MB3891 - dl.owneriq.netdl.owneriq.net/5/58ce3698-cc51-4227-bfb7-ad74779f0be0.pdf · MB3891 3 PIN DESCRIPTION (Continued) Pin No. Symbol I/O Descriptions 1, 2 N.C. Non connection

DS04-27801-1EFUJITSU SEMICONDUCTORDATA SHEET

ASSP For Power Management Applications (Mobile Phones)

Power Management ICfor GSM Mobile Phone

MB3891

DESCRIPTION

MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains allthe necessary functions to support all Digital, Analog and RF blocks in these phones. A Charge-pump includinga Logic Level Translation circuit is built in to support SIM-card (SmartCard) of both 3 and 5 Volt technology. Thecircuit contains a charger for a rechargeable Lithium coin cell of a Real Time Clock.

A complex control circuit is built in to generate main reset and to turn on and off the different LDO’s.

FEATURES• Supply voltage range : 3 V to 5.5 V• Low power consumption current during standby : 400 µA (MAX) • 6-channel low-saturation voltage type series regulator

: 2.1 V/2 channels, 2.8 V/3 channels, 2.5 V/2.8 V switch• Error prevention function during Low voltage• Power on reset function• 3 V/5 V SW for SIM-Card• SIM interface function• Backflow prevention function for Battery-Backup• Temperature prevention function

PACKAGE

64-pin plastic LQFP

(FPT-64P-M03)

MB3891

2

PIN ASSIGNMENT

(TOP VIEW)

(FPT-64P-M03)

N.C. : 49

N.C. : 50

SW2-OUTPUT : 51

SW2-INPUT : 52

SW1-ON : 53

SW2-ON : 54

SW3-ON : 55

CONT3 : 56

CONT5 : 57

OUT5 : 58

GND5 : 59

VBAT3 : 60

VBAT3 : 61

VBAT3 : 62

N.C. : 63

N.C. : 64

N.C

. : 1

N.C

. : 2

OU

T3

: 3

OU

T3

: 4

GN

D3

: 5

OU

T2

: 6

OU

T2

: 7

VB

AT

1 : 8

VB

AT

1 : 9

VB

AT

1 : 1

0

VB

AT

1 : 1

1

OU

T1

: 12

OU

T1

: 13

CO

NT

1 : 1

4

CO

NT

6 : 1

5

CO

NT

2 : 1

6

32 : GND-VSIM

31 : VCAP−

30 : VCAP+

29 : VSIMOUT

28 : OSC

27 : SIMPROG

26 : VSIM-ON

25 : VCC-VSIM

24 : REF-OUT

23 : VFIL

22 : VREF

21 : V-BACKUP

20 : VBAT2

19 : GND1

18 : DELAYCAP

17 : XPOWERGOOD

48 :

SW

3-IN

PU

T

47 :

SW

3-O

UT

PU

T

46 :

SW

1-IN

PU

T

45 :

SW

1-O

UT

PU

T

44 :

CO

NT

4

43 :

VB

AT

4

42 :

VB

AT

4

41 :

OU

T4

40 :

OU

T4

39 :

GN

D4

38 :

SIM

-IO

37 :

CLK

36 :

RS

T

35 :

µP-I

O

34 :

CLK

-IN

33 :

RE

SE

T-I

N

MB3891

PIN DESCRIPTION

(Continued)

Pin No. Symbol I/O Descriptions

1, 2 N.C. Non connection.

3, 4 OUT3 O LDO3 output pin.

5 GND3 LDO3 ground pin.


8, 9, 10, 11 VBAT1 Battery voltage input pin for LDO1 and LDO2.


14 CONT1 I Power on input from keypad (Active low, Pulled up to VBAT2).

15 CONT6 I “CONT6” input from digital system µP (Active high).

16 CONT2 I External accessory supply voltage Enable (Active high).

17 XPOWERGOOD O Generates the main reset. (Active low, when OUT1 is out of regulation).

18 DELAYCAP Timing capacitor for XPOWERGOOD delay.

19 GND1 LDO1, LDO2, V-BACKUP, Reference and System ground pin.

20 VBAT2 Battery voltage input pin for both UVLO’s, Reference and V-BACKUP LDO.

21 V-BACKUP O Supply voltage for Charger for rechargeable Lithium coin cell.

22 VREF O Supply voltage for Reference.

23 VFIL O Reference voltage Filter.

24 REF-OUT O Reference output voltage (Present when BACKUP UVLO is high).

25 VCC-VSIM Input voltage for charge pump. (Supplied by VBAT1).

26 VSIM-ON I VSIM supply Enable (Active high).

27 SIMPROG I VSIM programming: Low = 3 V SIM, High = 5 V SIM.

28 OSC Oscillator output pin.

29 VSIMOUT O Supply voltage for 3 or 5 V SIM-Card (SmartCard).

30 VCAP+ Positive side of boost capacitor.

31 VCAP− Negative side of boost capacitor.

32 GND-VSIM 3 or 5 V SIM-Card (SmartCard) ground pin.

33 RESET-IN I Non level shifted SIM reset (µP side).

34 CLK-IN I Non level shifted clock (µP side).

35 µP-IO I/O Non level shifted bi-directional data input/output (µP side).

36 RST O Level shifted SIM reset (SmartCard side).

37 CLK O Level shifted SIM clock (SmartCard side).

38 SIM-IO I/O Level shifted bi-directional SIM data input/output (SmartCard side).



3

MB3891

4

(Continued)Pin No. Symbol I/O Descriptions

42, 43 VBAT4 Supply voltage for LDO4.

44 CONT4 I OUT4 output voltage selection (“L”=2.8 V,“H”=2.5 V).

45 SW1-OUTPUT O Output of general purpose switch number 1 (Drain).

46 SW1-INPUT I Input of general purpose switch number 1 (Source).






53 SW1-ON I General purpose switch number 1 Enable (Active high).



56 CONT3 I OUT3 and OUT4 supply voltage Enable (Active high).

57 CONT5 I OUT5 supply voltage Enable (Active high).

58 OUT5 O Output terminal of LDO5.


60, 61, 62 VBAT3 Supply voltage for LDO and LDO5.


MB3891

BLOCK DIAGRAM

14

16

53

54

55

44

22

33

20 8 9 10 11

1213

17

18

1915

+

−

67

46

45

52

51

48

6061

4243

62

3

5

4

47

4041

39

21

34

35

36

37

38

27

28

26

CONT1

CONT6

CONT2

SW1-ON

SW2-ON

SW3-ON

CONT4

VREF

RESET-IN

CLK-IN

µP-IO

RST

CLK

SIM-IO

VSIM-ON

SIMPROG

OSC

VBAT2 VBAT1

OUT1

OUT2

SW1-INPUT

SW1-OUTPUT

SW2-INPUT

SW2-OUTPUT

SW3-INPUT

SW3-OUTPUT

VBAT3

OUT3

GND3

VBAT4

OUT4

GND4

V-BACKUP

XPOWERGOOD

DELAYCAP

GND1

PORMainUVLO

OverTemp

Protection

LDO1

LDO2

SW1

SW2

SW3

ONOUT

ONOUT

ONOUT

LDO3

ONOUT

LDO4

ON OUT

LDO5

ON OUT

LDO6

CONT4

BACKUPUVLO

VREFVREF-AMP

GSM/SIMLogicLevel

Translation

VSIMOUTCharge-pump

57CONT5

56CONT3

31 VCAP−

30 VCAP+

59 GND5

58 OUT5

24REF-OUT

23VFIL

25VCC-VSIM

29

VSIMOUT

32

GND-VSIMN.C.Pin : 1, 2, 49, 50, 63, 64

5

MB3891

6

ABSOLUTE MAXIMUM RATINGS

* : The packages are mounted on the dual-sided epoxy board(10 cm × 10 cm)

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

RECOMMENDED OPERATING CONDITIONS

WARNING: The recommended operating conditions are required in order to ensure the normal operation of thesemiconductor device. All of the device’s electrical characteristics are warranted when the device isoperated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operationoutside these ranges may adversely affect reliability and could result in device failure.No warranty is made with respect to uses, operating conditions, or combinations not represented onthe data sheet. Users considering application outside the listed conditions are advised to contact theirFUJITSU representatives beforehand.

Parameter Symbol ConditionsRating

UnitMin. Max.

Power supply voltageVBAT −0.3 7 V

VCC-VSIM −0.3 7 V

LDO regulator

IO OUT1 pin 120 mA

IO OUT2 pin 50 mA

IO OUT3 pin 100 mA

IO OUT4 pin 100 mA

IO OUT5 pin 50 mA

VSIMOUT chargepump IO VSIMOUT pin 10 mA

Power dissipation PD Ta ≤ +25 °C 800* mW

Storage temperature Tstg −55 +125 °C

Parameter Symbol ConditionsValue

UnitMin. Typ. Max.

Power supply voltageVBAT 3.0 3.6 5.5 V

VCC-VSIM 3.0 3.6 5.5 V

LDO capacitor guarantee value CO OUT1 to OUT5, V-BACKUP pin 0.8 1.0 µF

REF-OUT capacitor guarantee value

CO REF-OUT pin 0.027 µF

VSIMOUT capacitor guarantee value

CO VSIMOUT pin 10 µF

Operating ambient temperature Ta −20 +25 +85 °C

MB3891

ELECTRICAL CHARACTERISTICS (Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

* : Standard design value(Continued)

Parameter Symbol Pin No. ConditionsValue

UnitMin. Typ. Max.

General

Shutdown supply current

IBAT1

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

UVLO = “L”, BACKUP UVLO = “L”

80 µA

IBAT2

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

UVLO = “L”, BACKUP UVLO = “H”

160 µA

Standby supplycurrent

IBAT3

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

All circuit’s = On(No load)

400 µA

Operating ground current

IGND4, 5, 19, 32, 59

All circuit’s -VSIM = On Max. load on all regulators

10 mA

UVLO threshold voltage

VTHH

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

OUT1 = ON 2.980 3.080 3.180 V

VTHL

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

OUT1 = OFF 2.780 2.880 2.980 V

BACKUP UVLO threshold voltage

VTHH

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

V-BACKUP = ON 2.980 3.080 3.180 V

VTHL

8, 9, 10, 11, 20, 42, 43, 60, 61, 62

V-BACKUP = OFF 2.580 2.680 2.780 V

Input voltage

VIH 16, 56, 57 0.7 × OUT1

OUT1 V

VIL 16, 56, 57 0 0.3 × OUT1

V

VIH 14, 15, 44 0.7 × VBAT

VBAT V

VIL 14, 15, 44 0 0.3 × VBAT

V

VIH 26, 27 0.7 × VCC-VSIM

VCC-VSIM V

VIL 26, 27 0 0.3 × VCC-VSIM

V

Pull-up resistorRPU 17 15* kΩ

RPU 14, 57 200* kΩ

Pull-down resistor RPD 15, 53, 54, 55 200* kΩ

7

MB3891

8

(Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)

(Continued)

Parameter Symbol Pin No. Conditions

ValueUnit

Min. Typ. Max.

LDO1 (OUT1)

Output voltage VO 12, 13 −50 µA > OUT1 > −120 mA 2.000 2.100 2.200 V

Line regulation Line 12, 13 3.1 V < VBAT1 < 5.5 V 10 mV

Load reguration Load 12, 13 −50 µA > OUT1 > −120 mA 30 mV

Ripple rejection∆VBAT1/∆OUT1

R.R 12, 13 f = 217 Hz 45 dB

Dropout voltage VDO 12, 13 OUT1 = −120 mA 500 mV

GND current at low load IGND 19 OUT1 > −1 mA 30 µA

GND current at max. load IGND 19 OUT1 = −120 mA 2 mA

Output noise volt. (RMS) VNOVL 12, 13f = 10 Hz to 1 MHz, OUT1 = 1 µF

500 µV

XPOWER-GOOD

(RESET)

Output voltage

VOH 17 0.8 × OUT1

OUT1 V

VOL 17 0 0.1 × OUT1

V

Hold time TXPG 17 DELAYCAP = 0.033 µF 10 25 40 ms

LDO2 (OUT2)



Load regulation Load 6, 7 −50 µA > OUT2 > −50 mA 30 mV


R.R 6, 7 f = 217 Hz 45 dB



GND current at max. load IGND 19 OUT2 = −50 mA 1 mA


350 µV

General purpose switches

Input/Output resistance

RSW1 45, 46SW1-INPUT = 2.8 V(Gate/Source = 2.8 V)

4.0 Ω


7.0 Ω


7.0 Ω

MB3891


(Continued)


UnitMin. Typ. Max.

LDO3 (OUT3)





R.R 3, 4 f = 217 Hz 45 dB



GND current at max. load

IGND 5 OUT3 = −100 mA 2 mA


350 µV

LDO4 (OUT4)

Output voltage

VO 40, 41−50 µA > OUT4 > −100 mA, CONT4 = “L”

2.700 2.800 2.900 V

VO 40, 41−50 µA > OUT4 > −100 mA, CONT4 = “H”

2.400 2.500 2.600 V



Ripple rejection∆VBAT4 - OUT4/∆OUT4

R.R 40, 41 f = 217 Hz 45 dB






500 µV

LDO5 (OUT5)

Output voltage VO 58 −50 µA > OUT5 > −50 mA 2.700 2.800 2.900 V

Line regulation Line 58 3.1 V < VBAT3 < 5.5 V 10 mV

Load regulation Load 58 −50 µA > OUT5 > −50 mA 30 mV


R.R 58 f = 217 Hz 45 dB

Dropout voltage VDO 58 OUT5 = −50 mA 250 mV

GND current at low load IGND 59 OUT5 > −500 µA 20 µA



Output noise volt. (RMS) VNOVL 58f = 10 Hz to 1 MHz, OUT5 = 1 µF

350 µV

9

MB3891

10


(Continued)


UnitMin. Typ. Max.

LDO6 (V-BACKUP)

Output voltage VO 21−10 µA > V-BACKUP > −250 µA

2.000 2.100 2.200 V


Load regulation Load 21−10 µA > V-BACKUP > −250 µA

30 mV

Ripple rejection∆VBAT2/∆V-BACKUP

R.R 21 f = 217 Hz 25 dB

GND current at low load

IGND 19 V-BACKUP > −10 µA 10 µA


IGND 19 V-BACKUP = −250 µA 50 µA

Output noise volt. (RMS)

VNOVL 21f = 10 Hz to 1 MHz, V-BACKUP = 1 µF

500 µV

Reverse current IRC 21VBAT2 = 0 V, V-BACKUP = 3.0 V

100 nA

REF-OUT

Output voltage VO 24 0 µA > REF-OUT > −50 µA 1.200 1.225 1.250 V


Load regulation Load 24 0 µA > REF-OUT > −50 µA 6 mV

Ripple rejection∆VBAT2/∆REF-OUT

R.R 24 f = 217 Hz 50 dB

Output noise volt. (RMS)

VNOVL 24f = 10 Hz to 1 MHz, REF-OUT = 27 nF

250 µV

VSIMOUT chargepump

Output voltage

VO 29−50 µA > VSIMOUT > −10 mA, SIMPROG = “H”

4.600 5.000 5.400 V

VO 29−50 µA > VSIMOUT > −10 mA, SIMPROG = “L”

2.760 3.000 3.240 V

Line regulation Line 29 3.1 V < VCC-VSIM < 5.5 V 50 mV

Load regulation Load 29 −50 µA > VSIMOUT > −10 mA 100 mV

MB3891


(Continued)


UnitMin. Typ. Max.

VSIMOUT chargepump

Ripple rejection∆VCC-VSIM/∆VSIMOUT

R.R 29 f = 217 Hz 30 dB

Output current

IO 293.1 V < VCC-VSIM < 5.5 V, VSIMOUT = 5 V

10 mA

IO 293.1 V < VCC-VSIM < 5.5 V, VSIMOUT = 3 V

6 mA

GND current at no load

IGND 32 VSIMOUT > −50 µA 100 µA

Efficiency at max. load

η 25, 29VSIMOUT = −10 mA, VSIMOUT = 5 V

85 %

Output ripple voltage

VRP 29f = 10 Hz to 1 MHz, VSIMOUT = 10 µF

100 mVPP

Shutdown sup-ply current

ILDO 25 VSIM-ON = “L” 100 nA

GSM/SIM logic level translation

µp interface

Input voltage

VIH33, 34,

35 0.7 ×

OUT1 OUT1 V

VIL33, 34,

35 0 0.3 ×

OUT1V

Output voltage

VOH 35 µP-IO (max.) = −20 µA0.8 × OUT1

OUT1 V

VOL 35 µP-IO (max.) = 1 mA 0 0.2 × OUT1

V

11

MB3891

12

(Continued) (Ta = +25 °C, VBAT1 to VBAT4 = VCC-VSIM = 3.6 V)


UnitMin. Typ. Max.

SIMinterface

5 V (SIMPROG

= H)

Output voltageVOH 36 RST (max.) = −20 µA

VSIMOUT − 0.7

VSIMOUT V

VOL 36 RST (max.) = 200 µA 0 0.6 V

Rise time TR 36 RESET-IN = RST = 30 pF 400 µs

Fall time TF 36 RESET-IN = RST = 30 pF 400 µs

Output voltageVOH 37 CLK (max.) = −20 µA

0.7 × VSIMOUT

VSIMOUT V

VOL 37 CLK (max.) = 200 µA 0 0.5 V

Rise time TR 37 CLK-IN = CLK = 30 pF 27 ns

Fall time TF 37 CLK-IN = CLK = 30 pF 27 ns

Output voltageVOH 38 SIM-IO (max.) = −20 µA 3.8 VSIMOUT V

VOL 38 SIM-IO (max.) = 1 mA 0 0.4 V

Input voltageVIH 38 0.7 ×

VSIMOUT VSIMOUT V

VIL 38 0 0.8 V

Rise time TR 38 SIM-IO = 30 pF 1 µs

Fall time TF 38 SIM-IO = 30 pF 1 µs

SIMinterface

3 V (SIMPROG

= L)

Output voltage

VOH 36 RST (max.) = −20 µA0.8 ×

VSIMOUT VSIMOUT V

VOL 36 RST (max.) = 200 µA 0 0.2 × VSIMOUT

V

Rise time TR 36 RESET-IN = RST = 30 pF 400 µs

Fall time TF 36 RESET-IN = RST = 30 pF 400 µs

Output voltage

VOH 37 CLK (max.) = −20 µA0.7 ×

VSIMOUT VSIMOUT V

VOL 37 CLK (max.) = 200 µA 0 0.2 × VSIMOUT

V

Rise time TR 37 CLK-IN = CLK = 30 pF 50 ns

Fall time TF 37 CLK-IN = CLK = 30 pF 50 ns

Output voltageVOH 38 SIM-IO (max.) = −20 µA

0.7 × VSIMOUT

VSIMOUT V

VOL 38 SIM-IO (max.) = 1 mA 0 0.4 V

Input voltage

VIH 38 0.7 × VSIMOUT

VSIMOUT V

VIL 38 0 0.2 × VSIMOUT

V

Rise time TR 38 SIM-IO = 30 pF 1 µs

Fall time TF 38 SIM-IO = 30 pF 1 µs

MB3891

TYPICAL CHARACTERISTICS

(Continued)

400

350

300

250

200

150

100

50

00 1 2 3 4 5

Ta = +25 °CCONT1 = “L”CONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = OPENVSIM-ON = “H”SIMPROG = “H” OUT1 = No load

OUT2 = No loadOUT3 = No loadOUT4 = No loadOUT5 = No load

V-BACKUP = No loadVSIMOUT = No load

350

300

250

200

150

100

50

00 1 2 3 4 5

Ta = +25 °CCONT1 = OPENCONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = “H”VSIM-ON = “H”SIMPROG = “H”

OUT1 = No loadOUT2 = No loadOUT3 = No loadOUT4 = No loadOUT5 = No load

V-BACKUP = No loadVSIMOUT = No load

450

400

350

300

250

200

150

100

50

0

450

400

350

300

250

200

150

100

50

00 1 2 3 4 5

Ta = +25 °CCONT1 = OPENCONT2 = “H”CONT3 = “H”CONT4 = OPENCONT5 = OPENCONT6 = “H”VSIM-ON = “H”SIMPROG = “H”

OUT1 = 18 ΩOUT2 = 56 ΩOUT3 = 28 ΩOUT4 = 28 ΩOUT5 = 56 Ω

V-BACKUP = 8.4 kΩVSIMOUT = 510 Ω

IBAT

IGND

3.0

2.5

2.0

1.5

1.0

0.5

0.00 1 2 3 4 5 6 7

Ta = +25 °COUT1 = 1 µFCONT1 = OPENCONT6 = “H”

3.0

2.5

2.0

1.5

1.0

0.5

0.00 1 2 3 4 5

Ta = +25 °COUT1 = 1 µFCONT1 = “L”CONT6 = OPEN

2.2

2.1

2.0

1.9

1.8

1.70 −100 −200 −300 −500−400 −600 −700 −800

Ta = +25 °CVBAT = 3.6 VCONT1 = “L”CONT6 = OPEN

Pow

er s

uppl

y cu

rren

t IB

AT (

µA)

Pow

er s

uppl

y cu

rren

t IB

AT (

µA)

Power supply current vs. power supply voltage Power supply current vs. power supply voltage

Power supply voltage VBAT (V) Power supply voltage VBAT (V)

Output voltage vs. power supply voltage (LDO1)

Pow

er s

uppl

y cu

rren

t IB

AT (

mA

)

Power supply voltage VBAT (V)

Out

put v

olta

ge V

OU

T1

(V)

Power supply current , GND current vs. power supply voltage


Out

put v

olta

ge V

OU

T1

(V)

Output voltage vs. load current (LDO1)

Load current ILOAD (mA)

GN

D c

urre

nt IG

ND (

µA)

Out

put v

olta

ge V

OU

T1

(V)


Output voltage vs. power supply voltage (LDO1)

13

MB3891

14

0

−20

−40

−60

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = 3.6 VOUT1 = 1 µFOUT1 = 18 ΩCONT1 = “L”CONT6 = OPEN

0

−20

−40

−60

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = 3.6 VOUT1 = 1 µFCONT1 = “L”CONT6 = OPEN

0.6

0.5

0.4

0.3

0.2

0.1

0.00 −50 −100 −150 −200

VBAT = 2.1 VCONT1 = OPENCONT6 = “H”

Ta = +85 °C

Ta = −20 °C

Ta = +25 °C

2.13

2.12

2.11

2.10

2.09

2.08−40 −20 0 20 40 60 80 100

VBAT = 3.6 VCONT1 = OPENCONT6 = “H”

10

5

0

2.0

1.5

1.0

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

OUT1

VBAT

Ta = +25°COUT1 = 18 ΩCONT1 = “L”CONT6 = OPEN

Ripple rejection vs. frequency (LDO1) Ripple rejection vs. frequency (LDO1)

Rip

ple

reje

ctio

n R

.R (

dBm

)

Rip

ple

reje

ctio

n R

.R (

dBm

)

Frequency f (Hz) Frequency f (Hz)

Dropout voltage vs. load current (LDO1)

Dro

pout

vol

tage

VD

O (

V)


Output voltage vs. ambient temperature (LDO1)

Out

put v

olta

ge V

OU

T1

(V)

Ambient temperature Ta ( °C)

Output voltage rising waveforms (LDO1)

Pow

er s

uppl

y vo

ltage

VB

AT

t (ms)

Out

put v

olta

ge V

OU

T1

(V)

MB3891

(Continued)

4

3

2

1

0 2

1

0

0 50 100 150 200 250 300 350 400 450 500

Ta = +25°COUT1 = No loadCONT1 = “L”CONT6 = OPEN

VBAT

OUT1

4

2

0

2

1

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

OUT1

VBAT

Ta = +25°CVBAT = 1 µFOUT1 = No loadCONT1 = “L”CONT6 = OPEN

4

2

0

2

1

0

0 20 40 60 80 100 120 140 160 180 200

OUT1

CONT1

Ta = +25°CVBAT = 3.6 VOUT1 = 18 ΩCONT6 = OPEN

10

5

0

2.0

1.5

1.0

0.5

0.0

0 20 40 60 80 100 120 140 160 180 200

CONT1

OUT1

Ta = +25°CVBAT = 3.6 VOUT1 = No loadCONT6 = OPEN

2.0

1.5

1.0

0.5

0.0

2

1

0

0 10 20 30 40 50 60 70 80 90 100

OUT1

VC

OUT1 = 0 A −120 mA

Ta = +25°CVBAT = 3.6 VCONT1 = “L”

CONT6 = OPEN

VBAT = 3.6 V

VREF = 1.225 V

LDO1 OUT1

1 µF

120 mA

4 V0 V

VC

Output voltage falling waveforms (LDO1) Output voltage falling waveforms (LDO1)

Waveform at rapid change of output load (LDO1)

Out

put v

olta

ge V

OU

T1

(V)

t (µs)

NP

N c

olle

ctor

vol

tage

VC (

V)

Pow

er s

uppl

y vo

ltage

VB

AT (V

)

t (ms) O

utpu

t vol

tage

VO

UT

1 (V

) t (s)

Output voltage rising waveforms (LDO1)

Inpu

t vol

tage

VC

ON

T1 (

V)

t (µs)

Out

put v

olta

ge V

OU

T1

(V)

Output voltage falling waveforms (LDO1)

t (ms)

[Measurement diagram]

(IC internal)

Pow

er s

uppl

y vo

ltage

VB

AT (V

)

Out

put v

olta

ge V

OU

T1

(V)

Inpu

t vol

tage

VC

ON

T1

(V)

Out

put v

olta

ge V

OU

T1

(V)

15

MB3891

16

(Continued)

2.0

1.5

1.0

0.5

0.0

2

1

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

OUT1 = −120 mA 0 A

VC

OUT1

Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT6 = OPEN

VBAT = 3.6 V

VREF = 1.225 V

LDO1 OUT1

1 µF

120 mA

4 V0 V

VC

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3

2

1

0

OUT2

VC

0 10 20 30 40 50 60 70 80 90 100

OUT2 = 0 A −50 mA

Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT2 = “H”CONT6 = OPEN

VBAT = 3.6 V

VREF = 1.225 V

LDO2 OUT2

1 µF

50 mA

4 V0 V

VC

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3

2

1

0

0 10 20 30 40 50 60 70 80 90 100

OUT2

VC

OUT2 = −50 mA 0 A

Ta = +25°CVBAT = 3.6 VCONT1 = “L”CONT2 = “H”CONT6 = OPEN

VBAT = 3.6 V

VREF = 1.225 V

LDO2 OUT2

1 µF

50 mA

4 V0 V

VC


Out

put v

olta

ge V

OU

T1

(V)

t (ms) N

PN

Col

lect

or v

olta

ge V

C (V

)


(IC internal)


Out

put v

olta

ge V

OU

T2

(V)

t (µs)

NP

N C

olle

ctor

vol

tage

VC (V

)


(IC internal)


Out

put v

olta

ge V

OU

T2

(V)

t (ms)

NP

N C

olle

ctor

vol

tage

VC (V

)


(IC internal)

MB3891

(Continued)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 1 2 3 4 5 6 7

Ta = +25 °CVFIL = 0.1 µF

1.24

1.23

1.22

1.21

1.20

1.19−40 −20 0 20 40 60 80 100

VBAT = 3.6 V

Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”SIMPROG = “H”

VSIMOUT = 510 Ω

VSIMOUT = No load

100000

10000

1000

100

10

10 1 2 3 4 5

Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”SIMPROG = “L”

100000

10000

1000

100

10

10 1 2 3 4 5

VSIMOUT = 510 Ω

VSIMOUT = No load

Ta = +25 °CVBAT = 3.6 VVSIM-ON = “H”

SIMPROG = “H”VSIMOUT = No load

SIMPROG = “L”VSIMOUT = No load

5

4

3

2

1

00 1 2 3 4 5 6 7

Ref

eren

ce v

olta

ge V

FIL (

V)

Ref

eren

ce v

olta

ge V

FIL (

V)

Reference voltage vs. power supply voltage Reference voltage vs. ambient temperature

Power supply voltage VBAT (V) Ambient temperature Ta ( °C)

Output voltage vs. power supply voltage (VSIMOUT Chargepump)

Pow

er s

uppl

y cu

rren

t IC

C-V

SIM

(µA

)

Power supply voltage VCC-VSIM (V)

Out

put v

olta

ge V

SIM

OU

T (

V)

Power supply current vs. power supply voltage (VSIMOUT Chargepump)


Pow

er s

uppl

y cu

rren

t IC

C-V

SIM

(µA

)


Power supply current vs. power supply voltage (VSIMOUT Chargepump)

17

MB3891

18

(Continued)

3.00

2.99

2.98

2.97

2.96

2.95

2.94

2.93

2.92

2.91

2.900 −5 −10 −15 −20

VCC-VISM = 5.5 V

VCC-VISM = 3.1 V

VCC-VISM = 3.6 V

Ta = +25 °CVSIM-ON = “H”SIMPROG = “L”

5.00

4.95

4.90

4.85

4.80

4.75

4.70

4.65

4.600 −5 −10 −15 −20

VCC-VISM = 5.5 V

VCC-VISM = 3.1 V VCC-VISM = 3.6 V

Ta = +25 °CVSIM-ON = “H”SIMPROG = “H”

0

−20

−40

−60

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µFVSIMOUT = 510 Ω

0

−20

−40

−60

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µF

0

−20

−40

−60

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µFVSIMOUT = 510 Ω

0

−20

−30

−40

−80

−10010 100 1 k 10 k 100 k 1 M

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VCAP+ VCAP− = 0.1 µFVSIMOUT = 10 µF

Out

put v

olta

ge V

SIM

OU

T (

V)

Out

put v

olta

ge V

SIM

OU

T (

V)

Output voltage vs. load current (VSIMOUT Chargepump)

Output voltage vs. load current (VSIMOUT Chargepump)

Load current ILOAD (mA) Load current ILOAD (mA)

Rip

ple

reje

ctio

n R

.R (

dBm

)

Frequency f (Hz)

Ripple rejection vs. frequency (VSIMOUT Chargepump)

Rip

ple

reje

ctio

n R

.R (

dBm

)

Frequency f (Hz)


Rip

ple

reje

ctio

n R

.R (

dBm

)

Frequency f (Hz)


Rip

ple

reje

ctio

n R

.R (

dBm

)

Frequency f (Hz)


MB3891

(Continued)

100

90

80

70

60

50

40

30

20

10

03.0 3.5 4.0 4.5 5.0 5.5

Ta = +25 °CVSIM-ON = “H”SIMPROG = “L”

ILOAD = −10 mA

ILOAD = −1 mA

100

90

80

70

60

50

40

30

20

10

03.0 3.5 4.0 4.5 5.0 5.5

ILOAD = −10 mA

ILOAD = −1 mA

Ta = +25 °CVSIM-ON = “H”SIMPROG = “H”

100

90

80

70

60

50

40

30

20

10

00 −5 −10 −15 −20

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”

VCC-VSIM = 5.5 V

VCC-VSIM = 3.6 V

VCC-VSIM = 3.1 V

100

90

80

70

60

50

40

30

20

10

00 −5 −10 −15 −20

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”

VCC-VSIM = 3.1 V

VCC-VSIM = 3.6 V

VCC-VSIM = 5.5 V

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

10

5

0 5

4

3

2

1

0

VSIM-ON

VSIMOUT

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “H”VSIMOUT = 510 Ω

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

10

5

0

3

2

1

0

VSIM-ON

VSIMOUT

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “L”VSIMOUT = 510 Ω

Effi

cien

cy η

(%

)

Effi

cien

cy η

(%

)

Efficiency vs. power supply voltage (VSIMOUT Chargepump)

Efficiency vs. power supply voltage (VSIMOUT Chargepump)

Power supply voltage VCC-VSIM (V) Power supply voltage VCC-VSIM (V)

Effi

cien

cy η

(%

)


Efficiency vs. load current (VSIMOUT Chargepump)

Effi

cien

cy η

(%

)


Efficiency vs. load current (VSIMOUT Chargepump)

Inpu

t vol

tage

VS

IM-O

N (V

)

t (ms)

Output voltage rising waveforms (VSIMOUT Chargepump)

Out

put v

olta

ge V

SIM

OU

T (

V)

t (ms)


Inpu

t vol

tage

VS

IM-O

N (V

)

Out

put v

olta

ge V

SIM

OU

T (

V)

19

MB3891

20

(Continued)

SIMPROG

VSIMOUT

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIMOUT = 510 ΩVSIM-ON = “H”

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

10

5

0 5

4

3

2

1

0

SIMPROG

VSIMOUT

Ta = +25 °CVBAT = VCC-SIM = 3.6 VVSIMOUT = 510 ΩVSIM-ON = “H”

0.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.01.0

10

5

0 5

4

3

2

1

0

0 5 15 20 25 30 35 40 45 5010

10

5

0 5

4

3

2

1

0

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “H”VSIMOUT = 510 Ω

VSIM-ON

VSIMOUT

0 5 15 20 25 30 35 40 45 5010

10

5

0

3

2

1

0

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VSIMPROG = “L”VSIMOUT = 510 Ω

VSIM-ON

VSIMOUT

0 2 6 8 10 12 14 16 18 204

40

20

0

−20

−40

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = No loadAC COUPLED

0 2 6 8 10 12 14 16 18 204

20

0

−20

Ta = +25 °CVBAT = VCC-SIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = No loadAC COUPLED

Out

put v

olta

ge V

SIM

OU

T (

mV

)

t (µs)

Output voltage waveforms (VSIMOUT Chargepump)

Out

put v

olta

ge V

SIM

OU

T (

mV

)

t (µs)


Inpu

t vol

tage

VS

IMP

RO

G (

V)

t (ms)


Out

put v

olta

ge V

SIM

OU

T (

V)

t (ms)

Output voltage falling waveforms (VSIMOUT Chargepump)

Inpu

t vol

tage

VS

IM-O

N (

V)

t (ms)


Out

put v

olta

ge V

SIM

OU

T (

V)

t (ms)


Inpu

t vol

tage

VS

IMP

RO

G (

V)

Out

put v

olta

ge V

SIM

OU

T (

V)

Inpu

t vol

tage

VS

IM-O

N (

V)

Out

put v

olta

ge V

SIM

OU

T (

V)

MB3891

(Continued)

5

4

3

2

1

00.0 0.5 1.0 1.5 2.0 2.5

SIMPROG = "H"

SIMPROG = "L"

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = "H"CONT1 = "L"CONT6 = OPEN

2.5

2.0

1.5

1.0

0.5

0.00 1 2 3 4 5

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L” or “H”CONT1 = “L”CONT6 = OPEN

40

20

0

−20

−40

0 2 4 6 8 10 14 16 18 2012

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = 510 ΩAC COUPLED

20

0

−20

0 2 4 6 8 10 12 14 16 18 20

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”VSIMOUT = 5.1 kΩAC COUPLED

0 2 4 6 8 10 12 14 16 18 20

40

20

0

−20

−40

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = 510 ΩAC COUPLED

60

40

20

0

−20

−40

−60

0 2 4 6 8 10 12 14 16 18 20

Ta = +25 °CVBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”VSIMOUT = 5.1 kΩAC COUPLED

Out

put v

olta

ge V

SIM

IO (

V)

Input voltage VUPIO (V)

Output voltage vs. input voltage (SIM Inter-

Out

put v

olta

ge V

SIM

OU

T (

mV

)

t (µs)


Out

put v

olta

ge V

SIM

OU

T (

mV

) t (µs)


Out

put v

olta

ge V

SIM

OU

T (

mV

)

t (µs)


Out

put v

olta

ge V

SIM

OU

T (

mV

)

t (µs)


Out

put v

olta

ge V

UP

IO (

V)

Input voltage VSIMIO (V)

Output voltage vs. input voltage (SIM Interface)

21

MB3891

22

(Continued)

3.10

3.05

3.00

2.95

2.90

2.85

2.80−40 −20 0 20 40 60 80 100

VBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “L”

5.00

4.95

4.90

4.85

4.80

4.75

4.70−40 −20 0 20 40 60 80 100

VBAT = VCC-VSIM = 3.6 VVSIM-ON = “H”SIMPROG = “H”

1000

800

600

400

200

0−40 −20 200 40 60 80 100

Out

put v

olta

ge V

SIM

OU

T (

V)


Output voltage vs. ambient temperature (SIM Interface)

Pow

er d

issi

patio

n P

D (

mW

)


Power dissipation vs. ambient temperature

Out

put v

olta

ge V

SIM

OU

T (

V)


Output voltage vs. ambient temperature (SIM Interface)

MB3891

FUNCTIONAL DESCRIPTION (1) MAIN UVLO/BACKUP UVLO

Transient power-on surge states or sudden drops in supply voltage (VBAT2) can cause an IC to operate abnor-mally, leading to destruction or damage to system elements. To prevent this type of fault, the undervoltage lockoutcircuits (UVLO/ Backup UVLO) will shut off the output from OUT1 to V-BACKUP if the supply voltage falls belowthe UVLO circuit threshold voltage (3.0 V/2.8 V typ.). System operation is restored as soon as the supply voltagerises above the UVLO circuits threshold voltage (3.2 V typ.).

(2) LDO1

The LDO1 circuits uses the reference voltage supply and generates an output voltage (2.1 V typ.) at the OUT1terminal (pin 12,13). Power can be drawn from the OUT1 terminal for external use, up to a maximum load currentof 120 mA.

(3) XPOWERGOOD (RESET)

When the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), after a delay interval set by a capacitor(CDELAYCAP) connected to the DELAYCAP terminal (pin 18), the XPOWERGOOD terminal (pin 17) goes to “H”level and resets the microcomputer. At the same time, the LDO2, LDO3, and LDO4 output is controlled ON/OFF.

(4) LDO2

The LDO2 circuit uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT2terminal (pin 6,7) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT2 terminal (pin 16). Power can be drawn from the OUT2 terminal for external use, up to amaximum load current of 50 mA.

(5) General Purpose switches

Any of the OUT terminals can be connected to any SW-INPUT terminal so that when the corresponding SW-ON terminal is at “H” level, the OUT terminal voltage can be drawn from the associated SW-OUTPUT terminal.

(6) LDO3

The LDO3 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT3terminal (pin 3,4) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT3 terminal (pin 56). Power can be drawn from the OUT3 terminal for external use, up to amaximum load current of 100 mA.

(7) LDO4

The LDO4 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT4terminal (pin 40,41) when the XPOWERGOOD terminal (pin 17) voltage is at “H” level and an “H” level signal isinput at the CONT3 terminal (pin 56) , and an “L” level signal is input at the CONT4 terminal (pin 44). When an“H” level signal is input at the CONT4 terminal, the output voltage at the OUT4 terminal is 2.5 V (typ.). Powercan be drawn from the OUT4 terminal for external use, up to a maximum load current of 100 mA.

23

MB3891

24

(8) LDO5

The LDO5 circuits uses the reference voltage supply and generates an output voltage (2.8 V typ.) at the OUT5terminal (pin 57) when the OUT1 terminal (pin 12,13) is in output state and an “H” level signal is input at theCONT5 terminal (pin 57). Power can be drawn from the OUT5 terminal for external use, up to a maximum loadcurrent of 50 mA.

(9) LDO6

The LDO6 circuit uses the reference voltage supply and generates an output voltage (2.1 V typ.) at the V-BACKUPterminal (pin 21). Power can be drawn for external use, from the V-BACKUP terminal, up to a maximum loadcurrent of 250 µA.

(10) REF-OUT

This circuit uses the reference voltage generated by the reference voltage block (1.225 V typ.) to produce atemperature compensated reference voltage (1.225 V typ.) at the REF-OUT terminal(pin 24) by means of avoltage follower. The reference voltage can also be drawn from the REF-OUT terminal for external use, up to aload current of 50 µA.

(11) VSIMOUT Chargepump

The VSIMOUT charge pump uses the voltage from the battery and generates 5.0 V (typ.) voltage at the VSIMOUTterminal (pin 29) when an “H” level signal is input at the SIMPROG terminal (pin 27) , or 3.0 V (typ.) voltagewhen an “L” level signal input at the SIMPROG terminal. This voltage can also be drawn from the VSIMOUTterminal for external use, up to a load current of 10 mA.

(12) GSM/SIM Logic Translation µP Interface

When a signal is input from the microprocessor to the RESET-IN terminal(pin 33) and CLK-IN terminal (pin 34),a level-shifted voltage is output from the RST terminal (pin 36) and CLK terminal (pin 37) to the SIM card. TheµP-IO terminal (pin 35) and SIM-IO terminal (pin 38) are input/output pins and carry signals between themicroprocessor and SIM card.

(13) SIM Interface 5 V (SIMPROG = “H”)

When an “H” level signal is input to the SIMPROG terminal (pin 27), 5.0 V (typ.) voltage is generated from theVSIMOUT terminal (pin 29) as a power supply for the SIM card.

(14) SIM Interface 3 V (SIMPROG = “L”)

When an “L” level signal is input to the SIMPROG terminal (pin 27), 3.0 V (typ.) voltage is generated from theVSIMOUT terminal (pin 29) as a power supply for the SIM card.

SETTING THE XPOWERGOOD TIMEWhen the OUT1 terminal (pin 12,13) voltage exceeds 2.0 V (typ.), the capacitor (CDELAYCAP) connected to theDELAYCAP terminal (pin 18) starts charging, the XPOWERGOOD terminal (pin 17) voltage rises. The XPOW-ERGOOD terminal voltage rising time (XPOWERGOOD time) can be set by a capacitor connected to theDELAYCAP terminal.

XPOWERGOOD time : TXPG (s) := 0.8 × CDELAYCAP (µF)

MB3891

OPERATION TIMING CHART

VBAT1 to VBAT4,VCC-VSIM

CONT1

CONT6

CONT5

CONT2

CONT3

SW1-ON

VSIM-ON

SIMPROG

REF-OUT

OUT6

OUT1

XPOWERGOOD

OUT5

OUT2

OUT3 (OUT4)

SW1-OUTPUT

VSIMOUT

SW2-OUTPUT(SW3-OUTPUT)

SW2-ON (SW3-ON)

delay

2.0 V

VSIMOUT = 5 VVSIMOUT = 3 V

(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (16) (17)

Input

Output

(1) : Battery controlled (5) : OUT1 hold(2) : BACKUP UVLO ON (6) to (12) : µP controlled(3) : phone turned on (14) : Main UVLO off(4) : XPOWERGOOD on (16) : BACKUP UVLO off

25

MB3891

26

APPLICATION EXAMPLE

C11 µF

C121 µF

C111 µF

C20.033 µF

C31 µF

C41 µF

C51 µF

C61 µF

C71 µF

C80.1 µF

C100.1 µF

C910 µF

C131 µF

C141 µF

µP

SIM

KEYPAD

R1200 kΩ

R2200 kΩ

R3200 kΩ

R4200 kΩ

R5200 kΩ

14

8 9 10 11

15

16

54

53

55

1213

17

18

19

67

52

51

48

47

606162

34

5

46

45

58

59

4243

4041

39

21

CONT1

CONT6

CONT2

SW1-ON

SW2-ON

SW3-ON

CONT3

CONT5

CONT4

VREF

VFIL

REF-OUT

VSIM-ON

SIMPROG

RESET-IN

CLK-IN

µP-IO

VCC-VSIM

OSC

VSIMOUT

VCAP+

VCAP−

RST

CLK

SIM-IO

GND-VSIM

XPOWERGOOD

DELAYCAP

GND1

OUT2

SW2-INPUT

SW2-OUTPUT

SW3-INPUT

SW3-OUTPUT

VBAT3

OUT3

GND3

OUT5

GND5

VBAT4

OUT4

GND4

V-BACKUP

SW1-INPUT

SW1-OUTPUT

OUT1

VBAT1VBAT2

56

57

44

22

23

24

26

27

33

34

35

25

28

29

30

31

36

37

38

32

20

N.C.Pin : 1, 2, 49, 50, 63, 64

MB3891

USAGE PRECAUTIONS• Printed circuit board ground lines should be set up with consideration for common impedance.

• Take appropriate static electricity measures.• Containers for semiconductor materials should have anti-static protection or be made of conductive material.• After mounting, printed circuit boards should be stored and shipped in conductive bags or Containers.• Work platforms, tools, and instruments should be properly grounded.• Working personal should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

• Do not apply negative voltages

The use of negative voltages below -0.3V may create parasitic transistors on LSI lines, Which can cause abnormaloperation.

ORDERING INFORMATION

Part number Package Remarks

MB3891PFV64-pin Plastic LQFP

(FPT-64P-M03)

27

MB3891

PACKAGE DIMENSION

64-pin plastic LQFP (FPT-64P-M03)

Note : Pins width and pins thickness include plating thickness.

Dimensions in mm (inches) .

C 1998 FUJITSU LIMITED F64009S-3C-6

"A"

33

32

17

161

64

49

48

INDEX

12.00±0.20(.472±.008)SQ

10.00±0.10(.394±.004)SQ

0.50±0.08(.020±.003) .007 –.001

+.003

–0.03+0.08

0.18

(Stand off)

0.10±0.10(.004±.004)

0.25(.010)(.018/.030)0.45/0.75

(.020±.008)0.50±0.20

(Mounting height)

0~8°

Details of "A" part

1.50+0.20–0.10

+.008–.004.059

0.08(.003)

LEAD No.

M0.08(.003)0.145±0.055(.006±.002)

MB3891

FUJITSU LIMITED

All Rights Reserved.

The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU salesrepresentatives before ordering.

The information and circuit diagrams in this document arepresented as examples of semiconductor device applications, andare not intended to be incorporated in devices for actual use. Also,FUJITSU is unable to assume responsibility for infringement ofany patent rights or other rights of third parties arising from the useof this information or circuit diagrams.

The products described in this document are designed, developedand manufactured as contemplated for general use, includingwithout limitation, ordinary industrial use, general office use,personal use, and household use, but are not designed, developedand manufactured as contemplated (1) for use accompanying fatalrisks or dangers that, unless extremely high safety is secured, couldhave a serious effect to the public, and could lead directly to death,personal injury, severe physical damage or other loss (i.e., nuclearreaction control in nuclear facility, aircraft flight control, air trafficcontrol, mass transport control, medical life support system, missilelaunch control in weapon system), or (2) for use requiringextremely high reliability (i.e., submersible repeater and artificialsatellite).Please note that Fujitsu will not be liable against you and/or anythird party for any claims or damages arising in connection withabove-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. Youmust protect against injury, damage or loss from such failures byincorporating safety design measures into your facility andequipment such as redundancy, fire protection, and prevention ofover-current levels and other abnormal operating conditions.

If any products described in this document represent goods ortechnologies subject to certain restrictions on export under theForeign Exchange and Foreign Trade Law of Japan, the priorauthorization by Japanese government will be required for exportof those products from Japan.

F0007 FUJITSU LIMITED Printed in Japan

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MB3891 - dl.owneriq.netdl.owneriq.net/5/58ce3698-cc51-4227-bfb7-ad74779f0be0.pdf · MB3891 3 PIN DESCRIPTION (Continued) Pin No. Symbol I/O Descriptions 1, 2 N.C. Non connection