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Eleazar Falco
Application Engineer
eleazar.falco@we-online.de
SiC-MOSFET: Designing high-performance Gate Driver
Systems with WE-AGDT Transformers
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Agenda
2
Breve Repaso de tecnología Carburo de Silicio (SiC)
Consideraciones Importantes: Sistemas driver para SiC-MOSFET
Por qué un voltaje negativo para el ‘turn-off’?
CMTI: Un parámetro crítico !
La fuente de alimentación auxiliar aislada
La nueva serie de transformadores WE-AGDT
Diseños de referencia para la serie WE-AGDT
Applicaciones SiC: el presente y el futuro !!
Conclusión y Repaso de los puntos importantes
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
3
Breve Repaso de tecnología Carburo de
Silicio (SiC)
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Breve Repaso de tecnología Carburo de Silicio (SiC)
Tecnología SiC: Componentes Wide Band Gap (WBG)
4
1.1 eV 3.3 eV 3.5 eV > 8 eV
Banda de Conducción
Banda de Valencia
Conductores Semiconductor(Si)
Semiconductor(SiC)
Semiconductor(GaN)
Aisladores
Energía Bandgap
• Los electrones necesitan energía para ‘saltar’ a la banda de conducción en los semiconductores
• 1 eV (electron-volt) = 1.602×10exp(−19) joule
• Componentes SiC – De 2 a 3 veces más energía de banda prohibida que Silicio. Mejor conductividad térmica, velocidad de
saturación de electrones y mayor campo eléctrico de ruptura que Silicio.
Solapamiento
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Breve Repaso de tecnología Carburo de Silicio (SiC)
Silicon Carbide versus Silicon-based Devices Performance
5
Más alto voltaje de ruptura (1700 V)
Temperatura de operación elevada. Hasta 200°C
(limitada por el encapsulado!)
Tamaño del dado más pequeño
Menor carga y capacitancia de puerta
Ron es menor y más estable con variaciones de
Temperatura
Comparado con transistores basados en Silicio
(Power MOSFET or IGBT): Ventajas para las aplicaciones:
Mayor voltaje y potencia.
Velocidad de conmutación mucho más
rápida (x10). Mayor Eficiencia.
Frequencia de conmutación más alta. Menor
tamaño y coste total del sistema.
Menos sensible a temperatura. Mayor
fiabilidad y robustez. Potencia por encima de
300 kW en algunas aplicaciones !
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
6
Consideraciones Importantes: Sistemas
Gate driver para SiC-MOSFET
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Sistemas Gate driver para SiC-MOSFET
Sistema típico de controlador de puerta para SiC-MOSFET (simplificado)
7
• Ejemplo de un Sistema de controladorde puerta para SiC-MOSFET
• SiC-MOSFET – Muy alto dv/dtgenerado al conmutar: Consideracionesespeciales !
• Conexión Kelvin adicional en la fuentedel SiC-MOSFET. Mayor velocidad deconmutación con alto di/dt en drenador-surtidor.
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Sistemas Gate driver para SiC-MOSFET
Conmutación del SiC-MOSFET
8
SiC-MOSFET Conmutación
Encendido
SiC-MOSFET Conmutación
Apagado
Análisis más detenido del lazo de corriente de puerta durante la conmutación encendido/apagado
• Conmutación: Carga y descarga de lacapacitancia de puerta.
• Cg variable. Depende de lascondiciones de operación.
• Encendido: Capacitancia de salida delraíl de tensión positivo proporciona lacarga para Cg.
• Apagado: Cg se descarga a través dela capacitancia de salida del raíl detensión negativo.
• Inductancias parásitas del lazo (Lon yLoff) se deben minimizar para unmejor rendimiento.
Ig_onIg_off
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Sistemas Gate driver para SiC-MOSFET
Requisito de corriente del gate driver IC. Ejemplo simplificado (turn-on)
9
• Aproximación de la corriente pico de puerta con Lon≈0:
I𝑝𝑘_𝑜𝑛 ≈∆𝑄𝑔
𝑡𝑠𝑤_𝑜𝑛
∆𝑄𝑔 de la hoja de datos
para ∆𝑉𝑔𝑠
Ejemplo para Vgs_on = +15V, Vgs_off = −4V
• Si 𝑡𝑠𝑤_𝑜𝑛 = 5ns, entonces: 𝐼𝑝𝑘_𝑜𝑛 = 1.86A
R𝑜𝑛_𝑚𝑎𝑥 =∆𝑉𝑔𝑠
𝐼𝑝𝑘_𝑜𝑛≈ 8.45 Ω
• Repetir el procedimiento para turn-off (apagado)
• Seleccionar Gate Driver IC
• Este es solo un punto de Inicio del diseño!
• Encontrar compromiso para Eficiencia, EMI,
rendimiento térmico, tamaño y coste.
• Ajustar experimentalmente.
• Tomar margen (e.g. 20%) para compensar por Lon≠0:
I𝑝𝑘_𝑜𝑛 = 1.86 ∙ 1.2 ≃ 𝟐. 𝟐𝟓 𝑨
• La resistencia de encendido total Ron está limitada a:
Este valor incluye ya las resistencias internas de los encapsulados!
C3M0280090D (Cree)
9.3 nC
* Requisito de provisión de corriente pico del Gate driver IC!
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Sistemas Gate driver para SiC-MOSFET
Rizado de resonancia del voltaje de puerta: EMI y Eficiencia
10
𝐋𝐨𝐟𝐟 𝐑𝐨𝐟𝐟 𝐃
𝐑𝐠𝐬
𝐂𝐠𝐬
𝐂𝐠𝐝
𝐂𝐝𝐬
𝐋𝐒 𝐒𝐰𝐢𝐭𝐜𝐡
Componentes parasíticos del lazo de apagado (turn-off)
𝐑𝐨𝐟𝐟 → Total Gate Resistance𝐋𝐨𝐟𝐟 → Parasitic Loop Inductance𝐂𝐠𝐬 → Gate − source parasitic Capacitance𝐂𝐠𝐝 → Miller Capacitance gate − drain
𝐂𝐝𝐬 → Drain − source Capacitance𝐑𝐠𝐬 → Gate − source pulldown resistor
SiC-MOSFET – Está aquí para conmutar rápido !! …
• Ron y Roff – Pequeñas para un pico de corriente alto
• Lon y Loff deben ser mínimizadas:
• Efecto: Circuito resonante serie RLC subamortiguado
(Lon or Loff, Cg)
• EMI (rizado resonante), picos de sobrevoltaje y
subvoltaje.
• Agravado con mayor dv/dt y di/dt al conmutar !!
• Primero, minimizar Inductancia parásita (Lon, Loff)
• Si es necesario, bajar la velocidad de conmutación
(Roff or Ferrite Bead) (ej. WE-CBF de Würth
Elektronik). Probar también con Cgs (pequeño).
RLC Series
Resonant Network
𝑽𝑳 = 𝑳 ∙𝒅𝒊
𝒅𝒕𝑳 ↓
𝒅𝒊
𝒅𝒕↑
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Sistemas Gate driver para SiC-MOSFET
Impacto de la Inductancia Parasítica (LTSpice)
11
Lp=50nH Lp=10nH
… es esencial el minimizar la inductancia parasitaria!
Synchronous Buck Converter
(500kHz, D=0.4) (Sync. Switch
Vgs con +15V,0V)
24V !!18V
Sin Rizado AFRizado AF
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Sistemas Gate driver para SiC-MOSFET
Consejos para minimizar la inductancia parásita del lazo de corriente de puerta
12
Cómo reducir la inductancia parasitaria?
Minimizar el área del lazo de corriente de puerta(ej. Con un pequeño plano bajo las pistas de puertaen la PCB para la corriente de retorno).
Coloca la fuente de alimentación auxiliar y suscondensadores de salida junto al Gate Driver IC yel SiC-MOSFET.
Utilizar pistas PCB cortas y anchas.
Utilizar components SMD con muy baja inductancia
parásita interna (e.g. MLCC (WCAP-CSGP de
Würth Elektronik)
El área de estos
lazos de
corriente debe
ser minimizado!!
𝐋𝐩 ∝ 𝐀𝐫𝐞𝐚𝐥𝒂𝒛𝒐
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Sistemas Gate driver para SiC-MOSFET
Gate Driver IC con opción conexión de puerta única y doble
13
Conexión de puerta única
(diode for different Ron and Roff)Doble conexión de puerta (on/off)
• Tiempos de conmutación de
encendido y apagado afectan de
manera distinta el rendimiento
(EMI, Eficiencia, etc)
• Diferentes resistencias para
encendido y apagado.
• Anti-parallel diode.
• Rgs pull-down resistor - Mantiene
SiC-MOSFET apagado cuando no
hay señal de control.
• Una pequeña Cgs (e.g. WCAP-
CSGP) puede ayudar con rizado
AF y efecto Miller turn-on.
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
14
Por qué un voltaje negativo para el
‘turn-off’?
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Por qué un voltaje negativo para el ‘turn-off’?
SiC base Configuration: Half-bridge building block
15
SiC-MOSFET Bloque Half-bridge
Básico en convertidores DC-DC síncronos, inversores, etcEsquemático de Inversor DC-AC trifásico simplificado
Muy alto dv/dt !!
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Por qué un voltaje negativo para el ‘turn-off’?
Miller-Effect Turn-on Event: Cuidado !!
16
Half-bridge Conmutación con
Voltaje unipolar
(Low-Side Switch example)
El turn-on for efecto Miller consiste en el encendido de un MOSFET a causa de la corriente de
desplazamiento en la capacitancia Miller (Cgd)
SW Node
Requerimiento: Zgs << Zgd, de lo contrario Vgs glitch puede
exceder umbral y encender el SiC-MOSFET – Miller Effect !!
SW NodeVsw
Aproximación: Zgs ≈ (ZCgs//Rgs)//(ZLoff+Roff)
Recordar Fourier
Análisis !
Vgs𝐈𝐦𝐢𝐥
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Por qué un voltaje negativo para el ‘turn-off’?
Miller-Effect Turn-on. Ejemplo Half-bridge low-side (Unipolar Vdrive)
17
Half-bridge Conmutación con Voltaje Unipolar
(ejemplo low-side SiC-MOSFET)Consecuencias: Menor Eficiencia, Peor fiabilidad y
robustez. Fallo prematuro del SiC-MOSFET!!
<
Miller turn-on!
High-side turn-on!
Dead-time
VgsVg_ls
Vg_hs
Low-side turn-off!
Shoot-through Current!Ids
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Por qué un voltaje negativo para el ‘turn-off’?
Miller-Effect Turn-on. Ejemplo Half-bridge Low-side (Bipolar Vdrive))
18
Half-bridge Conmutación con Voltaje Bipolar
(ejemplo low-side SiC-MOSFET)
Al aplicar un voltaje negativo para apagado del SiC-MOSFET, el turn-
off es más robusto y fiable incluso con un alto dv/dt !!
-4 V Negative Rail output capacitance
<
No Miller turn-on!VgsVg_ls
Vg_hs
No shoot-through!Ids
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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Por qué un voltaje negativo para el ‘turn-off’?
Active Miller Clamp: Más fiabilidad de turn-off con un alto dv/dt
19
Active Miller Clamp Technique
• Durante la conmutación de apagado, el clamping
transistor es encendido.
• Conduce la corriente Miller a través de un camino de
muy baja impedancia (mucho menor que Zgs).
• Ayuda a reducir rizado AF y picos de voltaje negativos.
• Un voltaje unipolar (e.g. +18V, 0V) podría ser utilizado
incluso con un dv/dt moderadamente alto.
Ejemplo IC Gate Driver con active Miller Clamp:
• EiceDRIVER™ 1EDC20I12MH from Infineon
Technologies AG
Voltaje Unipolar con muy alto dv/dt en nodo SW. Puede ser necesario utilizar Active Miller Clamp !!
Ejemplo previo fue para el LS Switch, pero lo mismo sucede al HS switch en su conmutación turn-off !!!
𝐈𝐦𝐢𝐥𝐥𝐞𝐫
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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20
CMTI: Un parámetro crítico !
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CMTI: Un parámetro crítico !
Qué es CMTI y cómo afecta el sistema: Distorsión de señales de control
21
High-side Device: Nodo Surtidor conectadodirectamente al nodo SW (muy alto dv/dt)
Corriente de desplazamiento de modo comúnfluye al lado primario de la fuente dealimentación y del controlador, a través de lascapacitancias parásitas de ambos.
Resultado: Distorsión de señales de control !!
CMTI: Common-Mode Transient Immunity
Menor capacitancia parasitaria – CMTI más alto!!
Mayor robusez del sistema con alto dv/dt!
Medido en V/ns or kV/us
Máximo dv/dt tolerable a través de la barrera de aislamiento
galvánico antes de perder control del sistema !!
SW Node
Cdrv
Cpsu
Displacement Currents
across Isolation Barrier
ISOLATION
BARRIER
Isolated Auxiliary Supply
Gate Driver IC
Digital Isolator
High dv/dt across Isolation Barrier
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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CMTI: Un parámetro crítico !
Qué es CMTI y cómo afecta el sistema: EMI (Interferencia Electromagnética)
22
Envolvente del espectro de emisión depende del
tiempo de subida de dv/dt !!
Cpt: Total Isolation Barrier Capacitance (Gdrv + PSU)
Lcm: Common-mode Choke
Cy: Y-capacitor to Chassis/Earth
Menor Cpt, Mayor Impedancia CM, menor
corriente CM, menor rizado de voltaje en Cy !!
Ejemplo simplificado de acoplamiento de las corrientes de
modo común:
• Emisiones Conducidas
• Emisiones Radiadas
Minimizar Cpt para mejor rendimiento EMI y menor
requerimiento del filtro EMI de entrada !!
Square-waveform envelope
Freq
A(dB)
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23
La fuente de alimentación auxiliar aislada
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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La fuente de alimentación auxiliar aislada
Cuánta Potencia de Salida es necesaria?
24
Cuánta potencia?
Tanta como la potencia disipada en la resistencia total del lazo de corriente de puerta durante las
conmutaciones de encendido y apagado del SiC-MOSFET.
𝐏 = 𝐐𝐠 ∙ 𝐟𝐬𝐰 ∙ ∆𝐕𝐠𝐬
𝑸𝒈 = Carga de puerta para delta Vgs aplicado (hoja de datos)
𝒇𝒔𝒘 = Frequencia de conmutación
𝚫𝑽𝒈𝒔 = Puerta-surtidor delta de voltaje (Vgs_on − Vgs_off)
Eon =1
2∙ Qg ∙ ΔVgs
Eoff =1
2∙ Qg ∙ ΔVgs
ET = Eon + Eoff = Qg ∙ ΔVgs → P = ET ∙ fsw
No depende del valor de la resistencia del lazo
puerta!!
Recordar: Carga/Descarga de la capacitancia
total de puerta Cg. Energía en Condensador!
Energía
Encendido
Energía
Apagado
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La fuente de alimentación auxiliar aislada
Mayor requerimiento de potencia de salida
25
Mayor potencia se necesitará en los siguientes casos …
Frequencia de conmutación más alta (menor tamaño y
coste)
Módulos SiC customizados de muy alta potencia, con
alta capacitancia de puerta (e.g. inversores en
vehículos de tracción eléctrica)
Uso de SiC-MOSFETs en paralelo (corriente
compartida).
Fuente de alimentación compartida de los SiC-
MOSFETs del lado inferior en inversores multifásicos.
Ejemplo medio-puente SiC-MOSFETs en paralelo
Ga
te C
urr
ent L
oo
p Im
ped
an
ce m
ust
be s
am
e !!
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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La fuente de alimentación auxiliar aislada
Ejemplo: Cálculo de la potencia requerida
26
SiC-Module: CAS120M12BM2 (Wolfspeed)
Frecuencia de conmutación: 150 kHz
Von = +15𝑉Voff = −4𝑉
ΔVgs = 19𝑉
P = Qg ∙ fsw ∙ ∆Vgs
Qg: datasheet
Si se utiliza un ΔVgs distinto (e.g. +15V/-4V en este caso)
P = 280nC ∙ 150kHz ∙ 19V = 𝟏. 𝟔𝟐𝐖
Para el ΔVgs usado en el test:
𝟐𝟖𝟎 𝐧𝐂• Qg depende de condiciones de operación
• Punto inicial del diseño!! Validar experimentalmente
Test Conditions !
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La fuente de alimentación auxiliar aislada
Qué topología DC-DC? Varias opciones …
27
Convertidor Push-pull aislado Convertidor de medio-puente aislado
• Transformador muy pequeño
• Voltaje de entrada y ciclo de trabajo (D) fijos
• Voltaje de salida no regulado (lazo control abierto)
• Etapa de regulación de voltaje adicional
• Control más complejo (HS Switch)
• Transformador muy pequeño (e.g. MID-PPTI, MID-
PPMAX, MID-PPLT)
• Voltaje de entrada y ciclo de trabajo (D) fijos
• Voltaje de salida no regulado (lazo control abierto)
• Etapa de regulación de voltaje adicional (LDO, Zener, etc)
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La fuente de alimentación auxiliar aislada
Qué topología DC-DC? Varias opciones …
28
Isolated Primary-side-regulated
Flyback Converter (Dual-Output)
• Amplio rango de voltaje de entrada
• Voltaje de salida regulado
• Ningún bobinado adicional en el transformador
• Solución de pequeño tamaño y coste
Ejemplo de controladores PSR Flyback:
• LM5180 de Texas Instruments Inc
• LT83xx Series de Analog Devices / LT
… y los nuevos transformadores WE-AGDT
de Wurth Elektronik
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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29
La nueva serie de transformadores
WE-AGDT
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La nueva serie de transformadores WE-AGDT
Características principales de la serie WE-AGDT
30
Extremadamente compacto EP-7 (11x11x12 mm)
Capacitancia de interbobinado muy baja 6.8 pF
CMTI muy alto sobre 100 V/ns
4 kV Aislamiento dieléctrico
SMD Pick & Place
IEC62368-1 / IEC615582-16 Standards
AEC-Q200 Qualification (ongoing)
Para topología PSR Flyback hasta 6W
Voltajes de salida Unipolar and Bipolar
Optimizado para SiC-MOSFETs, pero…
…también excepcional para IGBT y Si Power MOSFET Gate Drivers
AEC-Q200
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
La nueva serie de transformadores WE-AGDT
WE-AGDT: Voltaje de salida bipolar
31
Ejemplo dispositivos/módulos SiCBipolar Output
15 V
4 VNTBG/NVHL/NVBG/NTHL
Series (OnSemi)
(+15V/-5V)
C3M and E3M Series
(Cree)
(+15V/-4V)
XM3/WAB Power Modules
(Cree)
(+15V/-4V)
FFx Series Power
(Infineon)
(+15V/-4V)
Ima
ge
s C
ourte
sy o
f ON
Se
mic
on
du
cto
r, Cre
e-
Wo
lfsp
ee
d a
nd
Infin
eo
n A
G
WE-AGDT
Part N
Diseños de Referencia
Vin Vout (+/-) Pmax Controller IC
750317894 9-18V +15V/-4V 3 W LM5180 (TI)
750318208 18-36V +15V/-4V 5 W LM5180 (TI)
750318131 9-18V +15V/-4V 6 W LT8302 (ADI)
VIN
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
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La nueva serie de transformadores WE-AGDT
WE-AGDT: Voltaje de salida unipolar
32
Unipolar Output
IMW/IMZ Series
(Infineon)
(+15-18V/0V)
Image Courtesy of Infineon Technologies AG
Ejemplo dispositivos/módulos SiC
WE-AGDT
Part N
Diseños de Referencia
Vin Vout (+/-) Pmax Controller IC
75031789 9-18V 15-20V/0V 3 W LM5180 (TI)
750318207 18-36V 15-20V/0V 5 W LM5180 (TI)
750318114 9-18V 15-20V/0V 6 W LT8302 (ADI)
Los diseños de Referencia se pueden editar fácilmente para
ajustar el voltaje de salida deseado entre +15V y +20V
15 V to 20 VVIN
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
La nueva serie de transformadores WE-AGDT
WE-AGDT – Nuevos Diseños de Referencia
33
Más Diseños de Referencia con distintos voltajes
de salida !!
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
34
Diseños de referencia para WE-AGDT
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Fuente de alimentación bipolar compacta de 6W para SiC e IGBT
35
Vin = 9-18V
Vout= +15V/-4V (Bipolar)
Pout = upto 6W
Eficiencia = 86% (pico), 83% (a 6W)
Muy compacta (14x14x27 mm)
Ligera (3.5g) (Automotive)
BoM Opciones: Standard y AEC-Q.
Dos Opciones para el PCB Layout:
2-layer Componentes en cara Top solo
4-layer Componentes en caras Top y Bottom
(versión mostrada en la imagen)
WE-AGDT - 750318131 1 Euro Coin
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Fuente de alimentación bipolar compacta de 6W para SiC e IGBT
36
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Fuente de alimentación bipolar compacta de 6W para SiC e IGBT
37
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Fuente de alimentación bipolar compacta de 6W para SiC e IGBT
38
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Fuente de alimentación bipolar compacta de 6W para SiC e IGBT
39
• PCB Layout Files Altium Designer disponibles
• PCB Fabrication Files
• Documentación detallada del Diseño de Referencia
• Application Note ANP082
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
40
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
41
High-side
Gate Driver
(for 2-paralleled
SiC-MOSFET)
Low-side
Gate Driver
(for 2-paralleled
SiC-MOSFET)
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
42
Bipolar Isolated
Auxiliary Supply
Reference Design
with WE-AGDT
750318131
(2-layer version)
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
43
Isolation Barrier
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
44
Digital Isolator
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Diseños de referencia para WE-AGDT
Ejemplo: Integración en sistema de controlador de puerta para SiC-MOSFET
45
HS Gate Driver IC
LS Gate Driver IC
ON and OFF
gate resistors
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
46
Applicaciones SiC: El Presente y el Futuro!
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Applicaciones SiC: El Presente y el Futuro!
Ejemplo de las aplicaciones principales al momento
47
E-mobility On-board & Off-board ChargersSolar Inverters
Industrial Drives Datacenter PowerSwitch-mode Power Supplies and
Power Factor Correction
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
48
Repaso de los puntos importantes
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
Repaso de los puntos importantes
49
• SiC-MOSFET posee superiores características y rendimiento que los dispositivos de Silicio.
• SiC-MOSFET conmuta más rápido: eficiencia más alta, pequeño tamaño y coste total del sistema
• Diseño sistema Gate Driver: Minimizar inductancia parásita y ajustar la resistencia de puerta.
• Un voltaje puerta-surtidor negativo ayuda a un apagado robusto y fiable del SiC-MOSFET
• Reducir Capacitancia parásita de la barrera de aislamiento para más alto CMTI y mejor EMI.
• Nuevos transformadores WE-AGDT de Wurth Elektronik para aplicaciones SiC e IGBT
• Capacitancia parásita muy pequeña para un alto CMTI (100V/ns) y potencia hasta 6W.
• Diseños de Referencia disponibles, fáciles de integrar en su sistema gate driver !
Würth Elektronik Group | 2020 | Public | SiC-MOSFET: Designing high-performance Gate Driver Systems with WE-AGDT Transformers
© All rights reserved by Wurth Electronik Group, also in the event of industrial property rights. All rights of disposal such as copying and redistribution rights with us. www.we-online.com
MUCHAS GRACIAS POR SU ATENCIÓN!!
EN ESTAREMOS ENCANTADOS DE
AYUDARLE!
NO DUDE EN ENVIAR SUS PREGUNTAS…
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