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3550 NW 115th Ave. Miami, Florida 33178 USA
305-594-0722 [email protected]
www.AmePower.comSolutions in Power Electronics
DevelopmentR&D Mass ProductionDevelopmentR&D
Product & Technology Road Map
Line Up by Device Version
1700V
2500V
3300V
4500V
6500V
500A
1000A
1500A
2000A
2500A
3500ACollector
Current
Collector
Emitter Voltage
D ver. 600A-2400A
E ver. 800A-2400A
Fver. () 600A-3600A
E ver. 400A-1200A
D ver. 400A-1200A
600A-1200AE ver.
E2/E3 ver. 250A-1500A
F ver.() 1200A-1800A
D ver. 600A-900A
E2(-H) ver. 200A-1200A
E2 ver. 250A-750A
F ver.() 1000A-1500A
F ver.() 650A-1000A
Hitachi High Power Module
2017 2018
Fine Cell HiGT
Calender Year
Version Technology 2012 2013 2014
4.5kV/-1500A
6.5kV/-1000A
2015 2016
E22.5kV
- 6.5kV
All SiC
New wire material R&D
R&D
G
Super Fine Easy
Drive Trench IGBT1.7kV
3.3kV
WBG
nHPD2
New
Package
1.7kV/-3600A, 3.3kV/-1800AAdvanced Trench HiGT
Increased Current Density
Li Diode
F
next High Power DensityDual
Low inductance
SiC Diode R&D 3.3kV SiC+Si Hybrid
SiC MOSFET R&D
nHPD2-2
Hitachi Power Semiconductor Device, Ltd. © Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.
() Under Planning and Developing
Line Up by Module Type / Package Type
1700V 2500V 3300V 4500V 6500V
Hitachi High Power Module
200A
250A
400A
500A
600A
750A
800A
900A
1000A
1200A
1500A
1600A
1800A
2400A
3600A
Single (1 in 1) Dual (2 in 1) Chopper Dual diode
Standard isolation
(Package Height : 38mm)
High isolation
(Package Height : 48mm)
73 x 140 x 48
mm
Viso ～10.2kV
130 x 140 x 38
mm
Viso ~6kV
130 x 140 x 48
mm
Viso ~10.2kV
190 x 140 x 38
mm
Viso ~6kV
190 x 140 x 48
mm
Viso ~10.2kV
100 x 140 x 38
mm
Viso ~6kV
100 x 140 x 48
mm
Viso ~10.2kV
Hitachi Power Semiconductor Device, Ltd.© Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.
3550 NW 115th Ave. Miami, Florida 33178 USA
305-594-0722 [email protected]
www.AmePower.comSolutions in Power Electronics
