Alvise Bagolini a , Maurizio Boscardin a ,

Alvise Bagolinia, Maurizio Boscardin a, Gian-Franco Dalla Bettab, Gabriele Giacominia, Francesca Mattedia, Marco Povolib, Nicola Zorzia

a Fondazione Bruno Kessler (FBK-CMM) Italyb INFN and University of Trento, Italy

Production of 3D silicon pixel sensors at FBK for the ATLAS IBL

3D silicon pixel sensor productionThe layout has been developed in the in the framework of the ATLAS 3D Sensor Collaboration

• FE-I4 (8x)

• FE-I3 (9x)

• CMS (3x)

• test structures

3D_DDTC with passing-through columns technology was used for the first production oriented to the ATLAS insertable B-Layer

dead area of 200 mm

Ohmic Side

Junction side

50 µm

125 µm

FE-I4 sensor 80 x 336 pixels

Layout details of a FE_I4 sensor

• Column depth equal to the wafer thickness, etched from both sides

• Full double side process• Surface isolation with p-spray

on both sides• No support wafer• Columns (~12 µm diam.) are

“empty”, doped by thermal diffusion and passivated by SiO2

• Edge protection in order to improve the mechanical yield

t

p+ col.

n+ col.

p-spray

edge protection

p-sub

3D-DTC with passing through columns

• Optimization of DRIE recipe for holes with higher aspect ratio in order to improve the uniformity of the etch rate throughout the process.

• Optimization of edge protection in order to • increase the mechanical yield after DRIE etching • reduce the wafer bowing and consequently the leakage

current

Main technological aspects

Optimize DRIE recipe for holes with higher aspect ratio

Etch stop for DRIE etching

≈ 12 µm

≈ 10 µm

≈ 234 µm≈ 11 µm

≈ 5 µm

208 µm

Optimize edge protectionMechanical fragility of wafers manly due to a cracks on the wafer edge caused by D-RIE etch step:

Need a special edge protection during DRIE etching (electrostatic clamping) to prevent the creation of cracks that could cause the breakage during the processing.

Need a special care during processing

Mechanical yield with the optimized edge protection:

initial wafers

broken wafers

mechanical yield (%)

3D ATLAS 10 25 5 80%3D ATLAS 11 25 3 88%3D ATLAS 12 23 6 74%3D ATLAS 13 20 8 60%

3D_ATLAS10

Optimize edge protection: wafer bowing

Old edge protection wafers warp up to 120 µmOptimized edge protection wafers warp < 30 µm

Edge protection effects on the wafer bowing.

A high bowing induces High leakage current Misalignment among columns Bonding problem

Wafer bowing: leakage current The wafer bowing strongly influences the leakage current.

With the optimized edge protection it is reduced of one order of magnitude.

Leakage current on planar test diodes (4mm2)

Old edge protection Optimized edge protection

Wafer bowing: Column alignment

old edge protection misalignment of a

several μm

left side center right side

optimized edge protection layer

Misalignment < 5μm

Temporary metal for electrical characterization

• The temporary metal shorts 336 pixels together in a strip • Allows to perform electrical tests on the FE-I4 pixel sensors before

bump-bonding• The IV characteristics of 80 strips form a FE-I4 pixel sensor

336 pixels ( 2 electrodes per pixel)

80 strip

Temporary Metal: IV characteristicsThe IV characteristics of 80

strips of two sensors The IV characteristics of FE-I4 pixel sensor as a sum of 80 IV strips curves

VBD and Ileak of the FE-I4 strips

Good uniformity from batch to batch related to the 80 strips of each detector

Numbers of production4 production batches

Selected wafers at least 3 FE-I4 sensors qualified

Selection criteria before bump-bonding:•Vdepl ≤ 15V and•Vop ≥ Vdepl +10V•I (Vop) < 2mA per tile•Vbd > 25V •[I (Vop) / I(Vop – 5V)] < 2

Batch Tested Wafers

Selected Wafers

Total Sensors

Number of Good Sensors

Yield on Selected Wafers (%)

3D ATLAS 10 20 12 96 58 60%3D ATLAS 11 11 4 32 14 44%3D ATLAS 12 16 13 104 63 61%3D ATLAS 13 11 4 32 15 47%

Litho n+ on junction side

Problem with resist adhesion

Low final yield

Problem Investigation on 3D_Atlas11

ConclusionFBK has developed and optimized the technology used for the production

of Si-3D pixel sensors for the ATLAS IBL with a relatively good yield.

Outlook

Upgrade to 6 inchadvantages• Production capability = double the wafers

area• DRIE upgrade with a thin ceramic edge

protection = increasing of the mechanical yield

disadvantage• We have to learn how to process a thin

wafers