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IXYS 2008

Product Marketing IXYS

250V Ultra Junction X3-Class HiPerFET™ Power MOSFETs

IXYS Corporation

www.ixys.com July 2017

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Developed using a charge compensation principle and proprietary process technology

Best-in-class Figure of Merit (on-state resistance times gate charge)

Optimized fast, soft-recovery body diodes dv/dt ruggedness

Superior avalanche capability

Higher efficiency

High power densities

Easy to design in Available in international standard packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227

Product Line Introduction Offering best-in-class on-state resistance and gate charge Figure of Merit

Key Technology Advantages

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Ultra Junction Technology (combination of charge compensation principle and IXYS process technology)

Best-in-class Figure of Merit (RDS(on) x Qg) Low conduction and switching losses Lowest on-state resistances in industry (5mΩ in TO-264, 4.5mΩ in SOT-227)

Fast soft-recovery body diode

Minimizes voltage overshoots and electromagnetic interference (EMI) Able to achieve high efficiency and avoid device failure by removing all the

leftover energies during high-speed switching

Enhanced ruggedness

Superior avalanche capability dv/dt ruggedness Robust against device failure induced by voltage transients and accidental

turn-on of parasitic bipolar transistors

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Available Parts

Part Number

VDSS

(V)

ID25

(A)

RDS(on)

max. (mΩ)

Qg(on)

typ. (nC)

trr

typ. (ns)

RthJC

max. (°C/W)

Package type

IXFA30N25X3 250 30 60 21 72 0.71 TO-263

IXFP30N25X3 30 60 21 72 0.71 TO-220

IXFP30N25X3M 30 60 21 72 3.5 OVERMOLDED TO-220

IXFY30N25X3 30 60 21 72 0.71 TO-252

IXFA60N25X3 60 23 50 84 0.39 TO-263

IXFP60N25X3 60 23 50 84 0.39 TO-220

IXFP60N25X3M 60 23 50 84 3.5 OVERMOLDED TO-220

IXFQ60N25X3 60 23 50 84 0.39 TO-3P

IXFA80N25X3 80 16 83 105 0.32 TO-263

IXFH80N25X3 80 16 83 105 0.32 TO-247

IXFP80N25X3 80 16 83 105 0.32 TO-220

IXFQ80N25X3 80 16 83 105 0.32 TO-3P

IXFH120N25X3 120 12 122 116 0.24 TO-247

IXFQ120N25X3 120 12 122 116 0.24 TO-3P

IXFT120N25X3HV 120 12 122 116 0.24 TO-268HV

IXFH150N25X3 150 9 154 134 0.16 TO-247

IXFT150N25X3HV 150 9 154 134 0.16 TO-268HV

IXFH170N25X3 170 7.4 190 135 0.13 TO-247

IXFK170N25X3 170 7.4 190 135 0.13 TO-264

IXFN170N25X3 170 7.4 190 135 0.32 SOT-227

IXFT170N25X3HV 170 7.4 190 135 0.13 TO-268HV

IXFK240N25X3 240 5 345 165 0.1 TO-264

IXFX240N25X3 240 5 345 165 0.1 PLUS247

IXFN240N25X3 240 4.5 345 165 0.18 SOT-227

Applications

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Flyback converter for telecom power supplies

Synchronous rectification in a buck converter

Half-bridge Class-D audio amplifier

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Easily found on www.ixys.com

Power Devices -> DISCRETE MOSFETs -> N-Channel: Ultra Junction X-Class Power MOSFETs -> 250V X3-Class HiPerFET™ MOSFETs

Normenclature

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IX F N 240 N 25 X3

3rd Generation Ultra Junction Technology

Voltage rating, 250V

N-channel MOSFET

Current rating, 240A

Package type, SOT-227

HiPerFET™ MOSFET

IXYS

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