Application of Six Sigma Methodology to Optimize the Performance of the Inter-Metal Dielectric...
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- Slide 1
- Application of Six Sigma Methodology to Optimize the
Performance of the Inter-Metal Dielectric Process Authors: Chao-Ton
Su, Chia-Jen Chou, and Li-Fei Chen Sources: IEEE Transactions on
Semiconductor Manufacturing, Vol. 22, No. 2, pp. 297-304 Date:
12/27/2010
- Slide 2
- Outline Introduction Case study Conclusions
- Slide 3
- Introduction Background (inter-metal dielectric, IMD) (step
coverage) (integrated circuit, IC)
- Slide 4
- Introduction Motivation
- Slide 5
- Introduction IMD 1. (line resistance, R) (parasitic
capacitance, C) R/C 2. (open circuit) 3.
- Slide 6
- Introduction Objective IMD
- Slide 7
- Case study IMD (IMD performance improvement project) IMD
IMD
- Slide 8
- Case study Define Phase (thin film module) (quality assurance)
(product engineering integration engineers) (process owners) IMD
(CTQs)
- Slide 9
- Case study (dies) (defects per unit, DPU) DPU 0.045 (cost of
poor quality, COPQ) DPU 0.03 IMD (gap-fill ability) (VRDB)
(fluorine contained)
- Slide 10
- Case study (A/R) 3:1 5:1 3:1
- Slide 11
- Case study (voltage-ramping stress test, VRDB) VRDB VRDB
- Slide 12
- Case study IMD (Fluorosilicate glass, FSG) FSG (dielectric
constant) 3.9 3.5
- Slide 13
- Case study IMD (silicon rich oxide, SRO liner) (Fluorosilicate
glass, FSG)1 (Fluorosilicate glass, FSG)2 (undoped silicon glass,
USG) CMP CMP 1 2 & (Chemical Mechanical Polishing, CMP) (Global
Planarization)
- Slide 14
- Case study Measure Phase CTQ VRDB
- Slide 15
- Case study Gauge R&R 7.02% 8.54% VRDB Individuals and
Moving Range chart (I-MR) VRDB 8.33 30 (P-Value: 0.895) C pk 0.79
(VRDB) C pk 0.76 C pk 0.86 C pk 0 5 %GRR