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Electron. Mater. Lett., Vol. 11, No. 2 (2015), pp. 315-321
Electrical Conductivity of Porous Silver Made from Sintered Nanoparticles
Abu Samah Zuruzi1,* and Kim S Siow
2
1Engineering Product Development Pillar, Singapore University of Technology and Design, 20 Dover Drive,
S(138682), Singapore2Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi,
Selangor D.E., Malaysia
(received date: 21 October 2014 / accepted date: 23 November 2014 / published date: 10 March 2015)
1. INTRODUCTION
Silver (Ag) has been used as filler in electrically conductive
adhesives because of its high electrical conductivity,
resistance to oxidation and high melting temperature.[1] Such
adhesives are used to join silicon dies to a substrate or lead
frame to facilitate heat dissipation. Silver paste (without the
adhesive component) has been used to bond dies directly to
copper for higher power application such as in power
modules.[2] The microelectronic packaging industry sees
low-temperature sintered Ag pastes as a potential replacement
for PbSn solders used for die attach.[3-5] Similarly, the printed
electronics industry is developing low sintering temperature
Ag ink as electrical conductors compatible with low cost
plastic or paper substrates for flexible circuits.[6-8]
Silver pastes or inks with low-temperature sintering
capability utilize Ag in the form of nanorods,[9] nanowires,[10,11]
nanoparticles.[8,7,12] Sintering temperatures of these materials
are between 100 to 200°C; much lower than melting
temperature of bulk Ag, 961.8°C.[13] Prior studies suggest
that at these temperatures, surface diffusion and/or surface
melting occur on nanoscale Ag leading to metallurgical
bonding and, consequently, electrical conduction.[14,15] Ag
pastes and inks sintered at 150°C for up to about 30 minutes
are often porous. As sintering proceeds at a constant
temperature, pores in Ag pastes and inks shrink. Porosity in
metals suppresses electrical and thermal conductivities;
properties which are of paramount importance in electronic
applications.[16] In a recent study, degradation in the
performance of an optical device has been attributed to pores
in its sintered Ag die attach.[17] Pores act as hotspots and
degrade thermal dissipation resulting in a temperature
increase and, subsequently, an undesired wavelength drift.
Here we study the relationship between electrical con-
ductivity and porosity when Ag nanoparticles are sintered at
150°C up to 5 mins. We propose a model that relates
electrical conductivity to morphology. Although there are
existing physical models,[18-20] our model captures salient
features not considered in prior models; such as material
accumulation at vertices during sintering, due to amplified
surface tension effects at the nanoscale, and shape of
ligaments. There is close agreement between electrical
conductivity predicted by our model, which does not contain
any fitting parameter, and that determined experimentally.
Electrical conductivity of open cell porous silver (Ag) with sub-micrometer featureswas studied. Porous Ag was formed from annealing Ag nanoparticles at 150°C up to5 minutes. Porous Ag is a network of cylindrical ligaments joined at their ends tospherical vertices. Electrical conductivity of porous Ag was ~20% of bulk value after5 mins annealing. Kelvin cells (truncated octahedrons) with cylindrical ligaments andspherical vertices (CLSV) were used to compute electrical conductivity which is inagreement with experimental data, without any fitting parameter. Results of theCLSV model are also in agreement with the well-established Koh-Fortini empiricalrelation.
Keywords: porous silver, electrical conductivity, silver nanoparticle, sintering,interconnects
DOI: 10.1007/s13391-014-4357-2
*Corresponding author: [email protected]©KIM and Springer
316 A. S. Zuruzi et al.
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
2. MATERIALS AND METHODS
2.1 Materials and methods
Silver (Ag) paste was printed on electrically insulating
plastic support sheet. Ag paste contains Ag nanoparticles
(average radius 25 nm) suspended in viscous organic phase.
Initial thickness of the Ag paste layer is 450 μm. The Ag
paste layer/plastic sheet was then cut to obtain 1.5 cm square
samples. Mass of Ag paste layer/plastic sheet samples was
determined using a high resolution analytical mass balance
with repeatability down to 0.01 mg (Mettler Toledo). Mass
of a 1.5 cm plastic support sheet was determined in the same
way. Mass of the Ag paste layer in each sample was
determined after off-setting the mass of the 1.5 cm plastic
support sheet. All samples were annealed at 150°C in air
with no applied load. After annealing for the required time,
their mass measured again. Hence, mass change of samples
after annealing was determined. Thickness of Ag paste layer,
τ, after annealing was determined, at a step made at an edge,
using a contact profilometer. Surface roughness of Ag paste
layer is less than 1% of its thickness and does not contribute
significantly to error in volume computation.
2.2 Characterization
Morphology of porous Ag layer formed was studied using
a scanning electron microscope (SEM) equipped with a field
emission gun (JEOL). Dimensions of microstructural features
were measured in-situ in the SEM chamber. Electrical
conductivity was computed from current-voltage measurements
collected at room temperature using a four point probe
system comprising of a Keithley source meter coupled to a
Keithlink prober. The probe head has Cu-Be alloy pins
positioned collinearly at 1.25 mm spacing. Voltage was
measured as current was sourced from 0 to 100 mA at
10 mA increments.
3. EXPERIMENTAL RESULTS
Scanning electron microscopy (SEM) shows porous
structure in annealed Ag paste layer, Fig. 1(a) to (d).
Nanoparticles in pristine Ag paste layer exist as distinct
particles held together by organic binders. After annealing at
150°C, Ag paste layers consist of a porous network of
cylindrical ligaments connected to spherical vertices at their
ends. Also, morphology of porous Ag coarsens with
increasing annealing time.
During annealing, porosity of the Ag paste layer decreased
with time, Fig. 2(a). There was no observable change in edge
length of samples during annealing, hence it plausible to
assume volume change in the Ag paste layer after annealing
is due to the reduction in thickness only. Mass and thickness
of Ag paste layer decreased during annealing. The rate of
decrease for mass and thickness of the Ag paste layer was
greatest at the start and decreased with annealing time. Mass
and thickness loss after 5 minutes annealing are 2.5 mg
(0.8% of initial mass) and 9 μm (2% of initial thickness),
respectively. This suggest that organic components had
largely vaporized after 5 mins annealing; this is supported by
Fig. 1. Morphology of silver paste: After (a) 1 min (b) 3 min and (c) 5 min annealing; (d) During annealing, sintering between Ag nanoparticlesoccur resulting in formation of porous morphology with cylindrical ligaments joined at their ends to spherical vertices.
A. S. Zuruzi et al. 317
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
Raman spectroscopy data not presented here. Hence, it is
reasonable to assume that mass of Ag in all samples to be
272.8 mg. Since residual organics exist as superficial films,
they do not add to volume of the porous Ag. Although mass
of Ag is 272.8 mg for all samples, thickness of the Ag paste
layer decreased with annealing time due to compaction;
hence the apparent density, ρ of porous Ag increased.
Porosity, ϕ, of porous Ag plotted in Fig. 2(b), was computed
using the equation ; where ρr is relative
density of porous Ag and is given by the ratio between
density of sample, ρ, to that of bulk Ag, ρo; we used
10.49 gcm−3 for ρo.[13] Apparent density, ρ, of the Ag paste
layer in the as-received state and after 5 mins annealing was
3.20 and 5.40 gcm−3 respectively. Porosity, ϕ, decreased
from 0.69 in the as-received condition to 0.48 after 5 mins
annealing.
Porous Ag formed after annealing has significantly higher
electrical conduction than pristine Ag paste. The relative
conductivity, σr, is defined as the ratio between conductivity
of sample, σ, to that of bulk Ag, σo; we assumed σo = 6.30 ×
107 Sm−1.[13] Using appropriate correction factors to com-
pensate for sample geometry, the relative electrical con-
ductivity, σr, of samples annealed at different annealing
times were computed, Fig. 2(b). Electrical conductivity of
porous Ag increased significantly upon annealing at 150°C.
Between 1 and 2 min annealing, σr increased from 0.10 to
0.17; σr was 0.19 after 5 mins annealing.
The increase in electrical conductivity in porous Ag is due
to conducting paths formed during annealing. Although bulk
Ag has a melting point of 961.8°C,[13] surface melting on Ag
nanostructures has been reported between 110 to 150°C.[21,22]
As organic components vaporized, metallic bonds are
formed at contact points between particles through surface
melting and/or diffusion. cAg paste changes from one
consisting of distinct nanoparticles held by organic binders
in the pristine condition, to an electrically conducting porous
structure with cylindrical ligaments connected at their ends
to spherical vertices after annealing.
Electrical conductivity in porous metals depends on
geometry of conduction paths. Accordingly, apparent electrical
conductivity of porous Ag changes as ligaments and joints
coarsen with annealing time. High resolution scanning
electron microscope images show that porous Ag consists of
cylindrical ligaments connected to spherical vertices, Fig.
1(d). Radii of vertices are noticeably larger than those of
cylindrical ligaments. During sintering surface tension draws
material away from ligaments resulting in accumulation at
vertices.[16]
The radius A and length l of ligaments and radius R of
vertices at various annealing times are listed in Table 1. For
each annealing time, 25 sets of data were collected for radius
A and length l of ligaments and radius R of vertices; the
average and one standard deviation for each parameter were
then computed. For any one set, one measurement each of A,
l and R were made at a ligament-vertex joint. In general, the
radius A and length l of ligaments and radius R of vertices
increased with annealing time; spread or variability of these
parameters increased with as well.
4. MORPHOLOGICAL MODEL FOR ELEC-
TRICAL CONDUCTIVITY
Physical models relating electrical conductivity to
morphology of porous metals exist.[18-20] These models were
developed using macroporous metals with microstructures
ϕ 1 ρr– 1 ρ/ρo–= =
Fig. 2. Densification of Ag paste layer: Porosity of Ag pastedecreases while electrical conductivity increases with annealingtime.
Table 1. Parameters of porous Ag after annealing at various times. As annealing time increased, radius and length of ligaments and vertex radiusall increased.
Annealing Time
(min)
Ligament radius, A (nm) Ligament length, L (nm) Noderadius, R (nm)
Average Standard Deviation Average Standard Deviation Average Standard Deviation
1 98 18 373 122 204 36
2 236 46 488 176 240 44
3 296 106 503 253 350 73
4 316 56 524 198 335 42
5 336 89 639 231 366 88
318 A. S. Zuruzi et al.
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
in the range from tens to hundreds of micrometers. However,
at those length scales surface tension, that leads to material
accumulation at vertices at nanoscale, are less pronounced.[16,23]
In the present study, material accumulation results in
formation of spherical vertices. Material accumulation at
vertices has a significant impact as it takes away material
from ligaments causing resistance to increase. The model we
develop here takes into consideration cylindrical ligaments
between spherical vertices.
A Kelvin cell is a truncated octahedron with slight
curvature to hexagonal faces and fills space with minimal
surface area. From an energy perspective and in the context
of morphological evolution during annealing, a model based
on Kelvin cell is attractive as it reduces surface area. Here,
we model porous Ag as an assembly of truncated octahedron
unit cells, Fig. 3(a) and (b). In our model, cell edges are
cylindrical ligaments which are joined at their ends to
spherical vertices. Cylindrical ligaments have radius A and
length l while spherical vertices have radius R, Fig. 3(c). The
height of spherical cap, the volume defined by the overlap
between ligament and vertex, is denoted by H, Fig. 3(d).
Each spherical vertex has 4 cylindrical ligaments attached to
it and forms a tetrahedron. Although our model does not
perfectly describe actual morphology of porous Ag, there is
reasonable agreement with observed structural features, Fig.
3(e). From this point on, we denote the proposed model as
truncated octahedron with cylindrical ligaments and spherical
vertex (CLSV).
The CLSV model was used to compute porosity and
electrical conductivity of porous Ag using average values
of radius A and length l of ligaments and radius R of
vertices measured experimentally. In a truncated octahedron
unit cell, there are 36 cylindrical ligaments and 24 spherical
vertices. Each ligament and vertex are shared by 3 and
4 contiguous unit cells, respectively. The volume of Ag, VAg,
associated with a unit cell is given by
; the negative term in the square bracket
accounts for the volume of overlap with the 4 connecting
ligaments. In Fig. 3(d), the volume of overlap between a
vertex and a ligament is a spherical cap and is denoted as
Vcap. From geometry, height of a spherical cap is H = R −
. Accordingly, length L of each ligament is
, Fig. 3(c). Volume of Ag, VAg,
can then be expressed as
.
Mass of Ag associated with 1 truncated octahedron is VAg
ρ0; where ρ0 is density of bulk Ag, taken as 10.49 gcm−3. The
volume, VUC, of a truncated octahedron unit cell with edge of
length L, is given by ; all
variables in expressions for VUC and VAG are listed in Table 1.
Density of porous Ag, which is the mass of Ag associated
VAg
36
3------πA
2l
24
4------
4
3---πR
3–+=
4
6---πH 3A
2H
2+{ }
R2
A2
–
L l 2 R H–( )+= l 2 R2
A2
–+=
VAg 12πA2l 8πR
3– 4π 4R
22A
2+[ ]+=
R2
A2
–
VUC 8 2L3
8 2 l 2 R2 A2–+[ ]3= =
Fig. 3. Porous silver modeled as truncated octahedrons with cylindrical ligaments and spherical vertices (CLSV). Schematic representation of(a) a single and (b) 3 truncated octahedron unit cells with cylindrical ligaments (edges) and spheres (vertices); (c) Schematic of a ligament joinedto spherical vertices at its ends; (d) Tetrahedral formed when 4 ligaments are joined to a spherical vertex; (e) Overlay of (d) on an SEM image.Note the multiple grains in ligaments and vertex in (e).
A. S. Zuruzi et al. 319
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
per unit volume of 1 truncated unit cell, was determined by
computing the ratio of VAg ρ0 and VUC. Hence, porosity can
be computed .
The octahedron unit cell can be viewed as a network of
discrete conductors. To extract the apparent electrical
conductivity, we treat each edge as a discrete conductor with
resistance RL. Each edge in the truncated octahedron
comprised of a cylinder and two truncated spheres, Fig.
3(c). Each cylinder and sphere is shared by 3 and 4
contiguous unit cells, respectively. Accordingly, resistance
of a single discrete conductor, RL, can be expressed as
the sum of resistances of a cylinder and 2 truncated spheres
; σ0 is conductivity of
bulk Ag and the factors 1/3 and 1/4 accounts for effective
areas for conduction. The expression can be further sim-
plified to give
; where .
In practice, pathways an electrical current take when
passing through a collection of unit cells depend on how
these cells are orientated with respect to the overall direction
of current. We adopt a commonly used analysis method that
assumes current direction normal through 2 parallel faces on
opposite sides of a unit cell.[16,18,19,24] In the truncated
octahedron unit cell, there are 2 distinct current directions.
One direction is between opposing hexagonal faces such as
from aeijfb to txwsmn; this direction is denoted as D6. The
other is between opposite square faces such as from abcd on
top of the unit cell to another square face uvwx at the bottom;
denoted as D4. These faces are shown in Fig. 3(a).
To determine the electrical resistance along D4 and D6, we
solve the respective circuit equivalents; Fig. 4 shows that for
D6. There are 6 possible current flow paths each starting at
spherical vertices. Consider the path from vertices e to t. At
vertex e, current flows through resistor ep to vertex p only as
vertices a, e and i are at the same potential; resistors between
vertices at the same potential are indicated in lighter tone in
Fig. 4. At vertex p, current flows through resistor po to
vertex o only. There is no current flow to vertex q because
vertices p and q are equipotential. At vertex o, by the same
reasoning, current flows to vertex t only. Hence the total
resistance for path from vertices e to t is 3RL. Similar
argument holds for the other 5 current flow paths. Since the
6 current paths are in parallel configuration, the equivalent
resistance of the unit cell for D6 is .
To extract apparent conductivity, σapp, using the model,
one has to consider a truncated octahedron unit cell
having equivalent resistance RUC and filled with ‘homo-
geneous’ porous Ag. By geometry, distance between any
pair of opposing hexagon faces such as aeijfb to txwsmn is
. The average cross-section area of the unit cell
along D6 is . Hence, for a unit cell
filled with porous Ag with apparent conductivity, σapp, one
can write the resistance encountered by current flowing
along D6 as .
The two expressions for RUC6 are equated
and from which conductivity along D6
ϕ 1 ρ/ρ0
–=( )
RL
1
1
3---πA
2
σ0
-----------------2
1
4---σ0
-------- xd
π R2
x2
–[ ]---------------------
0
R2
A2
–( )
∫+=
⎝ ⎠⎜ ⎟⎜ ⎟⎛ ⎞
RL
3l
πA2σ0
--------------4
πR0
--------n R2
A2
– R+
R2
A2
– R–
---------------------------+3l
πA2σ0
--------------4C
πRσ0
------------+ = =
3Rl 4A2C+
πA2
Rσ0
-------------------------= C ln R2
A2
– R+
R2
A2
– R–
---------------------------=
RUC6
RL
2-----
3Rl 4A2C+
2πA2Rσ0
-------------------------= =
a6
= 6L
A6
VUC
a6
--------8 2L
3
6L---------------
8
3------L
2= = =
RUC6
18L
σapp8L2
------------------18
σapp8L----------------
18
σapp8 l 2 R2
A2
–+( )-----------------------------------------------= = =
1
2---
3Rl 4A2
C+
2πA2Rσ0
--------------------------⎝⎛
18
σapp8 l 2 R2
A2
–+( )---------------------------------------------
⎠⎟⎞
Fig. 4. Equivalent circuit for unit cell for D6 current direction: Each resistor represents a unit cell edge which is a ligament with electrical resis-tance RL. There is no current flow across resistors in lighter tone; these connect vertices at the same potential.
320 A. S. Zuruzi et al.
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
was obtained .
Hence, we are able to relate electrical conductivity to
morphological parameters; namely radius A and length l of
ligaments and radius R of vertices.
The preceding methodology was used to derive con-
ductivity along D4, σr, 4. By geometry, distance between
opposing square faces in a truncated octahedron is a4 =
. The average cross-section area along D4 is A4 =
4L2. The unit cell resistance as a function of morphological
parameters is then RUC4 = . Another expression for
RUC4 was obtained after solving the circuit equivalent resistor
network along .[18] Equating these expres-
sions for RUC4 and using appropriate substitutions for C, L
and RL, conductivity along D4 is given by =
.
Figure 5(a) compares electrical conductivity obtained
from experimental measurements and computed using
CLSV model. The well-known Hashin-Shtrikman bound, an
upper limit for isotropic composites, was computed using
volume fraction determined and is included for comparison.[25]
Significant dispersion in computed conductivity along D4
and D6 directions is attributed to variability of radius A and
length l of ligament as well as vertex radius. Nevertheless,
computed electrical conductivities have the same trend as
experimental values. The computed values are lower than
the Hashin-Shtrikman bound, as expected. In addition, our
results agree with those of Dharmasena and Wadley.[18]
Relative electrical conductivity along the D4 pathway from
their corrected truncated octahedron unit cell model, was
lower than those obtained experimentally which is similar to
results obtained in our study.
Electrical conductivity obtained experimentally fits a
power law dependence on annealing time with pre-exponent
and time exponent values of 0.37 and 0.11, respectively; R2
value is 0.86. The corresponding values for the Hashin-
Shtrikman bound are 0.22 and 0.28 with an R2 value of 0.99.
For the D4 and D6 pathways, the pre-exponent values are
0.07 and 0.08 while time exponent values are both 0.48,
respectively. However, the goodness to fit is poor; R2 values
for both are 0.41. The poor fit is due to significant variability
in radius A and length l of ligaments and radius R of vertices.
A few empirical relationships had been proposed to relate
electrical conductivity to porosity for porous metals. The
Koh-Fortini relationship provided good correlation between
these properties without consideration for initial com-
pactness.[26] Recently, Montes et. al. employ tap porosity to
relate these two properties.[27] Tap porosity of a powder
sample is porosity after vibration and is a measure of initial
compactness. We analyzed our experimental data and those
from CLSV model in light of these two empirical relationships.
Electrical conductivity data was fitted to the Koh-Fortini
relationship with a sensitivity factor as a fitting parameter.[28]
For the experimental data, the sensitivity factor was 5.9; the
R2 value is 0.74. For D4 and D6 pathways, the sensitivity
values are 3.8 and 3.2, respectively while R2 values are both
0.96, Fig. 5(b). These sensitivity factor values suggest
conductivity is sensitive to structural features through
σr 6,
σapp
σo
---------2 18πA
2
R
8 3Rl 4A2
C+[ ] l 2 R2
A2
–+[ ]----------------------------------------------------------------------= =
⎝ ⎠⎜ ⎟⎛ ⎞
2 2L
1
σapp 2L--------------------
D4
RUC4
3RL
4---------=⎝ ⎠
⎛ ⎞
σr 4,
σapp
σ0
----------=
2 2πA2R
8 3Rl 4A2C+[ ] l 2 R
2A2
–+[ ]--------------------------------------------------------------------
Fig. 5. Relative electrical conductivity of porous Ag: (a) Agreementto experimental data is better for D6 (flow between opposing hexago-nal faces) than D4 (flow between opposing square faces). Linesshown are power law fits. (b) Filled and dashed lines are fits of elec-trical conductivity data to Koh-Fortini empirical relationship using asensitivity factor as fit parameter. Dotted line is fit to Montes modelusing tap porosity of 0.48; which is experimental porosity after5 mins annealing.
A. S. Zuruzi et al. 321
Electron. Mater. Lett. Vol. 11, No. 2 (2015)
porosity. Agreement to the Montes model was investigated
using tap porosity as a fitting parameter. While the
relationship proposed by Montes et al. gives a better fit, tap
porosity obtained from the fit was negative. Also, tap
porosities computed using conductivity from the CLSV
model were unrealistically low; 0.09 and 0.24 for the D4 and
D6 pathways, respectively. The curve of the Montes model
plotted in Fig. 5(b) is for a tap porosity of 0.48; which is
porosity of porous Ag after 5 min annealing. It can be
observed that the Koh-Fortini relationship provides better
correlation between electrical conductivity and porosity.
5. CONCLUSIONS
We investigated the electrical conductivity of porous Ag
having sub-micrometer structural features. Porous Ag were
formed by sintering nanoparticles at 150°C for up to 5 mins.
Electrical conductivity of porous Ag was about 20 % of bulk
values after 5 mins annealing. A model based on Kelvin
cells (truncated octahedrons) with cylindrical ligaments and
spherical vertices (CLSV) was used to compute electrical
conductivity normal to square (D4) and hexagonal (D6)
faces; better agreement was observed in the D6 direction.
Experimental and computed electrical conductivity in our
present study are correlated well to porosity through the
Koh-Fortini relationship.
ACKNOWLEDGMENT
A.S.Z and S. K. S. are grateful for the use of equipment
and other resources at the Singapore University of
Technology and Design as well as Universiti Kebangsaan
Malaysia, respectively, during the course of conducting this
work. We acknowledge support from Universiti Kebangsaan
Malaysia grant GGPM-2013-079 for this work.
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