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DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners. © 2013 by SYSTEM PLUS CONSULTING, all rights reserved. 1 Electronic Costing & Technology Experts www.systemplus.fr 21 rue la Nouë Bras de Fer 44200 Nantes – France Phone : +33 (0) 240 180 916 email : [email protected] December 2013 Version 1 Written by Sylvain Hallereau

Toshiba first GaN on Silicon LED teardown reverse costing report by Yole Developpement

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Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features. The TL1F1 LED of Toshiba are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding process without gold. Moreover, a significant work has been done to thin epitaxial layer in GaN. The GaN thickness approximates the one on Sapphire LED. A low current density per sq cm is obtained, estimated at 20A/sqcm, lower than sapphire LED. However, the 2nd generation of GaN on Si LED produces 30% more lumen. More information on that report at http://www.i-micronews.com/reports/Toshiba-GaN-Silicon-LED/14/413/

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Page 1: Toshiba first GaN on Silicon LED teardown reverse costing report by Yole Developpement

DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The quoted trademarks are property of their owners.

© 2013 by SYSTEM PLUS CONSULTING, all rights reserved. 1

Electronic Costing & Technology Experts

www.systemplus.fr21 rue la Nouë Bras de Fer44200 Nantes – France Phone : +33 (0) 240 180 916 email : [email protected]

December 2013 – Version 1 – Written by Sylvain Hallereau

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Toshiba TF1L1-LW1 - LED

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© 2013 by SYSTEM PLUS CONSULTING, all rights reserved. 2

Glossary1. Overview / Introduction 4

– Executive Summary

– Reverse Costing Methodology

2. Companies Profile 8– Toshiba Profile

3. TH1L1-LW1 Characteristics 11– TH1L1-LW1 Characteristics

4. Physical Analysis 15– Physical Analysis Methodology

– Package Views & Dimensions

– Package Opening

– Package X-Ray

– Package Cross-Section

– Phosphor

– Protective diode

– LED Views & Dimensions

– Cathode

– Anode

– Epitaxy

– LED Thickness

– LED Characteristics

5. Manufacturing Process Flow 46– Global Overview

– LED Fabrication Unit

– LED Process Flow

– Package Fabrication Unit

– Package Process Flow

6. Cost Analysis 58– Synthesis of the cost analysis

– Main steps of economic analysis

– Yields Hypotheses

– Epitaxy Step

– LED Epitaxy Cost

– LED Front-End Cost

– LED Wafer Cost

– LED Cost per process steps

– LED Equipment Cost per Family

– LED Material Cost per Family

– Back-End : Probe and cleaving Cost

– Packaging Cost

– Packaging Cost

– Final Assembly Cost

– Component Cost

7.Estimation Price 77– Price definitions

– Manufacturers financial ratios

– Binning Impact on Manufacturing Price

– Ideal manufacturer Price

– Manufacturing Price with Binning Yield

Future 86Contact 87

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• Package is analyzed and measured.

• Package is opened in order to identify the elements constituting it.

• Cross-section are realized to get overall package data : dimensions, main characteristics.

• The LED is analyzed and measured.

• SEM photographs to measure the LED dimensions.

• Cross-section are realized to get overall LED data : dimensions, main characteristics.

• An analysis of the technologies and of the materials used is performed.

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Optical views : cross_section

SEM views : top view

•LED dimensions:

- Thickness: xxµm

- Side: xxµm

- Surface: xxs q mmxxmm

xxµm

xxmm

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SEM view : Top of the LED, electrode partially removed during the

analysis

Aluminum layer: xxµm

Gold layer: xxµm

Edge of the die

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• The front-end cost ranges from $xx to $xxaccording to yield variations.

• The high cost of the wafer explain the portionof the manufacturing cost is due to yieldlosses in the cost.

• The new equipment explain the portion ofthe manufacturing cost is due to theequipment at xx%.

• The manufacturing yield is between xx% andxx% in 2013

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Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates completed by industry experts.

Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the manufacturing cost (if all parameters are cumulated)

These results are open for discussion. We can reevaluate this circuit with your information. Please contact us:USA Office

• Michael McLaughlin, Business Development Manager, Phone: (650) 931 2552 - Cell: (408) 839 7178 - Email:

[email protected]

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• For custom research: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.

Phone: (81) 362 693 457 - Cell : (81) 80 3440 6466 - Fax: (81) 362 693 448 - Email: [email protected]

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Email: [email protected]

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• Yole Développement Headquarter, France: David Jourdan, Sales Coordination & Customer Service, Tel: +33 472 83 01

90, Email: [email protected]

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• Hailey Yang, Business Development Manager, Phone : (82) 2 2010 883 - Cell: (82) 10 4097 5810

- Fax: (82) 2 2010 8899 – Email: [email protected]