Russian-French collaboration in the development of layered nanostructures
for THz technology
G.N. Izmaïlov, O.A. Klimenko, Yu. A. Mityagin, V.N. Murzin
Outline of Presentation
2
The results of joint work with the Charles Coulomb Laboratory of University of Montpellier 2, France were the topic of my report "Russian-French cooperation inthe development of layered nanostructures for THz technology ".
First of all, I need to explain the feasibility of works,then talk about the physics of some phenomena that served as the subject of research;mention those involved in the development;present the results of research;make conclusions
Terahertz range
3
Where is THz radiation applicable •THz radiation finds applications in astronomy in the analysis of the chemical composition of stars and planets, in biology and medicine, in security, where it is necessary to determine the chemical composition of the material at a distance, without destroying it.•A very popular application is the control of product quality. The fact is that the presence of microcracks and microcavity distorts the interference pattern, even if they are concealed in the depth of material.•Also is required the development of telecommunications in the next five to seven years to move to the transfer of information to Terahertz frequencies•In general, such a large set of different applications provokes the development of devices that are adapted precisely at Terahertz frequency range.
Terahertz range
4
THz astronomy
Terahertz radiation from the Sun
Terahertz range
5
MethamphetamineMDMA Aspirin
Production quality control
Detection of Hazardous SubstancesTelecommunication
= 0.3 – 10 THz = 10 – 333 sm-1 = 30 µm – 1 mm
Art history & restoration
Двумерная электронная плазма
3D плазма:
2D плазма:
6
*3
2
3,
4
m
ne DDp
km
kne Dp
*
222
ε2
ε1
k
1p
2D plasma:
7
km
kne Dp
*
222
21*
22
1
4
m
kne Dp
2-D electronic plasma
3D plasma:
*3
2
3,
4
m
ne DDp
ε2
ε1
ε2
ε1
d
k
1p
2p
k
2D plasma:
8
km
kne Dp
*
222
21*
22
1
4
m
kne Dp
km
dne Dp
2*
22
2
2
2-D electronic plasma
3D plasma:
*3
2
3,
4
m
ne DDp
km
kne Dp
*
222
21*
22
1
4
m
kne Dp
km
dne Dp
2*
22
2
2
kpcmp22
ε2
ε1
ε2
ε1
d
k
1p
2p
k
2D plasma:
2D in a magnetic field:
*meBc 9
2-D electronic plasma
3D plasma:
*3
2
3,
4
m
ne DDp
2D electron plasma in the channel of FET
transistor
10
Channel
Vg
Drain
Gate
Source
D
D
D
S
S
S
Typical dimensions of the transistor:
Distance drain-source ~ 1 micron
Gate length = 0.1 m
Beam shutter 10 - 100 microns
Pad size ~ 100 microns
The emission wavelength 100 - 1000 m
2D electron plasma in the channel of FET
transistor
11
tntEEµnej ACACACACAC cos ,cos ,
Канал
Vg
Drain
Gate
Source
ACjU tjAC 2cos
D
D
D
S
S
S
Typical dimensions of the transistor:
Distance drain-source ~ 1 micron
Gate length = 0.1 m
Beam shutter 10 - 100 microns
Pad size ~ 100 microns
The emission wavelength 100 - 1000 m
Dyakonov-Shur model
12M. Dyakonov and M. Shur, IEEE Trans. El. Dev. 43, 380 (1996)
, , thChGe UxUUe
xCUn
,x
U
m
e
x
vv
t
v
0
x
vn
t
n ee
)(4
1)0()(
0
2
fU
UxULxUU a
0,
,cos,0 0
tLj
tUUtU a
Boundary conditions:
M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993)
(assymetry!!)
Dyakonov-Shur model
13
Resonant detection
Nonresonant detection
,1
,1
14
14)(
220
2
nL
sf
221
21)(
f
ТГц 11.0~20
L
s 7,... 5, 3, ,1n
Ls
sL
21
sL
,1Conditions :
or
Conditions :
С
С
С
И
И
И
)(4
1
0
2
fU
UU a
M. Dyakonov and M. Shur, IEEE Trans. El. Dev. 43, 380 (1996)M. Dyakonov and M. Shur, Phys. Rev. Lett. 71, 2465 (1993)
The detection of THz radiation by FET
14W. Knap et al. JAP, 91, 9346 (2002)
History of innovation
15
In 2002y. W Knap (Montpellier, France) for the first time saw the Terahertz FET photoresponse - it is what was predicted in 1993 by Dyakonov and Shur (St. Petersburg, Russia)In the 2006y-9y papers, the resonance detection regime has been studied in more details. It was seen that the resonance peak becomes more pronounced with decreasing temperature, i.e. a decrease of the lenght of plasma waves. The peak position varies with the radiation frequency, as was predicted by Dyakonov-Shur theory. However, the experimentally obtained peak figure of merit is much lower than the calculated value.Key results were obtained in 2009y.The influence of a magnetic field on a photoresponse has been studied in 2009- 2011yy.
Terahertz reseaches
16
Theory
М. И. ДЬЯКОНОВ
М. Б. ЛИФШИЦ
Experiment
W. КNAP D. КОКIIYA
F. ТЕPP Н.В. ДЬЯКОНОВА
Terahertz radiation Emission andDetection Laboratory(Montpellier)
Facilities
• Fourier spectrometer Brucker FX66S. frequency range 0,3-200 THz (10-6000 cm-1).• Cryostat with a superconducting magnet. The magnetic field up to 16 T, the temperature of the sample to 2-300 K.• Backward wave oscillator. • Molecular CH3OH laser pumped by CO2. The frequency of radiation 2.5 THz.• Si bolometer. Sensitivity 2x10-13 W/Hz0.5. Compatible with the Fourier spectrometer.• The quantum cascade laser. The frequency of radiation 3.76 THz .• Gunn diode. The frequency of radiation 0.3 THz
17
The investigated transistors
18
Material Type Mobility at 300 K, cm2 / V · s
Mass of an electron in a channel
Channel length, μm
Gate length, μm
GaN/AlGaN HEMT 1500 0,2 me 3,9 0,25
GaAs/AlGaAs HEMT 8500 0,067 me 5 0,15
Si MOSFETCMOS
100 0,19 me 0,13 0,13
Si SOI 660 0,19 me 10 10
InAlAs/InGaAs HEMT 11500 0.049 me 2,6 0,8
18
Grant of the President of the Russian Federation № 14.122.13-4848 МК for the support of young Russian scientists and leading scientific schools : «Study of the interaction of electromagnetic Terahertz radiation with two-dimensional electron gas in GaAs / GaAlAs and InAlAs / InGaAs HEMT structures with a view to develop a new type of fast matrix detectors».
19
1. O.A. Klimenko et al., Terahertz Response of InGaAs Field Effect Transistors in Quantizing Magnetic Fields // Appl. Phys. Lett., 2010, V. 97, P. 0022111
2. W. Knap et al., Plasma excitations in field effect transistors for terahertz detection and emission // C.R.Physique, 2010, V. 11, Issues 7-8, P. 433-443
3. M. Sakowicz et al., Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects // J. Appl. Phys., 2011, V.110, P.054512
4. C. Drexler et al., Helicity sensitive terahertz radiation detection by field effect transistors // J. Appl. Phys., 2012, V.114, P.124504
5. O. A. Klimenko et al., Temperature enhancement of terahertz responsivity of plasma field effect transistors // J. Appl. Phys., 2012, V.112, P.014506
Publication on the work
The results ofthe collaboration
20
The relations between characteristics of the channel field-effect transistor with photo response are established, which are important for a more complete understanding of the processes in the channel, where the generation of THz radiation is occurred, and for the further development of the theory. Experimental confirmations of the theoretical conclusions were performed at various temperatures from room temperature to liquid helium. The theoretical description of the generation processes now includes the presence of a magnetic field cases.Experimental studies of the photo response of FETs in a magnetic field, as directed by a more detailed study of the phenomenon, confirmed a new theoretical model. The detecting elements is obtained that can be used as a basis for the development of next-generation units of compact and changing the generating wavelength.Prototypes of devices (laboratory samples) to work in the THz range are created.As a result of research collaboration we note the strengthened scientific communications between different groups and different schools of the EU and Russia
Thanks
for your attention
Thanks
План доклада
I. Высокочастотные свойства 2D электронной плазмы
II. Детектирование ТГц излучения 2D электронной плазмой в канале полевого транзистора
III. Связь нерезонансного фотоотклика и проводимости канала полевого транзистора
IV. Влияние магнитного поля на эффект детектирования ТГц излучения 2D электронной плазмой в канале полевого транзистора
V. Выводы Работа проводилась совместно с Лабораторией им. Шарля Кулона университета Монпелье 2, Франция. 22
В существующих транзисторах:n2D ~1012 см-2, d ~10 нм, vdr ~107 см/с, s ~108 см/с, fp ~1 ТГц
23
*2
24
m
dnes D
skP
kP ~•Холловские структуры•Область канала полевого транзистора вне затвора
•Область канала полевого транзистора под затвором
gD Vfn 2
Двумерная электронная плазма
The detection of THz radiation by FET
24
Ширина линии = 1/ ~ 3
µ = 36 000 см2/В·с ~ 13
A. El Fatimy et al. APL, 89, 131926 (2006)
Ширина резонанса больше, чем в теории*0,
)(
22 m
VVe
LL
s thgP
The detection of THz radiation by FET
25
Теория Дьяконова-Шура
Экспериментальная геометрия
S D
Только продольные моды
Все моды возможны
L
w
L
WS D
y
x
• W/L ~ 100• шероховатости на границах
L = 400 нм
Wgr = 300 нм
W = 200 нм
-0,4 -0,3 -0,2
15 30 45 60
2
4
6
84
3
2
1
Qu
alit
y F
acto
r
Temperature (K)
A B
D
C
60 K 35 K 25 K15 K
10 K
Ph
oto
resp
on
se (
arb
. Un
its)
Gate voltage (V)
A. Shchepetov et al. APL, 92, 242105, (2008)S. Boubanga-Tombet et al. APL, 92, 212101, (2008)
f = 0.54 TГц
InGaAs/InAlAs HEMT
Многоканальные транзисторы
Results. GaN HEMT
-5.6 -5.4 -5.2 -5.0 -4.8 -4.60
10
20
30
40
50
60
(4)
(3)
(2)
Pho
tore
spon
se (m
V)
Vg (V)
(1) T = 275K, A = 1.2910-4 V²
(2) T = 175K, A = 1.8310-4 V²
(3) T = 75K, A = 3.9610-4 V²
(4) T = 5K, A = 8.5510-4 V²
(1)
GaN
26
экспериментрасчет
The detection of THz radiation by FET
Detection in a magnetic field. Lifshitz-Dyakonov model
27
,vvBm
eU
m
evv
t
v
0
vUdivt
U
Boundary conditions:0 ,0 UUv
tUUtU a cos,0 0
x
x
при
0 при
zB
M. B. Lifshits and M. I. Dyakonov, Phys. Rev. B 80, 121304(R) (2009)
1
Lorentz force
Conductivity oscillation
xx