Transcript
Page 1: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

The MOS structure

Page 2: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

The MOS structure

Band diagram

Page 3: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

� Ideal case (EF already at the same level)

Page 4: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

� Example with Si-P

Page 5: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

� Example with Si-N

Page 6: The MOS structure - Università Trieste · MOS, with VG translated by VFB. Si02 Fig. 2.1 The capacitor. Metal Insulator Semiconductor . Energy band dragram Applied —o …

� If the Fermi levels are not aligned, even with VG=0 the

bands are bent

� Let us define VFB as the VG which flattens the bands;

with VG=VFB we can repeat what we said for the ideal

MOS, with VG translated by VFB.


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