November 3-8, 2002 D. Bortoletto - Vertex 2002 1
Silicon Sensors for CMS Silicon Sensors for CMS
Daniela BortolettoPurdue University
Grad students: Kim Giolo, Amit Roy, Seunghee Son
Engineering Physicist: Gino Bolla
• OUTLINE– Design consideration for Pixel sensors for the LHC: p-on-n
versus n-on-n and p-stops versus p-sprays – Summary results from CMS Forward Pixel (FpiX) first
prototype submission Sintef 1999 (received 2000)– Design improvements and results from Sintef 2001
submission (received 2002)– Irradiation studies up to 1015 neq/cm2
– Barrel sensor design (Tilman Rohe)– Conclusions
November 3-8, 2002 D. Bortoletto - Vertex 2002 2
FPIX COLLABORATIONFPIX COLLABORATIONPSI (Horisberger) ETHU. ZurichU. BaselIHEP WienRWTH Aachen
US CMSUC Davis NorthwesternFermilab PurdueJohns Hopkins Rutgers Mississippi
BARREL
2 Layers, 17(27) Mpixels
FORWARD DISKS:4 disks, 12 Mpixels1.5<<2.5
November 3-8, 2002 D. Bortoletto - Vertex 2002 3
Design ConsiderationsDesign Considerations• The LHC detectors will be
hybrid pixels– Readout chip is very
complex (500 K transistors)
– Sensor are simpler (50k diodes)
• Irradiation changes silicon– Type inversion of the bulk
material n p– Increase of effective doping and
full depletion voltage– Complex annealing and anti-
annealing behavior– Undepleted bulk becomes high
resistive– Increase trapping of signal
charge
November 3-8, 2002 D. Bortoletto - Vertex 2002 4
Radiation HardnessRadiation Hardness• The CMS pixel design has
been optimized for a dose of 61014 neq/cm2
• Fluence is dominated by ’s. Oxygenation is expected to be useful
• Crucial to limit the periods without cooling because of anti-annealing
Rose collaboration
November 3-8, 2002 D. Bortoletto - Vertex 2002 5
Design ConsiderationsDesign Considerations
p-on-n
n-on-n
November 3-8, 2002 D. Bortoletto - Vertex 2002 6
Design considerations Design considerations • p-on-n option
– require sensors to be depleted for operation:
• High voltage after irradiation
• Complex guard ring design• Difficult module
construction • Possible damage to the
chip because of high V and small distance between chip and the sensor
• Protection of unconnected pixels may be necessary
• To reduce trapping small gap between pixels
Tilman Rohe pixel 2002
November 3-8, 2002 D. Bortoletto - Vertex 2002 7
Design considerations Design considerations • n-on-n option:
– Allows operation of undepleted sensors after type inversion
– Requires double sided processing
• More expensive• Lower yield • Testing with bias grid
(Atlas), resistive network (CMS)
– N-side pixel isolation• P-stops (CMS)• P-spray (Atlas)
– Design optimized for irradiation
• Guard rings • Unbonded pixel protection
Tilman Rohe pixel 2002
November 3-8, 2002 D. Bortoletto - Vertex 2002 8
Guard ring Design Guard ring Design • Guard rings must satisfy two requirements:
– Limit the lateral extension of the depletion region– Prevent breakdown at the device edge
• These goals can be achieved by:– Gentle potential drop towards
the edge– Increasing gaps from inner to
outer region– Field plates to reduce the field
November 3-8, 2002 D. Bortoletto - Vertex 2002 9
Eleven guard ring design (Sintef 1999)
After irradiation11 Guard Ring Diodes
1.E-10
1.E-09
1.E-08
1.E-07
0 500 1000
Reverse Bias Voltage (V)
Cu
rren
t (A
)
Diode 3Diode 4 Diode 11Diode 14Diode 20
Guard Ring PerformanceGuard Ring Performance
Diode
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 100 200 300 400 500 600 700 800
Reverse Bias (V)Le
akag
e C
urre
nt (A
)
S22P47
S22P29
S24P29
S4P47
= 61014 neq/cm2
Before irradiation
No breakdown up to 800 V even after irradiation to = 61014 neq/cm2 Guard ring design frozen.
November 3-8, 2002 D. Bortoletto - Vertex 2002 10
N-side isolation N-side isolation • P-stops
– Standard processing for most vendors– Additional mask– Alignment and design rules can lead to
large gaps• P-sprays
– No extra mask– Lower cost – No alignment– Better performance after irradiation
• Moderated p-sprays– No additional mask– Good performance before and after irradiation
November 3-8, 2002 D. Bortoletto - Vertex 2002 11
N-side isolation N-side isolation • Charge trapping in Oxyde layer
P-stops P-sprays
N.I.M. A 377 (1996) 412
0.2
0.2 3.0
3.0
November 3-8, 2002 D. Bortoletto - Vertex 2002 12
N-side isolation N-side isolation • Sintef 1999 submission focused
on double open p-stop ring (CMS Tracker-TDR baseline)
• We tested 8 p-stop options. Best designs have open p-stop rings (A, F and G)
• Opening between p-stops provides resistive network
F: Single open ring G: Double open ring 2A : Double open ring
November 3-8, 2002 D. Bortoletto - Vertex 2002 13
P-stop performance P-stop performance • Performance was measured before and after
irradiation
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 100 200 300 400 500Reverse Bias (V)
Lea
kag
e C
urr
en t
(A) Pixel Current
Guard Ring Current
Before irradiation After irradiation
• IV measurements at -10 C after irradiation show:
• Vbias< 300 V: Normal operation
• 300V< Vbias<550 linear increase of the leakage current from the pixel area (soft breakdown)
• Vbias>550V breakdown
0
5
10
15
20
25
30
0 200 400 600 800 1000
Breakdown Voltage Distribution - All Pixels
Range
1% 1% 1%
4%
6%
8%8%
13%
26%
31%
Design G
T=-10 0C
November 3-8, 2002 D. Bortoletto - Vertex 2002 14
P-stop performance P-stop performance
• TDR Sensor was connected to prototype chip at PSI.
• “Soft breakdown” current is draw by few pixels that become noisy at around 300 V
• Noisy pixels are uncorrelated to missing bond connections
November 3-8, 2002 D. Bortoletto - Vertex 2002 15
P-stop performance P-stop performance • Design with one open ring
(F):– Allows for smaller gaps– Shows improved
performance after irradiation
– No hard breakdown up to 800 V
– Lower slope of leakage current increase after “soft breakdown”
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 100 200 300 400 500 600 700 800
Bias Voltage (V)
Leak
age
Curr
ent (
A)
S24P4F S22P4F
S4P4Foxy S21P4F
S4P4Foxy
= 11014 neq/cm2
= 61014 neq/cm2
Design F
= 11014 neq/cm2 = 61014neq/cm2
A(TDR) at 300V ~5.0nA/pixel >10nA/pixel G at 300V ~1.9nA/pixel ~5.0nA/pixelF at 300V ~0.5nA/pixel ~4.0nA/pixel
T=-10 0C
November 3-8, 2002 D. Bortoletto - Vertex 2002 16
Sintef 2001 submissionSintef 2001 submission • Wafer Layout:
– 125x125 Finalize single pixel design (PSI-30 36 40 pixels Honeywell chip)
– 150x150 to match existing DMIL PSI-43 full size 52 53 pixels chip)
– 150x100 to match IBM 0.25m compatible layout
• 15 wafers Instrument 5 blades
• Bulk: (1,0,0) Resistivity=1-2 Kcm, thickness 275 m, several oxygenated wafers
November 3-8, 2002 D. Bortoletto - Vertex 2002 17
Single pixel design Single pixel design P-stopP-stop • Sintef 2001 (received in Summer
2002) submission focuses on single open p-stop. Small modifications: – improve yield (F design baseline).– Reduce inter-pixel regions to improve
charge collection efficiency (FM design).– Field plates to improve breakdown
FM
Field
Plate
Average Breakdown voltage increases by 200 V
November 3-8, 2002 D. Bortoletto - Vertex 2002 18
• July 2002: Irradiated 85 structures (single ROC silicon sensors + diodes) at IUCF with 200 MeV protons.– 15 pixels sensors and 10 diodes @ = 1x1014 p/cm2
– 24 pixels sensors + 8 diodes @ = 6x1014 p/cm2
– 20 pixel sensors + 8 diodes @ = 1x1015 p/cm2
• We measured the properties of the chips at room T and -10 0C– Half of the structures have been kept at -7.5 0C at
all time but for a few hours– Half of the structures were annealed for 4 minutes
at 80 0C following the procedure established by the Rose collaboration.
Irradiation at IUCF
November 3-8, 2002 D. Bortoletto - Vertex 2002 19
0.E+00
2.E-02
4.E-02
6.E-02
0 50 100 150 200 250 300
Reverse Bias [V]
1/C
^2 [p
F(̂-
2)]
10 KHz (W7D43)
Vdeplete = 20 V
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 200 400 600 800 1000
Reverse Bias (V)
Lea
kag
e C
urr
ent
(A) W16P2-P+ W16P2-GR
W16P5-P+ W16P5-GRW16P7-P+ W16P7-GRW7P1-P+ W7P1-GRW7P7-P+ W7P7-GRW7D43-P+ W7D43-GR
SENSOR Current
Guard Ring Current
Single pixel design Single pixel design P-stopP-stop • Measurements at T=-10 0C
Dose:11014np/cm2
• Depletion voltage:20V• Some pixel sensors show
increased guard ring current at around 600 V
November 3-8, 2002 D. Bortoletto - Vertex 2002 20
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 200 400 600 800 1000
Reverse Bias (V)
Lea
kag
e C
urr
ent
(A) W16P2-P+ W16P2-GR
W16P5-P+ W16P5-GRW16P7-P+ W16P7-GRW7P1-P+ W7P1-GRW7P7-P+ W7P7-GRW7D43-P+ W7D43-GR
SENSOR Current
Guard Ring Current
Single pixel design Single pixel design P-stopP-stop
Dose:11014np/cm2
• Several sensors showed “breakdown” before irradiation but not after irradiation.
• The guard current was higher than expected before irradiation
Before Irradiation
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 100 200 300 400 500 600 700 800 900 1000
Reverse Bias [V]
Lea
kag
e C
urr
ent
[A]
W16P2 -P+ W16P2 - GRW16P5 - P+ W16P5 - GRW16P7 - P+ W16P7 - GRW7P1 - P+ W7P1 - GRW7P7 - P+ W7P7 - GRW7D42 - P+ W7D43 - GR
November 3-8, 2002 D. Bortoletto - Vertex 2002 21
Single pixel design Single pixel design P-stopP-stop • Sintef 2001
Dose 6e14 at -10C
1.E-07
1.E-06
1.E-05
1.E-04
0 200 400 600 800 1000
Reverse Bias (V)
Leakag
e C
urr
en
t (A
)
W14P7-P+ W14P7-GRW4P1-P+ W4P1-GRW16P3-P+ W16P3-GR
W16P6-P+ W16P6-GRW14D45 - P+ W14D45 - GR
SENSOR Current
Guard Ring Current
CV for Dose 6e14 at -10C
0.E+00
1.E-02
2.E-02
3.E-02
4.E-02
5.E-02
0 100 200 300 400
Reverse Bias [V]
1/C
^2
[pF
^(-
2)] 10 KHz (W14D45)
Vdeplete = 220 V
Dose: 61014np/cm2
• Depletion voltage:220V• Some pixel sensors
show increased guard ring current at around 700 V
November 3-8, 2002 D. Bortoletto - Vertex 2002 22
CV for Dose 1e15 at -10C
0.E+00
1.E-02
2.E-02
0 100 200 300 400 500
Reverse Bias [V]
1/C
^2 [p
F^(
-2)]
100 Hz (W14D43)
Single pixel design Single pixel design P-stopP-stop • Sintef 2001 Dose: 11015np/cm2
Dose 1e15 at -10 C
1.E-07
1.E-06
1.E-05
1.E-04
0 200 400 600 800 1000
Reverse Bias (V)
Lea
kag
e C
ure
nt
(A)
W14P5-P+ W14P5-GR
W4P2-P+ W4P2-GR
W7P5-P+ W7P5-GR
W14D43-P+ W14D43-GRGuard Ring Current
SENSOR Current
• Depletion voltage >500V
• Some pixel sensors show increased guard ring current at around 700 V
November 3-8, 2002 D. Bortoletto - Vertex 2002 23
• Calculate single pixel current increase due to radiation using:
I = V =410-17 A/cm3 (Rose Collaboration)• We determine the expected current for = 1x1014 p/cm2,
=6x1014 p/cm2 and = 1x1015 p/cm2.
– Expectations at -10 0C for a single pixel I= 0.85 10-9,5.0910-9, 8.4910-9 A
– Measurements at -10 0C,
– @Vbias=300 V I: = 0.6210-9, 3.5910-9, 5.7510-9 A
– @Vbias=500 V I: = 0.6510-9, 3.8210-9, 6.10 10-9 A
– @Vbias=1000V I: = 0.7810-9, 5.0810-9, 7.39 10-9 A
Increase in leakage current
21
21
2
2
1
2leak
1leak
TT
T-T
2k
Eexp
T
T
)(TI
)(TI
November 3-8, 2002 D. Bortoletto - Vertex 2002 24
• Performance of p-spray and open p-stop appears to be similar:
Increase in leakage current
W14D43 - Dose 1e15 - -10C
0.E+00
1.E+00
2.E+00
3.E+00
4.E+00
5.E+00
6.E+00
7.E+00
0 200 400 600 800 1000Reverse Bias (V)
Leak
age
Cu
rre
nt
(uA
)
P+
Guard Ring
P-spray –18 0C P-stops –10 0C
November 3-8, 2002 D. Bortoletto - Vertex 2002 25
PSI sensors developmentPSI sensors development • PSI has made a submission with CIS, Erfurt,
Germany.• One wafer contains:
– one full size barrel sensor with 150 m 150 m pixels (one open p-stop ring)
– one full size barrel sensor with the "1/4 micron“ pitch of 100 m 150 m (p-spray design).
– 27 sensors with pitch 125 m 125 m to fit the old Honeywell PSI30 chip.
November 3-8, 2002 D. Bortoletto - Vertex 2002 26
PSI sensors developmentPSI sensors development • Technology options aim to
suppress soft breakdown
– moderated p-spray (similar to ATLAS design).
– "open p-stop" but with p-stop dose starting from 1014 cm-2 down to 31012cm-2.
• Several design options were tried:
– p-spray with different gap width 15, 20, 30 m
– Standard p-stop
– p-stop rotated by 900 between pixels.
– crosses.
November 3-8, 2002 D. Bortoletto - Vertex 2002 27
PSI sensors developmentPSI sensors development
• PSI has received 10 wafers from CIS + 10 “dummies” (full size sensors are damaged).
• Five wafers were measured. Good yield on the small sensors (only 2 of 68 were bad Vbreak<Vdep+50V).
• Irradiation and beam test planned
November 3-8, 2002 D. Bortoletto - Vertex 2002 28
ConclusionsConclusions• Probe station measurements indicates
that the new p-stop design is robust up to fluence of 11015 neq /cm2
• We are currently evaluating the PSI43 chip
• 4 sensors wafers have been tested and they will be sent to bump bonding companies in November
• Beam tests and/or source data will be used to understand noise, and charged collection efficiency of the current design.