Semiconductors
V
iJunction Diodes
10 mA
0.7 V- 100 V
approximateactual
V
iThe Zener Diode
well-defined“Zener”voltage
Voltage Regulator ICs
fixed-output LM78XX (positive)LM79XX (negative)
Voltage Regulator ICs
adjustable-output (1.2-25V)LM317 (positive)LM337 (negative)
semiconductor switches
Bipolar Junction Transistor (BJT)rules of thumb : current gain = ~10x, Vbe = ~0.7V
Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)requires higher gate-source voltage, but “no” gate current
Darlington (cascaded BJTs)rules of thumb : current gain = ~100x, Vbe= ~1.4V
Driver ICsintegrated darlingtons, etc. with logic-level inputs
!"#$% !"#$&'()&*(+!, -)!./- &*01,*2
SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description/ordering information (continued)
On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.
A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.
The L293and L293D are characterized for operation from 0°C to 70°C.
block diagram
1
0
3
4
5
6
7
89
10
11
12
13
14
15
161
21
0
1
10
2
4
3
M
M
M
1
0
1
0
10
VCC2
VCC1
NOTE: Output diodes are internal in L293D.
FUNCTION TABLE
(each driver)
INPUTS† OUTPUT
A EN
OUTPUT
Y
H H H
L H L
X L Z
H = high level, L = low level, X = irrelevant,
Z = high impedance (off)† In the thermal shutdown mode, the output is
in the high-impedance state, regardless of
the input levels.
collector-emitter breakdown = 100Vcurrent gain = 10-50x
TIP 31C (NPN Epitaxial Silicon Transistor):
current gain ~ 10x | Vbe > 0.6V | Vce,sat > 0.2V
(current controlled gate valve)
NPN Bipolar Junction Transistor (BJT)
collector
emitter
base
ULN2003A Darlington Array
The ULN2001A is obsoleteand is no longer supplied.
!"#$%%&'( !"#$%%$'( !"#$%%)'( !"#$%%*'( !"+$%%)'( !"+$%%*',-.,/01"2'.3 ,-.,/4!553#2
6'5"-#.21# 25'#7-7215 '55'8
SLRS027G ! DECEMBER 1976 ! REVISED JUNE 2004
11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
1
2
3
4
5
6
7
9
10
11
12
13
14
15
16
8
ULN2002A
P-MOS
Output
VSS V
Figure 16. P-MOS to Load
ULN2003A
ULQ2003A
Lamp
TestTTL
Output
VCC V
1
2
3
4
5
6
9
10
11
12
13
14
15
16
8
7
Figure 17. TTL to Load
VDD VULN2004A
ULQ2004A
1
2
3
4
5
6
9
10
11
12
13
14
15
16
8CMOS
Output
7
Figure 18. Buffer for Higher Current Loads
VCC V
RP
ULN2003A
ULQ2003A
1
2
3
4
5
6
9
10
11
12
13
14
15
16
8
TTL
Output
7
Figure 19. Use of Pullup Resistorsto Increase Drive Current
IN
common-emitter configuration500mA single output maximum
internal snubber diodes
The ULN2001A is obsoleteand is no longer supplied.
!"#$%%&'( !"#$%%$'( !"#$%%)'( !"#$%%*'( !"+$%%)'( !"+$%%*',-.,/01"2'.3 ,-.,/4!553#2
6'5"-#.21# 25'#7-7215 '55'8
SLRS027G ! DECEMBER 1976 ! REVISED JUNE 2004
3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematics (each Darlington pair)
Input
B
Output
C
COM
E
ULN2001A
7.2 kΩ 3 kΩ
Output
C
COM
E
ULN2002A
7.2 kΩ
3 kΩ
10.5 kΩ
7 V
Input
B
Output
C
COM
E
ULN2003A, ULN2004A, ULQ2003A, ULQ2004A
7.2 kΩ 3 kΩ
RBInput
B
ULN/ULQ2003A: RB = 2.7 kΩULN/ULQ2004A: RB = 10.5 kΩ
All resistor values shown are nominal.
current gain ~ 100x | Vbe > 1.2V | Vce,sat > 0.8V
(cascaded current controlled gate valves)
Darlington
IRLZ34N (N-channel Power MOSFET)
gate threshold voltage = 1-2Von resistance = 0.035Ωmax drain current = 30A
drain-source breakdown = 55V
Vgs,on > 1V | Rds > 0
(voltage controlled gate valve)
N-channel MOSFETs
source
drain
gate
V +
MOTOR
V +
MOTOR
V +
MOTOR
The H-bridge
L293d (Quad Half-H Driver)
!"#$% !"#$&'()&*(+!, -)!./- &*01,*2
SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description/ordering information (continued)
On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.
A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.
The L293and L293D are characterized for operation from 0°C to 70°C.
block diagram
1
0
3
4
5
6
7
89
10
11
12
13
14
15
161
21
0
1
10
2
4
3
M
M
M
1
0
1
0
10
VCC2
VCC1
NOTE: Output diodes are internal in L293D.
FUNCTION TABLE
(each driver)
INPUTS† OUTPUT
A EN
OUTPUT
Y
H H H
L H L
X L Z
H = high level, L = low level, X = irrelevant,
Z = high impedance (off)† In the thermal shutdown mode, the output is
in the high-impedance state, regardless of
the input levels.
VCC1 (logic supply) = 4.5V - 7.0VVCC2 (motor supply) = VCC1 - 36V
input high = 2.3V - VCC1input low < 1.5V
600mA (1.2A peak) per channelinternal protection diodes
Driver ICs
!"#$% !"#$&'()&*(+!, -)!./- &*01,*2
SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description/ordering information (continued)
On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.
A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.
The L293and L293D are characterized for operation from 0°C to 70°C.
block diagram
1
0
3
4
5
6
7
89
10
11
12
13
14
15
161
21
0
1
10
2
4
3
M
M
M
1
0
1
0
10
VCC2
VCC1
NOTE: Output diodes are internal in L293D.
FUNCTION TABLE
(each driver)
INPUTS† OUTPUT
A EN
OUTPUT
Y
H H H
L H L
X L Z
H = high level, L = low level, X = irrelevant,
Z = high impedance (off)† In the thermal shutdown mode, the output is
in the high-impedance state, regardless of
the input levels.