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The top documents tagged [insulating sio2 layer]
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IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot
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Snowmass, August, 2005P. Colas - InGrid1 M. Chefdeville a, P. Colas b, Y. Giomataris b, H. van der Graaf a, E.H.M.Heijne c, S.van der Putten a, C. Salm
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Issai Shlimak
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