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Sep @2016
From Technologies to Market
Power GaN 2016: Epitaxy and
Devices, Applications, and
Technology Trends
Report Sample
From Technologies to Market
2
Biographies & contacts
Hong LIN
Dr. Hong Lin has worked at Yole Développement as a technology and market analyst since 2013. She specializes in compound semiconductors and provides technical and economic analysis. Before joining Yole Développement, she worked as an R&D engineer at Newstep Technologies. She was in charge of the development of cold cathodes made by PECVD for visible and UV lamp applications based on nanotechnology. She holds a Ph.D in physics and chemistry of materials
Zhen Zong
Zhen Zong works at Yole Développement as an Analyst for Power Electronics and Compound Semiconductors. He graduated from INSA Lyon with an Engineering degree in Material Sciences, specializing in semiconductor devices and micro/nanotechnologies.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
3
COMPANIES CITED IN THE REPORT
AT&S, Dialog Smeiconductors, Efficient Power Conversion, Episil, Exagan, Fairchild, Ford, Fraunhofer IISB, Fuji Electric, GaNSystems, Infineon, Micro GaN, Navitas Semiconductors, NXP, On Semiconductors, Panasonic, Philips, Powerex, Power Integration,
STMicroelectronics, Sumitomo SEI, Toshiba, Toyota, Texas Instruments, TSMC, Transphorm, VisIC Technologies, Xfab, Yaskawa
and more
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
4
POWER DENSITY ENHANCEMENT
Added value enabled by GaN
GaNtransistors was used by the final user of the little box challenge organized by Google.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
NowWhich can be realized
by 2016 :143 W/in3
In July 2014, Google and the IEEE launched the $1 Million Little
Box Challenge, an open competition to design and build a small
kW-scale inverter with a power density greater than 50 Watts
per cubic inch while meeting a number of other specifications
related to efficiency, electrical noise and thermal performance.
GaN
5
EXISITING GAN POWER DEVICES
While most players are working on 600V, 650V range, EPC is highly focus on low voltage GaNdevices.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Base on product datasheet
Under development/
demonstrated/
sampling
Commercially availableAs of August 2016 @ YOLE
6
BUSINESS MODELS IN GAN POWER
So far, epi process are mainly integrated.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Si Substrate Device Design GaN Epi Device processing
And more…
Power GaN
model 1
Power GaN
model 2
Power GaN
model 3
And more…
And more…
Power GaN
model 4
And more…
+
7
POWER SUPPLY: TREND IN THE INDUSTRY
The need are increased efficiency, higher power density and cost reduction.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Pow
er
Densi
ty
W/in3
20
10
30
40
2000 2005 2010 2015
Desktop PS
(multiple output)
Notebook adapters
Server
Power density evolution in the power supply
8
WIRELESS POWER IN MOBILE PHONES
More and more cellphone OEMs are integrating a wireless charging unit in the design.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
?
LG Electronics
9
LIDAR MARKET SIZE EVOLUTION FORECAST
The lidarmarket is expect to grow.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Yole Développement © March 2016, Report
Sensors for drones and robots: market
opportunities and technology revolution
* This figure does not content tradition automotive
10
GAN DISCRETE PACKAGING
Device parasitics
The higher the device frequency, the more important
the consequence
of device parasitics.
SiC MOSFETs
GaN HEMTs
Power
Electronics
RF
RF GaN
Frequency
Voltag
e
Low
High
LGA
Embedded die
TO
PQFN
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Packaging is becoming a particular
bottleneck for GaN. Different packages
have been used for GaN HEMT: traditional
TO packages, embedded die, LGA
package…
11
PROJECTION OF GAN POWER DEVICE MARKET
Split by application
The total GaN-based
power device market is
expected to grow to
$280M in 2021.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
12
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