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IHP Technology Roadmap Update and Future

Research Topics

Bernd Tillack

IHPIm Technologiepark 2515236 Frankfurt (Oder)

MOS-AK Meeting, April 2-3, 2009

IHP Frankfurt (Oder)

Founded 1983

1991 Member of the Leibniz Association

1999: “Innovations for High Performance microelectronics”1000 m² class 1 clean room,staff: ~ 250 co-workers

2009: Leibniz Institute

4 core competencies:Materials research, Si process technology, RF circuit design, wireless communication systems

Funding 2008Institutional funds: € 16 million Third-party funds: € 11.5 million ERDF funds: € 12.7 million (European Regional Development Fund)

Core Competencies

Silicon based high-frequency technologies, circuits and systems for wireless and broadband communication

• System solutions for wireless and broadband communicationPrototypes of mixed-signal ICs; system-on-chip

• RF circuit designAnalog circuits in the higher GHz-range (frontends, converter..)

• Technology platform for wireless and broadband communication Performance increasing and functionality extending modules for standard

• New materials for microelectronics technologyincl. integration (e.g. SiGe:C, high-K, nanostructures)

Outline

• Technology Vision

• Future Research Topics

• Summary

Technology Vision

Develop Develop

High Value Added Technologies High Value Added Technologies

for Wireless and Broadband Applicationsfor Wireless and Broadband Applications

Technology Vision

CMOS Baseline Technology

Modular extension of CMOS technologies

SiGe:C HBT LDMOS Flash Memories Passive Devices

Development Early access QualifiedSeptember 2008

Technology Roadmap for MPW

* Qual. on customer request

Process 2007 2008 2009 2010 2011

SGB25V yes

GOD module

SG25H1 yesCMOS

Bipolar

SG25H3 yesCMOS

BipolarH3 PNP module PNP: 85/120 / 2.5 ready for qualification

SG13S yes

SG13C only RF CMOS yes

Bipolar Performance fT/f

max (GHz) / BV

CE0 (V)

digital libs

75/95 / 2.4 45/90 / 4 25/70 / 7

190/190 / 1.9 180/220 / 1.9

120/140 / 2.3 110/190 / 2.3 45/140 / 5 25/80 / 7

250/300 /1.745/120/4.0 tbd in 2009

tbd in 2009

IHP‘s Technology Focus: More than Moore

Source: ITRS Roadmap 2005

IHP: 0.13 µm BiCMOS

THz Devices

Si Photonics

Technology Vision – Future Research Topics

Modular extension of CMOS technologies – Diversification

THz DevicesHBTs

THZ HBTs

DOTFIVE Project

• Timeframe

3-year (2/08-1/11) IP project of 7th Framework Program• Target

0.5 THz SiGe Heterojunction Bipolar Transistor

For the future development of communication, imaging and radar applications

• Consortium

15 partners from industry and academia in 5 countries

ST, Infineon, IMEC, IHP, XMOD, GWT-TUD, ENSEIRB, Bunderwehr Uni. Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of Wuppertal

• Budget

Total € 14.75 million

€ 9.7 million founded by European Commission• For more information see www.dotfive.eu

DOTFIVE ProjectToday's state-of-the-art SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz at room temperature. With Dotfive Europe is getting ahead of the RF ITRS roadmap:

(www.dotfive.eu)

Generations of IHP’s High-Speed HBTs

Record gate delay of 2.5 ps

Digital circuit speed benchmarked by ring oscillator gate delay

Fastest circuit speed achieved in any Si IC technology

IEDM 2008: SiGe HBT module with 2.5 ps gate delay

23456789

101112

300/350200/200

70/100

120/140

Profile optimization

Self aligned &elevated extrinsic base

Low parasitic coll. design

Optimized base link

C-Doped SiGe base

2004 20082002

SiGe:C HBT RF LDMOS Flash Memories Passive Devices

THz DevicesHBTs MEMS Integration

MEMS integration in BiCMOS

Design and fabrication of dedicated MEMS components for Radio Frequency ICs

Integration of MEMS processing technique to BiCMOS

Major Applications Areas

RFMEMS: High-Q passives, RFMEMS Switches

Deep-Silicon Etching; Substrate etching under passives, TSVs, Sensors

RFMEMS Switches

Deep-Silicon Etching, TSV

Etched Region

Sensors

THz DevicesHBTs? MEMS Integration

Optical function“Si Photonics”

Silicon Photonics

(Source: Intel)

• Photonics electronics functional integration on CMOS (HELIOS) EU FP7

• SiLight BMBF

Si Photonics: Waveguide Integration

Waveguide preparation in IHP technology

High slope & minimal roughness

Excellent uniformuty

Small waveguide losses (<0.5dB/cm)

R=200…2000µm

R=1mm R=2mm

S-BendsMMIs

40 Gbps TIA in SiGe Technology1

• Transimpedance Amplifier (TIA): amplifies & converts photo-current to an output voltage

• 40 Gbps needs ~30 GHz BW

• 200 GHz SiGe BiCMOS (SG25H1)

• Developed in cooperation w. TU Dresden / Ellinger

40 Gbps TIA in SiGe Technology

1 A 40 Gbit/s TRANSIMPEDANCE AMPLIFIER IN 0.25 μm SiGe TECHNOLOGY WITH ULTRA LOW POWER CONSUMPTION S. Hauptmann, D. Schoeniger, R. Eickhoff, F. Ellinger, and C. Scheytt, IEEE MIKON 2008

40 Gbps TIA in SiGe Technology (II)

40 Gbps TIA in SiGe Technology

• Chip size 0.67 x 0.28 mm2

• TIA design combines High gain (73 dB) with very low power

Simulated: dashed; measured: solid

Silicon PhotonicsBiCMOS technology with optical functionality • Goal: Integration electronics & waveguide optics in a

qualifiedtechnology offered to fabless design partners (customers)

Optical BiCMOS

0.25/0.13 BiCMOSTechnology

SOI WaveguideOptics

ModulIntegration

Summary

0.25 µm/0.13 µm BiCMOS platform as baseline technology for

• MPW and prototyping

• Integration of additional functionality following the

“More than Moore” path

Comparison with State-of-the-Art

IHP single poly (reference)+ well controlled base epitaxy+ low resistances

(Rücker et al. IEDM 2007)

New double poly+ fully self-aligned & lateral base-link =>reduced capacitances+ low silicide resistance+ enhanced SIC

C100nm

CMOS/BiCMOS – MEMS Integration

BiCMOS + Microviscosimeter (Minimal invasive blood sugar sensor ):

Electronics + wireless communication + sensor function

Cantilever

RFMEMS Switches in BiCMOS

Parameter Simulated Results

Insertion Loss 0.3 dB

Isolation 25 dB

OperatingVoltage

< 20 V(Measured Result)

Con-state/Coff-state >30

Movable Membrane

SupportingBeams

AnchorsBottom Electrode

Main application areas: Multiband circuits and 60-70 GHz applications

Reliability is the main concern

<10 V operating voltages seems possible

Etching Holes

RFMEMS Capacitive Switch

10 20 30 40 50 60 700 80

freq, GHz

-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0

nothing

cc) <in

,1)[5]

cc) <in

,1)[10

cc) <in

,1)[30

cc) <in

,1)[40

cc) <in

-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0

nothing

cc) <in

,1)[5]

cc) <in

,1)[10

cc) <in

,1)[30

cc) <in

,1)[40

cc) <in

5 10 15 20 250 30

Voltage

24 GHz

20 GHz

5 GHz2.5 GHz

10 GHz

5 10 15 20 250 30

Applied Voltage (V)

Pull-In Region

Measured Data @ 24 GHz

Pull-In voltage ~17V Mechanically stable up to 30V and no stiction observed At 24 GHz 25 dB isolationRF Characterization and reliability measurements are still on-going.

Integration Elektronik-Photonik

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