18
Exem Date of 1. N 1 C N F America EU (Am ID numb Commu Associa Europea Radiolo Healthc ID Num DIGITA ID numb Europea (Ceram ID numb Europea Equipm ID numb mption R submission Name and 1) Name a Company: Name: Function: With sup an Chambe mCham EU) ber: 526578 unications a ation of Japa an Coordina ogical, Elect care IT Indu ber – 05366 ALEUROPE ber: 642707 an Ceramic e-Unie) ber: 794650 an Committ ent Manufa ber: 042014 Reques n: January 1 d contact and contac STMicroe Chapuis F Quality Sustaina pport from: er of Comme 80509-97 and Informat an (CIAJ) ation Comm romedical a stry (COCIR 6537746-69 747023-20 c Industry A 004946-12 tee of Dome acturers (CE 463642-88 t Form 16, 2015 t details ct details of electronics Frédéric Mgmt Sys ble Dvlpt M erce to the tion networ mittee of the and R) 9 Association estic ECED) 1 – Exem f applicant T E stem & anager A k e mption 7 : Tel.: E-Mail: Address: 7(c)-IV +33-24742 frederic.ch msds@st.c Rue Thale 37071 Tour 24154 apuis@st.c com s de Milet rs France com

Exem ption Reques t Form – Exem ption 7 (c)-IVrohs.exemptions.oeko.info/fileadmin/user_upload/RoHS... ·  · 2015-07-30Amount of substance entering the EU market annually through

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Exem

Date of

1. N

1

C

N

F

America

EU (Am

ID numb

Commu

Associa

Europea

Radiolo

Healthc

ID Num

DIGITA

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Europea

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mption R

submission

Name and

1) Name a

Company:

Name:

Function:

With sup

an Chambe

mCham EU)

ber: 526578

unications a

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ogical, Elect

care IT Indu

ber – 05366

ALEUROPE

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an Ceramic

e-Unie)

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Frédéric

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7(c)-IV

+33-24742

frederic.ch

[email protected]

Rue Thale

37071 Tour

24154

[email protected]

com

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Technologie

2) Name a

(if diffe

Company:

Name:

Function:

Reason f

indicate wh

Request f

Request f

Request f

Request f

Provision

A

o. of exemp

roposed or

ead in PZT

ntegrated c

ame as cur

ektrotechnik

e. V. (ZVE

0746469-09

es Ltd

and contac

rent from a

for applic

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for new exe

for amendm

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Annex III

ption in Ann

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cation:

nt:

emption in:

ment of exist

on of existin

of existing

tion referring

nex III or IV

ording:

electric ce

discrete se

g:

/2015 – Page

f responsib

ting exempt

g exemptio

exemption

g to an exis

Anne

where appl

ramic mate

miconduct

3 of 18

ble person

Tel.:

E-Mail:

Address:

tion in

n

in:

sting specifi

ex IV

licable:

erials for c

tors.

for this ap

c exemption

7(c)-IV

capacitors

pplication

n in:

which aree part of

16/01/2015 – Page 4 of 18

PZT description:

PZT designates Lead Zirconium Titanate which is an intermetallic inorganic

compound with the chemical formula Pb[ZrxTi1-x]O3 (0≤x≤1). It is a white solid that is

insoluble in all solvents. Such compound is a ceramic perovskite material that shows

the following remarkable properties:

- a marked piezoelectric effect, which finds practical applications in the area of

electroceramics

- a high dielectric constant especially which can range from 300 to 3850

depending upon orientation and doping, the material featuring an extremely large

dielectric constant at the morphotropic phase boundary near x = 0.52

- being pyroelectric, this material develops a voltage difference across two of its

faces when it experiences a temperature change. As a result, it can be used as a

heat sensor

- it is also ferroelectric, which means it has a spontaneous electric polarization

(electric dipole) which can be reversed in the presence of an electric field.

Duration where applicable:

We apply for renewal of this exemption for categories 1 to 7, 10 and 11 of Annex I for

an additional validity period of 5 years. For these categories, the validity of this

exemption may be required beyond this timeframe. Although applications in this

exemption renewal request may be relevant to categories 8 & 9, this renewal request

does not address these categories. Further, categories 8 & 9 have separate maximum

validity periods and time limits for application for renewals.

Other: Background:

While exemption 7c of the Annex to the RoHS Directive would no longer cover the use

of Lead in low voltage applications in the 2011 review, an exemption was requested in

2010 since FRAMS (Ferroelectric Random Access Memory) and MIM

(Metal/Insulator/Metal) capacitors using PZT-based dielectric ceramic materials may be

operated in the low voltage area. This is the reason of this recent exemption 7(c)-IV.

This exemption was justified with the following arguments:

1) Lead-zirconium-titanate (PZT) material has the highest known dielectric

constant (εr = 1000 – 1200) and thus can be used as a planar

Metal/Insulator/Metal (MIM) capacitor with a breakdown voltage of more than 100

V. No alternative to PZT is currently known for thin film capacitors and

Ferroelectric Random Access Memory (F-RAM) memories that achieves the same

combination of high dielectric constant, high breakdown field and temperature

stability of 20% in a temperature range from -25 to +85 °C. This combination of

properties is indispensable to realize capacitors as parts of integrated circuits and

discrete semiconductors.

16/01/2015 – Page 5 of 18

2) Alternatives to PZT based dielectric ceramic capacitors are not available. Trench

capacitors have a breakdown of less than 30 V only, no MIM is possible. Other

potential alternatives such as Barium-Strontium-Titanate (BST) have only half

the dielectric constant, which results in much larger devices that do not meet the

size dimensions of semiconductor applications. Performance characteristics with

alternatives are severely degraded. These potential alternative techniques (trench-

or BST-capacitors) are not able to fulfil the electric requirements that are needed

for such applications, a high breakdown voltage and low internal resistance at low

leakage currents and high capacitance values. New materials without Pb will have

to be invented.

3) Within the dielectric circuit element of the capacitor, the level of lead content is

very low. The amount of lead introduced into the EU per year is in the order of 25-

30kg for the considered ROHS applications. Lead in PZT in this case is present in

trace amounts.

3. Summary of the exemption request / revocation request

Renewal of Exemption No. 7(c)-IV for thin film PZT deposited on semiconductor

devices as stated above.

Note:

IPD: Integrated Passive Device

FeRAM or FRAM: Ferroelectric Random Access Memory.

FRAM module - Courtesy of Texas Instruments

IPD on silicon - Courtesy of STMicroelectronics

16/01/2015 – Page 6 of 18

4. Technical description of the exemption request / revocation request

(A) Description of the concerned application:

1. To which EEE is the exemption request/information relevant?

Name of applications or products:

Integrated circuits or discrete components that include dielectric ceramic

materials for capacitors.

a. List of relevant categories: (mark more than one where applicable)

1 7

2 8

3 9

4 10

5 11

6

b. Please specify if application is in use in other categories to which the

exemption request does not refer:

Although applications in this exemption renewal request may be relevant to

categories 8 & 9, this renewal request does not address these categories.

Therefore, we have not completed section 4(A)1.c. Further, categories 8 & 9

have separate maximum validity periods and time limits for application for

renewals.

c. Please specify for equipment of category 8 and 9:

The requested exemption will be applied in

monitoring and control instruments in industry

in-vitro diagnostics

other medical devices or other monitoring and control instruments than

those in industry

n/a

2. Which of the six substances is in use in the application/product?

(Indicate more than one where applicable)

Pb Cd Hg Cr-VI PBB PBDE

3. Function of the substance:

Dielectric material with specific properties for high density capacitors.

4. Content of substance in homogeneous material (%weight):

< 1% of the semiconductor die taken as homogeneous material

16/01/2015 – Page 7 of 18

5. Amount of substance entering the EU market annually through application for

which the exemption is requested: < 27.5 kg / year (superior limit)

Please supply information and calculations to support stated figure.

Calculation:

The Yole production forecast 2012-2018 for IPDs, FeRAMs and MEMS

(Micro Electro Mechanical System) combined in number of 6’’ eq. wafers

shipped for the thin film PZT market represents 578,000 (6’’ eq.) in 2012 and

is estimated to be 533,700 (6’’ eq.) wafers by 2018.

Based on this forecast, a yearly worldwide average estimation over 2014-2020

can be set at 550,000 wfs (6’’ eq.) /year, including MEMS.

Estimated weight Pb x 6” wafers: 50 mg maximum (superior limit)

Estimated weight Pb in devices annually sold to market: 550,000 x 50 mg ~

27,5 kg for the worldwide market.

The amount of substance entering the EU market annually through application

for which the exemption is requested is much inferior to 27,5 kg while this

result applies to the global market, includes the MEMS and bounds from

above the mass of PZT deposited on the wafers.

6. Name of material/component:

Material: Lead Zirconium Titanate also called PZT, an intermetallic inorganic

compound with the chemical formula Pb[ZrxTi1-x]O3 (0≤x≤1), see description

in paragraph 2.

Components: Integrated Circuits or Discrete Semiconductors for

application categories 1 through 7, 10 & 11 listed in annex I of current ROHS

directive.

7. Environmental Assessment:

LCA: Yes

No

After the manufacturing process, the PZT is bound in a crystalline and

insoluble form. When the components are assembled on the printed circuit

board of the application, the PZT will never be released.

According to our current knowledge, the functionality and long lifetime

guaranteed for the components made with PZT cannot be achieved with any

alternative substance or mixture of substances.

((B) In whic

for wh

of this

Pb is p

below,

device

Source: 2

Pb is a

Sources:

ch material

ich you req

material o

present on

including b

es and othe

2013 Yole report

lso present

: Switch Science

16/01/

l and/or co

quest the e

or compone

PZT thin-f

but not lim

er applicati

t "Thin Film PZT

in PZT thin

e, Egloos, Texa

/2015 – Page

omponent i

exemption

ent?

film techno

ited to cap

ons as sho

T for Semicondu

n-film used f

as Instruments,

8 of 18

s the RoHS

or its revo

logies such

pacitors em

own below:

uctor"

for FeRAMs

Cypress Semic

S-regulated

cation? W

h as the ex

bedded in

s memorie

onductor, Fujits

d substanc

hat is the f

xamples pr

filters for w

es as shown

su (Internet)

ce used,

function

resented

wireless

n below:

((C) What a

substa

PZT is

relative

The Ök

there a

materia

on silic

levels.

PZT is

unique

The Ö

ceramic

permitt

the ferr

reliable

And als

are the part

ance that re

used in IPD

e dielectric c

ko Institut

are no altern

al to integra

con to ensu

Trench- an

also used

combined

ko Institut

cs based o

tivity and te

rroelectric a

e and are ea

so:

16/01/

ticular cha

equire its u

Ds for as a

constant of

e stakeho

natives for

ate highest

ure best fil

d BST-capa

in ferroel

properties o

te stakeho

on PZT offe

emperature

advantageou

asy to manu

/2015 – Page

aracteristic

use in this

very high d

PZT as a p

lder 28/07/

integrated M

capacitanc

lter- and E

acitors cann

ectric thin

outperformi

older 28/07

er the comb

stability to

us propertie

ufacture."

9 of 18

s and func

material or

density diele

processable

/2010 repo

MIM like PZ

ce density w

ESD-perform

not fulfil the

films dep

ng existing

7/2010 repo

bination of h

realize sili

es of FRAM

ctions of th

r compone

ectric mater

material.

ort conclude

ZT capacito

with high b

mance at lo

requiremen

posited on s

technologie

ort states t

high breakd

icon integra

Ms. These

he RoHS-re

nt?

rial, with the

es that "tec

ors. PZT is

breakdown

ow leakage

nts."

silicon chip

es.

that "only

down voltag

ated capaci

devices ar

egulated

e highest

chnically

the only

voltages

e current

ps for its

thin film

ges, high

tors and

re highly

5. If

1

Informatifrom EEE

1) Please

exists

to ensu

Articles

manufa

directly

Note: S

disman

Curren

as sepa

be via d

The rem

1) colle

2) colle

exporte

3) dispo

Referen

on on PoE and on

e indicate i

and provid

ure closed

s object of

acturers wh

y involved th

Some end

ntled for valu

tly one third

arately colle

destinations

maining WE

ected by unr

ected by un

ed abroad o

osed of as

nce: Eurost

16/01/2

ossible prprovision

f a closed

de informa

loop, meth

f this exem

hich are no

he EEE was

products ar

uable mate

d of WEEE

ected and a

s outside th

EEE are eith

registered e

nregistered

or

part of resid

tat

2015 – Page 1

reparations for app

loop syst

ation of its

hod of trea

mption are

ot the man

ste.

re recycled

rial collectio

in the EU i

appropriatel

e Member S

her:

enterprises

enterprises

dual waste

10 of 18

n for reuspropriate

em exist fo

s character

atment, etc

e not end

ufacturers

and/or ref

on such as

s being rep

ly managed

State of orig

and proper

s and impro

(e.g. to land

se or rec treatmen

or EEE wa

ristics (me

.)

products

of the end

furbished. S

metals, or la

ported by co

d (note that

gin).

rly treated

operly treat

dfill or incine

cycling ofnt of wast

aste of app

thod of co

and as su

d products,

Some mate

andfilled.

ompliance s

some of th

ed or even

erators).

f waste te

plication

ollection

uch, the

are not

rials are

schemes

his might

illegally

16/01/2015 – Page 11 of 18

http://epp.eurostat.ec.europa.eu/portal/page/portal/waste/key_waste_streams/wa

ste_electrical_electronic_equipment_weee

In general there is no closed loop system, just on-customer basis related to

specific sectors.

2) Please indicate where relevant:

Article is collected and sent without dismantling for recycling

Article is collected and completely refurbished for reuse

Article is collected and dismantled:

The following parts are refurbished for use as spare parts:

The following parts are subsequently recycled:

Article cannot be recycled and is therefore:

Sent for energy return

Landfilled

Articles object of this exemption are not end products and as such therefore

answering to this question is irrelevant

Note: Some EEE are recycled and/or refurbished. Some Equipment are disposed

as part of residual waste (e.g. to landfill or incinerators).

3) Please provide information concerning the amount (weight) of RoHS sub-

stance present in EEE waste accumulates per annum:

In articles which are refurbished

In articles which are recycled

In articles which are sent for energy return

In articles which are landfilled

Note: while the total content of Lead in EE products put on the worldwide market

in 2013 can be estimated at around 9,000 t, the estimated superior limit of Pb in

devices with PZT thin film components is 27.5 kg, representing annually not more

than about 3 ppm of the total weight of Lead introduced on the worldwide market.

16/01/2015 – Page 12 of 18

6. Analysis of possible alternative substances

(A) Please provide information if possible alternative applications or

alternatives for use of RoHS substances in application exist. Please

elaborate analysis on a life-cycle basis, including where available

information about independent research, peer-review studies

development activities undertaken

No possible alternative substance matching PZT dielectric properties can be

found in the current state of material physics knowledge.

See section 7(B) and the following reports:

- Öko-institute Final report - revised version - Freiburg, 28 July 2010:

"Adaptation to scientific and technical progress of Annex II to Directive

2000/53/EC (ELV) and of the Annex to Directive 2002/95/EC (RoHS)"

- Yole: "Thin Film PZT for Semiconductor - Application trends &Technology

update (FeRAM, IPDs and MEMS)" – 2013

(B) Please provide information and data to establish reliability of possible

substitutes of application and of RoHS materials in application

n/a (no possible substitute)

7. Proposed actions to develop possible substitutes

(

(

(A) Pleas

possi

subst

The

altern

conclu

voltag

The Ö

(B) Pleas

subst

stage

Subst

The S

suppl

prope

se provide

ible alterna

tances in t

Yole Thin

natives (bot

udes on a

ge (see belo

Öko-institute

se elaborat

titute and r

es.

titute mater

Semiconduc

iers on th

erties of the

16/01/2

informatio

atives for th

he applicat

Film PZT

th identify

trade-off be

ow).

e Final repo

te what sta

respective

ials:

ctor Industr

he selection

needed ca

2015 – Page 1

n if actions

he applicat

tion.

T for Semi

a new ma

etween the

ort, conclude

ges are ne

timeframe

ry is worki

n of an a

apacitance a

13 of 18

s have bee

tion or alte

iconductor

aterial and

capacitanc

es for its pa

ecessary fo

e needed fo

ng indepen

appropriate

and piezoel

en taken to

ernatives fo

report, wh

develop a

ce density a

art:

or establish

or completi

ndently with

replaceme

lectricity ma

develop fu

or RoHS

hile indicat

a new tech

and the bre

hment of po

on of such

h selected

ent for PZ

aterial are s

urther

ting two

hnology),

eakdown

ossible

h

material

ZT. The

specified

by the

suppl

by on

evalu

is froz

throug

Indus

Semic

mater

Devel

Stront

issues

Howe

reluct

Comp

Instru

Ope

Tem

Lon

End

Rela

diele

[1] r/w[2] ME

[3] Sc

Memo

Subst

Trenc

integr

e industry (m

iers. Select

ne of the co

ated by the

zen, a min

gh the who

try cannot

conductor i

rials and ev

lopment of

tium Bismu

s with Pb

ever, SBT a

tance to swi

parative tab

uments):

erating

mperature

gevity

urance

ative

ectric K

w = read/writeEMS,Dec 19

cott, J.F., “H

ories (DRAM)

titute techno

ch (MOS) ca

rated capac

16/01/2

material req

ted materia

ompanies to

e industry. A

imum of 6

ole supply c

t predict

ndustry is

valuating oth

BST - Bar

th tantalite

in PZT is

and BST ha

itch to SBT

ble betwee

P

-40C to +

≥ 40 yea

1E12 r/w

1700 [2]

e 995,Vol.4,No.

High-dielectr

),” Annu. Re

ologies:

apacitors co

citors.

2015 – Page 1

quirement s

l suppliers

ogether with

After a mate

6 years will

chain. Base

a date f

already eng

her in-house

rium Stronti

(SrBi2Ta2O

considered

ave a 2x low

and BST.

n PZT and

PZT

+125C

ars

w [1] cycles

.4, p.234

ric Constant

v. Mater. Sci

ould be a p

14 of 18

specification

offer their m

h the suppli

erial is chos

l be require

ed on curre

for custom

gaged on e

e material s

um titanate

O9) - mater

d, but no fi

wer perform

d BST bas

BS

-10C to +8

~10 years

1E9 r/w cy

500 [3]

t Thin Films

i. 1998. 28:7

potential alte

n) and prov

materials, w

ers. The co

sen and ma

ed to qualif

ent status,

mer sampli

evaluating d

synthesis as

e (Ba1-xSrx

ials in orde

xed timelin

mance than

sed capacit

ST

85C

s

ycles

s for Dynam

79–100

ernative to

ided to the

which are ev

ombined res

aterial deve

fy the new

the Semico

ng. Howev

different alt

s well.

xTiO3) - an

r to solve th

ne can be

n PZT so th

tors (source

Requirem

-40C to +12

>40 years

Unlimited c

Highest Pos

mic Random

high-densit

material

valuated

sults are

elopment

material

onductor

ver the

ternative

d SBT -

he RoHs

defined.

here is a

e Texas

ments

25C

ycles

ssible

m Access

ty silicon

Wher

Source:

Howe

And to

Also,

techn

Yole c

e Does IPD

: 2013 Yole repo

ever, accord

o the Öko In

relatively

ology is an

conclusions

16/01/2

D Technolog

ort "Thin Film P

ding to Yole

nstitute:

to costs,

expensive

s on other p

2015 – Page 1

gies Fit in T

PZT for Semicon

:

according

alternative

piezo materi

15 of 18

erms of De

nductor"

to Yole r

to PZT thin

ials are:

nsity Versu

report (pag

n film techno

s Applicatio

ge 75), 3D

ology.

on?

D trench

8. J

(

(

Justificat

(A) Links t

1) Do

(A) a

[1] L

Lea

No r

by m

used

2) Prov

Nam

(B) Elimina

1. Can the

See rep

tion acco

to REACH:

any of the

and (C)?

Authorisa

Lead Titan

d Titanium

Restrictio

Registrat

registration

much less th

d or produc

vide REACH

me of docum

ation/subs

e substance

Yes. C

No. J

ports stated

16/01/2

ording to A

(substanc

following p

ation

SVHC [1

Candida

Proposa

Annex X

ium Zirconi

Trioxide / E

on

Annex X

Registry

tion

is required

han 1 ton/y

ced annually

H-relevant i

ment: None

stitution:

e named un

Consequen

Justification

d in section

2015 – Page 1

Article 5(

ce + substit

provisions a

1]

ate list [1]

al inclusion A

XIV

ium Oxide

EC 235-038

XVII

of intention

d while PZT

y in the scop

y by the EU

information

.

nder 4.(A)2

ces?

n: No substit

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16/01/2015 – Page 17 of 18

2. Can the substance named under 4.(A)2 be substituted?

Yes.

Design changes:

Other materials:

Other substance:

No.

Justification: No substitutes with required properties exist.

See reports stated in section 6. (A) and related extracts inserted in this form.

3. Give details on the reliability of substitutes (technical data + information): n/a

4. Describe environmental assessment of substance from 4.(A)1 and possible

substitutes with regard to

1) Environmental impacts: n/a

2) Health impacts: n/a

3) Consumer safety impacts: n/a

Do impacts of substitution outweigh benefits there of?

Please provide third-party verified assessment on this: n/a

(C) Availability of substitutes:

a) Describe supply sources for substitutes: n/a

b) Have you encountered problems with the availability? Describe: n/a

c) Do you consider the price of the substitute to be a problem for the

availability?

Yes No (n/a)

d) What conditions need to be fulfilled to ensure the availability?

Same physical dielectric and ferroelectric properties.

(D) Socio-economic impact of substitution:

What kind of economic effects do you consider related to substitution?

No substitute available with similar physical properties

Increase in direct production costs

Increase in fixed costs

Increase in overhead

Possible social impacts within the EU

Possible social impacts external to the EU

Other:

16/01/2015 – Page 18 of 18

Provide sufficient evidence (third-party verified) to support your statement:

See reports stated in section 6. (A)

9. Other relevant information

Please provide additional relevant information to further establish the necessity of

your request:

No substitute material with equivalent physical properties.

10. Information that should be regarded as proprietary

Please state clearly whether any of the above information should be regarded to as

proprietary information. If so, please provide verifiable justification: n/a