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IRGP6650DPbF IRGP6650D-EPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
Base part number Package Type Standard Pack Orderable Part Number Form Quantity
IRGP6650DPbF TO-247AC Tube 25 IRGP6650DPbF
IRGP6650D-EPbF TO-247AD Tube 25 IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 80 IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current, VGE = 15V 105 ILM Clamped Inductive Load Current, VGE = 20V 140
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 25
IFM Diode Maximum Forward Current 140
VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 306
W PD @ TC = 100°C Maximum Power Dissipation 153 TJ Operating Junction and -40 to +175
°C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
A
Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.49
°C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 3.35
VCES = 600V
IC = 50A, TC =100°C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 35A
Applications Welding H Bridge Converters
Features Benefits
Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications
Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters
Square RBSOA and Maximum Temperature of 175°C Improved Reliability due to Rugged Hard Switching Performance and High Power Capability
5µs Short Circuit Enables Short Circuit Protection Operation Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation Lead-free, RoHS compliant Environmentally friendly
G C E Gate Collector Emitter
G
C
E C
C
G C
E
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGP6650DPbF TO‐247AC
IRGP6650D‐EPbF TO‐247AD
E
G
n-channel
C
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IRGP6650DPbF/IRGP6650D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.45 — V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.65 1.95
V IC = 35A, VGE = 15V, TJ = 25°C
— 2.05 — IC = 35A, VGE = 15V, TJ = 150°C — 2.10 — IC = 35A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.0mA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 22 — S VCE = 50V, IC = 35A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 50 VGE = 0V, VCE = 600V — 600 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
VF Diode Forward Voltage Drop — 1.80 2.80
V IF = 8A
— 1.30 — IF = 8A, TJ = 175°C Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 75 — nC
IC = 35A Qge Gate-to-Emitter Charge (turn-on) — 20 — VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 30 — VCC = 400V Eon Turn-On Switching Loss — 300 —
µJ IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 25°C
Energy losses include tail & diode reverse recovery
Eoff Turn-Off Switching Loss — 630 — Etotal Total Switching Loss — 930 — td(on) Turn-On delay time — 40 —
ns tr Rise time — 30 — td(off) Turn-Off delay time — 105 — tf Fall time — 20 — Eon Turn-On Switching Loss — 640 —
µJ IC = 35A, VCC = 400V, VGE=15V
RG = 10, L=210µH, TJ = 175°C
Energy losses include tail & diode reverse recovery
Eoff Turn-Off Switching Loss — 930 — Etotal Total Switching Loss — 1570 — td(on) Turn-On delay time — 40 —
ns tr Rise time — 30 — td(off) Turn-Off delay time — 120 — tf Fall time — 60 — Cies Input Capacitance — 2220 — VGE = 0V Coes Output Capacitance — 130 — pF VCC = 30V Cres Reverse Transfer Capacitance — 65 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 140A
FULL SQUARE VCC = 480V, Vp ≤ 600V VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 165 — µJ TJ = 175°C trr Diode Reverse Recovery Time — 50 — ns VCC = 400V, IF = 8A, VGE = 15V Irr Peak Reverse Recovery Current — 14 — A Rg = 22L=1.0mH, Ls=150nH
µA
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 10L=210µH.
R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26.
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Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V
25 50 75 100 125 150 175
TC (°C)
0
20
40
60
80
100
I C (
A)
0.1 1 10 100
f , Frequency ( kHz )
20
30
40
50
60
70
80
90
Load
Cur
rent
( A
)
For both:Duty cycle : 50%Tj = 175°CTcase = 100°CGate drive as specifiedPower Dissipation = 153W
I
Square Wave:
VCC
Diode as specified
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
350
Pto
t (W
)
Fig. 4 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V
1 10 100 1000
VCE (V)
0.1
1
10
100
1000
I C (
A)
10µsec
100µsec
Tc = 25°CTj = 175°CSingle Pulse
DC 1msec
Fig. 2 - Maximum DC Collector Current vs. Case Temperature
10 100 1000
VCE (V)
1
10
100
1000
I C (
A)
Fig. 3 - Power Dissipation vs. Case Temperature
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IRGP6650DPbF/IRGP6650D-EPbF
Fig. 10 - Typical VCE vs. VGE TJ = -40°C
Fig. 11 - Typical VCE vs. VGE TJ = 25°C
Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140I C
E (
A)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
0
20
40
60
80
100
120
140
I F (
A)
-40°C25°C175°C
Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs
5 10 15 20
VGE (V)
0
2
4
6
8
VC
E (
V)
ICE = 18A
ICE = 35A
ICE = 70A
Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs
5 10 15 20
VGE (V)
0
2
4
6
8
VC
E (
V)
ICE = 18A
ICE = 35A
ICE = 70A
Fig. 9 - Typ. Diode Forward Voltage Drop Characteristics
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IRGP6650DPbF/IRGP6650D-EPbF
Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 35A; VGE = 15V
5 10 15 20
VGE (V)
0
2
4
6
8V
CE
(V
)
ICE = 18A
ICE = 35A
ICE = 70A
2 4 6 8 10 12 14 16
VGE (V)
0
20
40
60
80
100
120
140
I CE
(A
)
TJ = 25°C
TJ = 175°C
0 10 20 30 40 50 60 70
IC (A)
1
10
100
1000
Sw
ich
ing
Tim
e (n
s)
tR
tdOFF
tF
tdON
Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs
0 20 40 60 80 100
RG ()
10
100
1000
Sw
ich
ing
Tim
e (n
s)
tR
tdOFF
tF
tdON
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 10; VGE = 15V
0 10 20 30 40 50 60 70
IC (A)
0
1000
2000
3000
4000
Ene
rgy
(J)
EOFFEON
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; ; VCE = 400V, RG = 10; VGE = 15V
0 20 40 60 80 100
Rg ()
500
1000
1500
2000
2500
3000
Ene
rgy
(J)
EOFF
EON
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IRGP6650DPbF/IRGP6650D-EPbF
Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C
Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
2 4 6 8 10 12 14 16
IF (A)
0
5
10
15
20I R
R (
A)
RG = 47
RG = 10
RG = 100
RG = 22
0 20 40 60 80 100
RG (
0
4
8
12
16
I RR
(A
)
Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C
0 200 400 600 800
diF /dt (A/µs)
4
6
8
10
12
14
16
I RR
(A
)
Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C
2 4 6 8 10 12 14 16
IF (A)
0
50
100
150
200
250
Ene
rgy
(µJ)
RG = 10
RG = 47
RG = 100
RG = 22
0 200 400 600 800 1000
diF /dt (A/µs)
200
400
600
800
1000
QR
R (
nC)
22 10
100
47
16A
4A
8A
Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C
9 10 11 12 13 14 15 16
VGE (V)
0
4
8
12
16
20
Tim
e (µ
s)
0
50
100
150
200
250
Cu
rrent (A
)
Tsc
Isc
Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C
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Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0 100 200 300 400 500 600
VCE (V)
1
10
100
1000
10000
Cap
acita
nce
(pF
)
Cies
Coes
Cres
Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
0 20 40 60 80
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VG
E, G
ate-
to-E
mitt
er V
olta
ge
(V) VCES = 400V
VCES = 300V
Fig. 25 - Typical Gate Charge vs. VGE ICE = 35A
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
The
rmal
Res
pons
e (
Z thJ
C ) 0.20
0.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
Fig 26. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature
Ri (°C/W) i (sec)
0.03980 0.000061
0.10562 0.000090
0.20665 0.002600
0.13624 0.015477
J
J
1
12
23
3
R1
R1R2
R2R3
R3
Ci= iRiCi= iRi
C
C
4
4
R4
R4
100 125 150 175
Case Temperature (°C)
0
10
20
30
40
50
60
70
Rep
etiti
ve P
eak
Cur
rent
(A
)
D=0.4
D=0.2
D=0.1
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IRGP6650DPbF/IRGP6650D-EPbF
Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
The
rmal
Res
pon
se (
Z th
JC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.11659 0.000047
1.13634 0.000298
1.43445 0.002865
0.66410 0.026578
J
J
1
12
23
3
R1
R1R2
R2R3
R3
Ci= iRiCi= iRi
C
C
4
4
R4
R4
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IRGP6650DPbF/IRGP6650D-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+-
DC
4X
DUT
VCC
RSH
L
Rg
VCCDUT /DRIVER
diode clamp /DUT
-5V
Rg
VCCDUT
R = VCC
ICM
G force
C sense
100K
DUT0.0075µF
D1 22K
E force
C force
E sense
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IRGP6650DPbF/IRGP6650D-EPbF
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-0.2 0 0.2 0.4 0.6 0.8I C
E(A
)
VC
E(V
)
time(µs)
90% ICE
10% VCE
10% ICE
Eoff Loss
tf
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-0.2 0 0.2 0.4 0.6 0.8
I CE
(A)
VC
E(V
)
time (µs)
TEST CURRENT
90% ICE
10% VCE
10%ICE
tr
Eon Loss
-20
-15
-10
-5
0
5
10
15
-0.20 0.00 0.20 0.40 0.60
I F(A
)
time (µS)
PeakIRR
tRR
QRR
-50
0
50
100
150
200
250
-100
0
100
200
300
400
500
-10.0 -7.5 -5.0 -2.5 0.0 2.5 5.0
Vce
(V
)
Time (uS)
VCE
ICE
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IRGP6650DPbF/IRGP6650D-EPbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBERINTERNATIONAL
LOGORECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE Hindicates "Lead-Free" WEEK 35LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:WITH ASSEMBLY THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
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IRGP6650DPbF/IRGP6650D-EPbF
TO-247AD Package Outline Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
A S S E M B L Y Y E A R 0 = 2 0 0 0
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
L O T C O D E 5 6 5 7W IT H A S S E M B L Y P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A LR E C T IF IE R
L O G O 0 3 5 H
5 6 5 7
W E E K 3 5
L IN E H
L O T C O D EN o te : "P " in a s s e m b ly l in e p o s it io n
in d ic a te s "L e a d - F re e "
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
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IRGP6650DPbF/IRGP6650D-EPbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F)††
TO-247AC N/A
TO-247AD
RoHS Compliant Yes
Moisture Sensitivity Level
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History Date Comments
Added IFM Diode Maximum Forward Current = 140A with the note on page 1.
Removed note from switching losses test condition on page 2. 11/14/2014
Recommended