View
226
Download
2
Category
Preview:
Citation preview
Exem
Date of
1. N
1
C
N
F
America
EU (Am
ID numb
Commu
Associa
Europea
Radiolo
Healthc
ID Num
DIGITA
ID numb
Europea
(Ceram
ID numb
Europea
Equipm
ID numb
mption R
submission
Name and
1) Name a
Company:
Name:
Function:
With sup
an Chambe
mCham EU)
ber: 526578
unications a
ation of Japa
an Coordina
ogical, Elect
care IT Indu
ber – 05366
ALEUROPE
ber: 642707
an Ceramic
e-Unie)
ber: 794650
an Committ
ent Manufa
ber: 042014
Reques
n: January 1
d contact
and contac
STMicroe
Chapuis F
Quality
Sustaina
pport from:
er of Comme
80509-97
and Informat
an (CIAJ)
ation Comm
romedical a
stry (COCIR
6537746-69
747023-20
c Industry A
004946-12
tee of Dome
acturers (CE
463642-88
t Form
16, 2015
t details
ct details of
electronics
Frédéric
Mgmt Sys
ble Dvlpt M
erce to the
tion networ
mittee of the
and
R)
9
Association
estic
ECED)
1
– Exem
f applicant
T
E
stem &
anager
A
k
e
mption 7
:
Tel.:
E-Mail:
Address:
7(c)-IV
+33-24742
frederic.ch
msds@st.c
Rue Thale
37071 Tour
24154
apuis@st.c
com
s de Milet
rs France
com
Europea
Federat
ID numb
Europea
Associa
ID numb
Europea
Associa
ID Num
Informa
(ITI)
ID Num
IPC – A
Industrie
Japan B
ID numb
Japan B
System
ID numb
Japan E
Techno
(JEITA)
ID numb
Japan E
Associa
Lighting
ID numb
TechAm
ID numb
an Garden
tion (EGMF
ber 826690
an Passive
ation (EPCIA
ber: 220929
an Semicon
ation (ESIA)
ber: 22092
ation Techno
ber : 06160
Association
es
Business Co
ber: 683685
Business Ma
Industries
ber: 246330
Electronics a
logy Indust
)
ber: 519590
Electrical Ma
ation (JEMA
gEurope
ber 297892
merica Euro
ber: 230683
Machinery
F)
082072-33
Componen
A)
908193-23
nductor Indu
)
908193-23
ology Indus
01915428-8
Connecting
ouncil in Eu
571120-55
achine and
Association
0915180-10
and Informa
ries Associa
0015267-92
anufacturer
A)
243712-03
ope (TAE)
36892-93
16/01/
Industry
nts Industry
ustry
stry Council
87
g Electronics
urope (JBCE
Information
n (JBMIA )
0
ation
ation
2
rs´
/2015 – Page
s
E)
n
2 of 18
Zentralv
Elektron
ID numb
Avago T
2
2. R
Please
N
Pr
Le
in
Sa
verband Ele
nikindustrie
ber is 9477
Technologie
2) Name a
(if diffe
Company:
Name:
Function:
Reason f
indicate wh
Request f
Request f
Request f
Request f
Provision
A
o. of exemp
roposed or
ead in PZT
ntegrated c
ame as cur
ektrotechnik
e. V. (ZVE
0746469-09
es Ltd
and contac
rent from a
for applic
here relevan
for new exe
for amendm
for extensio
for deletion
of informat
Annex III
ption in Ann
existing wo
T based die
circuits or d
rent wordin
16/01/
k- und
I)
9
ct details of
above):
cation:
nt:
emption in:
ment of exist
on of existin
of existing
tion referring
nex III or IV
ording:
electric ce
discrete se
g:
/2015 – Page
f responsib
ting exempt
g exemptio
exemption
g to an exis
Anne
where appl
ramic mate
miconduct
3 of 18
ble person
Tel.:
E-Mail:
Address:
tion in
n
in:
sting specifi
ex IV
licable:
erials for c
tors.
for this ap
c exemption
7(c)-IV
capacitors
pplication
n in:
which aree part of
16/01/2015 – Page 4 of 18
PZT description:
PZT designates Lead Zirconium Titanate which is an intermetallic inorganic
compound with the chemical formula Pb[ZrxTi1-x]O3 (0≤x≤1). It is a white solid that is
insoluble in all solvents. Such compound is a ceramic perovskite material that shows
the following remarkable properties:
- a marked piezoelectric effect, which finds practical applications in the area of
electroceramics
- a high dielectric constant especially which can range from 300 to 3850
depending upon orientation and doping, the material featuring an extremely large
dielectric constant at the morphotropic phase boundary near x = 0.52
- being pyroelectric, this material develops a voltage difference across two of its
faces when it experiences a temperature change. As a result, it can be used as a
heat sensor
- it is also ferroelectric, which means it has a spontaneous electric polarization
(electric dipole) which can be reversed in the presence of an electric field.
Duration where applicable:
We apply for renewal of this exemption for categories 1 to 7, 10 and 11 of Annex I for
an additional validity period of 5 years. For these categories, the validity of this
exemption may be required beyond this timeframe. Although applications in this
exemption renewal request may be relevant to categories 8 & 9, this renewal request
does not address these categories. Further, categories 8 & 9 have separate maximum
validity periods and time limits for application for renewals.
Other: Background:
While exemption 7c of the Annex to the RoHS Directive would no longer cover the use
of Lead in low voltage applications in the 2011 review, an exemption was requested in
2010 since FRAMS (Ferroelectric Random Access Memory) and MIM
(Metal/Insulator/Metal) capacitors using PZT-based dielectric ceramic materials may be
operated in the low voltage area. This is the reason of this recent exemption 7(c)-IV.
This exemption was justified with the following arguments:
1) Lead-zirconium-titanate (PZT) material has the highest known dielectric
constant (εr = 1000 – 1200) and thus can be used as a planar
Metal/Insulator/Metal (MIM) capacitor with a breakdown voltage of more than 100
V. No alternative to PZT is currently known for thin film capacitors and
Ferroelectric Random Access Memory (F-RAM) memories that achieves the same
combination of high dielectric constant, high breakdown field and temperature
stability of 20% in a temperature range from -25 to +85 °C. This combination of
properties is indispensable to realize capacitors as parts of integrated circuits and
discrete semiconductors.
16/01/2015 – Page 5 of 18
2) Alternatives to PZT based dielectric ceramic capacitors are not available. Trench
capacitors have a breakdown of less than 30 V only, no MIM is possible. Other
potential alternatives such as Barium-Strontium-Titanate (BST) have only half
the dielectric constant, which results in much larger devices that do not meet the
size dimensions of semiconductor applications. Performance characteristics with
alternatives are severely degraded. These potential alternative techniques (trench-
or BST-capacitors) are not able to fulfil the electric requirements that are needed
for such applications, a high breakdown voltage and low internal resistance at low
leakage currents and high capacitance values. New materials without Pb will have
to be invented.
3) Within the dielectric circuit element of the capacitor, the level of lead content is
very low. The amount of lead introduced into the EU per year is in the order of 25-
30kg for the considered ROHS applications. Lead in PZT in this case is present in
trace amounts.
3. Summary of the exemption request / revocation request
Renewal of Exemption No. 7(c)-IV for thin film PZT deposited on semiconductor
devices as stated above.
Note:
IPD: Integrated Passive Device
FeRAM or FRAM: Ferroelectric Random Access Memory.
FRAM module - Courtesy of Texas Instruments
IPD on silicon - Courtesy of STMicroelectronics
16/01/2015 – Page 6 of 18
4. Technical description of the exemption request / revocation request
(A) Description of the concerned application:
1. To which EEE is the exemption request/information relevant?
Name of applications or products:
Integrated circuits or discrete components that include dielectric ceramic
materials for capacitors.
a. List of relevant categories: (mark more than one where applicable)
1 7
2 8
3 9
4 10
5 11
6
b. Please specify if application is in use in other categories to which the
exemption request does not refer:
Although applications in this exemption renewal request may be relevant to
categories 8 & 9, this renewal request does not address these categories.
Therefore, we have not completed section 4(A)1.c. Further, categories 8 & 9
have separate maximum validity periods and time limits for application for
renewals.
c. Please specify for equipment of category 8 and 9:
The requested exemption will be applied in
monitoring and control instruments in industry
in-vitro diagnostics
other medical devices or other monitoring and control instruments than
those in industry
n/a
2. Which of the six substances is in use in the application/product?
(Indicate more than one where applicable)
Pb Cd Hg Cr-VI PBB PBDE
3. Function of the substance:
Dielectric material with specific properties for high density capacitors.
4. Content of substance in homogeneous material (%weight):
< 1% of the semiconductor die taken as homogeneous material
16/01/2015 – Page 7 of 18
5. Amount of substance entering the EU market annually through application for
which the exemption is requested: < 27.5 kg / year (superior limit)
Please supply information and calculations to support stated figure.
Calculation:
The Yole production forecast 2012-2018 for IPDs, FeRAMs and MEMS
(Micro Electro Mechanical System) combined in number of 6’’ eq. wafers
shipped for the thin film PZT market represents 578,000 (6’’ eq.) in 2012 and
is estimated to be 533,700 (6’’ eq.) wafers by 2018.
Based on this forecast, a yearly worldwide average estimation over 2014-2020
can be set at 550,000 wfs (6’’ eq.) /year, including MEMS.
Estimated weight Pb x 6” wafers: 50 mg maximum (superior limit)
Estimated weight Pb in devices annually sold to market: 550,000 x 50 mg ~
27,5 kg for the worldwide market.
The amount of substance entering the EU market annually through application
for which the exemption is requested is much inferior to 27,5 kg while this
result applies to the global market, includes the MEMS and bounds from
above the mass of PZT deposited on the wafers.
6. Name of material/component:
Material: Lead Zirconium Titanate also called PZT, an intermetallic inorganic
compound with the chemical formula Pb[ZrxTi1-x]O3 (0≤x≤1), see description
in paragraph 2.
Components: Integrated Circuits or Discrete Semiconductors for
application categories 1 through 7, 10 & 11 listed in annex I of current ROHS
directive.
7. Environmental Assessment:
LCA: Yes
No
After the manufacturing process, the PZT is bound in a crystalline and
insoluble form. When the components are assembled on the printed circuit
board of the application, the PZT will never be released.
According to our current knowledge, the functionality and long lifetime
guaranteed for the components made with PZT cannot be achieved with any
alternative substance or mixture of substances.
((B) In whic
for wh
of this
Pb is p
below,
device
Source: 2
Pb is a
Sources:
ch material
ich you req
material o
present on
including b
es and othe
2013 Yole report
lso present
: Switch Science
16/01/
l and/or co
quest the e
or compone
PZT thin-f
but not lim
er applicati
t "Thin Film PZT
in PZT thin
e, Egloos, Texa
/2015 – Page
omponent i
exemption
ent?
film techno
ited to cap
ons as sho
T for Semicondu
n-film used f
as Instruments,
8 of 18
s the RoHS
or its revo
logies such
pacitors em
own below:
uctor"
for FeRAMs
Cypress Semic
S-regulated
cation? W
h as the ex
bedded in
s memorie
onductor, Fujits
d substanc
hat is the f
xamples pr
filters for w
es as shown
su (Internet)
ce used,
function
resented
wireless
n below:
((C) What a
substa
PZT is
relative
The Ök
there a
materia
on silic
levels.
PZT is
unique
The Ö
ceramic
permitt
the ferr
reliable
And als
are the part
ance that re
used in IPD
e dielectric c
ko Institut
are no altern
al to integra
con to ensu
Trench- an
also used
combined
ko Institut
cs based o
tivity and te
rroelectric a
e and are ea
so:
16/01/
ticular cha
equire its u
Ds for as a
constant of
e stakeho
natives for
ate highest
ure best fil
d BST-capa
in ferroel
properties o
te stakeho
on PZT offe
emperature
advantageou
asy to manu
/2015 – Page
aracteristic
use in this
very high d
PZT as a p
lder 28/07/
integrated M
capacitanc
lter- and E
acitors cann
ectric thin
outperformi
older 28/07
er the comb
stability to
us propertie
ufacture."
9 of 18
s and func
material or
density diele
processable
/2010 repo
MIM like PZ
ce density w
ESD-perform
not fulfil the
films dep
ng existing
7/2010 repo
bination of h
realize sili
es of FRAM
ctions of th
r compone
ectric mater
material.
ort conclude
ZT capacito
with high b
mance at lo
requiremen
posited on s
technologie
ort states t
high breakd
icon integra
Ms. These
he RoHS-re
nt?
rial, with the
es that "tec
ors. PZT is
breakdown
ow leakage
nts."
silicon chip
es.
that "only
down voltag
ated capaci
devices ar
egulated
e highest
chnically
the only
voltages
e current
ps for its
thin film
ges, high
tors and
re highly
5. If
1
Informatifrom EEE
1) Please
exists
to ensu
Articles
manufa
directly
Note: S
disman
Curren
as sepa
be via d
The rem
1) colle
2) colle
exporte
3) dispo
Referen
on on PoE and on
e indicate i
and provid
ure closed
s object of
acturers wh
y involved th
Some end
ntled for valu
tly one third
arately colle
destinations
maining WE
ected by unr
ected by un
ed abroad o
osed of as
nce: Eurost
16/01/2
ossible prprovision
f a closed
de informa
loop, meth
f this exem
hich are no
he EEE was
products ar
uable mate
d of WEEE
ected and a
s outside th
EEE are eith
registered e
nregistered
or
part of resid
tat
2015 – Page 1
reparations for app
loop syst
ation of its
hod of trea
mption are
ot the man
ste.
re recycled
rial collectio
in the EU i
appropriatel
e Member S
her:
enterprises
enterprises
dual waste
10 of 18
n for reuspropriate
em exist fo
s character
atment, etc
e not end
ufacturers
and/or ref
on such as
s being rep
ly managed
State of orig
and proper
s and impro
(e.g. to land
se or rec treatmen
or EEE wa
ristics (me
.)
products
of the end
furbished. S
metals, or la
ported by co
d (note that
gin).
rly treated
operly treat
dfill or incine
cycling ofnt of wast
aste of app
thod of co
and as su
d products,
Some mate
andfilled.
ompliance s
some of th
ed or even
erators).
f waste te
plication
ollection
uch, the
are not
rials are
schemes
his might
illegally
16/01/2015 – Page 11 of 18
http://epp.eurostat.ec.europa.eu/portal/page/portal/waste/key_waste_streams/wa
ste_electrical_electronic_equipment_weee
In general there is no closed loop system, just on-customer basis related to
specific sectors.
2) Please indicate where relevant:
Article is collected and sent without dismantling for recycling
Article is collected and completely refurbished for reuse
Article is collected and dismantled:
The following parts are refurbished for use as spare parts:
The following parts are subsequently recycled:
Article cannot be recycled and is therefore:
Sent for energy return
Landfilled
Articles object of this exemption are not end products and as such therefore
answering to this question is irrelevant
Note: Some EEE are recycled and/or refurbished. Some Equipment are disposed
as part of residual waste (e.g. to landfill or incinerators).
3) Please provide information concerning the amount (weight) of RoHS sub-
stance present in EEE waste accumulates per annum:
In articles which are refurbished
In articles which are recycled
In articles which are sent for energy return
In articles which are landfilled
Note: while the total content of Lead in EE products put on the worldwide market
in 2013 can be estimated at around 9,000 t, the estimated superior limit of Pb in
devices with PZT thin film components is 27.5 kg, representing annually not more
than about 3 ppm of the total weight of Lead introduced on the worldwide market.
16/01/2015 – Page 12 of 18
6. Analysis of possible alternative substances
(A) Please provide information if possible alternative applications or
alternatives for use of RoHS substances in application exist. Please
elaborate analysis on a life-cycle basis, including where available
information about independent research, peer-review studies
development activities undertaken
No possible alternative substance matching PZT dielectric properties can be
found in the current state of material physics knowledge.
See section 7(B) and the following reports:
- Öko-institute Final report - revised version - Freiburg, 28 July 2010:
"Adaptation to scientific and technical progress of Annex II to Directive
2000/53/EC (ELV) and of the Annex to Directive 2002/95/EC (RoHS)"
- Yole: "Thin Film PZT for Semiconductor - Application trends &Technology
update (FeRAM, IPDs and MEMS)" – 2013
(B) Please provide information and data to establish reliability of possible
substitutes of application and of RoHS materials in application
n/a (no possible substitute)
7. Proposed actions to develop possible substitutes
(
(
(A) Pleas
possi
subst
The
altern
conclu
voltag
The Ö
(B) Pleas
subst
stage
Subst
The S
suppl
prope
se provide
ible alterna
tances in t
Yole Thin
natives (bot
udes on a
ge (see belo
Öko-institute
se elaborat
titute and r
es.
titute mater
Semiconduc
iers on th
erties of the
16/01/2
informatio
atives for th
he applicat
Film PZT
th identify
trade-off be
ow).
e Final repo
te what sta
respective
ials:
ctor Industr
he selection
needed ca
2015 – Page 1
n if actions
he applicat
tion.
T for Semi
a new ma
etween the
ort, conclude
ges are ne
timeframe
ry is worki
n of an a
apacitance a
13 of 18
s have bee
tion or alte
iconductor
aterial and
capacitanc
es for its pa
ecessary fo
e needed fo
ng indepen
appropriate
and piezoel
en taken to
ernatives fo
report, wh
develop a
ce density a
art:
or establish
or completi
ndently with
replaceme
lectricity ma
develop fu
or RoHS
hile indicat
a new tech
and the bre
hment of po
on of such
h selected
ent for PZ
aterial are s
urther
ting two
hnology),
eakdown
ossible
h
material
ZT. The
specified
by the
suppl
by on
evalu
is froz
throug
Indus
Semic
mater
Devel
Stront
issues
Howe
reluct
Comp
Instru
Ope
Tem
Lon
End
Rela
diele
[1] r/w[2] ME
[3] Sc
Memo
Subst
Trenc
integr
e industry (m
iers. Select
ne of the co
ated by the
zen, a min
gh the who
try cannot
conductor i
rials and ev
lopment of
tium Bismu
s with Pb
ever, SBT a
tance to swi
parative tab
uments):
erating
mperature
gevity
urance
ative
ectric K
w = read/writeEMS,Dec 19
cott, J.F., “H
ories (DRAM)
titute techno
ch (MOS) ca
rated capac
16/01/2
material req
ted materia
ompanies to
e industry. A
imum of 6
ole supply c
t predict
ndustry is
valuating oth
BST - Bar
th tantalite
in PZT is
and BST ha
itch to SBT
ble betwee
P
-40C to +
≥ 40 yea
1E12 r/w
1700 [2]
e 995,Vol.4,No.
High-dielectr
),” Annu. Re
ologies:
apacitors co
citors.
2015 – Page 1
quirement s
l suppliers
ogether with
After a mate
6 years will
chain. Base
a date f
already eng
her in-house
rium Stronti
(SrBi2Ta2O
considered
ave a 2x low
and BST.
n PZT and
PZT
+125C
ars
w [1] cycles
.4, p.234
ric Constant
v. Mater. Sci
ould be a p
14 of 18
specification
offer their m
h the suppli
erial is chos
l be require
ed on curre
for custom
gaged on e
e material s
um titanate
O9) - mater
d, but no fi
wer perform
d BST bas
BS
-10C to +8
~10 years
1E9 r/w cy
500 [3]
t Thin Films
i. 1998. 28:7
potential alte
n) and prov
materials, w
ers. The co
sen and ma
ed to qualif
ent status,
mer sampli
evaluating d
synthesis as
e (Ba1-xSrx
ials in orde
xed timelin
mance than
sed capacit
ST
85C
s
ycles
s for Dynam
79–100
ernative to
ided to the
which are ev
ombined res
aterial deve
fy the new
the Semico
ng. Howev
different alt
s well.
xTiO3) - an
r to solve th
ne can be
n PZT so th
tors (source
Requirem
-40C to +12
>40 years
Unlimited c
Highest Pos
mic Random
high-densit
material
valuated
sults are
elopment
material
onductor
ver the
ternative
d SBT -
he RoHs
defined.
here is a
e Texas
ments
25C
ycles
ssible
m Access
ty silicon
Wher
Source:
Howe
And to
Also,
techn
Yole c
e Does IPD
: 2013 Yole repo
ever, accord
o the Öko In
relatively
ology is an
conclusions
16/01/2
D Technolog
ort "Thin Film P
ding to Yole
nstitute:
to costs,
expensive
s on other p
2015 – Page 1
gies Fit in T
PZT for Semicon
:
according
alternative
piezo materi
15 of 18
erms of De
nductor"
to Yole r
to PZT thin
ials are:
nsity Versu
report (pag
n film techno
s Applicatio
ge 75), 3D
ology.
on?
D trench
8. J
(
(
Justificat
(A) Links t
1) Do
(A) a
[1] L
Lea
No r
by m
used
2) Prov
Nam
(B) Elimina
1. Can the
See rep
tion acco
to REACH:
any of the
and (C)?
Authorisa
Lead Titan
d Titanium
Restrictio
Registrat
registration
much less th
d or produc
vide REACH
me of docum
ation/subs
e substance
Yes. C
No. J
ports stated
16/01/2
ording to A
(substanc
following p
ation
SVHC [1
Candida
Proposa
Annex X
ium Zirconi
Trioxide / E
on
Annex X
Registry
tion
is required
han 1 ton/y
ced annually
H-relevant i
ment: None
stitution:
e named un
Consequen
Justification
d in section
2015 – Page 1
Article 5(
ce + substit
provisions a
1]
ate list [1]
al inclusion A
XIV
ium Oxide
EC 235-038
XVII
of intention
d while PZT
y in the scop
y by the EU
information
.
nder 4.(A)2
ces?
n: No substit
6. (A) and r
16 of 18
(1)(a):
tute)
apply to the
Annex XIV
/ EC 235-7
-9 / CAS 12
ns
T is produce
pe of exem
market).
received th
be eliminat
tutes with re
relayed extr
e applicatio
727-4 / CA
2060-00-3.
ed with the
mption 7cIV
hrough the s
ted?
equired pro
racts inserte
on describe
AS 12626-8
article and/
(27.5 kg su
supply chai
operties exis
ed in this fo
ed under
81-2 and
/or used
ubstance
n.
st.
orm.
16/01/2015 – Page 17 of 18
2. Can the substance named under 4.(A)2 be substituted?
Yes.
Design changes:
Other materials:
Other substance:
No.
Justification: No substitutes with required properties exist.
See reports stated in section 6. (A) and related extracts inserted in this form.
3. Give details on the reliability of substitutes (technical data + information): n/a
4. Describe environmental assessment of substance from 4.(A)1 and possible
substitutes with regard to
1) Environmental impacts: n/a
2) Health impacts: n/a
3) Consumer safety impacts: n/a
Do impacts of substitution outweigh benefits there of?
Please provide third-party verified assessment on this: n/a
(C) Availability of substitutes:
a) Describe supply sources for substitutes: n/a
b) Have you encountered problems with the availability? Describe: n/a
c) Do you consider the price of the substitute to be a problem for the
availability?
Yes No (n/a)
d) What conditions need to be fulfilled to ensure the availability?
Same physical dielectric and ferroelectric properties.
(D) Socio-economic impact of substitution:
What kind of economic effects do you consider related to substitution?
No substitute available with similar physical properties
Increase in direct production costs
Increase in fixed costs
Increase in overhead
Possible social impacts within the EU
Possible social impacts external to the EU
Other:
16/01/2015 – Page 18 of 18
Provide sufficient evidence (third-party verified) to support your statement:
See reports stated in section 6. (A)
9. Other relevant information
Please provide additional relevant information to further establish the necessity of
your request:
No substitute material with equivalent physical properties.
10. Information that should be regarded as proprietary
Please state clearly whether any of the above information should be regarded to as
proprietary information. If so, please provide verifiable justification: n/a
Recommended