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4500V HV‐IGBT versions and features
4500V HV‐IGBT
E2 ver.800A-1200A
E2-H ver.800A-1200A
F ver.1000A-1500A
Standard type up to 1200ALow conduction loss
for Traction, HVDC, Industrial drives
High Speed type up to 1200ALow switching lossfor Traction, Industrial drives, Wind turbine
Standard type up to 1500ALow conduction and switching loss, Tvj,op =150C
for Traction, Wind turbine, Industrial drives, HVDC
Hitachi Power Semiconductor Device, Ltd.© Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.
Current Type Package
200A Dual IGBT 73 x 140 x 48 (mm)
400A Dual Diode 130 x 140 x 48 (mm)
800A Single IGBT 130 x 140 x 48 (mm)
1200A Single IGBT 190 x 140 x 48 (mm)
1200A Dual diode 130 x 140 x 48 (mm)
3550 NW 115th Ave. Miami, Florida 33178 USA
305-594-0722 [email protected]
www.AmePower.comSolutions in Power Electronics
“E2” / ”E2‐H” Version 4500V HV‐IGBT
Fine Planar Gate
Low/High FrequencyOperation
Higher current
up to 1200A
High Isolation
Fine planar HiGT (High conductivity IGBT)
Soft LiPT (Low injection Punch Through)
· Two series line upE2 version : Low conduction loss type
E2-H version : Low switching loss (High speed) type
· Higher current rating
“F” Version 4500V HV‐IGBT
Advanced Trench HiGT
Higher Current up to 1500A
Low conduction/switching loss
RoHS compliance
Advanced Trench High Conductivity IGBT (Trench HiGT)
Rated current increased by 25%・Vce(sat)-Eoff trade off improvement by 33% *
・VF-Err trade off improvement by 17% *･ Tvj,op(max)=150oC
· Increasing of current rating by 20% *
· Reduction of Rth(j-c,diode) by 20% *
· Reduction of Ls by 25% *
· High thermal cycle durability with metal bonding
*Compared with E2 version
4500V HV‐IGBT
Hitachi Power Semiconductor Device, Ltd.© Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.
Current Type Package Type name
1000A Single IGBT 130 x 140 x 48 (mm)MBN1000FH45F
1500A Single IGBT 190 x 140 x 48 (mm)MBN1500FH45F
3550 NW 115th Ave. Miami, Florida 33178 USA
305-594-0722 [email protected]
www.AmePower.comSolutions in Power Electronics
