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1
IPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
tab
12
3
DPAK
DrainPin 2, Tab
GatePin 1
SourcePin 3
MOSFET700VCoolMOSªP7PowerTransistorCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcostsensitiveapplicationsinconsumermarketssuchascharger,adapter,lighting,TV,etc.ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunctionMOSFET,combinedwithanexcellentprice/performanceratioandstateoftheartease-of-uselevel.Thetechnologymeetshighestefficiencystandardsandsupportshighpowerdensity,enablingcustomersgoingtowardsveryslimdesigns.
Features•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss•Excellentthermalbehavior•IntegratedESDprotectiondiode•Lowswitchinglosses(Eoss)•Qualifiedforstandardgradeapplications
Benefits•Costcompetitivetechnology•Lowertemperature•HighESDruggedness•Enablesefficiencygainsathigherswitchingfrequencies•Enableshighpowerdensitydesignsandsmallformfactors
ApplicationsRecommendedforFlybacktopologiesforexampleusedinChargers,Adapters,LightingApplications,etc.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 700 V
RDS(on),max 0.9 Ω
Qg,typ 6.8 nC
ID,pulse 12.8 A
Eoss @ 400V 0.9 µJ
V(GS)th,typ 3 V
ESD class (HBM) 1C
Type/OrderingCode Package Marking RelatedLinksIPD70R900P7S PG-TO 252 70S900P7 see Appendix A
2
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
1MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID --
--
63.5 A TC = 20°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 12.8 A TC=25°C
Application (Flyback) relevantavalanche current, single pulse3) IAS - - 3.6 A measured with standard leakage
inductance of transformer of 5µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage VGS-16-30
--
1630 V static;
AC (f>1 Hz)
Power dissipation Ptot - - 30.5 W TC=25°C
Operating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS - - 4.1 A TC=25°C
Diode pulse current2) IS,pulse - - 12.8 A TC = 25°C
Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction RthJC - - 4.1 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint
Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5 epoxyPCB FR4 with 6cm2 (one layer 70µmthickness) copper area for drainconnection and cooling. PCB isvertical without air stream cooling.
Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL3
1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
4
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
3Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.06mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=700V,VGS=0V,Tj=25°C
VDS=700V,VGS=0V,Tj=150°C
Gate-source leakage current incl. Zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.741.53
0.90- Ω VGS=10V,ID=1.1A,Tj=25°C
VGS=10V,ID=1.1A,Tj=150°C
Gate resistance RG - 1.6 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 211 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energyrelated1) Co(er) - 13 - pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) - 177 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω
Rise time tr - 4.7 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω
Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω
Fall time tf - 31 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 0.9 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate to drain charge Qgd - 2.6 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate charge total Qg - 6.8 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
5
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.4A,Tj=25°C
Reverse recovery time trr - 160 - ns VR=400V,IF=0.9A,diF/dt=50A/µs
Reverse recovery charge Qrr - 0.5 - µC VR=400V,IF=0.9A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.9A,diF/dt=50A/µs
6
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
5
10
15
20
25
30
35
40
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01single pulse
ZthJC=f(tP);parameter:D=tp/T
7
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
2
4
6
8
10
12
1420 V10 V8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
1
2
3
4
5
6
7
8
9
1020 V10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 5 10 150
1
2
3
4
5
6
5 V 5.5 V 6 V 6.5 V
7 V10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
98%
typ
RDS(on)=f(Tj);ID=1.1A;VGS=10V
8
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
2
4
6
8
10
12
14
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 2 4 6 80
1
2
3
4
5
6
7
8
9
10
400 V
120 V
VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
25 °C125 °C
IF=f(VSD);parameter:Tj
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175600
620
640
660
680
700
720
740
760
780
800
820
840
VBR(DSS)=f(Tj);ID=1mA
9
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 50010-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 500 600 7000.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
Eoss=f(VDS)
10
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
5TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
11
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
6PackageOutlines
2.5
REVISION
01
04-02-2016
ISSUE DATE
EUROPEAN PROJECTION
0
SCALE
5mm
0
2.5
DOCUMENT NO.
Z8B00180313
MILLIMETERS
4.57 (BSC)
2.29 (BSC)
L4
D
N
H
E1
e1
e
E
D1
L3
1.38
0.60
0.90
5.25
9.40
6.40
4.70
5.98
3
b3
A
DIM
b2
c
b
c2
A1
5.13
MIN
2.20
0.68
0.46
0.72
0.46
0.00
0.054
0.024
0.035
0.207
0.252
0.185
0.235
0.370
1.70
1.00
5.60
5.40
6.22
6.73
1.25
10.48
0.180 (BSC)
0.090 (BSC)
3
0.067
0.220
0.039
0.213
0.265
0.049
0.245
0.413
0.202
0.087
0.027
0.018
0.028
0.018
0.000
5.50
MAX
2.40
0.15
1.10
0.60
0.89
0.60
INCHES
MIN
0.217
MAX
0.006
0.094
0.035
0.024
0.043
0.024
L
Figure1OutlinePG-TO252,dimensionsinmm/inches
12
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSªP7Webpage:www.infineon.com
• IFXDesigntools:www.infineon.com
13
700VCoolMOSªP7PowerTransistorIPD70R900P7S
Rev.2.0,2016-11-24Final Data Sheet
RevisionHistoryIPD70R900P7S
Revision:2016-11-24,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-11-24 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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PublishedbyInfineonTechnologiesAG81726München,Germany©2016InfineonTechnologiesAGAllRightsReserved.
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