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Tango Systems, Inc Confidential Tango Systems, Inc Confidential
AXCELA™ 200/300/450
By
Tango Systems “Cost-Effective Metallization Solutions”
Tango Systems, Inc Confidential
Ti Stress Tuning DOE: Power, Pressure, Thickness
Wafer No. Target Size/mm Power/kW Ar/sccm
Process Pressure/
mT Dep Time/
sec
Expected Thickness/
Å Stress/Mpa 1 Ti 300 1 50 5.2 540 1000 -270.8 2 Ti 300 3 50 5.2 180 1000 -276.1 3 Ti 300 6 50 5.2 90 1000 -175 4 Ti 300 3 50 5.2 90 500 -459.7 5 Ti 300 3 50 5.2 540 3000 200.3 6 Ti 300 3 20 2 180 1000 -112.2 7 Ti 300 3 80 7.7 180 1000 -232.5
Tango Systems, Inc Confidential
Stress Data from Ti/Cu
Slot No. Stress/Mpa Material DC Pwr/kW Thickness/A Remarks
1 -270.8 Ti 1 1000 None
2 -113.1 Ti 2 1000 None
3 -276.1 Ti 3 1000 None
4 246 Cu 3 2000 None
5 98.11 Cu 3 3000 None
6 175.5 Cu 3 5000 None
7 103.5 Ti/Cu 3+3 1kA+2kA None
8 182.1 Ti/Cu 3+3 1kA+3kA None
9 216.9 Ti/Cu 3+3 1kA+5kA None
10 186.1 Ti/Cu 1+3 1kA+5kA None
11 225.4 Ti/Cu 2+3 1kA+5kA None
12 196.9 Ti/Cu 3+3 1kA+5kA ICP
13 266.6 Ti/Cu 3+3 1kA+5kA Degas+ICP
14 209.4 Ti/Cu 3+3 1kA+2kA ICP
15 278.5 Ti/Cu 3+3 1kA+2kA Degas+ICP
16 189.9 Ti/Cu 3+3 1kA+3kA ICP
17 171.6 Ti/Cu 3+3 1kA+3kA Degas+ICP
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
Ti Stress: Favored by Higher Power
Ti Stress Vs Power for ~ 1000A Thickness
-300-250-200-150-100-50
01 3 6
DC Power / kW
Str
ess/M
Pa
Tango Systems, Inc Confidential
Ti Stress: Favored by Lower Pressure
Ti Stress Vs Process Pressure for ~ 1000A Thickness
-300
-250-200
-150
-100-50
02 5.2 7.7
Process Pressure / mT
Str
ess/
MP
a
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
Ti Stress: Compressive to Tensile Transition with Thickness
Ti Stress Vs Thickness at 3kW, 5mT
-500-400-300-200-100
0100200300
500 1000 3000
Ti Thickness / A
Str
ess/
MP
a
Compressive
Tensile
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
TiW Stress Tunable from Compressive to Tensile with Process Pressure
3750 A TiW Stress Tuning at 3 kW DC Power
-800
-600
-400
-200
0
200
400
600
800
8 15 20
Process Pressure / mT
Stre
ss /
MPa
Compressive
Tensile
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
TiW Stress Lowered by Low DC Power
TiW Stress vs Power for ~ 6mT, 3250A Thickness
-1600
-1200
-800
-400
0
400
1 3 6
DC Power / kW
Stre
ss/M
Pa
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
TiW Stress Lowered by Higher Process Pressure
TiW Stress vs Process Pressure for ~ 3kW, 3250A Thickness
-1800-1500-1200-900-600-300
0300
2 6 7.7
Process Pressure / mT
Stre
ss/M
Pa
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
Increasing TiW Film Thickness Lowers Stress
TiW Stress vs Thickness at 3kW, 6mT
-1800-1500-1200-900-600-300
0300
500 1000 3250
Ti Thickness / A
Stre
ss/M
Pa
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
TiW+Cu Stack Stress Minimal
Wafer No. Target Power/kW Ar/sccm Process
Pressure/mT Dep Time/
sec Stress/MPa
Expected Thickness
(Å)
1 TiW 3 80 7.6 90 -447 500
2 Cu 3 40 4 120 +212 1500
3 TiW+Cu 3/3 80/40 7.7/4 210 -2 2000
Tango Systems, Inc Confidential Tango Systems, Inc Confidential
Film Stress |x| < 200 MPa & Minimal Warpage
• Orange – only TiW or Cu film shows higher bow height
• Green – TiW and Cu stack shows much lower stress
Wafer Slot RF Etch (300A) TiW (1kA) Cu (2kA) Stress / MPa Radius/m Height/µm
1 Y N Y 246 348 32
2 Y Y N -918 -207 -55 3 Y Y Y -113 -619.07 -18.35
4 Y Y Y -164.5 -409.01 -28
5 N N N 0 -32097 2.8
Tango Systems, Inc Confidential
Thank You for Your Time
“In Step with Technology”
Tango Systems