View
212
Download
0
Category
Preview:
DESCRIPTION
4n25v
Citation preview
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan9986
Optocoupler with Phototransistor OutputDescriptionThe 4N25(G)V/ 4N35(G)V series consists of a photo-transistor optically coupled to a gallium arsenideinfrared-emitting diode in a 6-lead plastic dual inlinepackage. The elements are mounted on one leadframe usinga coplanar technique, providing a fixed distancebetween input and output for highest safetyrequirements.
ApplicationsCircuits for safe protective separation againstelectrical shock according to safety class II(reinforced isolation): For appl. class I IV at mains voltage 300 V For appl. class I III at mains voltage 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,computer peripheral interface, microprocessorsystem interface.
VDE StandardsThese couplers perform safety functions accordingto the following equipment standards:
VDE 0884 Optocoupler for electrical safety requirements IEC 950/EN 60950
Office machines (applied for reinforced isolationfor mains voltage 400 VRMS) VDE 0804
Telecommunication apparatus and dataprocessing IEC 65
Safety for mains-operated electronic and relatedhousehold apparatus
14827
6 5 4
2 31
C E
A (+) C () n.c.
95 1
0805
B
Order Instruction Ordering Code CTR Ranking Remarks
4N25V/ 4N25GV1) >20%4N35V/ 4N35GV1) >100%1)
G = Leadform 10.16 mm; G is not market on the body
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan99 87
Features Approvals: BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), Certificate number 7081 and 7402 FIMKO (SETI): EN 60950,
Certificate number 12399 Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 VDE 0884, Certificate number 94778
VDE 0884 related features: Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
Rated recurring peak voltage (repetitive) VIORM = 600 VRMS Creepage current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 Thickness through insulation 0.75 mm
General features: Isolation materials according to UL94-VO Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Special construction:
Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection Low temperature coefficient of CTR Coupling System A
Absolute Maximum RatingsInput (Emitter)
Parameter Test Conditions Symbol Value UnitReverse voltage VR 5 VForward current IF 60 mAForward surge current tp 10 s IFSM 3 APower dissipation Tamb 25C PV 100 mWJunction temperature Tj 125 C
Output (Detector)Parameter Test Conditions Symbol Value Unit
Collector emitter voltage VCEO 32 VEmitter collector voltage VCEO 7 VCollector current IC 50 mACollector peak current tp/T = 0.5, tp 10 ms ICM 100 mAPower dissipation Tamb 25C PV 150 mWJunction temperature Tj 125 C
CouplerParameter Test Conditions Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VIO 3.75 kVTotal power dissipation Tamb 25C Ptot 250 mWAmbient temperature range Tamb 55 to +100 CStorage temperature range Tstg 55 to +125 CSoldering temperature 2 mm from case, t 10 s Tsd 260 C
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan9988
Electrical Characteristics (Tamb = 25C)Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. UnitForward voltage IF = 50 mA
Tamb = 100CVF 1.2 1.4 V
Junction capacitance VR = 0, f = 1 MHz Cj 50 pF
Output (Detector)Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA VCEO 32 VEmitter collector voltage IE = 100 A VECO 7 VCollector emitter cut-offcurrent
VCE = 10 V, IF = 0, Tamb = 100C
ICEO 50 nA
VCE = 30 V, IF = 0, Tamb = 100C
ICEO 500 A
CouplerParameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter saturation voltage
IF = 50 mA, IC = 2 mA VCEsat 0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,RL = 100
fc 110 kHz
Coupling capacitance f = 1 MHz Ck 1 pF
Current Transfer Ratio (CTR)Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/IF VCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1C F CE F4N35(G)V CTR 1.00 1.5
VCE = 10 V, IF = 10 mA,Tamb = 100C
4N35(G)V CTR 0.40
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan99 89
Maximum Safety Ratings (according to VDE 0884) see figure 1This device is used for protective separation against electrical shock only within the maximum safety ratings.This must be ensured by using protective circuits in the applications.Input (Emitter)
Parameters Test Conditions Symbol Value UnitForward current Isi 130 mA
Output (Detector)Parameters Test Conditions Symbol Value Unit
Power dissipation Tamb 25C Psi 265 mW
CouplerParameters Test Conditions Symbol Value Unit
Rated impulse voltage VIOTM 6 kVSafety temperature Tsi 150
Insulation Rated Parameters (according to VDE 0884)Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage Routine test
100%, ttest = 1 s Vpd 1.6 kV
Partial discharge test voltage tTr = 60 s, ttest = 10 s, VIOTM 6 kVg gLot test (sample test)
Tr test(see figure 2) Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100C
RIO 1011
VIO = 500 V, Tamb = 150C (construction test only)
RIO 109
0 25 50 75 1250
50
100
150
200
300
P To
tal P
ower
Diss
ipat
ion
( mW
)
tot
Tsi Safety Temperature ( C )150
94 9182
100
250 PhototransistorPsi ( mW )
IR-DiodeIsi ( mA )
Figure 1. Derating diagram
VIOTM
VPd
VIOWMVIORM
V
t4t3 ttesttstrest2t1
t
0
13930
tTr = 60 s
t1, t2 = 1 to 10 st3, t4 = 1 sttest = 10 ststres = 12 s
Figure 2. Test pulse diagram for sample test according toDIN VDE 0884
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan9990
Switching Characteristics of 4N25(G)VParameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 5 mA, RL = 100 (see figure 3) td 4.0 sRise time
S C L ( g )tr 7.0 s
Fall time tf 6.7 sStorage time ts 0.3 sTurn-on time ton 11.0 sTurn-off time toff 7.0 sTurn-on time VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4) ton 25.0 sTurn-off time
S F L ( g )toff 42.5 s
Switching Characteristics of 4N35(G)VParameter Test Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 (see figure 3) td 2.5 sRise time
S C L ( g )tr 3.0 s
Fall time tf 4.2 sStorage time ts 0.3 sTurn-on time ton
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan99 91
Typical Characteristics (Tamb = 25C, unless otherwise specified)
0
50
100
150
200
250
300
0 40 80 120
P To
tal P
ower
Diss
ipat
ion
( mW
)
Tamb Ambient Temperature (C )
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs. Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0VF Forward Voltage ( V )96 11862
FI
For
war
d Cu
rrent
( mA
)
Figure 7. Forward Current vs. Forward Voltage
0.50.60.70.80.91.01.1
1.2
1.31.4
1.5
30 20 10 0 10 20 30 40 50 60 70 80Tamb Ambient Temperature ( C
)96 11874
CTR
Rel
ativ
e Cu
rrent
Tra
nsf
er R
atio
rel
VCE=10VIF=10mA
Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature
1
10
100
1000
10000
0 10 20 30 40 50 60 70 80 90 100Tamb Ambient Temperature ( C
)96 11875
I
C
olle
ctor
Dar
k Cu
rrent
,CE
O with
ope
n Ba
se ( n
A )
VCE=10VIF=0
Figure 9. Collector Dark Current vs. Ambient Temperature
0.001
0.010
0.100
1.000
1 10 100IF Forward Current ( mA )96 11876
I
Co
llect
or B
ase
Curre
nt ( m
A )
CB
VCB=10V
Figure 10. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1 1.0 10.0 100.0IF Forward Current ( mA )96 11904
VCE=10V
I
Col
lect
or C
urre
nt ( m
A )
C
Figure 11. Collector Current vs. Forward Current
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan9992
0.1
1.0
10.0
100.0
0.1 1.0 10.0 100.0VCE Collector Emitter Voltage ( V
)96 11905
I
Col
lect
or C
urre
nt ( m
A )
C
20mA
10mA
5mA
2mA
1mA
IF=50mA
Figure 12. Collector Current vs. Collector Emitter Voltage
1 100
0.2
0.4
0.6
0.8
1.0
V Co
llect
or E
mitt
er S
atur
atio
n Vo
ltage
( V )
CEsa
t
IC Collector Current ( mA )100
95 10972
CTR=50%
20%
10%
Figure 13. Collector Emitter Saturation Voltage vs. Collector Current
0.01 0.1 1 100
200
400
600
800
1000
h
D
C Cu
rrent
Gai
nFE
IC Collector Current ( mA )100
95 10973
VCE=10V
5V
Figure 14. DC Current Gain vs. Collector Current
0.1 1 101
10
100
1000
CTR
Cu
rrent
Tra
nsf
er R
atio
( % )
IF Forward Current ( mA )100
95 10976
VCE=20V
Figure 15. Current Transfer Ratio vs. Forward Current
0 5 10 150
10
20
30
40
50
IF Forward Current ( mA )20
95 10974
t /
t
T
urn
on /
Turn
off
Tim
e (
s )
off
on
Saturated OperationVS=5VRL=1k
toff
ton
Figure 16. Turn on / off Time vs. Forward Current
0 2 4 6IC Collector Current ( mA )
10
95 10975
t /
t
T
urn
on /
Turn
off
Tim
e (
s )
off
on
Non SaturatedOperationVS=10VRL=100
toff
ton
0
5
10
15
20
8
Figure 17. Turn on / off Time vs. Collector Current
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan99 93
XXXXXX
0884918 A TK 63
15090
Type
DateCode(YM)
CouplingSystem
Indicator
CompanyLogo
ProductionLocation
SafetyLogo
VD E
Figure 18. Marking example
Dimensions of 4N25G/ 4N35G in mm
14771
weight: ca. 0.50 gcreepage distance: 8 mmair path: 8 mm
after mounting on PC board
4N25(G)V/ 4N35(G)V SeriesVishay Telefunken
Rev. A4, 11Jan9994
Dimensions of 4N25/ 4N35 in mm
14770
weight: 0.50 gcreepage distance: 6 mmair path: 6 mm
after mounting on PC board
Recommended