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4500V HV‐IGBT versions and features 4500V HV‐IGBT E2 ver. 800A-1200A E2-H ver. 800A-1200A F ver. 1000A-1500A Standard type up to 1200A Low conduction loss for Traction, HVDC, Industrial drives High Speed type up to 1200A Low switching loss for Traction, Industrial drives, Wind turbine Standard type up to 1500A Low conduction and switching loss, Tvj,op =150C for Traction, Wind turbine, Industrial drives, HVDC Hitachi Power Semiconductor Device, Ltd. © Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved. Current Type Package 200A Dual IGBT 73 x 140 x 48 (mm) 400A Dual Diode 130 x 140 x 48 (mm) 800A Single IGBT 130 x 140 x 48 (mm) 1200A Single IGBT 190 x 140 x 48 (mm) 1200A Dual diode 130 x 140 x 48 (mm) 3550 NW 115 th Ave. Miami, Florida 33178 USA 305-594-0722 [email protected] www.AmePower.com Solutions in Power Electronics “E2” / ”E2‐H” Version 4500V HV‐IGBT Fine Planar Gate Low/High Frequency Operation Higher current up to 1200A High Isolation Fine planar HiGT (Hig h conductivity IGBT) Soft LiPT (Lo w injection Pu nch Th rough) · Two series line up E2 version : Low conduction loss type E2-H version : Low switching loss (High speed) type · Higher current rating

New Hitachi 4500v HV‐IGBT Versions, Packages and Features

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Page 1: New Hitachi 4500v HV‐IGBT Versions, Packages and Features

4500V HV‐IGBT versions and features

4500V HV‐IGBT

E2 ver.800A-1200A

E2-H ver.800A-1200A

F ver.1000A-1500A

Standard type up to 1200ALow conduction loss

for Traction, HVDC, Industrial drives

High Speed type up to 1200ALow switching lossfor Traction, Industrial drives, Wind turbine

Standard type up to 1500ALow conduction and switching loss, Tvj,op =150C

for Traction, Wind turbine, Industrial drives, HVDC

Hitachi Power Semiconductor Device, Ltd.© Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.

Current Type Package

200A Dual IGBT 73 x 140 x 48 (mm)

400A Dual Diode 130 x 140 x 48 (mm)

800A Single IGBT 130 x 140 x 48 (mm)

1200A Single IGBT 190 x 140 x 48 (mm)

1200A Dual diode 130 x 140 x 48 (mm)

3550 NW 115th Ave. Miami, Florida 33178 USA

305-594-0722 [email protected]

www.AmePower.comSolutions in Power Electronics

“E2” / ”E2‐H” Version 4500V HV‐IGBT

Fine Planar Gate

Low/High FrequencyOperation

Higher current

up to 1200A

High Isolation

Fine planar HiGT (High conductivity IGBT)

Soft LiPT (Low injection Punch Through)

· Two series line upE2 version : Low conduction loss type

E2-H version : Low switching loss (High speed) type

· Higher current rating

Page 2: New Hitachi 4500v HV‐IGBT Versions, Packages and Features

“F” Version 4500V HV‐IGBT

Advanced Trench HiGT

Higher Current up to 1500A

Low conduction/switching loss

RoHS compliance

Advanced Trench High Conductivity IGBT (Trench HiGT)

Rated current increased by 25%・Vce(sat)-Eoff trade off improvement by 33% *

・VF-Err trade off improvement by 17% *・ Tvj,op(max)=150oC

· Increasing of current rating by 20% *

· Reduction of Rth(j-c,diode) by 20% *

· Reduction of Ls by 25% *

· High thermal cycle durability with metal bonding

*Compared with E2 version

4500V HV‐IGBT

Hitachi Power Semiconductor Device, Ltd.© Hitachi Power Semiconductor Device Ltd. 2016. All rights reserved.

Current Type Package Type name

1000A Single IGBT 130 x 140 x 48 (mm)MBN1000FH45F

1500A Single IGBT 190 x 140 x 48 (mm)MBN1500FH45F

3550 NW 115th Ave. Miami, Florida 33178 USA

305-594-0722 [email protected]

www.AmePower.comSolutions in Power Electronics