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- PicoSEC - STMicroelectronics activities Overview. D. Sanfilippo. Outline. The Silicon PhotoMultiplier Technology overview Electro-optical characteristics STMicroelectronics activities overview. The Silicon Photo Multiplier (SiPM). - PowerPoint PPT Presentation
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STMicroelectronicsIndustrial and Multisegment Sector R&D - Catania
- PicoSEC -STMicroelectronics activities
Overview
D. Sanfilippo
19 January 2012
Outline
The Silicon PhotoMultiplierTechnology overviewElectro-optical characteristicsSTMicroelectronics activities overview
2D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
The Silicon Photo Multiplier (SiPM)
The Silicon PhotoMultiplier (SiPM) is a multi-cell semiconductor photon sensor; each cell operates as an independent photon counterCells are biased above the breakdown voltage and operate in Geiger mode; the discharge is quenched by a resistor connected to each diodeThe individual signal amplitude does not depend on the number of photons firing the cell: each element operates digitally as a binary deviceThe SiPM output signal amplitude is the sum of signals from all the fired cells: it works as an analog detector that can measure light intensity
+Vbias
OUT
one cell
SPAD Rquenching
Rout
n cells
K
nK
1 photon
n photons
K
nK
1 photon
n photons
K
nK
1 photon
n photons
3D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
Technological features
N on P technologyShallow junctionIn-situ doped poly-silicon cathode layerIntegrated poly-silicon resistors
4
Anode backside contact
P+ type
ARC double layer
Thin optical trench with metal fillingTunable Anti-reflection coatingDedicated gettering techniquesDouble layer passivation
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
Device layout
Single pixel
5
Pixel 1 Pixel 2
Pixel 3 Pixel 4
Single pixel
Monolithic Array 2x2
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
SMD Optical Package
6
Bottom viewTop view
Cross section
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
SiPM electrical characteristics
Bias range
High bias discharge
Breakdown
7
Typical Breakdown voltage: 28 VOperative over-voltage range (OV): 3 ÷ 6 VGain: ~ 3*106 · @ 3 V OVDark current: ~ 250 nA/mm2 @ 3 V OV
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
Optical characterization
8
Laser HeadLaser Driver
Computer
Power Supply
Optical Fiber
Oscilloscope
Dark Box
SiPM
Experimental Setup
Pulse Amplitude Spectrum
Oscilloscope acquisition
0 0.01 0.02 0.03 0.04 0.05 0.060
5
10
15
20
25
Pulse Amplitude (V)C
ount
s
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
9
STMicroelectronics core activity:
Develop a dedicated photon sensor for the Project,in particular a Silicon PhotoMultiplier (SiPM).
Specific items:Design a new device with a dedicated layoutOptimize the fabrication processDesign and develop a functional packagePerform the electrical characterizationPerform the optical characterization
Activities overview
D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania
19 January 2012
Thank You!
10D. Sanfilippo -
Silicon PhotoMultiplier - IMS R&D
Catania