Samsung 128-layer V-NAND Memory CLICK TO EDIT MASTER …

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REVERSE COSTING® – STRUCTURAL, PROCESS AND COST REPORT

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22 bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr

Samsung’s 6th-generation 3D NAND TLC with 128 active wordlines in a single deck array with side peripheral logic.

SPR21584 - Memory report by Belinda DubePhysical analysis by Véronique Le Troadec

November 2021 – Sample

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT

Samsung 128-layer V-NAND Memory

Table of Contents

Overview / Introduction 4

o Executive Summary

o Reverse Costing Methodology

Company Profile 9

o Samsung Financials

o Samsung Products

o Samsung Location

o Samsung 3D NAND Memory

Physical Analysis 19

o Samsung 980 PRO SSD Overview 22

o Samsung 980 PRO SSD Teardown 25

o Memory Package 27

✓ Memory Package View & Dimensions

✓ Memory Package Cross-Section

✓ Memory Package Opening

o Memory Die 35

✓ Memory Die View & Dimensions

✓ Memory Die Cross-Section

✓ Memory Die Delayering

✓ Patents

Comparison 64-layer, 92-layer, 128-layer 66

✓ SSD Comparison

✓ Memory Package

✓ Memory Die Area and Density

✓ Memory Die Cross Section

✓ Memory CMOS Transistors

✓ Memory Cost

Memory Manufacturing Process 72

o Memory Die Front-End Process

o Memory Die Fabrication Unit

o Memory Manufacturing Process

o Packaging & Final Test

Cost Analysis 83

o Summary of the cost analysis 84

o Yields Explanation & Hypotheses 86

o Memory die 88

✓ Memory Die Front-End Cost

✓ Memory Die Probe Test, Thinning & Dicing

✓ Memory Die Wafer Cost

✓ Memory Die Cost

✓ Memory Packaging Cost

✓ Memory Component Cost

✓ Memory Cost per Gb

Selling price 99

Feedback 102

Related Analyses 104

System Plus Consulting Services 106

Overview / Introductiono Executive Summaryo Reverse Costing

Methodologyo Glossary

Company Profile & Supply Chain

Physical Analysis

Physical Comparison

Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

Related Analyses

About System Plus Consulting

Executive Summary

Samsung is a giant in the NAND market, dominating for several years. In 2020, the company was the world's top NAND flash maker with amarket share of 34%, followed by Japan's Kioxia Corp. with 21% and U.S. chipmaker Western Digital Corp. with 18%.

There is an explosive worldwide growth of data production causing the demand for high-performing, reliable non-volatile memory. NANDmemory providers are continuously pushing the limits of 3D stacking to provide improved storage density with each generation of 3DNAND memories.

Samsung’s vertical-NAND flash technology satisfies rising data demands by increasing the number of stacked layers. Vertical stacking ofmemory cells or wordlines creates a three-dimensional structure which overcomes the capacity limitations. Samsung first commercializedits 24-layered V-NAND in 2013 and today has reached 128 layers in its 6th-generation V-NAND. This 6th-generation design stacks a totalof 136-layer wordlines in a single tier. Meanwhile, NAND memory competitors are using a double-stack technology to develop their 3DNAND stacked memories, yet Samsung sticks to using a single stack which requires a more advanced etching technique and results in anincreased high-aspect ratio. The company’s sixth-generation V-NAND adds almost 40% more cells to the previous 92-layer 5th-generation V-NAND, resulting in an almost 25% chip area reduction.

This report presents a detailed study of Samsung’s latest 128-layer V-NAND using charge trap flash and triple-level cell NAND memorycells. The high-quality optical images and high-resolution scanning electron microscope (SEM) images are extracted to give physicaldetails of the package and die cross-sections, including material identification. Also included are process details to better understand themajor fabrication steps. Additionally, this report provides a cost estimation for producing the memory wafer with multiple wordlines, thedie cost, and the packaging cost.

Finally, this report features a comparison of Samsung’s previous-generation memories: this includes Gen 4 with 64 layers, Gen 5 with 92layers, and Gen 6 with 128 layers. This comparison summary comprises the package and die physical comparison, die density, wafer cost,and die cost. It also identifies the similar physical features and the evolution of Samsung’s V-NAND with each generation.

Overview / Introduction

Physical Analysis o Summaryo SSD Overviewo Package Assembly

o Views & Dimensionso Cross-Sectiono Opening

o Memory Dieo Views & Dimensionso Die Cross-sectiono Delayeringo Patents

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Summary of the Physical Analysis

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Package Cross Section

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Die Overview

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section – NAND Array and Metal layers

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section – NAND Array and Metal layers

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section – NAND Array Channel Hole

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section - Staircase

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section - Channel Hole Contacts

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section - Contacts

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Memory Cross-Section - Contacts

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Die Delayering– NAND Strings

Physical Comparison

Cost Analysis

Cost Comparison

Related Analyses

Die delayering – CMOS Transistors

P H Y S I C A LCOMPARISON

Physical Analysis

Physical Comparisono Package Comparisono Die Comparisono Die Cross Sectiono CMOS Transistorso Summary & Cost

Cost Analysis

Cost Comparison

Related Analyses

Die Comparison

Physical Analysis

Physical Comparisono Package Comparisono Die Comparisono Die Cross Sectiono CMOS Transistorso Summary & Cost

Cost Analysis

Cost Comparison

Related Analyses

Comparison – Memory Die

MANUFACTURINGPROCESS FLOW

Physical Analysis

Physical Comparison

Manufacturing Process Flowo Memory Die Front-End

Processo Memory Fabrication Unito Memory Die Process Stepso Final Test & Assembly Unit

Cost Analysis

Related Analyses

Channel Hole Formation

C O S TANALYSIS

Physical Analysis

Physical Comparison

Cost Analysiso Cost Analysis Summaryo Yields Explanation &

Hypotheseso NAND Memory Costo Packaging Costo Memory Component Costo Memory Cost per GB/Gb

Related Analyses

NAND Memory - Front-End Cost

Physical Analysis

Physical Comparison

Related Analyses

NAND Memory Steps Costs

Physical Analysis

Physical Comparison

Related Analyses

Memory Die Cost

Physical Analysis

Physical Comparison

Related Analyses

Component Cost

Physical Analysis

Physical Comparison

Related Analyses

Memory Cost per GB/Gb

Physical Analysis

Physical Comparison

Cost Analysis

Selling Price Analysiso Definitions of Priceo Component Price 256GB NAND

Related Analyses

Component Price 256GB

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

RELATED MONITORSRELATED REPORTS

By System Plus Consulting:• Intel 144-layer 3D NAND

Memory

• SK hynix 128-Layer NAND Memory

• YMTC’s 3D-NAND Flash Memory

By Yole Développement:• Memory Packaging 2021

• Status of the memory Industry 2021

• Equipment and Materials for 3D-NAND Manufacturing 2020

By Yole Développement:• NAND Quarterly Market

Monitor 2021

• DRAM Quarterly Market Monitor 2021

COMPANYSERVICES

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

About System Plus Consultingo Company serviceso Contact

A Structure, Process and Cost Analysis

Reverse Costing® consists of disassembling a device or a system in orderto identify its technology and discern its manufacturing processes andthen using in-house models and tools to determine its cost.

Our Core Activity : Reverse Costing®

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

Fields Of Expertise

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

Business Model

Teardown Track

205+ teardowns per

Monitor1 per year quarterly updated

Custom Analysis150 custom analyses per

Report60+ per year

Costing Tools

5 process-based and 3 parametric

costing tools

Cost MethodsTrainingOn demand

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

Worldwide Presence

100+ collaborators in 8 different countries

Headquarters› Nantes – System Plus Consulting› Lyon – Yole Développement

CorneliusRaleighPhoenix

Austin

Singapore

Hsinchu

TokyoShenzhen

Frankfurt

Nantes

Physical Analysis

Physical Comparison

Cost Analysis

Related Analyses

Contact

REPORTS, MONITORS & TRACKS

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sales@systemplus.fr - +33 2 40 18 09 16

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Samsung 128-layer V-NAND Memory CLICK TO EDIT MASTER …

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