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DS04-27801-1EFUJITSU SEMICONDUCTORDATA SHEET
ASSP For Power Management Applications (Mobile Phones)
Power Management ICfor GSM Mobile Phone
MB3891
DESCRIPTION
MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains allthe necessary functions to support all Digital, Analog and RF blocks in these phones. A Charge-pump includinga Logic Level Translation circuit is built in to support SIM-card (SmartCard) of both 3 and 5 Volt technology. Thecircuit contains a charger for a rechargeable Lithium coin cell of a Real Time Clock.
A complex control circuit is built in to generate main reset and to turn on and off the different LDO’s.
FEATURES• Supply voltage range : 3 V to 5.5 V• Low power consumption current during standby : 400 µA (MAX) • 6-channel low-saturation voltage type series regulator
: 2.1 V/2 channels, 2.8 V/3 channels, 2.5 V/2.8 V switch• Error prevention function during Low voltage• Power on reset function• 3 V/5 V SW for SIM-Card• SIM interface function• Backflow prevention function for Battery-Backup• Temperature prevention function
PACKAGE
64-pin plastic LQFP
(FPT-64P-M03)
MB3891
2
PIN ASSIGNMENT
(TOP VIEW)
(FPT-64P-M03)
N.C. : 49
N.C. : 50
SW2-OUTPUT : 51
SW2-INPUT : 52
SW1-ON : 53
SW2-ON : 54
SW3-ON : 55
CONT3 : 56
CONT5 : 57
OUT5 : 58
GND5 : 59
VBAT3 : 60
VBAT3 : 61
VBAT3 : 62
N.C. : 63
N.C. : 64
N.C
. : 1
N.C
. : 2
OU
T3
: 3
OU
T3
: 4
GN
D3
: 5
OU
T2
: 6
OU
T2
: 7
VB
AT
1 : 8
VB
AT
1 : 9
VB
AT
1 : 1
0
VB
AT
1 : 1
1
OU
T1
: 12
OU
T1
: 13
CO
NT
1 : 1
4
CO
NT
6 : 1
5
CO
NT
2 : 1
6
32 : GND-VSIM
31 : VCAP−
30 : VCAP+
29 : VSIMOUT
28 : OSC
27 : SIMPROG
26 : VSIM-ON
25 : VCC-VSIM
24 : REF-OUT
23 : VFIL
22 : VREF
21 : V-BACKUP
20 : VBAT2
19 : GND1
18 : DELAYCAP
17 : XPOWERGOOD
48 :
SW
3-IN
PU
T
47 :
SW
3-O
UT
PU
T
46 :
SW
1-IN
PU
T
45 :
SW
1-O
UT
PU
T
44 :
CO
NT
4
43 :
VB
AT
4
42 :
VB
AT
4
41 :
OU
T4
40 :
OU
T4
39 :
GN
D4
38 :
SIM
-IO
37 :
CLK
36 :
RS
T
35 :
µP-I
O
34 :
CLK
-IN
33 :
RE
SE
T-I
N
MB3891
PIN DESCRIPTION
(Continued)
Pin No. Symbol I/O Descriptions
1, 2 N.C. Non connection.
3, 4 OUT3 O LDO3 output pin.
5 GND3 LDO3 ground pin.
6, 7 OUT2 O LDO2 output pin.
8, 9, 10, 11 VBAT1 Battery voltage input pin for LDO1 and LDO2.
12, 13 OUT1 O LDO1 output pin.
14 CONT1 I Power on input from keypad (Active low, Pulled up to VBAT2).
15 CONT6 I “CONT6” input from digital system µP (Active high).
16 CONT2 I External accessory supply voltage Enable (Active high).
17 XPOWERGOOD O Generates the main reset. (Active low, when OUT1 is out of regulation).
18 DELAYCAP Timing capacitor for XPOWERGOOD delay.
19 GND1 LDO1, LDO2, V-BACKUP, Reference and System ground pin.
20 VBAT2 Battery voltage input pin for both UVLO’s, Reference and V-BACKUP LDO.
21 V-BACKUP O Supply voltage for Charger for rechargeable Lithium coin cell.
22 VREF O Supply voltage for Reference.
23 VFIL O Reference voltage Filter.
24 REF-OUT O Reference output voltage (Present when BACKUP UVLO is high).
25 VCC-VSIM Input voltage for charge pump. (Supplied by VBAT1).
26 VSIM-ON I VSIM supply Enable (Active high).
27 SIMPROG I VSIM programming: Low = 3 V SIM, High = 5 V SIM.
28 OSC Oscillator output pin.
29 VSIMOUT O Supply voltage for 3 or 5 V SIM-Card (SmartCard).
30 VCAP+ Positive side of boost capacitor.
31 VCAP− Negative side of boost capacitor.
32 GND-VSIM 3 or 5 V SIM-Card (SmartCard) ground pin.
33 RESET-IN I Non level shifted SIM reset (µP side).
34 CLK-IN I Non level shifted clock (µP side).
35 µP-IO I/O Non level shifted bi-directional data input/output (µP side).
36 RST O Level shifted SIM reset (SmartCard side).
37 CLK O Level shifted SIM clock (SmartCard side).
38 SIM-IO I/O Level shifted bi-directional SIM data input/output (SmartCard side).
39 GND4 LDO4 ground pin.
40, 41 OUT4 O LDO4 output pin.
3
MB3891
4
(Continued)Pin No. Symbol I/O Descriptions
42, 43 VBAT4 Supply voltage for LDO4.
44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V).
45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain).
46 SW1-INPUT I Input of general purpose switch number 1 (Source).
47 SW3-OUTPUT O Output of general purpose switch number 3 (Drain).
48 SW3-INPUT I Input of general purpose switch number 3 (Source).
49, 50 N.C. Non connection.
51 SW2-OUTPUT O Output of general purpose switch number 2 (Drain).
52 SW2-INPUT I Input of general purpose switch number 2 (Source).
53 SW1-ON I General purpose switch number 1 Enable (Active high).
54 SW2-ON I General purpose switch number 2 Enable (Active high).
55 SW3-ON I General purpose switch number 3 Enable (Active high).
56 CONT3 I OUT3 and OUT4 supply voltage Enable (Active high).
57 CONT5 I OUT5 supply voltage Enable (Active high).
58 OUT5 O Output terminal of LDO5.
59 GND5 LDO5 ground pin.
60, 61, 62 VBAT3 Supply voltage for LDO and LDO5.
63, 64 N.C. Non connection.
MB3891
BLOCK DIAGRAM
14
16
53
54
55
44
22
33
20 8 9 10 11
1213
17
18
1915
+
−
67
46
45
52
51
48
6061
4243
62
3
5
4
47
4041
39
21
34
35
36
37
38
27
28
26
CONT1
CONT6
CONT2
SW1-ON
SW2-ON
SW3-ON
CONT4
VREF
RESET-IN
CLK-IN
µP-IO
RST
CLK
SIM-IO
VSIM-ON
SIMPROG
OSC
VBAT2 VBAT1
OUT1
OUT2
SW1-INPUT
SW1-OUTPUT
SW2-INPUT
SW2-OUTPUT
SW3-INPUT
SW3-OUTPUT
VBAT3
OUT3
GND3
VBAT4
OUT4
GND4
V-BACKUP
XPOWERGOOD
DELAYCAP
GND1
PORMainUVLO
OverTemp
Protection
LDO1
LDO2
SW1
SW2
SW3
ONOUT
ONOUT
ONOUT
LDO3
ONOUT
LDO4
ON OUT
LDO5
ON OUT
LDO6
CONT4
BACKUPUVLO
VREFVREF-AMP
GSM/SIMLogicLevel
Translation
VSIMOUTCharge-pump
57CONT5
56CONT3
31 VCAP−
30 VCAP+
59 GND5
58 OUT5
24REF-OUT
23VFIL
25VCC-VSIM
29
VSIMOUT
32
GND-VSIMN.C.Pin : 1, 2, 49, 50, 63, 64
5
MB3891
6
ABSOLUTE MAXIMUM RATINGS
* : The packages are mounted on the dual-sided epoxy board(10 cm × 10 cm)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
WARNING: The recommended operating conditions are required in order to ensure the normal operation of thesemiconductor device. All of the device’s electrical characteristics are warranted when the device isoperated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operationoutside these ranges may adversely affect reliability and could result in device failure.No warranty is made with respect to uses, operating conditions, or combinations not represented onthe data sheet. Users considering application outside the listed conditions are advised to contact theirFUJITSU representatives beforehand.
Parameter Symbol ConditionsRating
UnitMin. Max.
Power supply voltageVBAT −0.3 7 V
VCC-VSIM −0.3 7 V
LDO regulator
IO OUT1 pin 120 mA
IO OUT2 pin 50 mA
IO OUT3 pin 100 mA
IO OUT4 pin 100 mA
IO OUT5 pin 50 mA
VSIMOUT chargepump IO VSIMOUT pin 10 mA
Power dissipation PD Ta ≤ +25 °C 800* mW
Storage temperature Tstg −55 +125 °C
Parameter Symbol ConditionsValue
UnitMin. Typ. Max.
Power supply voltageVBAT 3.0 3.6 5.5 V
VCC-VSIM 3.0 3.6 5.5 V
LDO capacitor guarantee value CO OUT1 to OUT5, V-BACKUP pin 0.8 1.0 µF
REF-OUT capacitor guarantee value
CO REF-OUT pin 0.027 µF
VSIMOUT capacitor guarantee value
CO VSIMOUT pin 10 µF
Operating ambient temperature Ta −20 +25 +85 °C
MB3891
ELECTRICAL CHARACTERISTICS (Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
* : Standard design value(Continued)
Parameter Symbol Pin No. ConditionsValue
UnitMin. Typ. Max.
General
Shutdown supply current
IBAT1
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
UVLO = “L”, BACKUP UVLO = “L”
80 µA
IBAT2
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
UVLO = “L”, BACKUP UVLO = “H”
160 µA
Standby supplycurrent
IBAT3
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
All circuit’s = On(No load)
400 µA
Operating ground current
IGND4, 5, 19, 32, 59
All circuit’s -VSIM = On Max. load on all regulators
10 mA
UVLO threshold voltage
VTHH
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
OUT1 = ON 2.980 3.080 3.180 V
VTHL
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
OUT1 = OFF 2.780 2.880 2.980 V
BACKUP UVLO threshold voltage
VTHH
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
V-BACKUP = ON 2.980 3.080 3.180 V
VTHL
8, 9, 10, 11, 20, 42, 43, 60, 61, 62
V-BACKUP = OFF 2.580 2.680 2.780 V
Input voltage
VIH 16, 56, 57 0.7 × OUT1
OUT1 V
VIL 16, 56, 57 0 0.3 × OUT1
V
VIH 14, 15, 44 0.7 × VBAT
VBAT V
VIL 14, 15, 44 0 0.3 × VBAT
V
VIH 26, 27 0.7 × VCC-VSIM
VCC-VSIM V
VIL 26, 27 0 0.3 × VCC-VSIM
V
Pull-up resistorRPU 17 15* kΩ
RPU 14, 57 200* kΩ
Pull-down resistor RPD 15, 53, 54, 55 200* kΩ
7
MB3891
8
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. Conditions
ValueUnit
Min. Typ. Max.
LDO1 (OUT1)
Output voltage VO 12, 13 −50 µA > OUT1 > −120 mA 2.000 2.100 2.200 V
Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V 10 mV
Load reguration Load 12, 13 −50 µA > OUT1 > −120 mA 30 mV
Ripple rejection∆VBAT1/∆OUT1
R.R 12, 13 f = 217 Hz 45 dB
Dropout voltage VDO 12, 13 OUT1 = −120 mA 500 mV
GND current at low load IGND 19 OUT1 > −1 mA 30 µA
GND current at max. load IGND 19 OUT1 = −120 mA 2 mA
Output noise volt. (RMS) VNOVL 12, 13f = 10 Hz to 1 MHz, OUT1 = 1 µF
500 µV
XPOWER-GOOD
(RESET)
Output voltage
VOH 17 0.8 × OUT1
OUT1 V
VOL 17 0 0.1 × OUT1
V
Hold time TXPG 17 DELAYCAP = 0.033 µF 10 25 40 ms
LDO2 (OUT2)
Output voltage VO 6, 7 −50 µA > OUT2 > −50 mA 2.700 2.800 2.900 V
Line regulation Line 6, 7 3.1 V < VBAT1 < 5.5 V 10 mV
Load regulation Load 6, 7 −50 µA > OUT2 > −50 mA 30 mV
Ripple rejection∆VBAT1/∆OUT2
R.R 6, 7 f = 217 Hz 45 dB
Dropout voltage VDO 6, 7 OUT2 = −50 mA 250 mV
GND current at low load IGND 19 OUT2 > −1 mA 30 µA
GND current at max. load IGND 19 OUT2 = −50 mA 1 mA
Output noise volt. (RMS) VNOVL 6, 7f = 10 Hz to 1 MHz, OUT2 = 1 µF
350 µV
General purpose switches
Input/Output resistance
RSW1 45, 46SW1-INPUT = 2.8 V(Gate/Source = 2.8 V)
4.0 Ω
RSW2 51, 52SW2-INPUT = 2.8 V(Gate/Source = 2.8 V)
7.0 Ω
RSW3 47, 48SW3-INPUT = 2.8 V(Gate/Source = 2.8 V)
7.0 Ω
MB3891
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. ConditionsValue
UnitMin. Typ. Max.
LDO3 (OUT3)
Output voltage VO 3, 4 −50 µA > OUT3 > −100 mA 2.700 2.800 2.900 V
Line regulation Line 3, 4 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 3, 4 −50 µA > OUT3 > −100 mA 30 mV
Ripple rejection∆VBAT3/∆OUT3
R.R 3, 4 f = 217 Hz 45 dB
Dropout voltage VDO 3, 4 OUT3 = −100 mA 250 mV
GND current at low load IGND 5 OUT3 > −1 mA 30 µA
GND current at max. load
IGND 5 OUT3 = −100 mA 2 mA
Output noise volt. (RMS) VNOVL 3, 4f = 10 Hz to 1 MHz, OUT3 = 1 µF
350 µV
LDO4 (OUT4)
Output voltage
VO 40, 41−50 µA > OUT4 > −100 mA, CONT4 = “L”
2.700 2.800 2.900 V
VO 40, 41−50 µA > OUT4 > −100 mA, CONT4 = “H”
2.400 2.500 2.600 V
Line regulation Line 40, 41 3.1 V < VBAT4 < 5.5 V 10 mV
Load regulation Load 40, 41 −50 µA > OUT4 > −100 mA 30 mV
Ripple rejection∆VBAT4 - OUT4/∆OUT4
R.R 40, 41 f = 217 Hz 45 dB
Dropout voltage VDO 40, 41 OUT4 = −100 mA 250 mV
GND current at low load IGND 39 OUT4 > −1 mA 30 µA
GND current at max. load
IGND 39 OUT4 = −100 mA 2 mA
Output noise volt. (RMS) VNOVL 40, 41f = 10 Hz to 1 MHz, OUT4 = 1 µF
500 µV
LDO5 (OUT5)
Output voltage VO 58 −50 µA > OUT5 > −50 mA 2.700 2.800 2.900 V
Line regulation Line 58 3.1 V < VBAT3 < 5.5 V 10 mV
Load regulation Load 58 −50 µA > OUT5 > −50 mA 30 mV
Ripple rejection∆VBAT3/∆OUT5
R.R 58 f = 217 Hz 45 dB
Dropout voltage VDO 58 OUT5 = −50 mA 250 mV
GND current at low load IGND 59 OUT5 > −500 µA 20 µA
GND current at max. load
IGND 59 OUT5 = −50 mA 1 mA
Output noise volt. (RMS) VNOVL 58f = 10 Hz to 1 MHz, OUT5 = 1 µF
350 µV
9
MB3891
10
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. ConditionsValue
UnitMin. Typ. Max.
LDO6 (V-BACKUP)
Output voltage VO 21−10 µA > V-BACKUP > −250 µA
2.000 2.100 2.200 V
Line regulation Line 21 3.1 V < VBAT2 < 5.5 V 10 mV
Load regulation Load 21−10 µA > V-BACKUP > −250 µA
30 mV
Ripple rejection∆VBAT2/∆V-BACKUP
R.R 21 f = 217 Hz 25 dB
GND current at low load
IGND 19 V-BACKUP > −10 µA 10 µA
GND current at max. load
IGND 19 V-BACKUP = −250 µA 50 µA
Output noise volt. (RMS)
VNOVL 21f = 10 Hz to 1 MHz, V-BACKUP = 1 µF
500 µV
Reverse current IRC 21VBAT2 = 0 V, V-BACKUP = 3.0 V
100 nA
REF-OUT
Output voltage VO 24 0 µA > REF-OUT > −50 µA 1.200 1.225 1.250 V
Line regulation Line 24 3.1 V < VBAT2 < 5.5 V 10 mV
Load regulation Load 24 0 µA > REF-OUT > −50 µA 6 mV
Ripple rejection∆VBAT2/∆REF-OUT
R.R 24 f = 217 Hz 50 dB
Output noise volt. (RMS)
VNOVL 24f = 10 Hz to 1 MHz, REF-OUT = 27 nF
250 µV
VSIMOUT chargepump
Output voltage
VO 29−50 µA > VSIMOUT > −10 mA, SIMPROG = “H”
4.600 5.000 5.400 V
VO 29−50 µA > VSIMOUT > −10 mA, SIMPROG = “L”
2.760 3.000 3.240 V
Line regulation Line 29 3.1 V < VCC-VSIM < 5.5 V 50 mV
Load regulation Load 29 −50 µA > VSIMOUT > −10 mA 100 mV
MB3891
(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
(Continued)
Parameter Symbol Pin No. ConditionsValue
UnitMin. Typ. Max.
VSIMOUT chargepump
Ripple rejection∆VCC-VSIM/∆VSIMOUT
R.R 29 f = 217 Hz 30 dB
Output current
IO 293.1 V < VCC-VSIM < 5.5 V, VSIMOUT = 5 V
10 mA
IO 293.1 V < VCC-VSIM < 5.5 V, VSIMOUT = 3 V
6 mA
GND current at no load
IGND 32 VSIMOUT > −50 µA 100 µA
Efficiency at max. load
η 25, 29VSIMOUT = −10 mA, VSIMOUT = 5 V
85 %
Output ripple voltage
VRP 29f = 10 Hz to 1 MHz, VSIMOUT = 10 µF
100 mVPP
Shutdown sup-ply current
ILDO 25 VSIM-ON = “L” 100 nA
GSM/SIM logic level translation
µp interface
Input voltage
VIH33, 34,
35 0.7 ×
OUT1 OUT1 V
VIL33, 34,
35 0 0.3 ×
OUT1V
Output voltage
VOH 35 µP-IO (max.) = −20 µA0.8 × OUT1
OUT1 V
VOL 35 µP-IO (max.) = 1 mA 0 0.2 × OUT1
V
11
MB3891
12
(Continued) (Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)
Parameter Symbol Pin No. ConditionsValue
UnitMin. Typ. Max.
SIMinterface
5 V (SIMPROG
= H)
Output voltageVOH 36 RST (max.) = −20 µA
VSIMOUT − 0.7
VSIMOUT V
VOL 36 RST (max.) = 200 µA 0 0.6 V
Rise time TR 36 RESET-IN = RST = 30 pF 400 µs
Fall time TF 36 RESET-IN = RST = 30 pF 400 µs
Output voltageVOH 37 CLK (max.) = −20 µA
0.7 × VSIMOUT
VSIMOUT V
VOL 37 CLK (max.) = 200 µA 0 0.5 V
Rise time TR 37 CLK-IN = CLK = 30 pF 27 ns
Fall time TF 37 CLK-IN = CLK = 30 pF 27 ns
Output voltageVOH 38 SIM-IO (max.) = −20 µA 3.8 VSIMOUT V
VOL 38 SIM-IO (max.) = 1 mA 0 0.4 V
Input voltageVIH 38 0.7 ×
VSIMOUT VSIMOUT V
VIL 38 0 0.8 V
Rise time TR 38 SIM-IO = 30 pF 1 µs
Fall time TF 38 SIM-IO = 30 pF 1 µs
SIMinterface
3 V (SIMPROG
= L)
Output voltage
VOH 36 RST (max.) = −20 µA0.8 ×
VSIMOUT VSIMOUT V
VOL 36 RST (max.) = 200 µA 0 0.2 × VSIMOUT
V
Rise time TR 36 RESET-IN = RST = 30 pF 400 µs
Fall time TF 36 RESET-IN = RST = 30 pF 400 µs
Output voltage
VOH 37 CLK (max.) = −20 µA0.7 ×
VSIMOUT VSIMOUT V
VOL 37 CLK (max.) = 200 µA 0 0.2 × VSIMOUT
V
Rise time TR 37 CLK-IN = CLK = 30 pF 50 ns
Fall time TF 37 CLK-IN = CLK = 30 pF 50 ns
Output voltageVOH 38 SIM-IO (max.) = −20 µA
0.7 × VSIMOUT
VSIMOUT V
VOL 38 SIM-IO (max.) = 1 mA 0 0.4 V
Input voltage
VIH 38 0.7 × VSIMOUT
VSIMOUT V
VIL 38 0 0.2 × VSIMOUT
V
Rise time TR 38 SIM-IO = 30 pF 1 µs
Fall time TF 38 SIM-IO = 30 pF 1 µs
MB3891
TYPICAL CHARACTERISTICS
(Continued)
400
350
300
250
200
150
100
50
00 1 2 3 4 5
Ta = +25 °CCONT1 = “L”CONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = OPENVSIM-ON = “H”SIMPROG = “H” OUT1 = No load
OUT2 = No loadOUT3 = No loadOUT4 = No loadOUT5 = No load
V-BACKUP = No loadVSIMOUT = No load
350
300
250
200
150
100
50
00 1 2 3 4 5
Ta = +25 °CCONT1 = OPENCONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = “H”VSIM-ON = “H”SIMPROG = “H”
OUT1 = No loadOUT2 = No loadOUT3 = No loadOUT4 = No loadOUT5 = No load
V-BACKUP = No loadVSIMOUT = No load
450
400
350
300
250
200
150
100
50
0
450
400
350
300
250
200
150
100
50
00 1 2 3 4 5
Ta = +25 °CCONT1 = OPENCONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = “H”VSIM-ON = “H”SIMPROG = “H”
OUT1 = 18 ΩOUT2 = 56 ΩOUT3 = 28 ΩOUT4 = 28 ΩOUT5 = 56 Ω
V-BACKUP = 8.4 kΩVSIMOUT = 510 Ω
IBAT
IGND
3.0
2.5
2.0
1.5
1.0
0.5
0.00 1 2 3 4 5 6 7
Ta = +25 °COUT1 = 1 µFCONT1 = OPENCONT6 = “H”
3.0
2.5
2.0
1.5
1.0
0.5
0.00 1 2 3 4 5
Ta = +25 °COUT1 = 1 µFCONT1 = “L”CONT6 = OPEN
2.2
2.1
2.0
1.9
1.8
1.70 −100 −200 −300 −500−400 −600 −700 −800
Ta = +25 °CVBAT = 3.6 VCONT1 = “L”CONT6 = OPEN
Pow
er s
uppl
y cu
rren
t IB
AT (
µA)
Pow
er s
uppl
y cu
rren
t IB
AT (
µA)
Power supply current vs. power supply voltage Power supply current vs. power supply voltage
Power supply voltage VBAT (V) Power supply voltage VBAT (V)
Output voltage vs. power supply voltage (LDO1)
Pow
er s
uppl
y cu
rren
t IB
AT (
mA
)
Power supply voltage VBAT (V)
Out
put v
olta
ge V
OU
T1
(V)
Power supply current , GND current vs. power supply voltage
Power supply voltage VBAT (V)
Out
put v
olta
ge V
OU
T1
(V)
Output voltage vs. load current (LDO1)
Load current ILOAD (mA)
GN
D c
urre
nt IG
ND (
µA)
Out
put v
olta
ge V
OU
T1
(V)
Power supply voltage VBAT (V)
Output voltage vs. power supply voltage (LDO1)
13
MB3891
14
0
−20
−40
−60
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = 3.6 VOUT1 = 1 µFOUT1 = 18 ΩCONT1 = “L”CONT6 = OPEN
0
−20
−40
−60
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = 3.6 VOUT1 = 1 µFCONT1 = “L”CONT6 = OPEN
0.6
0.5
0.4
0.3
0.2
0.1
0.00 −50 −100 −150 −200
VBAT = 2.1 VCONT1 = OPENCONT6 = “H”
Ta = +85 °C
Ta = −20 °C
Ta = +25 °C
2.13
2.12
2.11
2.10
2.09
2.08−40 −20 0 20 40 60 80 100
VBAT = 3.6 VCONT1 = OPENCONT6 = “H”
10
5
0
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
OUT1
VBAT
Ta = +25°COUT1 = 18 ΩCONT1 = “L”CONT6 = OPEN
Ripple rejection vs. frequency (LDO1) Ripple rejection vs. frequency (LDO1)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Frequency f (Hz) Frequency f (Hz)
Dropout voltage vs. load current (LDO1)
Dro
pout
vol
tage
VD
O (
V)
Load current ILOAD (mA)
Output voltage vs. ambient temperature (LDO1)
Out
put v
olta
ge V
OU
T1
(V)
Ambient temperature Ta ( °C)
Output voltage rising waveforms (LDO1)
Pow
er s
uppl
y vo
ltage
VB
AT
t (ms)
Out
put v
olta
ge V
OU
T1
(V)
MB3891
(Continued)
4
3
2
1
0 2
1
0
0 50 100 150 200 250 300 350 400 450 500
Ta = +25°COUT1 = No loadCONT1 = “L”CONT6 = OPEN
VBAT
OUT1
4
2
0
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
OUT1
VBAT
Ta = +25°CVBAT = 1 µFOUT1 = No loadCONT1 = “L”CONT6 = OPEN
4
2
0
2
1
0
0 20 40 60 80 100 120 140 160 180 200
OUT1
CONT1
Ta = +25°CVBAT = 3.6 VOUT1 = 18 ΩCONT6 = OPEN
10
5
0
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 160 180 200
CONT1
OUT1
Ta = +25°CVBAT = 3.6 VOUT1 = No loadCONT6 = OPEN
2.0
1.5
1.0
0.5
0.0
2
1
0
0 10 20 30 40 50 60 70 80 90 100
OUT1
VC
OUT1 = 0 A −120 mA
Ta = +25°CVBAT = 3.6 VCONT1 = “L”
CONT6 = OPEN
VBAT = 3.6 V
VREF = 1.225 V
LDO1 OUT1
1 µF
120 mA
4 V0 V
VC
Output voltage falling waveforms (LDO1) Output voltage falling waveforms (LDO1)
Waveform at rapid change of output load (LDO1)
Out
put v
olta
ge V
OU
T1
(V)
t (µs)
NP
N c
olle
ctor
vol
tage
VC (
V)
Pow
er s
uppl
y vo
ltage
VB
AT (V
)
t (ms) O
utpu
t vol
tage
VO
UT
1 (V
) t (s)
Output voltage rising waveforms (LDO1)
Inpu
t vol
tage
VC
ON
T1 (
V)
t (µs)
Out
put v
olta
ge V
OU
T1
(V)
Output voltage falling waveforms (LDO1)
t (ms)
[Measurement diagram]
(IC internal)
Pow
er s
uppl
y vo
ltage
VB
AT (V
)
Out
put v
olta
ge V
OU
T1
(V)
Inpu
t vol
tage
VC
ON
T1
(V)
Out
put v
olta
ge V
OU
T1
(V)
15
MB3891
16
(Continued)
2.0
1.5
1.0
0.5
0.0
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
OUT1 = −120 mA 0 A
VC
OUT1
Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT6 = OPEN
VBAT = 3.6 V
VREF = 1.225 V
LDO1 OUT1
1 µF
120 mA
4 V0 V
VC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
2
1
0
OUT2
VC
0 10 20 30 40 50 60 70 80 90 100
OUT2 = 0 A −50 mA
Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT2 = “H”CONT6 = OPEN
VBAT = 3.6 V
VREF = 1.225 V
LDO2 OUT2
1 µF
50 mA
4 V0 V
VC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
OUT2
VC
OUT2 = −50 mA 0 A
Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT2 = “H”CONT6 = OPEN
VBAT = 3.6 V
VREF = 1.225 V
LDO2 OUT2
1 µF
50 mA
4 V0 V
VC
Waveform at rapid change of output load (LDO1)
Out
put v
olta
ge V
OU
T1
(V)
t (ms) N
PN
Col
lect
or v
olta
ge V
C (V
)
[Measurement diagram]
(IC internal)
Waveform at rapid change of output load (LDO2)
Out
put v
olta
ge V
OU
T2
(V)
t (µs)
NP
N C
olle
ctor
vol
tage
VC (V
)
[Measurement diagram]
(IC internal)
Waveform at rapid change of output load (LDO2)
Out
put v
olta
ge V
OU
T2
(V)
t (ms)
NP
N C
olle
ctor
vol
tage
VC (V
)
[Measurement diagram]
(IC internal)
MB3891
(Continued)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.00 1 2 3 4 5 6 7
Ta = +25 °CVFIL = 0.1 µF
1.24
1.23
1.22
1.21
1.20
1.19−40 −20 0 20 40 60 80 100
VBAT = 3.6 V
Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”SIMPROG = “H”
VSIMOUT = 510 Ω
VSIMOUT = No load
100000
10000
1000
100
10
10 1 2 3 4 5
Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”SIMPROG = “L”
100000
10000
1000
100
10
10 1 2 3 4 5
VSIMOUT = 510 Ω
VSIMOUT = No load
Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”
SIMPROG = “H”VSIMOUT = No load
SIMPROG = “L”VSIMOUT = No load
5
4
3
2
1
00 1 2 3 4 5 6 7
Ref
eren
ce v
olta
ge V
FIL (
V)
Ref
eren
ce v
olta
ge V
FIL (
V)
Reference voltage vs. power supply voltage Reference voltage vs. ambient temperature
Power supply voltage VBAT (V) Ambient temperature Ta ( °C)
Output voltage vs. power supply voltage (VSIMOUT Chargepump)
Pow
er s
uppl
y cu
rren
t IC
C-V
SIM
(µA
)
Power supply voltage VCC-VSIM (V)
Out
put v
olta
ge V
SIM
OU
T (
V)
Power supply current vs. power supply voltage (VSIMOUT Chargepump)
Power supply voltage VCC-VSIM (V)
Pow
er s
uppl
y cu
rren
t IC
C-V
SIM
(µA
)
Power supply voltage VCC-VSIM (V)
Power supply current vs. power supply voltage (VSIMOUT Chargepump)
17
MB3891
18
(Continued)
3.00
2.99
2.98
2.97
2.96
2.95
2.94
2.93
2.92
2.91
2.900 −5 −10 −15 −20
VCC-VISM = 5.5 V
VCC-VISM = 3.1 V
VCC-VISM = 3.6 V
Ta = +25 °CVSIM-ON = “H”SIMPROG = “L”
5.00
4.95
4.90
4.85
4.80
4.75
4.70
4.65
4.600 −5 −10 −15 −20
VCC-VISM = 5.5 V
VCC-VISM = 3.1 V VCC-VISM = 3.6 V
Ta = +25 °CVSIM-ON = “H”SIMPROG = “H”
0
−20
−40
−60
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µFVSIMOUT = 510 Ω
0
−20
−40
−60
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µF
0
−20
−40
−60
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µFVSIMOUT = 510 Ω
0
−20
−30
−40
−80
−10010 100 1 k 10 k 100 k 1 M
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µF
Out
put v
olta
ge V
SIM
OU
T (
V)
Out
put v
olta
ge V
SIM
OU
T (
V)
Output voltage vs. load current (VSIMOUT Chargepump)
Output voltage vs. load current (VSIMOUT Chargepump)
Load current ILOAD (mA) Load current ILOAD (mA)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Frequency f (Hz)
Ripple rejection vs. frequency (VSIMOUT Chargepump)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Frequency f (Hz)
Ripple rejection vs. frequency (VSIMOUT Chargepump)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Frequency f (Hz)
Ripple rejection vs. frequency (VSIMOUT Chargepump)
Rip
ple
reje
ctio
n R
.R (
dBm
)
Frequency f (Hz)
Ripple rejection vs. frequency (VSIMOUT Chargepump)
MB3891
(Continued)
100
90
80
70
60
50
40
30
20
10
03.0 3.5 4.0 4.5 5.0 5.5
Ta = +25 °CVSIM-ON = “H”SIMPROG = “L”
ILOAD = −10 mA
ILOAD = −1 mA
100
90
80
70
60
50
40
30
20
10
03.0 3.5 4.0 4.5 5.0 5.5
ILOAD = −10 mA
ILOAD = −1 mA
Ta = +25 °CVSIM-ON = “H”SIMPROG = “H”
100
90
80
70
60
50
40
30
20
10
00 −5 −10 −15 −20
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”
VCC-VSIM = 5.5 V
VCC-VSIM = 3.6 V
VCC-VSIM = 3.1 V
100
90
80
70
60
50
40
30
20
10
00 −5 −10 −15 −20
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”
VCC-VSIM = 3.1 V
VCC-VSIM = 3.6 V
VCC-VSIM = 5.5 V
0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0
10
5
0 5
4
3
2
1
0
VSIM-ON
VSIMOUT
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “H”VSIMOUT = 510 Ω
0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0
10
5
0
3
2
1
0
VSIM-ON
VSIMOUT
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “L”VSIMOUT = 510 Ω
Effi
cien
cy η
(%
)
Effi
cien
cy η
(%
)
Efficiency vs. power supply voltage (VSIMOUT Chargepump)
Efficiency vs. power supply voltage (VSIMOUT Chargepump)
Power supply voltage VCC-VSIM (V) Power supply voltage VCC-VSIM (V)
Effi
cien
cy η
(%
)
Load current ILOAD (mA)
Efficiency vs. load current (VSIMOUT Chargepump)
Effi
cien
cy η
(%
)
Load current ILOAD (mA)
Efficiency vs. load current (VSIMOUT Chargepump)
Inpu
t vol
tage
VS
IM-O
N (V
)
t (ms)
Output voltage rising waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
V)
t (ms)
Output voltage rising waveforms (VSIMOUT Chargepump)
Inpu
t vol
tage
VS
IM-O
N (V
)
Out
put v
olta
ge V
SIM
OU
T (
V)
19
MB3891
20
(Continued)
SIMPROG
VSIMOUT
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIMOUT = 510 ΩVSIM-ON = “H”
0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0
10
5
0 5
4
3
2
1
0
SIMPROG
VSIMOUT
Ta = +25 °CVBAT = VCC-SIM = 3.6 VVSIMOUT = 510 ΩVSIM-ON = “H”
0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0
10
5
0 5
4
3
2
1
0
0 5 15 20 25 30 35 40 45 5010
10
5
0 5
4
3
2
1
0
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “H”VSIMOUT = 510 Ω
VSIM-ON
VSIMOUT
0 5 15 20 25 30 35 40 45 5010
10
5
0
3
2
1
0
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “L”VSIMOUT = 510 Ω
VSIM-ON
VSIMOUT
0 2 6 8 10 12 14 16 18 204
40
20
0
−20
−40
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = No loadAC COUPLED
0 2 6 8 10 12 14 16 18 204
20
0
−20
Ta = +25 °CVBAT = VCC-SIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = No loadAC COUPLED
Out
put v
olta
ge V
SIM
OU
T (
mV
)
t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
mV
)
t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Inpu
t vol
tage
VS
IMP
RO
G (
V)
t (ms)
Output voltage rising waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
V)
t (ms)
Output voltage falling waveforms (VSIMOUT Chargepump)
Inpu
t vol
tage
VS
IM-O
N (
V)
t (ms)
Output voltage falling waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
V)
t (ms)
Output voltage falling waveforms (VSIMOUT Chargepump)
Inpu
t vol
tage
VS
IMP
RO
G (
V)
Out
put v
olta
ge V
SIM
OU
T (
V)
Inpu
t vol
tage
VS
IM-O
N (
V)
Out
put v
olta
ge V
SIM
OU
T (
V)
MB3891
(Continued)
5
4
3
2
1
00.0 0.5 1.0 1.5 2.0 2.5
SIMPROG = "H"
SIMPROG = "L"
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = "H"CONT1 = "L"CONT6 = OPEN
2.5
2.0
1.5
1.0
0.5
0.00 1 2 3 4 5
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L” or “H”CONT1 = “L”CONT6 = OPEN
40
20
0
−20
−40
0 2 4 6 8 10 14 16 18 2012
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = 510 ΩAC COUPLED
20
0
−20
0 2 4 6 8 10 12 14 16 18 20
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = 5.1 kΩAC COUPLED
0 2 4 6 8 10 12 14 16 18 20
40
20
0
−20
−40
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = 510 ΩAC COUPLED
60
40
20
0
−20
−40
−60
0 2 4 6 8 10 12 14 16 18 20
Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = 5.1 kΩAC COUPLED
Out
put v
olta
ge V
SIM
IO (
V)
Input voltage VUPIO (V)
Output voltage vs. input voltage (SIM Inter-
Out
put v
olta
ge V
SIM
OU
T (
mV
)
t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
mV
) t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
mV
)
t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
SIM
OU
T (
mV
)
t (µs)
Output voltage waveforms (VSIMOUT Chargepump)
Out
put v
olta
ge V
UP
IO (
V)
Input voltage VSIMIO (V)
Output voltage vs. input voltage (SIM Interface)
21
MB3891
22
(Continued)
3.10
3.05
3.00
2.95
2.90
2.85
2.80−40 −20 0 20 40 60 80 100
VBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”
5.00
4.95
4.90
4.85
4.80
4.75
4.70−40 −20 0 20 40 60 80 100
VBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”
1000
800
600
400
200
0−40 −20 200 40 60 80 100
Out
put v
olta
ge V
SIM
OU
T (
V)
Ambient temperature Ta ( °C)
Output voltage vs. ambient temperature (SIM Interface)
Pow
er d
issi
patio
n P
D (
mW
)
Ambient temperature Ta ( °C)
Power dissipation vs. ambient temperature
Out
put v
olta
ge V
SIM
OU
T (
V)
Ambient temperature Ta ( °C)
Output voltage vs. ambient temperature (SIM Interface)
MB3891
FUNCTIONAL DESCRIPTION (1) MAIN UVLO/BACKUP UVLO
Transient power-on surge states or sudden drops in supply voltage (VBAT2) can cause an IC to operate abnor-mally, leading to destruction or damage to system elements. To prevent this type of fault, the undervoltage lockoutcircuits (UVLO/ Backup UVLO) will shut off the output from OUT1 to V-BACKUP if the supply voltage falls belowthe UVLO circuit threshold voltage (3.0 V/2.8 V typ.). System operation is restored as soon as the supply voltagerises above the UVLO circuits threshold voltage (3.2 V typ.).
(2) LDO1
The LDO1 circuits uses the reference voltage supply and generates an output voltage (2.1 V typ.) at the OUT1terminal (pin 12,13). Power can be drawn from the OUT1 terminal for external use, up to a maximum load currentof 120 mA.
(3) XPOWERGOOD (RESET)
When the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), after a delay interval set by a capacitor(CDELAYCAP) connected to the DELAYCAP terminal (pin 18), the XPOWERGOOD terminal (pin 17) goes to “H”level and resets the microcomputer. At the same time, the LDO2, LDO3, and LDO4 output is controlled ON/OFF.
(4) LDO2
The LDO2 circuit uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT2terminal (pin 6,7) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT2 terminal (pin 16). Power can be drawn from the OUT2 terminal for external use, up to amaximum load current of 50 mA.
(5) General Purpose switches
Any of the OUT terminals can be connected to any SW-INPUT terminal so that when the corresponding SW-ON terminal is at “H” level, the OUT terminal voltage can be drawn from the associated SW-OUTPUT terminal.
(6) LDO3
The LDO3 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT3terminal (pin 3,4) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT3 terminal (pin 56). Power can be drawn from the OUT3 terminal for external use, up to amaximum load current of 100 mA.
(7) LDO4
The LDO4 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT4terminal (pin 40,41) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT3 terminal (pin 56) , and an “L” level signal is input at the CONT4 terminal (pin 44). When an“H” level signal is input at the CONT4 terminal, the output voltage at the OUT4 terminal is 2.5 V (typ.). Powercan be drawn from the OUT4 terminal for external use, up to a maximum load current of 100 mA.
23
MB3891
24
(8) LDO5
The LDO5 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT5terminal (pin 57) when the OUT1 terminal (pin 12,13) is in output state and an “H” level signal is input at theCONT5 terminal (pin 57). Power can be drawn from the OUT5 terminal for external use, up to a maximum loadcurrent of 50 mA.
(9) LDO6
The LDO6 circuit uses the reference voltage supply and generates an output voltage (2.1 V typ.) at the V-BACKUPterminal (pin 21). Power can be drawn for external use, from the V-BACKUP terminal, up to a maximum loadcurrent of 250 µA.
(10) REF-OUT
This circuit uses the reference voltage generated by the reference voltage block (1.225 V typ.) to produce atemperature compensated reference voltage (1.225 V typ.) at the REF-OUT terminal(pin 24) by means of avoltage follower. The reference voltage can also be drawn from the REF-OUT terminal for external use, up to aload current of 50 µA.
(11) VSIMOUT Chargepump
The VSIMOUT charge pump uses the voltage from the battery and generates 5.0 V (typ.) voltage at the VSIMOUTterminal (pin 29) when an “H” level signal is input at the SIMPROG terminal (pin 27) , or 3.0 V (typ.) voltagewhen an “L” level signal input at the SIMPROG terminal. This voltage can also be drawn from the VSIMOUTterminal for external use, up to a load current of 10 mA.
(12) GSM/SIM Logic Translation µP Interface
When a signal is input from the microprocessor to the RESET-IN terminal(pin 33) and CLK-IN terminal (pin 34),a level-shifted voltage is output from the RST terminal (pin 36) and CLK terminal (pin 37) to the SIM card. TheµP-IO terminal (pin 35) and SIM-IO terminal (pin 38) are input/output pins and carry signals between themicroprocessor and SIM card.
(13) SIM Interface 5 V (SIMPROG = “H”)
When an “H” level signal is input to the SIMPROG terminal (pin 27), 5.0 V (typ.) voltage is generated from theVSIMOUT terminal (pin 29) as a power supply for the SIM card.
(14) SIM Interface 3 V (SIMPROG = “L”)
When an “L” level signal is input to the SIMPROG terminal (pin 27), 3.0 V (typ.) voltage is generated from theVSIMOUT terminal (pin 29) as a power supply for the SIM card.
SETTING THE XPOWERGOOD TIMEWhen the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), the capacitor (CDELAYCAP) connected to theDELAYCAP terminal (pin 18) starts charging, the XPOWERGOOD terminal (pin 17) voltage rises. The XPOW-ERGOOD terminal voltage rising time (XPOWERGOOD time) can be set by a capacitor connected to theDELAYCAP terminal.
XPOWERGOOD time : TXPG (s) := 0.8 × CDELAYCAP (µF)
MB3891
OPERATION TIMING CHART
VBAT1 to VBAT4,VCC-VSIM
CONT1
CONT6
CONT5
CONT2
CONT3
SW1-ON
VSIM-ON
SIMPROG
REF-OUT
OUT6
OUT1
XPOWERGOOD
OUT5
OUT2
OUT3 (OUT4)
SW1-OUTPUT
VSIMOUT
SW2-OUTPUT(SW3-OUTPUT)
SW2-ON (SW3-ON)
delay
2.0 V
VSIMOUT = 5 VVSIMOUT = 3 V
(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17)
Input
Output
(1) : Battery controlled (5) : OUT1 hold(2) : BACKUP UVLO ON (6) to (12) : µP controlled(3) : phone turned on (14) : Main UVLO off(4) : XPOWERGOOD on (16) : BACKUP UVLO off
25
MB3891
26
APPLICATION EXAMPLE
C11 µF
C121 µF
C111 µF
C20.033 µF
C31 µF
C41 µF
C51 µF
C61 µF
C71 µF
C80.1 µF
C100.1 µF
C910 µF
C131 µF
C141 µF
µP
SIM
KEYPAD
R1200 kΩ
R2200 kΩ
R3200 kΩ
R4200 kΩ
R5200 kΩ
14
8 9 10 11
15
16
54
53
55
1213
17
18
19
67
52
51
48
47
606162
34
5
46
45
58
59
4243
4041
39
21
CONT1
CONT6
CONT2
SW1-ON
SW2-ON
SW3-ON
CONT3
CONT5
CONT4
VREF
VFIL
REF-OUT
VSIM-ON
SIMPROG
RESET-IN
CLK-IN
µP-IO
VCC-VSIM
OSC
VSIMOUT
VCAP+
VCAP−
RST
CLK
SIM-IO
GND-VSIM
XPOWERGOOD
DELAYCAP
GND1
OUT2
SW2-INPUT
SW2-OUTPUT
SW3-INPUT
SW3-OUTPUT
VBAT3
OUT3
GND3
OUT5
GND5
VBAT4
OUT4
GND4
V-BACKUP
SW1-INPUT
SW1-OUTPUT
OUT1
VBAT1VBAT2
56
57
44
22
23
24
26
27
33
34
35
25
28
29
30
31
36
37
38
32
20
N.C.Pin : 1, 2, 49, 50, 63, 64
MB3891
USAGE PRECAUTIONS• Printed circuit board ground lines should be set up with consideration for common impedance.
• Take appropriate static electricity measures.• Containers for semiconductor materials should have anti-static protection or be made of conductive material.• After mounting, printed circuit boards should be stored and shipped in conductive bags or Containers.• Work platforms, tools, and instruments should be properly grounded.• Working personal should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
• Do not apply negative voltages
The use of negative voltages below -0.3V may create parasitic transistors on LSI lines, Which can cause abnormaloperation.
ORDERING INFORMATION
Part number Package Remarks
MB3891PFV64-pin Plastic LQFP
(FPT-64P-M03)
27
MB3891
PACKAGE DIMENSION
64-pin plastic LQFP (FPT-64P-M03)
Note : Pins width and pins thickness include plating thickness.
Dimensions in mm (inches) .
C 1998 FUJITSU LIMITED F64009S-3C-6
"A"
33
32
17
161
64
49
48
INDEX
12.00±0.20(.472±.008)SQ
10.00±0.10(.394±.004)SQ
0.50±0.08(.020±.003) .007 –.001
+.003
–0.03+0.08
0.18
(Stand off)
0.10±0.10(.004±.004)
0.25(.010)(.018/.030)0.45/0.75
(.020±.008)0.50±0.20
(Mounting height)
0~8°
Details of "A" part
1.50+0.20–0.10
+.008–.004.059
0.08(.003)
LEAD No.
M0.08(.003)0.145±0.055(.006±.002)
MB3891
FUJITSU LIMITED
All Rights Reserved.
The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU salesrepresentatives before ordering.
The information and circuit diagrams in this document arepresented as examples of semiconductor device applications, andare not intended to be incorporated in devices for actual use. Also,FUJITSU is unable to assume responsibility for infringement ofany patent rights or other rights of third parties arising from the useof this information or circuit diagrams.
The products described in this document are designed, developedand manufactured as contemplated for general use, includingwithout limitation, ordinary industrial use, general office use,personal use, and household use, but are not designed, developedand manufactured as contemplated (1) for use accompanying fatalrisks or dangers that, unless extremely high safety is secured, couldhave a serious effect to the public, and could lead directly to death,personal injury, severe physical damage or other loss (i.e., nuclearreaction control in nuclear facility, aircraft flight control, air trafficcontrol, mass transport control, medical life support system, missilelaunch control in weapon system), or (2) for use requiringextremely high reliability (i.e., submersible repeater and artificialsatellite).Please note that Fujitsu will not be liable against you and/or anythird party for any claims or damages arising in connection withabove-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. Youmust protect against injury, damage or loss from such failures byincorporating safety design measures into your facility andequipment such as redundancy, fire protection, and prevention ofover-current levels and other abnormal operating conditions.
If any products described in this document represent goods ortechnologies subject to certain restrictions on export under theForeign Exchange and Foreign Trade Law of Japan, the priorauthorization by Japanese government will be required for exportof those products from Japan.
F0007 FUJITSU LIMITED Printed in Japan
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