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Vol.18, Issue 3 September–December 2016 Nano Trends A Journal of Nanotechnology and Its Applications ISSN 0973-418X (Online) A Nano Technology Platform www.stmjournals.com STM JOURNALS Scientific Technical Medical

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Page 1: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

Vol.18, Issue 3September–December 2016

Nano TrendsA Journal of Nanotechnology and Its Applications

ISSN 0973-418X (Online)

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Page 7: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

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Page 8: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

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Page 9: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

ContentsNanoTrends NanoTrends

eISSN 0973-418X © NSTC 2016. All rights reserved.

1. Preparation, Characterization and Electrical Conductivity of Chitosan-C 30B/MWCNT Nanocomposite Films Dillip Kumar Behera, Kampal Mishra, P.L. Nayak

2. The Effect of CNT Coating on Convective Heat Transfer Coefficient, Heat Flux, Roughness, Pressure Drop of Porous Material with 3-Omega Technique: A Review Yash D. Shah, Vivek Moga, G.D. Acharya, Dilbag Singh

3. A Review: Carbon Nanotube Structures, Properties, Growth and Applications Bal Krishan, Sanjai Kumar Agarwal, Sanjeev Kumar

4. Developing an Empirical Equation for the Diameter of DWNT and RBM Frequency of RRS Adnan Siraj Rakin

5. Modification of Structural and Electrical Properties of GDC with Sb3+ Ions Chitra Priya N.S., Sandhya K., Deepthi N. Rajendran

6. Report on the Nanoelectronic-Designs of the High Electron Mobility Transistors by a Certain Range of Simulation Studies in the IMPRINT Project of the Government of India

Subhadeep Mukhopadhyay, Ashish Prajapati, Sanjib Kalita

1

6

27

Vol.18, No. 3

23

10

36

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Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 1-5 © STM Journals 2016. All Rights Reserved Page 1

Preparation, Characterization and Electrical Conductivity

of Chitosan-C 30B/MWCNT Nanocomposite Films

Dillip Kumar Behera1, Kampal Mishra

1, P.L. Nayak

2,* 1Department of Physics, Siksha ‘O’ Anusandhan University, Bhubaneswar, Odisha, India

2P.L. Nayak Research Foundation, Synergy Institute of Technology, Bhubaneswar, Odisha, India

Abstract In this research programme, organoclay clay Cloisite 30B (C 30B) and Multi walled carbon

nanotubes (MWCNTs) were successfully blended with the biopolymer Chitosan (CS). The

polymer nanocomposites were characterised by various techniques like Fourier Transmission

Infrared spectroscopy (FTIR), X-ray Diffraction (XRD) and Scanning Electron Microscope

(SEM). From the results, it was found that intercalation or nearly exfoliation has been

occurred between the polymer and the clay. Electrical conductivity was also measured by

Four-probe method and the conductivity value of the polymer nanocomposite shows

encouraging results.

Keywords: Chitosan, C 30B, MWCNT, Electrical Conductivity

INTRODUCTION Since the last 20 years, research in bio-

polymeric field is mainly focused on chitosan

which is a cationic polymer composed of

repeating units of Poly β (1→4) 2 amino 2

deoxy-D-glucosamine is the deacetylated

product of chitin. It is used for various

applications in diversified fields because of its

unique properties like nontoxicity, film forming

ability, biodegradability and low permeability

to oxygen and antimicrobial activity [1, 2].

The films formed have good mechanical

properties and are water permeable in nature

[1]. Because of the presence of hydroxyl and

amine groups, it could easily form hydrogen

bonds with other materials [1–4]. It can easily

soluble in weak acids [1].

Similarly, CNTs are also being used in various

field of research like physical, chemical and

biomedical fields [5]. Because of the high

aspect ratio, good physical and electrical

properties and carbon composition of CNTs, it

has been used as a vehicle for drug delivery,

gene delivery or for the preparation of

scaffolds for tissue engineering [6–9].

In this research program, chitosan has been

blended with MWCNT along with

organophilically charged clay C 30B. It is an

organically modified Na in MMT with

quaternary ammonium salt [2]. Many

researchers have found that organically modified

clay is better compatible with the polymer than

the nonmodified clay for the preparation of

polymer nanocomposites [10–14].

EXPERIMENTAL METHOD

Materials

Chitosan was purchased from India Sea foods,

Kerala, India. MMT was procured from

Southern Clay, USA. Multiwalled carbon

nanotube (>90% purification) used in this

work was purchased from Cheap Tubes (USA,

10–20 nm diameter). Other reagents like

Chloroform, Thionyl chloride hydrochloric,

sulfuric and nitric acid (Sigma Chemicals)

were of analytical grade.

Preparation of CS/C 30B/MWCNT

Nanocomposite Films

Briefly, 300 ml of 2.5 wt% of chitosan (CS)

solution was prepared by dissolving required

amount of chitosan in 2% acetic acid.

Calculated amount of C 30B and MWCNT

were added in 8.0 ml of distilled water followed

by sonication for 20 min at room temperature.

Then the chitosan solution was added to the C

30B/MWCNTs mixture and stirred

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Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 6-9 © STM Journals 2016. All Rights Reserved Page 6

The Effect of CNT Coating on Convective Heat Transfer

Coefficient, Heat Flux, Roughness, Pressure Drop of

Porous Material with 3-Omega Technique: A Review

Yash D. Shah*, Vivek Moga, G.D. Acharya, Dilbag Singh

Department of Mechanical Engineering, Atmiya Institute of Technology and Science,

Rajkot, Gujarat, India

Abstract The paper deals with the tentative survey on the heat transfer and pressure drop

characteristics of CNT glaze on a stainless steel substrate in a rectangular comprehensive

channel with water as the working fluid. The extremely high thermal conductivity of individual

carbon nanotubes was predicted hypothetically and pragmatic experimentally. Under both,

laminar and turbulent flow conditions, the experiments were conducted with Reynolds number

unpredictable from 500–2600. A nanofluid, which depends on multi-walled carbon nano-

tubes; due to which, its heat transfer uniqueness is experimentally examined for turbulent flow

in a straight tube. The experimental results using an uncoated stainless steel plate were

compared with that of the coated plate results. The augmentation in Nusselt number in the

turbulent flow was less compared to the laminar section. The coating increased the roughness

on the surface and also there was adverse effect on the pressure drop, particularly, in the

turbulent flow area. Equivalent circuit simulations and antentative self-heating 3-omega

method were used to establish the peculiarity of anisotropic heat flow and thermal

conductivity of single MWNTs, bundled MWNTs and aligned, free-standing MWNT sheets.

The thermal conductivity of individual MWNTs grown by chemical vapor deposition and

normalized to the density of graphite is much lower (kMWNT=600±100 W m−1 K−1) than

theoretically predicted. Coupling within MWNT bundles decreases this thermal conductivity

to 150 W m−1 K−1.

Keywords: Adhesive, CNT coating, heat transfer enhancement, Nusselt number

INTRODUCTION This paper describes the significance on heat

transfer. In order to enhance the effectiveness

of power executive in any research area, the

heat transfer improvement plays an important

role. There is different distinctiveness in heat

transfer; they are classified into two types; i.e.

active and passive techniques [1]. Electronic

fields and shell vibration are the peripheral

control sources in active techniques, although

the second technique, i.e. passive technique

includes, surface coating, intrinsic fins, surface

roughness etc. With the help of the passive

techniques, we can eliminate restrictions faced

by the active techniques. Due to this, there is

large development in passive heat transfer

field. Surface coating is one of the most

successful ones among the different passive

techniques which are classified. Shell coating

can be universally controlled, micro controlled

and nano controlled coating. The normally

formed structures with nano controlled

coatings are nano-porous and nano-finned

structures [1–4]. Heat transfer potential is most

successfully used currently in the field of

micro and nanotechnology.

For covering nano absorbent and nano fins

over the surface, a variety of covering

techniques are available. Nano absorbent

coverings are usually obtained by using scatter

pyrolysis [1], and thermal spray [4]. Shell

covering gives nano controlled coating, due

which it is the most preferred method. There

are following different reasons for selection of

shell covering. They are as follows.

Effective Shell Region

With the reduction in dimension of the

element, the proportion of shell area to

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Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 10-22 © STM Journals 2016. All Rights Reserved Page 10

A Review: Carbon Nanotube Structures, Properties,

Growth and Applications

Bal Krishan1,*, Sanjai Kumar Agarwal

1, Sanjeev Kumar

2

1Department of Electronics Engineering, YMCA University of Science and Technology, Faridabad,

Haryana, India

2Department of Mechanical Engineering, DNS College of Engineering and Technology, Didauli,

Amroha, Uttar Pradesh, India

Abstract In this paper, basic issues regarding carbon nanotube are discussed since CNT is the soul of

carbon nanotube field-effect transistor, which is one of devices for future nanoelectronic

applications. In this paper, the structure, properties, growth process and applications of

carbon nanotube are presented in small and easy description. This paper investigates the bits

of knowledge of the most exceptional use of carbon nanotube in electronic field, the carbon

nanotube field-effect transistor (CNFET). The inspiration of examination in CNFET is fuelled

by the interesting electrical features of CNT, extraordinarily the semiconducting feature. In

addition, the ceaseless push to discover future nanoelectronic device that can execute as

incredibly as MOSFET, additionally pushes the exploration of CNFET to be more forceful.

Keywords: Carbon nanotube, nanoelectronic, CNFET, growth

INTRODUCTION A Japanese scientist, Iijima S, studied the

carbon powder produced by a direct current

arc-discharge in the middle of carbon

electrodes in 1991, he found a range of

molecules that have been the item of extreme

scientific research ever since. With the help of

a HRTEM microscope, a long molecular

structure consisting of several coaxial

cylinders of carbon was found. This

investigation drives the research field for

CNT, although the production of carbon

filaments had already commenced in 1980s

and 1970s via the synthesis of vapor grown

carbon fibers.

The first carbon nanotube discovered is the

multi-walled carbon nanotube, giving the

unique structures and properties of CNTs that

might give some special applications. In 1993,

single-walled carbon nanotube was discovered

by Iijima and his group through experiment

work.

The discovery of single walled carbon

nanotube is more important since the structure

is more basic and became the premises for the

theoretical studies of large bodies [1–22].

STRUCTURE OF CARBON

NANOTUBE Carbon nanotube (CNT) is an empty cylinder

that is made of one or more concentric layers

of carbon atoms in a lattice arrangement [16].

Fundamentally, the structure can be separated

into two parts: multi-walled nanotubes and

single walled nanotubes.

Single-Walled Carbon Nanotube

A graphene sheet is rolled into a cylindrical

shape so that the structure in 1-D with axial

symmetry is known as single walled nanotube.

SWNT is generally has a diameter of 1–2 nm

and a length of up to 100 µm. Single-walled

nanotube can be classified into three

categories: armchair, zigzag and chirality.

Armchair nanaotube and zigzag nanotube are

otherwise called a chiral SWNT, since its

mirror image is identical to the native

structure. The title of armchair and zigzag

appear from the shape of cross-sectional ring

as given in Table 1.

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Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 23-26 © STM Journals 2016. All Rights Reserved Page 23

Developing an Empirical Equation for the Diameter of

DWNT and RBM Frequency of RRS

Adnan Siraj Rakin* Department of Electronics and Electrical Engineering, Bangladesh University, Dhaka, Bangladesh

Abstract Many experiments of resonant Raman spectroscopy have been carried out to successfully

assign the radial breathing mode frequency of the inner and outer tube of double walled

carbon nanotube. Experimental values show clear indication that these frequencies depend

heavily on inter tube interaction. All the previous efforts to establish a relation between RBM

frequency and diameter have not taken the inter-tube distance factor into account. Here, for

the first time an empirical relation between the RBM frequency and diameter of the tubes is

presented for DWNT taking the inter-tube interaction effect into account, which can

accurately predict the diameter of both, the inner and outer tube from the RBM frequency.

This relation can be significant in future and will open a new door for finding the chirality of

each tube in DWNT.

Keywords: Radial breathing mode, double walled carbon nanotube, interaction

INTRODUCTION Three decades after carbon nanotube began its

journey, the remarkable features of this noble

material make it one of the most top research

interests. Wide field of exciting implications,

ranging from bioelectronics and computation

at quantum level to science of materials and

photonics are the characteristics that set carbon

nanotube above the rest. Among all the

available tools that are used for the

characterization of nanotube, Raman

spectroscopy is found to give more accurate

information as it is more robust to

environmental changes.

The RBM frequency and diameter relationship

is more complex in double walled carbon

nanotube than in single walled nanotube

because of factors like wall-to-wall stresses

and charge transfer [1]. Previous

investigations indicated that RBM frequencies

have a systematic upward shift for the

SWCNTs in the bundles compared with the

isolated ones due to the van der Waals

interaction [2, 3]. Many authors have

suggested different equations for determining

the diameter from the RBM frequency. Most

of them suggested a linear relation, which

states that WRBM is inversely proportional to

diameter. One suggested equation is,

W=a/d+b. Where, w= radial breathing mode

frequency, d= diameter, a, b are constants.

Typical value of a=234 and b=10 [4].

Another relation suggested previously is the

exponential relation using the diameter

difference and interactions between the walls

of the tube [5]. Other authors have used a

modified form of the inverse relation with

diameter. One of those equation is w=a/d^b;

where and b are constant. Typical values of

a=238, b=.93 [6]. However, this equation fails

to take into account the chirality, curvature and

inter tube interaction affect into consideration.

Thus it can be concluded that there might be

an error leading to the diameter found from

this equations. Here, it was assumed that the

influence of the van der Waals interaction

between the outer and the inner tube in a

DWCNT is the same as that in SWCNT

bundles. But, rather than this linear shifting

there must be a second order effect in DWNT

that would control the shifting. In an attempt

to resolve this matter, the relation of RBM

frequency with diameter was modified.

DEVELOPING THE EQUATION Experimental Data

If tunable Raman spectroscopy is compared

with Raman mapping procedures and electron

Page 14: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 27-35 © STM Journals 2016. All Rights Reserved Page 27

Modification of Structural and Electrical Properties of

GDC with Sb3+

Ions

Chitra Priya N.S., Sandhya K., Deepthi N. Rajendran*

Department of Physics, Government College for Women, Thiruvananthapuram, Kerala, India

Abstract Gadolinium doped cerium (GDC) is a potential candidate as electrolyte in the solid oxide fuel

cells operating in intermediate temperatures. The optimum performance of GDC is obtained

only when sintered at higher temperatures (~1400°C), where cerium is prone to reduction.

Improvement in the conductivity and stability of GDC is expected by doping it with trivalent

ions. In the present context, successful attempts have been made to synthesize

Ce0.8Gd0.1Sb0.1O2-δ by solid state reaction and solution combustion methods. X-ray diffraction

pattern confirms the cubic fluorite structure of the synthesized samples with nano-crystallite

size. On doping GDC with trivalent ion Sb3+

, the crystallite size is decreased and the sintering

temperature is reduced. The combustion samples have lesser crystalline size and greater

lattice parameter compared to the solid state sample. Low activation energy is obtained for

the synthesized samples.

Keywords: Electrolyte, solution combustion, X-ray diffraction, activation energy, ionic

conductivity

INTRODUCTION Fuel cells, the electrochemical devices which

convert chemical energy of fuels such as

hydrogen, natural gas, hydrocarbons etc.

directly into electricity and heat, have high

generating efficiency along with ecofriendly

operation and clean energy production [1].

Solid oxide fuel cell (SOFC) is more

advantageous among the different fuel cells,

due to their high thermal efficiency, excellent

long term performance stability and fuel

flexibility [1, 2]. For attaining high efficiency,

cathode and anode should have high electronic

and ionic conductivity and sufficient open

porosity along with a dense, gas tight, thin

pure ionic conductor as electrolyte which is

stable under reducing and oxidizing

environments and all the three should be

chemically compatible with each other. The

interconnects should have good thermal and

electrical conductivity and high temperature

corrosion resistivity [1, 3].

The main limitation of SOFC is its high

operating temperature(~1200°C) which results

in the expensive nature of materials for cell

and manifold components and due to this, their

choice is restricted [1, 4]. Research is going on

to lower the operating temperature of SOFCs

(500–800°C), to reduce cost and durability

without compromising efficiency [4, 5]. But

the low temperature operation makes problems

such as decrease in electrolyte conduction and

increase in electrode polarization. These

factors in turn reduce cell voltage and

efficiency of the cell [2, 6]. It is expected that

the cell efficiency can be modified along with

a reduction in operating temperature by

developing novel electrolyte materials.

The commonly used electrolytes are yttria

stabilized zirconia (YSZ), magnesium

strontium lanthanum gallates (LSGM), and

rare earth doped CeO2 (GDC/SDC) [3, 4–9]. In

the intermediate temperature range,

gadolinium doped ceria (GDC) or samarium

doped ceria (SDC) are considered as better

ionic conductors and hence they can be used

as electrolyte in ITSOFCs. They require high

sintering temperature for better performance

which leads to reduction of cerium ions and

causes electronic conduction [4, 6, 10, 11].

Steele et al. and Jadhav et al. showed that 10%

Gd doped CeO2 electrolyte has highest ionic

conductivity (~0.02 Scm-1

at 600°C and

~0.12 S cm-1

at 800°C in air respectively) [5, 6,

Page 15: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

Nano Trends: A Journal of Nanotechnology and Its Applications

Volume 18, Issue 3, ISSN: 0973-418X (online)

©NSTC (2016) 36-58 © STM Journals 2016. All Rights Reserved Page 36

Report on the Nanoelectronic-Designs of the High

Electron Mobility Transistors by a Certain Range of

Simulation Studies in the IMPRINT Project of the

Government of India

Subhadeep Mukhopadhyay*, Ashish Prajapati, Sanjib Kalita Department of Electronics and Computer Engineering, National Institute of Technology Arunachal

Pradesh, Ministry of Human Resource Development (Government of India), Yupia, Papum Pare,

Arunachal Pradesh, India

Abstract In this report, total 10755 individual simulation-outputs are reported according to the

performed simulation studies on the nanoelectronic aspects of the high electron mobility

transistors (HEMTs) by the nanoelectronic-designs of these advanced semiconductor devices

in the purpose of the advancement of ‘science and engineering’ in this IMPRINT-Project as

officially started on 3rd October 2016 at 03:00:00PM. This series of simulation work has

been performed using the SILVACO-ATLAS software tool on the basis of already established

theories related to the semiconductor-physics of HEMTs. In this report, all the simulation

results are manifested by graphical presentations with minimum explanation to maintain the

length of this report within a certain limit. Total 51 individual simulation-data related

graphical-presentations are shown in this report. One novelty of this report is the meticulous

nanoelectronic approach to design the HEMTs. Also, the detailed simulation work of this

report is a research based idea for further research work by other research groups. This

report is an academic-record of the Indian academics. This report may be helpful to develop

the Indian state Arunachal-Pradesh. This particular IMPRINT-Project corresponding to the

proposal-number of 5576 is selected for the financial-support of 25 million Indian-Rupees

(0.375 million US-Dollars approximately) to 40 million Indian-Rupees (0.600 million US-

Dollars approximately).

Keywords: Mole fraction, drain current, drain voltage, gate voltage

INTRODUCTION Nanostructure is defined as any structure

having the structural-dimension of less than

one micrometer. The classical-mechanical

concepts are no-no in nano. Only, quantum-

mechanical principles are able to describe the

nanotechnology related phenomena. The

modern electronic semiconductor devices are

being fabricated by the nanofabrication

technologies for industrial applications [1–3].

At present, nanoelectronics is the emerging as

well as popular research field in the world of

science and technology [1–3]. Probably, the

future aircrafts and space-crafts will be

fabricated by the nanoelectronic components.

India as country is trying to contribute in the

field of nanoelectronics as maximum as

possible. For this purpose, the major

collaborative countries with India are the

United States of America, United Kingdom,

Russia, Canada, France and Australia.

Government of India has already started the

Indian nanoelectronics users program (INUP)

in this 21st century of 3rd millennium.

Among different semiconductor devices in

nanoelectronic regime, the high electron

mobility transistors (HEMTs) are one

particular thrust area of research [1–10].

Scientists and researchers are trying to develop

the theories behind the working principles of

HEMTs with a parallel response of

nanofabrication technologies [1–21]. Quantum

mechanics is playing an important role in this

regard [2]. In the bibliography (references) of

this report, only few selected publications

Page 16: Nano Trends-A Journal of Nano Technology & Its Applications vol 18 issue_3

Vol.18, Issue 3September–December 2016

Nano TrendsA Journal of Nanotechnology and Its Applications

ISSN 0973-418X (Online)

conducted

Ch Instrumentation/ /

/Energy Science/ /

22

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