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Department of Mechanical Engineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for Individual Deliver The Promise GMR Institute of Technology, Rajam MEMRISTOR (THE FOURTH MISSING ELEMENT) PRESENTATION BY B.ASHOK KUMAR GMRIT-EEE 3/31/2015

MEMRISTOR BY ASHOK

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m MEMRISTOR(THE FOURTH MISSING ELEMENT)

PRESENTATION BY

B.ASHOK KUMAR

GMRIT-EEE

3/31/2015

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1)INTRODUCTION

2)COMPARSION

3)WORKING

4)TYPES

5)APPLICATIONS

6)CONCLUSION

7)REFERENCES

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INTRODUCTION

A resistor that retains a memory of its last programmed

state (resistance) is a memory-resistor.

Memristors resistance varies according to a device

memristance function,allowing via tiny read charges,

access to a “history” of applied voltage.

Memristor exhibit their unique properties primarily at the

nano scale. And also such properties have been observed

in action prior to the HP lab prototypes.

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HISTORY:# Year Who Where

0 ?? Unknowns Those who may have observed memristance, while studying

thin films.

1 1960 Bernard Widrow develops a 3-terminal device called a "memistor" as a new

fundamental circuit component forming the basis of a neural network

circuit called ADALINE (ADAptive LInear NEuron).

2 1972 Leon Chua His student Sung Mo Kang publish a paper entitled "Memristive

Devices and Systems" in the Proceedings of the IEEE generalizing the

theory of memristors and memristive systems

3 2008 Stanley Williams Dmitri Strukov, Gregory Snider, Duncan Stewart, and Stan Williams,

of HP Labs, publish an article in Nature

"The missing memristor found"

identifying a link between the 2-terminal resistance switching

behavior found in nano scale systems and Leon Chua's memristor

4 2009 XiaobinWang, Yiran Chen, Haiwen Xi, Hai Li, and Dimitar Dimitrov

publishes article entitled “Spintronic Memristor Through Spin-

Torque-Induced Magnetization Motion” in IEEE Electron Device

Letters

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COMPARISON

a)G.S.OHM b)M.FARADAY

c)J.HENRY d)LEONO.CHUA

1827 1745

1831 1960

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ELEMENT TYPE UNIT

R =V/I Passive & Linear Ω(ohms)

L=ф*I Passive & Linear H(henry)

C=Q/V Passive & Linear F(farad)

M=ф/q Passive & Non-Linear Ω (ohms)

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• Leon Chua’s original graph of the hypothetical memristor’s behavior is shown at top right;

– The graph of R. Stanley Williams’s experimental results in the Nature paper is shown below.

• The loops map the switching behavior of the device:

– It begins with a high resistance, and as the voltage increases, the current slowly increases.

– As charge flows through the device, the resistance drops,

– Then, as the voltage decreases, the current decreases but more slowly, because charge is flowing through the device and the resistance is still dropping.

• The result is an on-switching loop.

– When the voltage turns negative, the resistance of the device increases, resulting in an off-switching loop.

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Applied voltage makes the

oxygen vacancies (+ve) to

shift towards the –ve

voltage

P

T

P

T

TiOv(2-x)

TiO2

3

nm

2 nm

OxidizedReduced

(-)ve (+)ve

CONSTRUCTION AND OPERATION:

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Tio2-x

Tio2

Ron

Roff

WORKING:

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TYPES

These type of memristors primarily rely on different

material properties of thin film atomic lattices that exhibit hysterisis

under the application of charge.

1. Molecular and ionic thin film memristive systems:

The list of different memristor types below shows there are a wide variety of

systems that exhibit memristive behaviour and more are being discovered as

indusries begin to build out their research prototyping and manufacturing

infrastructures.

a) Titanium dioxide memristors:

b) polymeric(ionic)memristors:

c) Manganite memristive systems:

d) Resonant-tunneling diode memristors:

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These systems as opposed to molecular and ionic nanostructure

based systems, rely on the property of degree of freedom in electric spin. In

this system electron spin polarisation is altered

2.SPIN BASED AND MAGNETIC MEMRISTIVE SYSTEMS:

3-TERMINAL MEMRISTORS:

The advanced technology of electroplating was used to demonstrate the

viability of a non solid state three terminal

Memristor by Bernard Widrow at Stanford. The conductance was described by

the time integral of current.

a) Spintronic memristors:

b) Spin Torque Transfer (STT) MRAM:

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APPLICATIONS Nonvolatile memories

Low power and remote sensing

•Memristors can retain memory states and data in power off modes.

•The fab prototypes resistance is read with alternating current so

that the stored value remains unaffected.

•NVRAM and SSD competitors could start showing on in the market

within 2 years.

•Coupled with memcapacitors and meminductors, the complimentary

circuits to the memristor which allow for the storage of charge.

•Memristors can possibly allow for nano-scale low power memory and

distributed state storage, as a future extension of NVRAM capabilities.

•These are currently all hypothetical in terms of time to market.

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Analog Computation and Circuits:

Cross Bar Latches as Transistor Replacements (or) Augmentors:

Solid-state memristors can be combined into

devices called crossbar latches, which could

replace transistors in future computers, taking

up a much smaller area.

•Analog Computations embodied a whole area of research which unfortunately

were not as scalable, reproducible or dependable as digital solutions.

• These memristors will now allow us to revisit a lot of the analog science

that was abandoned in the mid 1960’s.

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Circuits which mimic Neuromorphic and Biological Systems:

Programmable logic and signal processing:

•The memristive applications in these areas will remain relatively the

same, because it will only be a change in the under lying physical

architecture ,allowing their capabilities to expand to most likely be

unrecognizable as related.

•Simple electronic circuits based on an LC network and

memristors have been built ,and used recently to model

experiments on adaptive behaviour of unicellular organisms.

•Modeling a brain using rationated mathematics .

•Memristor cat brain.

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CONCLUSION

MEMRISTOR will change circuit design in the 21ST

century.

Utilization memristors effectively changes standard

protocals and structures.

Memristors are a new class of device with very different

but useful properties for memory storage.

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REFERENCE:

• "Memristor—The Missing Circuit Element",

IEEE Transactions on Circuit Theory by Leon O

Chua (1971)

• "Memristive Devices and Systems" in the

Proceedings of the IEEE by Leon Chua and his

student Sung Mo Kang (1976)

• "The missing memristor found" Nature (may2008)

• IEEE Spectrum - The Mysterious Memristor, by

Sally Adee (may 2008)

• IEEE Spectrum - How We Found the Missing

Memristor, by R. Stanley Williams (dec 2008)

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THANK YOU

3/31/2015