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Determination of rate of change of current inside the 3 ghz silicon chip for any given noise at 100amp maximum saturation current

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Bidyut K. Bhattacharyya, Nivedita Laskar, Suman Debnath, and Sikha Bhattacharya, "Determination of Rate of Change of Current Inside the 3 Ghz Silicon Chip for Any Given Noise at 100amp Maximum Saturation Current," International Journal of Electrical Energy, Vol.1, No.2, pp. 67-71, June 2013. doi: 10.12720/ijoee.1.2.67-71 link to download the paper http://www.ijoee.org//index.php?m=content&c=index&a=show&catid=32&id=30

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Page 1: Determination of rate of change of current inside the 3 ghz silicon chip for any given noise at 100amp maximum saturation current
Page 2: Determination of rate of change of current inside the 3 ghz silicon chip for any given noise at 100amp maximum saturation current

Bidyut K. Bhattacharyya, Nivedita Laskar, Suman Debnath, and Sikha Bhattacharya, "Determination of Rate of Change of Current Inside the 3 Ghz Silicon Chip for Any Given Noise at 100amp Maximum Saturation Current," International Journal of Electrical Energy, Vol.1, No.2, pp. 67-71, June 2013. doi: 10.12720/ijoee.1.2.67-71

• http://www.ijoee.org//index.php?m=content&c=index&a=show&catid=32&id=30