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The top documents tagged [short channel devices]
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Current Mirror Ref
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lec14 DTMOS
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Engineering
Design and analysis of a two stage miller compensated
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Education
Short Channel Effect In MOSFET
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SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick
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1 CHAPTER 8 MOBILITY. 2 8.1 INTRODUCTION 3 High mobility material has higher frequency response and higher current. Electron-electron or hole-hole scattering
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Strained Silicon MOSFET R91943037 Jie-Ying Wei Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University,
221 views
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Analytical Modeling of RF Noise in MOSFETs – A Review S. Asgaran and M. Jamal Deen Electrical and Computer Engineering, CRL 226 McMaster University, Hamilton,
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279-E317.pdf
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