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Allow Me to Introduce Myself… 1 I’M RON AND I’MA CMOS-AHOLIC

Commercializing RF SOI

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Allow Me to Introduce Myself…

1

I’M RON AND I’M A CMOS-AHOLIC

What I believe…

2

Seeking RF CMOS Integration Since 1988

3

Peregrine: Solving the World’s Toughest RF Challenges

Peregrine Semiconductor Proprietary 4

Fabless semiconductor company

• Pioneered use of CMOS SOI for RF

• Performance on par with GaAs, with all the

benefits of CMOS

• Perfected technology over 25 years

Serving multiple end-markets

• Leading innovator in the mobile handset space

• Bringing RF innovation to aerospace,

automotive test & measurement and other

industrial markets

• Initial Public Offering August 2012

• Headquarters in San Diego, CA

• 300+ employees

SAPPHIRE

Proven SOI Technology

Outstanding RF/Microwave

Properties

Mature Supply Chain

Most Widely Used

Semiconductor Technology

CMOS

Scalable

Lowest Power and Cost

Fabless Model

Industry-Leading RF Semiconductor Technology

Near-Perfect

Insulating Substrate+

UltraCMOS® Silicon-on-Sapphire

Combining the Best of the Best

Unique Position in Industry

Better Performance

Enables Integration RF Smaller Analog Smarter Digital

A Unique form of Silicon-on-Insulator (SOI) Technology

Bulk CMOS Process UltraCMOS 1-9 Process

oxide gate gatecontactcontact

silicon layercontact

insulating sapphire substrate

p-channel FET n-channel FET

UltraCMOS 10 Process

p+ base

semi-insulating GaAs substrate

n+ GaAs subcollector

n- GaAs collector

AlGaAsemitter

collectorcontact

basecontact

emittercontact

basecontact

GaAs HBT Process

isolationimplant

npn-bipolar HBT

contact gate isolation

n+ n+ n+p+ p+ p+

p+substrate

p-epitaxial layer

n-well

oxidegate contactcontact

bodytie

n-channel FETp-channel FET

p-well

contact gate isolation

n+ n+p+ p+

High resistivity Si substrate

gate contactcontact

n-channel FETp-channel FET

Buried oxide layer

UltraCMOS® Technology vs. Competing RF Processes

RFFE Technology Comparison

Digital

Logic

Analog &

Mixed

Signal

Circuits

Low-

Noise

Amplifiers

High-Quality

Passives

and Filters

Complex

RF

Switches

Handles high

RF voltages

Power

Amplifiers

Monolithic

RF SOCCost

SOS

CMOS BEST BEST BEST BEST

Bulk

CMOSBEST BEST

Si

Bipolar BEST

SOI

CMOS

Si

BiCMOS BEST

SiGe

BiCMOS

III-V

MESFET BEST

III-V

Bipolar BEST

RF SoC integration requires or better. Х means the technology cannot integrate the function

UltraCMOS® Switches Launched the RFCMOS Revolution

• Reduced FEM footprint by nearly half

• Reduced assembly costs

• Improved quality & reliability

• Set linearity levels over GaAs

3.0

mm

3.8 mm

GaAs ASMThree IC technologies needed

CMOS

Decode/Bias

GaAs

SP9T

LPF

IPD UltraCMOS™

SP9T

Solution

2.5

mm

2.5 mm

UltraCMOS ASMTX LPFs integrated into substrate

>45% reduction in area

All devices are SMD

Simplified supply & manufacturing

Peregrine Semiconductor Proprietary 8

Switches Were the First Example of “Intelligent Integration”

• UltraCMOS technology supports multiple capabilities simultaneously

• Enables integration of many additional “ancillary” functions

9

ES

DC

HA

RG

E

PU

MP

S

SP

IV

OLTA

GE

RE

GU

LA

TO

RS

NO COMPROMISE IN RF PERFORMANCE

CORE

CAPABILITY

MIC

RO

WA

VE

AN

AL

OG

DIG

ITA

L

RF

UltraCMOS® Technology - Enabling μWave Integration

Peregrine Semiconductor Proprietary 10

fSerial

Bus

Control

TX_IN

RX_OUT

CLK

DATA

EN

VDD

VSS

RX_AMP

TX_AMP

MICROWAVE

PERFORMANCE

MMIC DESIGN

TECHNIQUES

MULTI BAND

TUNING

CONTROL LOGIC &

CALIBRATION

MMIC, DIGITAL &

ANALOG INTEGRATION

Developing Universal Flexible Products

11

IndustrialAerospace &

Defense

Test &

Measurement

Wired

Broadband

Wireless

Infrastructure

AGGREGATION OF REQUIREMENTS

WI PRODUCTWIRED

PRODUCT

T&M

PRODUCT

AEROSPACE

PRODUCT

INDUSTRIAL

PRODUCT

UNIVERSAL

FLEXIBLE

PRODUCT

• Increased Volume

• Reduction in Product SKU’s

• Cost Effective

UltraCMOS Global 1 Integrated System

No compromise in RF with the Integration benefits of CMOS

12

What is included in Global 1

• 3-path MMMB PA, Post PA switching, Antenna switch & Antenna tuner

• Support for envelope tracking

• Common RFFE MIPI interface

MMMB PA

Post-PA Switch Antenna Switch Tuner

Integration Drives Improved RF Performance

13

Low Band PA

690-915MHz

Mid Band PA

1710-2100MHz

High Band PA

2300-2700MHz

5 Unique

Low Band Outputs

RFFE MiPi

Control Interface

Common Bias

Generation

Tunable input, inter-stage and output matching

5 Unique

Mid Band Outputs

4 Unique

High Band

Outputs

Benefits of Intelligent Integration

Configurability

Flexibility

Reliability

Repeatability

Ease of Use

Smaller Form Factor

Performance

14

Intelligent Integration enables our end customers to deliver improved

system performance and quality products with streamlined

manufacturing and supply chain

Thank You