SHINDENGEN

2SJ374

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

( F20F6P )

-60V -20A

OUTLINE DIMENSIONS

(Unit : mm)

RATINGS

60V Series Power MOSFET P-Channel Enhancement type

Case : FTO-220

DC/DC converters Non-Isolated DC-DC Converter Power management Motor & Solenoid Drive of Office Equipment Mobile Gear

APPLICATION

VGS= 4V drive Built-in ZD for Gate Protection Avalanche resistance guaranteed

FEATURES

Absolute Maximum Ratings （Tc = 25）Item Symbol Conditions Ratings Unit

Storage Temperature Tstg -55～150 Channel Temperature Tch 150Drain-Source Voltage VDSS -60 VGate-Source Voltage VGSS ±20Continuous Drain Current（DC） ID -20Continuous Drain Current（Peak) IDP Pulse width≦10μs, Duty cycle≦1/100 -80 AContinuous Source Current（DC） IS -20Total Power Dissipation PT 50 WSingle Avalanche Current IAS Tch = 25 -20 ADielectric Strength Vdis Terminals to case,　AC 1 minute 2 kVMounting Torque TOR （ Recommended torque ：0.3 N･m ） 0.5 N･m

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SJ374 ( F20F6P )60V Series Power MOSFET

Electrical Characteristics Tc = 25

Item Symbol Conditions Min. Typ. Max. Unit

Drain-Source Breakdown Voltage V(BR)DSS ID = -1mA, VGS = 0V -60 VZero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -100 μAGate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±10Forward Tranｓconductance gfs ID = -10A, VDS = -10V 10 14 SStatic Drain-Source On-ｓtate Resistance RDS(ON) ID = -10A, VGS = -10V 0.05 0.07 ΩGate Threshold Voltage VTH ID = -1mA, VDS = -10V -1.0 -1.5 -2.0 VSource-Drain Diode Forward Voltage VSD IS = -10A, VGS = 0V -1.5Thermal Resistance θjc junction to case 2.50 /ＷTotal Gate Charge Qg VDD = -48V, VGS = -10V, ID = -20A -87 nCInput Capacitance Ciss 2050Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0V, f = 1MHZ 520 pFOutput Capacitance Coss 1050Turn-On Time ton ID = -10A, RL = 3Ω, VGS = -10V 160 320 nsTurn-Off Time toff 700 1400

-40

-35

-30

-25

-20

-15

-10

-5

0-10-8-6-4-20

2SJ374 Transfer Characteristics

VDS = −5Vpulse testTYP

Tc = −55°C

25°C

100°C

150°C

Gate-Source Voltage VGS [V]

Dra

in C

urr

ent

ID

[A]

Static Drain-Source On-state Resistance

10

100

1000

-50 0 50 100 150

2SJ374

VGS = −10Vpulse testTYP

ID = −10A

Case Temperature Tc [°C]

Sta

tic D

rain

-Sou

rce

On-

stat

e R

esis

tanc

e R

DS

(ON

) [m

Ω]

Gate Threshold Voltage

-2.5

-2

-1.5

-1

-0.5

0-50 0 50 100 150

2SJ374

VDS = −10VID = −1mATYP

Case Temperature Tc [°C]

Gat

e T

hres

hold

Vol

tage

V

TH [

V]

Safe Operating Area

-0.1

-1

-10

-100

-1 -10 -100

2SJ374

100µs

Tc = 25°CSingle Pulse

200µs

1ms

10ms

DC

10µs

Drain-Source Voltage VDS [V]

Dra

in C

urre

nt

I D [

A]

RDS(ON)limit

0.0

1

0.11

10

10

0

2S

J374

10-

51

0-4

10-

31

0-2

10-

11

001

011

02

Tra

nsi

ent

Therm

al

Impedance

Tim

e

t [

s]

Transient Thermal Impedance θjc(t) [°C/W]

Capacitance

10

100

1000

10000

-50-40-30-20-100

2SJ374

0.005

Tc=25°CTYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

Cap

acita

nce

Cis

s C

oss

Crs

s [

pF]

0

20

40

60

80

100

0 50 100 150

2SJ374 Power Derating

Pow

er

Dera

ting

[%]

Case Temperature Tc [°C]

-50

-40

-30

-20

-10

0-140-120-100-80-60-40-200

2SJ374

-20

-15

-10

-5

0

−24V

Gate Charge Characteristics

ID = −20A

−12V

VDD = −48V

VGS

VDS

Gate Charge Qg [nC]

Dra

in-S

ourc

e V

olta

ge

VD

S [

V]

Gate

-Sourc

e V

olta

ge

VG

S

[V]