 ns; x8, x16, x32Grade: E5

CYSS108x 64Mb; 1.8-5.0 V

12 ns; x8, x16, x32Grade: E5

CY6217x 32Mb; 1.8-5.0 V

45 ns; x8, x16, x32Grade: E5

CYSS107x 32Mb; 1.8-5.0 V

12 ns; x8, x16, x32Grade: E5

CYSS064/256/51264-512Kb; 1.8, 3-5.0 V

40 MHz, 108 MHz Grade: E5

CYSS1011Mb; 1.8, 3.0-5.0 V 40 MHz, 108 MHz

Grade: E5


Infotainment systems Driver assistance Driver information Powertrain Telematics

Applications

Access time: 10 ns or 12 ns (see Family Table)Bus-width configurations: x8, x16, x32Wide operating voltage range: 1.65-5.5 VAvailable in automotive temperature (A1 and E2) gradesIndustry-standard, RoHS-compliant packagesError-correcting code (ECC) to detect/correct single-bit errorsBit-interleaving to avoid multi-bit errorsError-indication (ERR) pin to indicate single-bit errorsPackages: 48-pin VFBGA, 48-pin TSOP1

Features

Preliminary Datasheet: Contact Sales

Collateral

3 Byte high enable 4 Byte low enable

18-23

Fast SRAM with ECC

CE OE WE BHE3 BLE4

Address

I/O MuxAddressDecoder

Sense Amps

ECC Decoder

Input Buffer

ECC Encoder

Control Logic

SRAM Array

SRAM Array

ERRData

8, 16, 32


Density MPN Access Time Supply Current (Max. at 85ºC)

4Mb CY7C104x 10 ns 45 mA

8Mb CY7C105x 10 ns 60 mA

16Mb CY7C106x 10 ns 110 mA

Product Overview:

Fast SRAM Family with On-Chip ECC

10Product Details

Family Table

Block Diagram

Sampling: Q1 2015 (16Mb)Production: Q1 2015 (16Mb)

Availability


Infotainment systemsTelematics

Applications

Access time: 45 ns for 16MbStandby current: 16 µA for 16MbMultiple bus-width configurations: x8, x16 and x32Wide operating voltage range: 1.65-5.5 VAvailable in automotive temperature (A2 and E3) gradesIndustry-standard, RoHS-compliant packagesError-correcting code (ECC) to detect/correct single-bit errorsBit-interleaving to avoid multi-bit errorsError-indication (ERR) pin to indicate single-bit errorsPackages: 48-pin VFBGA, 48-pin TSOP1

Features


Collateral

Family Table


Availability

Block Diagram

4 Byte high enable 5 Byte low enable

MoBL®1 SRAM with ECC

CE OE WE BHE4 BLE5

I/O MuxAddressDecoder

Sense Amps

ECC Decoder

Input Buffer

ECC Encoder

Control Logic

SRAM Array

SRAM Array

18-23

Address

Data8, 16, 32

ERR

1 More Battery Life™ 2 AEC-Q100: -40ºC to +85ºC 3 AEC-Q100: -40ºC to +125ºC

Density MPN Standby Current

(Max. at 85ºC)Standby Current

(Typ. at 25ºC)

4Mb CY6214x 8 µA 2.5 µA

8Mb CY6215x 9 µA 3.0 µA

16Mb CY6216x 16 µA 4.6 µA

32Mb CY6217x 58 µA 9.0 µA

64Mb CY6218x 58 µA 9.0 µA

Product Overview:

MoBL® SRAM Family with On-Chip ECC

11Product Details


Infotainment systems Driver assistance Driver information Powertrain Telematics

Applications

Access time: 10 ns or 12 ns (see Family Table)PowerSnooze™: Additional power-saving (deep-sleep) modeDeep-sleep current: 23 µA for 16Mb (see Family Table)Multiple bus-width configurations: x8, x16 and x32Wide operating voltage range: 1.65-5.5 VAvailable in automotive temperature (A1 and E2) gradesIndustry-standard, RoHS-compliant packagesError-correcting code (ECC) to detect/correct single-bit errorsBit-interleaving to avoid multi-bit errorsPackages: 48-pin VFBGA, 48-pin TSOP1

Features


Collateral

Family Table


Availability

Block Diagram

4 Byte high enable 5 Byte low enable3 Deep-sleep

20

Fast SRAM with PowerSnooze™

CE OE WE BHE4 BLE5

Address

DS3

Address Decoder

Sense Amps

ECC Decoder

Input Buffer

Control Logic

SRAM Array

Power Management

Block(Enables

PowerSnooze)

ECC Encoder

Data8, 16, 32

ERRI/O Mux


Density MPN Access Time Deep Sleep Current

(Max. at 85ºC)4Mb CY7S104x 10 ns 12 µA8Mb CY7S105x 10 ns 22 µA

16Mb CY7S106x 10 ns 22 µA

Product Overview:

Fast SRAM Family with PowerSnooze™

12Product Details


Infotainment systems

Applications

High speed: 108-MHz serial peripheral interface (SPI)Ultra-low standby current: 6 µA at 85ºC (1Mb)SPI: Single, dual and quad channelsWide operating voltage range: 1.8-5.0 VAvailable in automotive temperature (A1 and E2) gradesError-correcting code (ECC) to detect/correct single-bit errorsPackages: 8-pin SOIC, 8-pin TSSOP

Features


Collateral

Family Table

Availability

Block Diagram

SRAMArray

SPI Control Logicand

Instruction Decoder

Memory Dataand

Address Control

Register

CS3

Clock

I/O0

I/O1

I/O2

I/O3

Serial SRAM

3 Chip select

Contact Sales


Density MPN Clock FrequencyStandby Current

(Typ. at 25ºC)1Mb CYSS101x 108 MHz 1 µA

32Mb CYSS132x 108 MHz 8 µA64Mb CYSS164x 108 MHz 8 µA

Product Overview:

Serial SRAM Family

13Product Details


Automotive BrochureAutomotive Product Selector Guide

SRAM Solution Example:

Automotive Infotainment System

Design ChallengesLimited availability of automotive Asynchronous SRAMs with Error-Correcting CodeLong lead times to sampling and productionShort life cycle of available products

Cypress SRAM SolutionAsynchronous SRAMs with on-chip ECC in automotive

grade≤6 weeks lead times in production at >99% on-time delivery>10 years of support and a roadmap for the future

SRAM Value

Suggested Collateral

Block Diagram

How To Get Started

Click on the links above to download the SRAM PortfolioOrder Samples from your distributor: www.cypress.com/DistiListRegister at www.cypress.com/TechnicalSupport for online technical support

MCU

Navigation,Entertainment

and Communications

Subsystems

USB

CAN

Touch Controller

SRAM162

2

2

2

I2C

2

Automotive Infotainment Systemby Hyundai

14Product Example


Here’s How to Get Started

1. Find the Cypress equivalent for a competitor’s part: www.cypress.com/Crossreference

2. Select products from the product selector table: www.cypress.com/productselector

3. Register to access online technical support: www.cypress.com/TechnicalSupport

4. Take our Asynchronous SRAM training: www.cypress.com/GettingStarted

5. Download the Cypress automotive roadmap: www.cypress.com/automotiveroadmap

6. Visit the Asynchronous SRAM with ECC webpage: www.cypress.com/AsyncSRAMECC

15Getting Started

001-91656 Owner: NJXRev **

APPENDIX

16AppendixAutomotive Asynchronous SRAM Product Family Presentation



16Mb MoBL® SRAM Product Selector GuidePart Number Bus Width Access Time # CE Pins Voltage Temp Package

CY62167G30-45BVXA x16 45 ns 2 2.20-3.60 V -40 to 85°C 48-VFBGA

CY62167G30-55BVXE x16 55 ns 2 2.20-3.60 V -40 to 125°C 48-VFBGA

CY62167G30-45ZXA x16 45 ns 2 2.20-3.60 V -40 to 85°C 48-TSOP I

CY62167G30-55ZXE x16 55 ns 2 2.20-3.60 V -40 to 125°C 48-TSOP I

16Mb MoBL SRAM Part Numbering Decoder

CY 6216 7 G 30 - XX XX XA/E

17

Pb-Free Automotive Temperature Grades; A = -40ºC to 85ºC, E = -40ºC to 125ºC

Package Type: BV = 48-VFBGA, Z = 48-TSOP I

Speed Grade: 45 = 45 ns, 55 = 55 ns

Voltage Range: 30 = 2.20-3.60 V

Process Technology: G = 65 nm

Bus Width: 7 = x16

6216: 16Mb MoBL SRAM Family

Company ID: CY = Cypress

Product Selector Guide



16Mb Fast SRAM Product Selector GuidePart Number Bus Width Access Time # CE Pins Voltage Temp Package

CY7C1061G30-10ZXE x16 10 ns 1 2.20-3.60 V -40 to 125°C 48-TSOP I

CY7C1061G30-10BV1XE x16 10 ns 1 2.20-3.60 V -40 to 125°C 48-VFBGA

CY 7C106 1 G 30 - 10 XXX XE

16Mb Fast SRAM Part Numbering Decoder

18

Pb-Free Automotive Temperature Grade; E = -40ºC to 125ºC

Package Type: Z = 48-TSOP I, BV1 = 48-VFBGA

Speed: 10 = 10 ns

Voltage Range: 30 = 2.20-3.60 V

Process Technology: G = 65 nm

Bus Width: 1 = x16

7C106: 16Mb Fast SRAM Family

Company ID: CY = Cypress

Product Selector Guide


References and LinksAsynchronous SRAM with ECC webpage: www.cypress.com/AsyncSRAMECC

Asynchronous SRAM training: www.cypress.com/GettingStarted

Cypress Automotive roadmap: www.cypress.com/automotiveroadmap

Cypress Product Selector Guide: www.cypress.com/PSG

Knowledge Base articles: www.cypress.com/AsyncKBA

Asynchronous SRAM datasheets: www.cypress.com/AsyncDatasheets

Asynchronous SRAM app notes: www.cypress.com/AsyncAppNotes

SRAM Board Design Guidelines training video: www.cypress.com/SRAMDesignGuidelines

4Mb Asynchronous SRAM with ECC preliminary datasheets: www.cypress.com/contactus

Cypress equivalent for a competitor’s part: www.cypress.com/Crossreference

Product selector table: www.cypress.com/productselector

Online technical support: www.cypress.com/TechnicalSupport

19References


Competitor

Asynchronous Fast SRAM (R1LV1616RBG-5SI) without ECCPrice: $5.441

BOM Integration

Additional SRAM for ECC data (RMLV0416EGBG-4S2)Price: $2.131

Additional Value

Cost of creating MCU firmware for ECC logicValue: $0.152

Competitor

RMLV0416EGBG-4S2

BOM Integration Value

Cost of Creating MCU Firmware for ECC Logic

Total Additional Value

Total Value Delivered

Automotive MicroPower SRAM with ECC: Total Cost:

19% Total Savings:

CY62167G30-45BVXA$6.271

$1.45

1 Approximate 100ku pricing2 5 man-weeks at $3,000 per man-week = $15,000 (amortized over 100ku)

Automotive 16Mb SRAM with On-Chip ECC

20

$5.44

$2.13

$2.13

$0.15

$0.15

$7.72

Pricing

Documents

001-91656Owner: NJX Rev ** Automotive Asynchronous SRAM Product Family Presentation Cypress Has the Industry’s Broadest Portfolio of High-Speed, Low-Power