Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences
Design of monolithic microwave integrated circuits in Institute of Ultra High frequency Semiconductor Electronics of Russian
Academy of Sciences
Gnatyuk Dmitry, PhD, laboratory supervisor
Institute of Ultra High frequency Semiconductor Electronics of Russian Academy of Sciences
Founded in 2002
2002 – 3 employees2013 – 6 employeesincluding 1 student and 1 PhD student
Laboratory for research and development of design methods of nanoheterostructural ultra high frequency transistors and
microwave monolithic circuits and for microwave measurements.
Design engineer
CAD verified modelsDesign Rules
Completed project
FOUNDRY
- technology- production
END PRODUCT
CONVENTIONAL DESIGN FLOW
Evaluation of standard Microwave Office model
Spiral Inductor 0,4 nH
blue – measurementpurple – standard modelgreen – EM calculationred – EM calculation improved
S11 S21
Bended microstrip line
blue – measurementpurple – standard modelgreen – EM calculationred – EM calculation improved
Evaluation of standard Microwave Office model
S11 S21
Evaluation of standard Microwave Office model
Capacitor 0,2 pF
blue – measurementpurple – standard modelgreen – EM calculationred – EM calculation improved
S11 S21
0 1 2 3 4 5
Voltage (V)
VAH
0
10
20
30
40
50
60
70
80
90
100
p11p10
p9
p8
p7
p6
p5
p4
p3p2
p1
IVCurve() (mA)Schematic 1
p1: Vstep = 0 V
p2: Vstep = -0.2 V
p3: Vstep = -0.4 V
p4: Vstep = -0.6 V
p5: Vstep = -0.8 V
p6: Vstep = -1 V
p7: Vstep = -1.2 V
p8: Vstep = -1.4 V
p9: Vstep = -1.6 V
p10: Vstep = -1.8 V
p11: Vstep = -2 V
Equivalent circuit based model
Measured IV
Calculated IV
N
F,
dB
Frequency, GHz
Measured
Calculated
Development of Transistor models
I dr
ain,
mA
U gate-drain, V
0 1 2 3 4 50
20
40
60
80
100
Ток
сто
ка, м
А.
Напряжение сток-исток, В.
0-0.2-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8-2
I dr
ain,
mA
U gate-drain, V
Calculated results
Schematic and layout of GaAs pHEMT Ka-band LNA
Design of Ka-band LNA (version 1)
N
F,
dB
Frequency, GHzFrequency, GHz
VS
WR
F = 30 – 37,5 GHzGain > 18 dBNF < 5 dBVSWR in < 2VSWR out <2
VS
WR
in
VS
WR
out
S21
, dB
Sta
bilit
y
Measured results of Ka-band LNA (version 1)
Corrected layout of Ka-band LNA (version 1)
type 1 type 2
type 3 type 4
Measured results of corrected Ka-band LNA (version 1)
type 1 type 2
type 3 type 4
NF
, d
B
Frequency, GHz
Measured Gain and NF of LNA (types 1 - 3) Measured Gain and NF of LNA (type 4)
Comparison of NF of different types of LNA
Gain = 18 -22 dBNF = 2,5 - 3,3 dB VSWR in < 2VSWR out < 2 Ud=2V, Id=60mА
Measured Noise figure of corrected Ka-band LNA
G
ain
, N
F,
dB
Frequency, GHz
Gai
n,
NF
, d
B
Frequency, GHz
a) Measured and calculated data of LNA type 1
b) Measured and calculated data of LNA type 4
Calculated
Calculated
Calculated
Calculated
Measured
Measured
Measured
Measured
Frequency, GHz Frequency, GHz Frequency, GHzFrequency, GHz
V
SW
R in
V
SW
R o
ut
N
F,
dB
Calculated
Calculated
Calculated
Calculated
Measured Measured Measured Measured
Frequency, GHz Frequency, GHz Frequency, GHz Frequency, GHz
V
SW
R in
V
SW
R o
ut
N
F,
dB
Accuracy of calculations
• Inaccurate values of physical magnitude of characteristics of materials at high frequency (permittivity and loss tangent of dielectric, conductivity of metal etc);
• Error due to 2.5-D simulator calculation method;
• Design peculiarities that were not taken into account during calculations;
• Error due to port calibration procedure used in CAD software;
• Combined effect of stated above reasons.
Possible reasons of calculation error
Picture of perfected LNA
Schematic of perfected LNA
Design of Ka-band LNA (version 2)
Gain = 19-22 dB NF = 3,0 - 3,7 dB VSWR in < 2VSWR out < 2
Measured results of perfected Ka-band LNA (version 2)
Ud=2,2 VUg=0,4 VId=46 mА
NF
Gain
Gai
n a
nd
NF
, d
B
Frequency, GHz
V
SW
R in
V
SW
R o
ut
S
tabi
lity
Frequency, GHz Frequency, GHz
Frequency, GHz Frequency, GHz
V
SW
R in
V
SW
R o
ut
S
tabi
lity
Frequency, GHz
Frequency, GHz Frequency, GHz
Frequency, GHz
Validity of design method
Measured and simulated data for Ka-band LNA (version 2)
• Suggested design method is proved to be effective for 1st iteration result.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
25 30 35 40
Частота, ГГц
Ко
эф
фи
ци
ен
т ш
ум
а,
дБ
Расчет
Измерение
Calculated
Measured
Frequency, GHz
N
F, d
B
V
SW
R i
n
V
SW
R o
ut
Sta
bil
ity
Frequency, GHz Frequency, GHz
Frequency, GHz Frequency, GHz
Measured
Measured
Measured
Measured
Calculated
Calculated
Calculated
Calculated
20 25 30 35 40 4515 50
5
10
15
20
0
25
freq, GHz
dB(S
(2,1
))
Design flow diagram
Name Band, GHz Gain, dB NF, dBS11, dB
S22, dB
Power supply
Chip size, mm2
IUHFSE RAS(Version 1)
37 - 44 18-20 2,5 - 3,3 -10 – -23 -10 – -242V,
60mА1,25 х 1,1
IUHFSE RAS (Version 1)
31 - 44 14-20 2,5 - 5 -5 – -23 -5 – -242V,
60mА1,25 х 1,1
IUHFSE RAS (Version 2)
28 – 36 18,5 – 22 3,0 – 3,7 -10 – -15 -14 – -22Ug=0,4VUd=2V,60mА
1,15 х 1,0
IUHFSE RAS (Version 2)
25 – 40 17 – 22 2,8 – 4,0 -6 – -14 -5 – -22Ug=0,4VUd=2V,60mА
1,15 х 1,0
Mimix
XL1000-BD20 – 40 17 – 21 2 – 4 -5 – -20 -5 – -17 3V, 35 mА 2,0х1,0
Avago TechnologiesAMMC-6241
26 – 43 17 – 22 2,6 – 3,3 -10 – -14 -17 – - 253V,
60 mА1,9 х 0,8
Triquint TGA4507-EPU
28 – 36 20 – 25 2,1 – 2,3 -6 – -10 -6 – -233V,
60 mА1,86 х 0,85
Triquint TGA4508-EPU
30 – 42 20 – 21 2,7 – 3,2 -6 – -12 -15 – -273V,
40 mА1,7 х 0,8
Hittite HMC-ALH369
24 – 40 18 – 27 1,4 – 2,2 -10 – -20 -13 – -305V,
66 mА2,1 x 1,37
Hittite HMC-566
29 – 36 19– 23 2,5 – 3 -13 – -24 -8 – -103V,
80 mА2,54 x 0,98
UMS CHA2394 36 – 40 19 – 21 2 – 2,5 -8 – -10 -12 – -253,5V, 60 mА
1,72x1,08
Comparison of designed LNA with world’s analogues
Avago Technologies AMMC-6241
NF
Gain
G
ain
an
d N
F,
dB
Frequency, GHz
Comparison of designed LNA with world’s analogues
Mimix XL1000-BD IUHFSE RAS (version 2)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
25 30 35 40
Частота, ГГц
Коэф
фиц
иент
шум
а, д
Б
Расчет
Измерение
Calculated
Measured
Frequency, GHz
N
F, d
B
Intel Core2Duo, 2 threads, 3.4 GHz, 4 Gb RAM - ~ 20 - 25 minutes
AMD Phenom II X6 1090T, 6 threads, 3.2 GHz, 4Gb RAM – 120 sec (ADS 2008)
Intel Xeon X5690, 24 threads, 3.47 Ghz, 48 RAM (2 CPU) – 72 sec (ADS 2011)
AMD FX9 8150, 8-threads, 3.6 GHz, 12 Gb RAM – 57 sec
AMD Phenom II X6 110T, 6-threads, 3.3 Ghz, 8 Gb RAM – 53 sec
Intel Xeon E5-2687W, 32-threads, 3.1GHz, 32 Gb RAM (2 CPU) – 33 sec
Intel Core i7-3770K, 8-threads, 3.5 GHz, 8 Gb RAM – 25 sec
Evolution of calculation time
Conclusion
1. Custom Design flow based on EM calculations of entire layout is developed.
2. Custom model builder tool is created.
3. Effectiveness of developed design approach is proved experimentally.
4. First in Russia LNA MMICs with competitive specifications are successfully designed and manufactured in IUHFSE RAS.
Thank you for your attention