Data Sheet

4N25(G)V/ 4N35(G)V SeriesVishay Telefunken

Rev. A4, 11Jan9986

Optocoupler with Phototransistor OutputDescriptionThe 4N25(G)V/ 4N35(G)V series consists of a photo-transistor optically coupled to a gallium arsenideinfrared-emitting diode in a 6-lead plastic dual inlinepackage. The elements are mounted on one leadframe usinga coplanar technique, providing a fixed distancebetween input and output for highest safetyrequirements.

ApplicationsCircuits for safe protective separation againstelectrical shock according to safety class II(reinforced isolation): For appl. class I IV at mains voltage 300 V For appl. class I III at mains voltage 600 V

according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,computer peripheral interface, microprocessorsystem interface.

VDE StandardsThese couplers perform safety functions accordingto the following equipment standards:

VDE 0884 Optocoupler for electrical safety requirements IEC 950/EN 60950

Office machines (applied for reinforced isolationfor mains voltage 400 VRMS) VDE 0804

Telecommunication apparatus and dataprocessing IEC 65

Safety for mains-operated electronic and relatedhousehold apparatus

14827

6 5 4

2 31

C E

A (+) C () n.c.

95 1

0805

B

Order Instruction Ordering Code CTR Ranking Remarks

4N25V/ 4N25GV1) >20%4N35V/ 4N35GV1) >100%1)

G = Leadform 10.16 mm; G is not market on the body


Rev. A4, 11Jan99 87

Features Approvals: BSI: BS EN 41003, BS EN 60095 (BS 415),

BS EN 60950 (BS 7002), Certificate number 7081 and 7402 FIMKO (SETI): EN 60950,

Certificate number 12399 Underwriters Laboratory (UL) 1577 recognized,

file number E-76222 VDE 0884, Certificate number 94778

VDE 0884 related features: Rated impulse voltage (transient overvoltage)

VIOTM = 6 kV peak Isolation test voltage

(partial discharge test voltage) Vpd = 1.6 kV Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS (848 V peak)

Rated recurring peak voltage (repetitive) VIORM = 600 VRMS Creepage current resistance according to

VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 Thickness through insulation 0.75 mm

General features: Isolation materials according to UL94-VO Pollution degree 2

(DIN/VDE 0110 part 1 resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Special construction:

Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection Low temperature coefficient of CTR Coupling System A

Absolute Maximum RatingsInput (Emitter)

Parameter Test Conditions Symbol Value UnitReverse voltage VR 5 VForward current IF 60 mAForward surge current tp 10 s IFSM 3 APower dissipation Tamb 25C PV 100 mWJunction temperature Tj 125 C

Output (Detector)Parameter Test Conditions Symbol Value Unit

Collector emitter voltage VCEO 32 VEmitter collector voltage VCEO 7 VCollector current IC 50 mACollector peak current tp/T = 0.5, tp 10 ms ICM 100 mAPower dissipation Tamb 25C PV 150 mWJunction temperature Tj 125 C

CouplerParameter Test Conditions Symbol Value Unit

Isolation test voltage (RMS) t = 1 min VIO 3.75 kVTotal power dissipation Tamb 25C Ptot 250 mWAmbient temperature range Tamb 55 to +100 CStorage temperature range Tstg 55 to +125 CSoldering temperature 2 mm from case, t 10 s Tsd 260 C


Rev. A4, 11Jan9988

Electrical Characteristics (Tamb = 25C)Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. UnitForward voltage IF = 50 mA

Tamb = 100CVF 1.2 1.4 V

Junction capacitance VR = 0, f = 1 MHz Cj 50 pF

Output (Detector)Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter voltage IC = 1 mA VCEO 32 VEmitter collector voltage IE = 100 A VECO 7 VCollector emitter cut-offcurrent

VCE = 10 V, IF = 0, Tamb = 100C

ICEO 50 nA

VCE = 30 V, IF = 0, Tamb = 100C

ICEO 500 A

CouplerParameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter saturation voltage

IF = 50 mA, IC = 2 mA VCEsat 0.3 V

Cut-off frequency VCE = 5 V, IF = 10 mA,RL = 100

fc 110 kHz

Coupling capacitance f = 1 MHz Ck 1 pF

Current Transfer Ratio (CTR)Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/IF VCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1C F CE F4N35(G)V CTR 1.00 1.5

VCE = 10 V, IF = 10 mA,Tamb = 100C

4N35(G)V CTR 0.40


Rev. A4, 11Jan99 89

Maximum Safety Ratings (according to VDE 0884) see figure 1This device is used for protective separation against electrical shock only within the maximum safety ratings.This must be ensured by using protective circuits in the applications.Input (Emitter)

Parameters Test Conditions Symbol Value UnitForward current Isi 130 mA

Output (Detector)Parameters Test Conditions Symbol Value Unit

Power dissipation Tamb 25C Psi 265 mW

CouplerParameters Test Conditions Symbol Value Unit

Rated impulse voltage VIOTM 6 kVSafety temperature Tsi 150

Insulation Rated Parameters (according to VDE 0884)Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage Routine test

100%, ttest = 1 s Vpd 1.6 kV

Partial discharge test voltage tTr = 60 s, ttest = 10 s, VIOTM 6 kVg gLot test (sample test)

Tr test(see figure 2) Vpd 1.3 kV

Insulation resistance VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100C

RIO 1011

VIO = 500 V, Tamb = 150C (construction test only)

RIO 109

0 25 50 75 1250

50

100

150

200

300

P To

tal P

ower

Diss

ipat

ion

( mW

)

tot

Tsi Safety Temperature ( C )150

94 9182

100

250 PhototransistorPsi ( mW )

IR-DiodeIsi ( mA )

Figure 1. Derating diagram

VIOTM

VPd

VIOWMVIORM

V

t4t3 ttesttstrest2t1

t

0

13930

tTr = 60 s

t1, t2 = 1 to 10 st3, t4 = 1 sttest = 10 ststres = 12 s

Figure 2. Test pulse diagram for sample test according toDIN VDE 0884


Rev. A4, 11Jan9990

Switching Characteristics of 4N25(G)VParameter Test Conditions Symbol Typ. Unit

Delay time VS = 5 V, IC = 5 mA, RL = 100 (see figure 3) td 4.0 sRise time

S C L ( g )tr 7.0 s

Fall time tf 6.7 sStorage time ts 0.3 sTurn-on time ton 11.0 sTurn-off time toff 7.0 sTurn-on time VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4) ton 25.0 sTurn-off time

S F L ( g )toff 42.5 s

Switching Characteristics of 4N35(G)VParameter Test Conditions Symbol Typ. Unit

Delay time VS = 5 V, IC = 2 mA, RL = 100 (see figure 3) td 2.5 sRise time

S C L ( g )tr 3.0 s

Fall time tf 4.2 sStorage time ts 0.3 sTurn-on time ton


Rev. A4, 11Jan99 91

Typical Characteristics (Tamb = 25C, unless otherwise specified)

0

50

100

150

200

250

300

0 40 80 120

P To

tal P

ower

Diss

ipat

ion

( mW

)

Tamb Ambient Temperature (C )

96 11700

tot

Coupled device

Phototransistor

IR-diode

Figure 6. Total Power Dissipation vs. Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0VF Forward Voltage ( V )96 11862

FI

For

war

d Cu

rrent

( mA

)

Figure 7. Forward Current vs. Forward Voltage

0.50.60.70.80.91.01.1

1.2

1.31.4

1.5

30 20 10 0 10 20 30 40 50 60 70 80Tamb Ambient Temperature ( C

)96 11874

CTR

Rel

ativ

e Cu

rrent

Tra

nsf

er R

atio

rel

VCE=10VIF=10mA

Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature

1

10

100

1000

10000

0 10 20 30 40 50 60 70 80 90 100Tamb Ambient Temperature ( C

)96 11875

I

C

olle

ctor

Dar

k Cu

rrent

,CE

O with

ope

n Ba

se ( n

A )

VCE=10VIF=0

Figure 9. Collector Dark Current vs. Ambient Temperature

0.001

0.010

0.100

1.000

1 10 100IF Forward Current ( mA )96 11876

I

Co

llect

or B

ase

Curre

nt ( m

A )

CB

VCB=10V

Figure 10. Collector Base Current vs. Forward Current

0.01

0.10

1.00

10.00

100.00

0.1 1.0 10.0 100.0IF Forward Current ( mA )96 11904

VCE=10V

I

Col

lect

or C

urre

nt ( m

A )

C

Figure 11. Collector Current vs. Forward Current


Rev. A4, 11Jan9992

0.1

1.0

10.0

100.0

0.1 1.0 10.0 100.0VCE Collector Emitter Voltage ( V

)96 11905

I

Col

lect

or C

urre

nt ( m

A )

C

20mA

10mA

5mA

2mA

1mA

IF=50mA

Figure 12. Collector Current vs. Collector Emitter Voltage

1 100

0.2

0.4

0.6

0.8

1.0

V Co

llect

or E

mitt

er S

atur

atio

n Vo

ltage

( V )

CEsa

t

IC Collector Current ( mA )100

95 10972

CTR=50%

20%

10%

Figure 13. Collector Emitter Saturation Voltage vs. Collector Current

0.01 0.1 1 100

200

400

600

800

1000

h

D

C Cu

rrent

Gai

nFE

IC Collector Current ( mA )100

95 10973

VCE=10V

5V

Figure 14. DC Current Gain vs. Collector Current

0.1 1 101

10

100

1000

CTR

Cu

rrent

Tra

nsf

er R

atio

( % )

IF Forward Current ( mA )100

95 10976

VCE=20V

Figure 15. Current Transfer Ratio vs. Forward Current

0 5 10 150

10

20

30

40

50

IF Forward Current ( mA )20

95 10974

t /

t

T

urn

on /

Turn

off

Tim

e (

s )

off

on

Saturated OperationVS=5VRL=1k

toff

ton

Figure 16. Turn on / off Time vs. Forward Current

0 2 4 6IC Collector Current ( mA )

10

95 10975

t /

t

T

urn

on /

Turn

off

Tim

e (

s )

off

on

Non SaturatedOperationVS=10VRL=100

toff

ton

0

5

10

15

20

8

Figure 17. Turn on / off Time vs. Collector Current


Rev. A4, 11Jan99 93

XXXXXX

0884918 A TK 63

15090

Type

DateCode(YM)

CouplingSystem

Indicator

CompanyLogo

ProductionLocation

SafetyLogo

VD E

Figure 18. Marking example

Dimensions of 4N25G/ 4N35G in mm

14771

weight: ca. 0.50 gcreepage distance: 8 mmair path: 8 mm

after mounting on PC board


Rev. A4, 11Jan9994

Dimensions of 4N25/ 4N35 in mm

14770

weight: 0.50 gcreepage distance: 6 mmair path: 6 mm

after mounting on PC board

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Data Sheet