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High Temperature, Silicon Carbide, Power MOSFET. S mall B usiness I nnovation R esearch. Cree Research, Inc. Durham, NC. INNOVATION. A process for producing high performance power metal/oxide semiconductor field-effect transistors (MOSFETs) in Silicon Carbide (SiC). ACCOMPLISHMENTS - PowerPoint PPT Presentation
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ACCOMPLISHMENTS Demonstrated the first vertical power MOSFET in SiC
Fabricated a high-performance MOSFETs in SiC that can operate up to 300°C
Received Patent on this technology
COMMERCIALIZATION
Increased SiC material and device sales by >$3M
Created 12 new jobs and saved existing jobs
Initiated tremendous worldwide interest in the area of SiC power semiconductors, resulting in multi-$M programs in SiC MOSFETs for government and commercial labs
Total market potential for SiC Power MOSFETs would be >$2B
Cree Research, Inc.Durham, NC
SmallBusinessInnovation Research
GOVERNMENT/SCIENCE APPLICATIONS
Will be used in aircraft engines
Applicable for high temperature electronics in space craft and will reduce weight and size of spacecraft
Can be used to replace Silicon power devices in power circuits for electric motors and power control, for electric vehicles, robotics, and power supplies
SiC MOSFETs offer much higher efficiencies than silicon in these applications. Potential power savings of >$1B/yr are possible
Lewis Research CenterInstrumentation and Controls3-021
High Temperature, Silicon Carbide,Power MOSFET
Cross-Section of a SiC Power MOSFET
INNOVATION
1988 Phase II, NAS3-25956 , 9/98NASA Contact - Lawrence MatusCompany Contact - John Palmour
A process for producing high performance power metal/oxide semiconductor field-effect transistors
(MOSFETs) in Silicon Carbide (SiC)
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