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Hello instructor and peers, my name is Loren Karl Schwappach. I am a working towards my BSEE and BSCE at CTU. Today I am going to speak to you about Transistor Transistor Logic NAND gates. To get the most from this briefing you will need to have an understanding of BJTs and basic electronics. 1

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Page 1: 2a ee600 device_ttl_schwappach

Hello instructor and peers, my name is Loren Karl

Schwappach. I am a working towards my BSEE and BSCE at CTU.

Today I am going to speak to you about Transistor Transistor Logic NAND

gates. To get the most from this briefing you will need to have an

understanding of BJTs and basic electronics.

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Page 2: 2a ee600 device_ttl_schwappach

Today I am going to cover the following topics:

Transistor Transistor Logic (TTL)

Basic TTL NAND Circuit & Symbol

PSpice Results for High Inputs

PSpice Results for Low Inputs

Simulation Results

If time permits I will also talk to you about:

Totem Pole Output Stage & Fanout

TTL Families

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This diagram uses two 2N3904 NPN transistors to emulate

the dual-emitter NPN transistor commonly used in TTL NAND gates. I

had to tie transistors Q1a’s and Q1b’s collectors and bases together to

simulate the two-emitter transistor commonly used in TTL gates. Resistor

RB is called a pull resistor and is used to increase transistor Q3’s

switching speed. The symbols for representing NAND gates are

illustrated.

Some of the advantages and disadvantages of TTL (Davis,

2011) include: CMOS is generally smaller and typically requires less

voltage and uses less power than TTL. TTL typically benefits from faster

switching speeds than CMOS. TTL uses bipolar transistors where CMOS

uses MOSFET (metal oxide semiconductor field effect transistor). CMOS

is more sensitive to ESD than TTL.

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Page 4: 2a ee600 device_ttl_schwappach

I had to modify my original TTL circuit inputs into VDC

sources in order to correctly simulate the currents and voltages with both

inputs high. After running a PSpice simulation on the circuit I observed

the following results. First, the two logic highs (5VDC) resulted in a logic

low output (30.55mV) as should a NAND gate. Second, current flowed

from R1 to the base and collector of Q1a and Q1b (working in reverse

active state), the current then proceeded through the base of Q2 and Q3,

saturating both and sending the current to ground and resulting in a low

output.

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Page 5: 2a ee600 device_ttl_schwappach

After modifying both of the inputs to provide 0VDC (logic low)

I observed the following results. First, the two logic lows resulted in a

logic high (5VDC) output. The easiest path to ground was from VCC

through resister R1, through the base of transistors Q1a and Q1b and then

to the inputs. Little current flowed to the base of transistors Q2 and Q3 as

a result, leaving both in cutoff mode and driving an output of 5VDC as a

NAND gate should.

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Page 6: 2a ee600 device_ttl_schwappach

I next used the original TTL circuit with VPulse input sources

with Input A’s frequency at 1kHz (period = 1ms) and Input B’s frequency

at 500Hz (period = 2ms). The results were pleasing and confirmed my TTL

NAND gate circuit was correctly producing the results of a two input

NAND gate.

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I next checked the propagation delay and rise/fall times of the

circuit. The results were much better than I expected and showed

approximately: a fall time of 4ns, a high to low propagation delay of 2ns, a

rise time between 50-100ns, and a low to high propagation delay of around

25-50ns. These were in close agreement with TI’s (used to be National

Semiconductor) DM7400 quad two input NAND gate.

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Page 8: 2a ee600 device_ttl_schwappach

Today I talked to you about transistor transistor logic. I

showed the most common TTL NAND gate, I tested a self engineered TTL

NAND circuit in PSpice against all possible inputs and confirmed the use

of TTL for gate creation. If I had additional time I would also introduced

the Totem Pole Output Stage, Fanout, and some popular TTL families.

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Does anyone have any questions?

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References:

Davis, L. (2011). Logic Threshold Voltage Levels. Retrieved August 16,

2011, from: http://www.interfacebus.com/voltage_threshold.html

DM7400 Specifications. (1989). National Semiconductor. Retrieved August

16, 2011, from:

http://www.datasheetcatalog.org/datasheet/nationalsemiconductor/DS0066

13.PDF

Falstad, P. (2010). TTL NAND Gate Java Demonstration. Retrieved

August 16, 2011, from: http://falstad.com/circuit/e-ttlnand.html

Neamen, D. (2007). Microelectronics: Circuit Analysis and Design (3rd ed.).

New York, NY: McGraw-Hill.

Tokheim, R. (1988). Schaum’s Outline Series: Digital Principles (2nd ed.).

New York, NY: McGraw-Hill.

[Untitled SN7400]. (n.d.). Retrieved August 16, 2011, from:

http://focus.ti.com/graphics/folders/partimages/SN7400.jpg

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References Continued:

[Untitled NAND]. (n.d.). Retrieved August 16, 2011, from:

http://www.kpsec.freeuk.com/symbols/nand.gif

[Untitled IEEE NAND]. (n.d.). Retrieved August 16, 2011, from:

http://wiki-images.enotes.com/thumb/d/d8/NAND_IEC.svg/100px-

NAND_IEC.svg.png

[Untitled Question Mark]. (n.d.). Retrieved August 16, 2011, from:

http://healmyptsd.com/wp-content/uploads/2009/09/question-mark3-

misallphoto.jpg

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Page 12: 2a ee600 device_ttl_schwappach

I had to modify my original TTL circuit inputs into VDC

sources in order to correctly simulate the currents and voltages with both

inputs high. After running a PSpice simulation on the circuit I observed

the following results. First, the two logic highs (5VDC) resulted in a logic

low output (30.55mV) as should a NAND gate. Second, current flowed

from R1 to the base and collector of Q1a and Q1b (working in reverse

active state), the current then proceeded through the base of Q2 and Q3,

saturating both and sending the current to ground and resulting in a low

output.

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Page 13: 2a ee600 device_ttl_schwappach

After modifying both of the inputs to provide 0VDC (logic low)

I observed the following results. First, the two logic lows resulted in a

logic high (5VDC) output. The easiest path to ground was from VCC

through resister R1, through the base of transistors Q1a and Q1b and then

to the inputs. Little current flowed to the base of transistors Q2 and Q3 as

a result, leaving both in cutoff mode and driving an output of 5VDC as a

NAND gate should.

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If additional time permits:

You can add another stage to the simple TTL model called a

Totem Pole Output Stage by adding another transistor and diode below

resister RC and above transistor Q3. This is used in most TTL circuits to

improve propagation delay times (Neamen, 2007, p. 1278).

Fanout is another important TTL circuit consideration. The

Fanout number quantifies the maximum amount of similar logic circuits

that can be connected to the output (Neamen, 2007, p. 1279).

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TTL logic gates are in the 7400 and 5400 series. The 5400

series is typically used for military technologies due to the temperature

hardiness. TTL families include standard, Low Power, Low Power

Schottky, Schottky, Advanced low-power Schottky, and Advanced

Schottky. The Low Power Schottky is the most commonly used TTL and

the Advanced Schottky has the fastest switching speed and works in the

GHz range (Tokheim, 1988).

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