Datasheet IPD70R900P7S - Farnell3 700V CoolMOSª P7 Power Transistor IPD70R900P7S Final Data Sheet Rev. 2.0, 2016-11-24 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table

1

IPD70R900P7S

Rev.2.0,2016-11-24Final Data Sheet

tab

12

3

DPAK

DrainPin 2, Tab

GatePin 1

SourcePin 3

MOSFET700VCoolMOSªP7PowerTransistorCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcostsensitiveapplicationsinconsumermarketssuchascharger,adapter,lighting,TV,etc.ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunctionMOSFET,combinedwithanexcellentprice/performanceratioandstateoftheartease-of-uselevel.Thetechnologymeetshighestefficiencystandardsandsupportshighpowerdensity,enablingcustomersgoingtowardsveryslimdesigns.

Features•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss•Excellentthermalbehavior•IntegratedESDprotectiondiode•Lowswitchinglosses(Eoss)•Qualifiedforstandardgradeapplications

Benefits•Costcompetitivetechnology•Lowertemperature•HighESDruggedness•Enablesefficiencygainsathigherswitchingfrequencies•Enableshighpowerdensitydesignsandsmallformfactors

ApplicationsRecommendedforFlybacktopologiesforexampleusedinChargers,Adapters,LightingApplications,etc.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 700 V

RDS(on),max 0.9 Ω

Qg,typ 6.8 nC

ID,pulse 12.8 A

Eoss @ 400V 0.9 µJ

V(GS)th,typ 3 V

ESD class (HBM) 1C

Type/OrderingCode Package Marking RelatedLinksIPD70R900P7S PG-TO 252 70S900P7 see Appendix A

2

700VCoolMOSªP7PowerTransistorIPD70R900P7S


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

63.5 A TC = 20°C

TC = 100°C

Pulsed drain current2) ID,pulse - - 12.8 A TC=25°C

Application (Flyback) relevantavalanche current, single pulse3) IAS - - 3.6 A measured with standard leakage

inductance of transformer of 5µH

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V

Gate source voltage VGS-16-30

--

1630 V static;

AC (f>1 Hz)

Power dissipation Ptot - - 30.5 W TC=25°C

Operating and storage temperature Tj,Tstg -40 - 150 °C -

Continuous diode forward current IS - - 4.1 A TC=25°C

Diode pulse current2) IS,pulse - - 12.8 A TC = 25°C

Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C

Maximum diode commutation speed4) dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C

Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction RthJC - - 4.1 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5 epoxyPCB FR4 with 6cm2 (one layer 70µmthickness) copper area for drainconnection and cooling. PCB isvertical without air stream cooling.

Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL3

1) Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.52) Pulse width tp limited by Tj,max3) Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.4)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

4



3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA

Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.06mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=700V,VGS=0V,Tj=25°C

VDS=700V,VGS=0V,Tj=150°C

Gate-source leakage current incl. Zenerdiode IGSS - - 1 µA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.741.53

0.90- Ω VGS=10V,ID=1.1A,Tj=25°C

VGS=10V,ID=1.1A,Tj=150°C

Gate resistance RG - 1.6 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 211 - pF VGS=0V,VDS=400V,f=250kHz

Output capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 13 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 177 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω

Rise time tr - 4.7 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω

Turn-off delay time td(off) - 58 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω

Fall time tf - 31 - ns VDD=400V,VGS=13V,ID=0.9A,RG=5.3Ω

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 0.9 - nC VDD=400V,ID=0.9A,VGS=0to10V

Gate to drain charge Qgd - 2.6 - nC VDD=400V,ID=0.9A,VGS=0to10V

Gate charge total Qg - 6.8 - nC VDD=400V,ID=0.9A,VGS=0to10V

Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.9A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

5



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.4A,Tj=25°C

Reverse recovery time trr - 160 - ns VR=400V,IF=0.9A,diF/dt=50A/µs

Reverse recovery charge Qrr - 0.5 - µC VR=400V,IF=0.9A,diF/dt=50A/µs

Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.9A,diF/dt=50A/µs

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

5

10

15

20

25

30

35

40

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01single pulse

ZthJC=f(tP);parameter:D=tp/T

7



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

12

1420 V10 V8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

1

2

3

4

5

6

7

8

9

1020 V10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 5 10 150

1

2

3

4

5

6

5 V 5.5 V 6 V 6.5 V

7 V10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-50 -25 0 25 50 75 100 125 1500.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

98%

typ

RDS(on)=f(Tj);ID=1.1A;VGS=10V

8



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

2

4

6

8

10

12

14

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 2 4 6 80

1

2

3

4

5

6

7

8

9

10

400 V

120 V

VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102

25 °C125 °C

IF=f(VSD);parameter:Tj

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-75 -50 -25 0 25 50 75 100 125 150 175600

620

640

660

680

700

720

740

760

780

800

820

840

VBR(DSS)=f(Tj);ID=1mA

9



Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 7000.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

Eoss=f(VDS)

10



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

11



6PackageOutlines

2.5

REVISION

01

04-02-2016

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

0

2.5

DOCUMENT NO.

Z8B00180313

MILLIMETERS

4.57 (BSC)

2.29 (BSC)

L4

D

N

H

E1

e1

e

E

D1

L3

1.38

0.60

0.90

5.25

9.40

6.40

4.70

5.98

3

b3

A

DIM

b2

c

b

c2

A1

5.13

MIN

2.20

0.68

0.46

0.72

0.46

0.00

0.054

0.024

0.035

0.207

0.252

0.185

0.235

0.370

1.70

1.00

5.60

5.40

6.22

6.73

1.25

10.48

0.180 (BSC)

0.090 (BSC)

3

0.067

0.220

0.039

0.213

0.265

0.049

0.245

0.413

0.202

0.087

0.027

0.018

0.028

0.018

0.000

5.50

MAX

2.40

0.15

1.10

0.60

0.89

0.60

INCHES

MIN

0.217

MAX

0.006

0.094

0.035

0.024

0.043

0.024

L

Figure1OutlinePG-TO252,dimensionsinmm/inches

12



7AppendixA

Table11RelatedLinks

• IFXCoolMOSªP7Webpage:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/cms/en/product/promopages/designtools/index.html

http://www.infineon.com/p7

13



RevisionHistoryIPD70R900P7S

Revision:2016-11-24,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2016-11-24 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

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Documents

Datasheet IPD70R900P7S - Farnell3 700V CoolMOSª P7 Power Transistor IPD70R900P7S Final Data Sheet Rev. 2.0, 2016-11-24 1 Maximum ratings at Tj = 25 C, unless otherwise specified Table