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0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45°
0.046 (1.16)0.036 (0.92)
1 3
0.030 (0.76)NOM
0.195 (4.95)0.178 (4.52)
0.230 (5.84)0.209 (5.31)
0.500 (12.7)MIN
0.255 (6.47)0.225 (5.71)
Ø0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES• Hermetically sealed package
• Narrow reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTIONThe L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor CorporationDS300306 6/01/01 1 OF 4 www.fairchildsemi.com
1EMITTER
(CONNECTED TO CASE)COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICONPHOTODARLINGTON
L14F1 L14F2
www.fairchildsemi.com 2 OF 4 6/01/01 DS300306
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITSCollector-Emitter Breakdown IC = 10 mA, Ee = 0 BVCEO 25 — VEmitter-Base Breakdown IE = 100 µA, Ee = 0 BVEBO 12 — VCollector-Base Breakdown IC = 100 µA, Ee = 0 BVCBO 25 — VCollector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — 100 nAReception Angle at 1/2 Sensitivity θ ±8 DegreesOn-State Collector Current L14F1 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 7.5 — mAOn-State Collector Current L14F2 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 2.5 mARise Time IC = 10 mA, VCC = 5 V, RL =100 Ω tr 300 µsFall Time IC = 10 mA, VCC = 5 V, RL =100 Ω tf 250 µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating UnitOperating Temperature TOPR -65 to +125 °CStorage Temperature TSTG -65 to +150 °CSoldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °CSoldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °CCollector to Emitter Breakdown Voltage VCEO 25 VCollector to Base Breakdown Voltage VCBO 25 VEmitter to Base Breakdwon Voltage VEBO 12 VPower Dissipation (TA = 25°C)(1) PD 300 mWPower Dissipation (TC = 25°C)(2) PD 600 mW
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
NOTE:1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.3. RMA flux is recommended.4. Methanol or isopropyl alcohols are recommended as cleaning agents.5. Soldering iron tip 1/16” (1.6mm) minimum from housing.6. As long as leads are not under any stress or spring tension.7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
L14F1 L14F2
HERMETIC SILICONPHOTODARLINGTON
Figure 1. Light Current vs. Collector to Emitter Voltage
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.1
1.0
10
100
5 10 15 20 25 30 35
I L, N
OR
MAL
IZED
LIG
HT
CU
RR
ENT
Figure 4. Angular Response
0-90°
40
30
20
10
50
60
90
80
70
100
110
-70° -50° -30° -10° 10° 30° 50° 70° 90°
REL
ATIV
E AM
PLIT
UD
E
Figure 2. Relative Light Current vs. Ambient Temperature
.01
.02
.04
.08
.06
-50 -25 0 25
.1
.2
.4
.6
.8
2
468
1.0
10
1251007550
I L /
I L @
25°C
, RE
LAT
IVE
LIG
HT
CU
RR
EN
T
T, TEMPERATURE (°C)
I L, L
IGH
T C
UR
REN
T (m
A)
Figure 6. Light Current vs. Relative Switching Speed
0.1
1.0
10
100
0.01 0.1 1.0 10010
5.0 mW/cm2
2.0
1.0
NORMALIZED TO:VCE = 5 VEe = .2 mW/cm2
Figure 3. Spectral Response
0.4
400 600
0.8
0.7
0.6
0.5
0
0.3
0.2
0.1
0.9
1.0
500 900 12001000 1100
REL
ATIV
E SP
ECTR
AL R
ESPO
NSE
800700
λ, WAVE LENGTH (NANOMETERS) DEGREES
RELATIVE SWITCHING SPEEDtd + tr + ts + tf
.5
.2
.1
.05
VCE = 5 VH = .2 mW/cm2
NORMALIZED TO:RL = 100 ΩIL = 10 mA
LOAD RESISTANCE10 Ω
100 Ω
1000 Ω
VCC = 10 V
OUTPUTPULSE
tON = td + tr tOFF = ts + tfINPUT PULSE
td
tr ts
tf
INPUTLED56
LED
L14F
RL OUTPUTI
90%
10%
1.0 V
Figure 5. Test Circuit and Voltage Waveforms
VCC
DS300306 6/01/01 3 OF 4 www.fairchildsemi.com
L14F1 L14F2
HERMETIC SILICONPHOTODARLINGTON
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUMEANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILDSEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use providedin labeling, can be reasonably expected to result in asignificant injury of the user.
2. A critical component in any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
DS300306 6/01/01 4 OF 4 www.fairchildsemi.com
L14F1 L14F2
HERMETIC SILICONPHOTODARLINGTON
