Gencoa3G Circular Magnetrons
Presenting Gencoa’s 3rd
generation range of circular magnetrons
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• Product Overview
• Introduction
• 3G Design Features
• 3G Mechanical Options
• High Yield Magnetics from 4” target
• High Strength Magnetics
• Low pressure operation
• Deposition Rate
• Performance curves
• Conclusion
Copper target, DC 300W, 8.5 E-3 Torr
Copper target, RF 300W, 8.5 E-3 Torr
Contents
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3G
Product Overview Product Overview
Gencoa 3G Circular Magnetrons – 3rd
generation of circular magnetron design
Gencoa’s small sized circular magnetrons for R&D have evolved in 3 stages to the current third generation with
more performance in a smaller space
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1996 2010 2017
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• Launched in 2017
• Works in wide range of pressure – into 10-6 Torr range
• Compact Size
• Unique non-bellow tilted magnetron head
• High Yield magnetics for the 4” target size
• Magnetic material sputtering
• Gas Injection as standard
• PEEK insulation to reduce outgassing
• Accommodates different target thickness
• DC, DC pulse, RF and HIPIMS ready
Copper target, RF 300W, 8.5 E-3 Torr
3G cathode features
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Available in 5 different assembly options
• SW (3G)- Full option with 45⁰ tilt, RF /HIPIMS ready and gas injection
• SW (3GA)- The cathodes can be supplied with a simple straight & no gas injection.
• SW (3GB)- The basic design with only gas injection as option
• SW (3GC)- This model comes with tilt and gas injection but no power connection box.
• SW (3GE)- Externally mounted magnetron with gas injection and RF/HIPIMS ready
SW
100
(3G
)
SW100(3GE)
3G cathode variations
SW
50
(3G
C)
SW
50
(3G
B)
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• Small head size – approx. 1” larger than target size
• Tilt height most compact in industry - tilt pivot point is 1” from cathode rear allowing higher tilt angles
• 3G means smaller chambers can be used whilst having the same tilt and head positions
C
A
B24.4
Target A B C
2” 92.3 83.8 76.2
3” 97.7 85.7 101.6
4” 114 101.5 128.1
3G small head size and tilt means smaller chambers
3G has innovative head angle adjustment
• ±45° tilt without bellows
• Angle can be viewed and adjusted from the front of the cathode
• The 2 position clamp pressure is released by means of a supplied tool or by hand, the head is rotated to the desired angle, then the clamp is re-fixed to the first ‘notch’ tight position
• To measure the angle, there is a milled slot on the clamp that is aligned with the protractor angle allowing the tilt angle to be fixed accurately to 5°.
• The protractor is removable.
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Knurled Single Ring allows easy tilting
Protractor Tilt tightening Tool
Self Adjusting Target Clamps
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• Target clamp adjust to the target thickness. anti-sticking materials used for the threaded fixing
• Can use a thermal conduction gasket between target and cooled diaphragm
• High water flow (2l/min) and diaphragm cooling for high power capacity
• Directly cooled targets available – factory configured
Threaded Target Clamp
PEEK Insulator (reduces Outgassing)
4” HY target with graphite gasket and diaphragm
Eroded Target
Thermal Conduction Sheet (Graphite)
Diaphragm
Target Removal Tool
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Various mechanical options available
• Design allows to fit manual and pneumatic shutter
• Anode cooling to provide extra source cooling for HOT chamber environments
• Gas injection
• Sputter Chimney
• Quick coupling feedthrough
• ISO or CF flange mounting option
Shutter (Optional)
Power Connector (N type /7-16”/HN)
Anode Cooling(Optional) Wall Mount
Feedthrough (Optional)
Shutter Adjustment Manual/Pneumatic (Shown)(Optional)
Gas Injection
3G Extra Options
New shutter design with longer flexible shaft
3G Mechanical Option Matrix
Model Gas Injection
Tilt RF/ HIPIMS
Shutter Chimney Wall Mount Feedthrough
Water Cooled Anode
Hidden Anode
3G • • • • • • • •3G(A) • • • • • • • •3G(B) • • • • • • • •3G(C) • • • • • • • •3G(E) • • • • • • • •
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• Standard Feature
• Optional
• Not Applicable
Mechanical Options Examples
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4” 3G with Shutter) 3G100 ExternalAnode Cooling
3G 45⁰ Tilted
3G No shaft (customer weld )
Sputter Chimney
3G100 High Yield type magnetics for high target use
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• The 3G100 is available with a high yield HY type array
• >40% target utilization
• Gencoa solution for precious material sputtering
Ta
rget
pro
file
,m
m
-60 -40 -20 0 20 40 60
3G100-HY 10mm thick target erosion
Radial Position, mm
9
6
3 Ta
rget
pro
file
,m
m
Magnetic Material Sputtering (High Strength Array)
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• The cathodes allow magnetic material sputtering as standard with diaphragm cooled target.
• Thicker target can be sputtered using directly cooled target. (Pre- configured at factory)
• Anode height adjustable to accommodate different target thickness.
Size
Magnetic Strength on the target
surface (G)
Fe Thickness
(mm)
Ni Thickness
(mm)
50mm (2”)
780 1 3
75mm (3”)
840 1.5 4
100mm (4”)
620 0.5 2
Anode height line
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• Extensive testing performed on 3G prototypes for product reliability and plasma stability
• Achieved 2l/min water flow through the cathode at 1.5 bar pressure difference
• Works in wide range of pressure
• Coating uniformity & deposition rate measured for different target diameters
• Performance curves obtained at various pressure levels for various power modes
Copper target, DC 300W, 8.5 E-3 Torr
Copper target, RF 300W, 8.5 E-3 Torr
3G cathode testing
80
120
160
200
240
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
v
olt
ag
e, V
Pressure, Torr
3G50-Cu Target
RF 300W
RF 180W
300
350
400
450
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
3G50-Cu target
DC 300W
DC 180W
10-6 to 10-2 Operating Pressure Range – example of 3G50 (2”)
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300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
v
olt
ag
e, V
Pressure, Torr
3G75 -Al target
DC 600W
DC 300W
300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
3G75-Cu target
DC 600W
DC 300W
10-6 to 10-2 Operating Pressure Range – example of 3G75 (3”)
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300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
3G100 - Cu target
DC 600W
DC 300W
300
350
400
450
500
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
3G100 HS - Cu target
DC 600W
DC 300W
10-6 to 10-2 Operating Pressure Range – example of 3G100 (4”)
300
350
400
450
500
550
600
650
1.00E-05 1.00E-04 1.00E-03 1.00E-02
Ta
rget
vo
lta
ge,
V
Pressure, Torr
SW100HY-Cu Target
DC 600W
DC 300W
3G100HY operating parameter example
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0
1
2
3
4
5
200
300
400
500
600
700
0 400 800 1200 1600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 Torr, DC powerAl target
Voltage
Current
Coating Uniformity 3G50
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0.2
0.3
0.4
0.5
-50 -40 -30 -20 -10 0 10 20 30 40 50
OD
Position, mm
DC Power 150mm T/S, Copper target
Range (mm) Uniformity
50 2.0%
30 0.9%
20 0.4%
Coating Uniformity 3G50
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0
0.2
0.4
0.6
0.8
1
1.2
-50 -40 -30 -20 -10 0 10 20 30 40 50
OD
Position (mm)
Normalised Uniformity over 100mm
50mm T/S
150mm T/S
100mm T/S
Coating uniformity 3G75DC & RF comparison
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Range, mmDC
Uniformity
50 ±4.4%
60 ±6.5%
70 ±8.4%
Range, mmRF
Uniformity
50 ±3.5%
60 ±5.7%
70 ±7.9%
Al target, DC 300W, 2.5 E-3 Torr
Al target, RF 300W, 2.5 E-3 Torr
0
0.2
0.4
0.6
0.8
1
1.2
-30 -20 -10 0 10 20 30
3" Al target @100mm T-S
RF
DC
Coating Uniformity 3G100DC & RF Comparison
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Range, mmDC
Uniformity
50 ±5.1%
60 ±7.2%
70 ±9.1%
Range, mmRF
Uniformity
50 ±5.2%
60 ±6.9%
70 ±9.1%
Cu target, DC 300W, 1.4 e-2Torr
Cu target, RF 300W, 1.4 e-2Torr
0
0.2
0.4
0.6
0.8
1
1.2
-40 -30 -20 -10 0 10 20 30 40
4" Cu Target @150mm T-S
DC
RF
Power Vs Voltage Vs Current (3G50 Cu target, DC power)
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0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5E-4 Torr
0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 Torr
0
0.2
0.4
0.6
0.8
1
250
300
350
400
450
0 60 120 180 240 300
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
Voltage
Current
Voltage
Current
Power Vs Voltage (3G50 RF Power)
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50
90
130
170
50 100 150 200 250 300
DC
vo
lta
ge
, V
Forward power, W
Cu target
5.0E-4 Torr
2.5E-3 Torr
1.4E-2 Torr
250
300
350
400
450
500
550
600
50 100 150 200
DC
vo
lta
ge,
V
Forward power, W
RF power, 2.5E-3 Torr, fused silica target
Power Vs Voltage Vs Current (3G75 Al target, DC power)
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0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 T orr,
0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 T orr,
Voltage
Current
Voltage
Current
0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rren
t, A
Vo
lta
ge,
V
Power, W
8.5E-3 Torr
Voltage
Current0
0.4
0.8
1.2
1.6
2
220
270
320
370
420
470
0 120 240 360 480 600
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
Power Vs Voltage (3G75, RF power)
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120
160
200
240
280
50 100 150 200 250 300
DC
vo
lta
ge,
V
Forward power, W
RF power, Al target
5.0E-4 Torr
2.5E-3 Torr
8.5E-3 Torr
1.4E-2 Torr
Power Vs Voltage Vs Current (3G100 Cu target, DC power)
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0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
1.4E-2 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
8.5E-3 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
2.5E-3 Torr
Voltage
Current
0
0.5
1
1.5
2
2.5
3
250
300
350
400
450
500
550
0 200 400 600 800 1000 1200
Cu
rr
en
t, A
Vo
lta
ge
, V
Power, W
5.0E-4 Torr
Voltage
Current
Power Vs Voltage (3G100, RF power)
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0
50
100
150
200
250
50 100 150 200 250 300
DC
vo
lta
ge,
V
Forward power, W
RF power, Cu target
5.0E-4 Torr 2.5E-3 Torr
8.5E-3 Torr 1.4E-2 Torr
Gencoa 3G – No.1 choice for R&D Thin Film Technology
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Gencoa 3G Advantages Competition
Lower Pressure Operation. 3G magnetrons can work down to e-6 Torr range
Most small size magnetrons work e-4 Torr range only
Small head size allows for smaller chambers or more sources within the same space
Larger heads require larger chambers
Magnetron head can be tilted 45 ⁰ with ease. No welded bellows and compact tilt height allows sources closer together in a cluster. The angle can be fixed accurately to 1 °.
Magnetrons are tilted using welded bellows which requires more chamber space and less accurate.
High Yield magnetics for 4” offering >40 % target use and recommended for precious metal sputtering
Not Available
Gas injection standard for all magnetrons Extra cost
DC, RF & HIPIMS compatible as standard Ordered as an option
Gencoa developed uniformity software to generate a coating uniformity direct from the magnetic field model and taking into account all system parameters
Not available
3G Cu Example Deposition Rates (100mm T-S)
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TargetSize
Target Thickness (mm)
Power Mode
Power (W)
Deposition Rate (nm/min)
2” 3 DC 300 134
2” 3 RF 300 94.5
3” 6 DC 300 133
3” 6 RF 300 80
4” 6 DC 300 116
4” 6 RF 300 70
Gencoa cluster solution to R&D Market
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IMC75• A powerful new tool for
thin film research.• Fits into the space of a
typical magnetron and has head tilt adjustment.
• Multiple uses - ion assistance, patterning, pre-cleaning, coating stripping, PECVD
• DC power technology for low cost of ownership.
• Dedicated Power supply with Gas regulation via automatic feedback control
FFE75• Dynamic plasma
movement for full face erosion
• Clean target for defect free layers
• High target use for precious metals
• Better Uniformity• Ideal for high cost
and compound targets.
• RF, HIPIMS and DC Option
• Tilt, shutter, Gas injection available
3G75• State of the
art design • Wide rang of
operating pressure
• Compact in size
• Various mechanical options possible.
• RF, HIPIMS and DC Option
Further information gencoa.com/3g-circular
You might also be interested in our small circular ffemagnetron range and IMC75 circular ion source
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IMC75 R&D Power in one source – substrate pre-cleaning, etch and patterning, ion assistance, oxidation, Plasma ALD, Plasma CVD, ion beam sputtering, cluster encapsulation
ffe75
ffe75
ffe75
ffe100
Further information
For further information on the Gencoa range of 3G circular magnetrons, visit www.gencoa.com/3g-circular or email [email protected] to contact member of the sales team.
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