Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer Engineering
College of Engineering
Dushan Boroyevich
Presentation at the Second Annual Conference of UK Engineering and Physical Sciences Research Council
Centre for Power ElectronicsUniversity of Nottingham, UK
From Power Electronics Devices to Electronic Power Systems
– A CPES Perspective –
29th – 30th June 2015
What is the Future of Power Electronics?Power
ElectronicsElectricPower
Between 1920 - 1970,every 1.5 yearsthe cost of kWh
dropped 5%.Since then it is constant.
Micro-electronics
Moore’s Law:“Every 1.5 yearsthe cost of a ‘bit’
drops 50%.”
June 30, 2015 db-1
Vision
Enable unprecedented growth of power electronics industryby developing an Integrated System Approach
viaIntegrated Power Electronics Modules,
to demonstrate 10-fold improvements inquality, reliability and cost effectiveness
of power electronics systems in 10 years.
SystemIntegration
IPEM
June 30, 2015 db-2a
• Use “Lego” approach to power electronics based on the concept of:
Integrated Power Electronics Module (IPEM)
“Jon Clare” approach to FUN
Vision
June 30, 2015 db-2b
Center for Power Electronics SystemsA National Science Foundation Engineering Research Center, 1998-2008
80 Industry Partners
Virginia Tech
Universityof Wisconsin
Madison
RensselaerPolytechnic
Institute
Universityof Puerto Rico
Mayaguez
NorthCarolina A&T State
University
Virginia Tech
SystemIntegration
IPEM
June 30, 2015 db-3
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008
Electronic Power Distribution SystemsDatacom Power Systems and Motor Drives
Center for Power Electronics SystemsA National Science Foundation Engineering Research Center
Gen. I Generation II Generation III Generation IVJune 30, 2015 db-4
Center for Power Electronics Systems
June 30, 2015 db-5a
Center for Power Electronics SystemsProfessors:
Fred C. Lee, DirectorDushan Boroyevich, Co-DirectorKhai D. T. NgoRolando BurgosQiang Li
Other:1 Adjunct/Affiliate Faculty 6 Research Associates4 Full-time Staff2 Part-time Staff
14 Visiting Scholars44 Doctoral Students
4 Masters StudentsAnnual Research Expenditures $4-5 million
June 30, 2015 db-5b
Center for Power Electronics SystemsProfessors:
Fred C. Lee, DirectorDushan Boroyevich, Co-DirectorKhai D. T. NgoRolando BurgosQiang Li
Other:1 Adjunct/Affiliate Faculty 6 Research Associates4 Full-time Staff2 Part-time Staff
14 Visiting Scholars44 Doctoral Students
4 Masters StudentsAnnual Research Expenditures $4-5 million
Technology Areas
Application Areas
Sustainable Energy Systems
VehicularPower Converter
Systems
Point-of-Load Conversion
Power Management for Computers &
Telecommunications
High Density Integration
Modeling and Control
EMI and Power Quality
Power Electronics
Components
Power Conversion Topologies and Architectures
June 30, 2015 db-5c
Center for Power Electronics Systems
watts to megawattswatts to megawatts
Emerging Applications
Portable
DataCom
Ships
Airplanes Trains
Cars
GridPowerElectronics
Renewable Energy
MediumVoltageConverters
Technology Areas
Application Areas
Sustainable Energy Systems
VehicularPower Converter
Systems
Point-of-Load Conversion
Power Management for Computers &
Telecommunications
High Density Integration
Modeling and Control
EMI and Power Quality
Power Electronics
Components
Power Conversion Topologies and Architectures
June 30, 2015 db-5d
Emerging Aircraft Electric Power Systems (MEA)
PW Wheeler, JC Clare, et al., “An overview of the more electrical aircraft,” Proc. IME-G, Dec. 2012.
Fuel pumpsand oil pumps
on engineGearbox driven
generatorsGearbox drivenhydraulic pump
High pressureair “bleed” from
engine
Mechanical100 kW
Electrical200 kW
Hydraulic240 kW
Pneumatic1.2 MW
June 30, 2015 db-6a
Emerging Aircraft Electric Power Systems (MEA)
PW Wheeler, JC Clare, et al., “An overview of the more electrical aircraft,” Proc. IME-G, Dec. 2012.
> 1 MW
June 30, 2015 db-6b
Hybrid AC/DC Electronic Power Distribution Systems
±270 V
230 V360-800 Hz 115 V
400 Hz
28 V
June 30, 2015 db-7a
Hybrid AC/DC Electronic Power Distribution Systems
June 30, 2015 db-7b
Electronic Power Systems Integration• Electric energy is provided by power
electronics converters and is consumed by power electronics converters!
• Reduced size, weight, and fuel consumption by optimum sizing and utilization of sources, loads, and power distribution system.
• Subsystems integration is critical:– Line frequency (DC, 50/60/400 Hz)
Power conversion and power flow control– Low frequency (below switching frequency)
Voltage stability, voltage distortion– High frequency (switching frequency and above)
EMI, EMC
Power Grid
SWGR
June 30, 2015 db-8
Wide-Bandgap Silicon Carbide (SiC) Power Semiconductors Devices
1.1 eV 3.3 eVBand gap
1.5 W/cmK 4.9 W/cmKThermalconductivity
2.0 MV/cm0.3 MV/cmCritical E-field
Low HighDoping
VSSi SiC
High-voltage(≥ 1.2 kV);
High-temperature(≥ 200 °C);
Unipolar switches
SiCdevices
Conductionloss
Switchingloss
High-temp. operation
Improved power
density
State-of-the-artdevices
Si IGBT≤ 20 kHz, 150-175 °C
SiC FETs≥ 20 kHz, 200-250 °C
for 0.5 kV < Vdc < 1 kV
June 30, 2015 db-9
Smaller cooling system size
High-freq. passive components
Smaller passives sizes
High-temperature packaging
DeviceContinuous
Current Rating (datasheet)
TMAX (datasheet)Normalized Die
Area to Cree MOSFET
Cree SiC MOSFET (C2M0080120D)
31.6 A (25 ˚C);20 A (100 ˚C) 150 ˚C 1.00
Rohm SiC MOSFET (SCH2080KE)
35 A (25 ˚C);22 A (100 ˚C) 150 ˚C 1.21
GE SiC MOSFET(GE12N20L)
30 A (25 ºC);22.5 A (100 ºC) 200 ˚C 0.97
Fairchild SiC BJT(FSICBH057A120) 15 A 175 ˚C 0.64
GeneSiC SiC SJT (GA10JT12) 6 A (25 ˚C) 175 ˚C 0.33
Infineon N-On SiCJFET (IJW120R100T1)
26 A (25 ˚C);10 A (≤ 150 ˚C) 175 ˚C 1.29
SemiSouth N-Off SiCJFET (SJEP120R100)
17 A (100 ˚C);10 A (150 ˚C) 150 ˚C 0.43
SiC Switch Comparative Characterization
June 30, 2015 db-10a
DeviceContinuous
Current Rating (datasheet)
TMAX (datasheet)Normalized Die
Area to Cree MOSFET
Cree SiC MOSFET (C2M0080120D)
31.6 A (25 ˚C);20 A (100 ˚C) 150 ˚C 1.00
Rohm SiC MOSFET (SCH2080KE)
35 A (25 ˚C);22 A (100 ˚C) 150 ˚C 1.21
GE SiC MOSFET(GE12N20L)
30 A (25 ºC);22.5 A (100 ºC) 200 ˚C 0.97
Fairchild SiC BJT(FSICBH057A120) 15 A 175 ˚C 0.64
GeneSiC SiC SJT (GA10JT12) 6 A (25 ˚C) 175 ˚C 0.33
Infineon N-On SiCJFET (IJW120R100T1)
26 A (25 ˚C);10 A (≤ 150 ˚C) 175 ˚C 1.29
SemiSouth N-Off SiCJFET (SJEP120R100)
17 A (100 ˚C);10 A (150 ˚C) 150 ˚C 0.43
SiC Switch Comparative Characterization
1200 V SiCswitch
is faster than
1200 V SiIGBT
1200 V SiCswitch
has lowerconductionloss than
600 V SiMOSFET
June 30, 2015 db-10b
High-Power-Density, 10 kW Motor Drive with High-Temperature Modules
• High-temperature SiC modules• Sensorless control• Soft start• Fan load application
70 kHz 40 kHz
M
June 30, 2015 db-11
High-Power-Density, 10 kW Motor Drive with High-Temperature Modules
• High-temperature SiC modules• Sensorless control• Soft start• Fan load application
70 kHz 40 kHz
MØ = 21.5 cm
175 ºC Converter250ºC Converter
June 30, 2015 Tutorial: Is SiC a Game Changer? db-12a
Power Density:• Low-temperature
1.04 kW/lb• High-temperature
1.27 kW/lb• Thermal management
is 50% smaller for HT
High-Power-Density, 10 kW Motor Drive with High-Temperature Modules
• High-temperature SiC modules• Sensorless control• Soft start• Fan load application
70 kHz 40 kHz
MØ = 21.5 cm
26.5 mm
Inverter current (40A/div)
Rectifier current (40 A/div)
DC link voltage (200 V/div)
Input voltage (500 V/div)
June 30, 2015 Tutorial: Is SiC a Game Changer? db-12b
Interleaved High Power Density AFE Converter(15 kW, SiC, 2 Parallel Interleaved 3-phase Boost Rectifiers)
iA1
iC1
N R
A1B1
C1
A2B2
C2
VSC1
VSC2
iA2
*
*
iB1
iB2
*
*iC2
*
*
L1
L2
L3
LA1
iA
iB
iC
EMI Filter
LA2
LB1LB2
LC1LC2
15 kW @ 6.3 kW/l with θjmax = 250 ºC
EMI Filter
Power Modules:
June 30, 2015 db-13
High-Power High-Temperature Starter/Generator
S / G
Improved substrate layout to minimize loop inductances
Fabricated module with DC decoupling capacitors
SiC MOSSiC SBD
Thermistor
HT ceramic
caps
Fast & clean switchingTurn-on Turn-off
Hard switching w/ RG = 0 ΩFast di/dt & dv/dt with small VDS overshoot
June 30, 2015 db-14a
High-Power High-Temperature Starter/Generator
S / G
Improved substrate layout to minimize loop inductances
Fabricated module with DC decoupling capacitors
SiC MOSSiC SBD
Thermistor
HT ceramic
caps
Switching Lossis 10-20% of an equivalent IGBT
Module
0200400600800
10001200140016001800
0 10 20 30 40 50 60 70
June 30, 2015 db-14b
High-Power High-Temperature Starter/Generator
S / G
200 oC Operation
Switching at 100 kHz, 560 V
12 SiC MOSFETs, 4 SiC diodes200 oC, 1200 V, 120 A
Nomex HT insulation
TorlonHT plastic
HT ceramic caps
AlSiCbaseplate
50 kW Active Power Module
June 30, 2015 db-15
Reliability of Direct-Bond-Copper (DBC) Substrate
• DBC substrate fails in < 20 cycles
‐100
‐50
0
50
100
150
200
250
0 50 100 150 200
Tem
pera
ture
(C
)
Time (min)
13 min
13 min
Before temperature cycling
After temperature cycling
Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC
Cu
Al2O3
Crack
June 30, 2015 db-16
Reliability of Direct-Bond-Copper (DBC) Substrate
Cu
CuAl2O3
Direct-Bond-Copper Substrate
• DBC substrate fails in < 20 cycles
Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC
June 30, 2015 db-17a
Reliability of Direct-Bond-Copper (DBC) Substrate
Cu
CuAl2O3
Direct-Bond-Copper Substrate
Step-edge
Creating stepped edges
• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles
Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC
June 30, 2015 db-17b
Reliability of Direct-Bond-Copper (DBC) Substrate
Cu
CuAl2O3
Direct-Bond-Copper Substrate
Sealing MaterialStep-edge
Creating stepped edges Applying sealing material
• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles• With stepped-edge and Parylene HT sealant fails in ~ 300 cycles• With stepped-edge and Nysil sealant fails in ~ 1200 cycles
Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC
June 30, 2015 db-17c
Reliability of Direct-Bond-Copper (DBC) Substrate
Cu
CuAl2O3
Direct-Bond-Copper Substrate
Sealing MaterialStep-edge
Creating stepped edges Applying sealing material
• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles• With stepped-edge and Parylene HT sealant fails in ~ 300 cycles• With stepped-edge and Nysil sealant fails in ~ 1200 cycles
Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC
June 30, 2015 db-17d
Electronic Power Systems Integration
• Subsystems interaction is critical:– Line frequency (DC, 50/60/400 Hz)
Power conversion and power flow control– Low frequency (below switching frequency)
Voltage stability, voltage distortion– High frequency (switching frequency and above)
EMI, EMC
ldcsdc
dcdc
sdcldc
ldcdc ZZ
VVZZ
ZV
1
00 Nyquist
Criterion
Small-signal stability at DC interface:
Power Grid
SWGR
June 30, 2015 db-18a
Electronic Power Systems Integration
• Subsystems interaction is critical:– Line frequency (DC, 50/60/400 Hz)
Power conversion and power flow control– Low frequency (below switching frequency)
Voltage stability, voltage distortion– High frequency (switching frequency and above)
EMI, EMC
ac0lacsacac VZZIV
1
1
Generalized Nyquist Criterion
Small-signal stability at AC interface:
Power Grid
SWGR
June 30, 2015 db-18b
Small-signal AC Impedance in Synchronous Coordinates
lacZ
Mag
nitu
de[d
B]M
agni
tude
[dB]
Phas
e[d
eg]
Phas
e[d
eg]
-250
-1000
-180
0
180
-400
-180
0
180
1 101 102 1031 101 102 103
ZddZdq
Zqd Zqq
Frequency [Hz]
Constant Power Load Input Impedance
June 30, 2015 db-19
In-situ Small-signal AC Impedance Measurement in Synchronous Coordinates
June 30, 2015 db-20a
• System frequency:DC, 360-800 Hz
• System voltage:270 V dc, 114-230 V ac
• System power:250 kW
• Measurement frequency:40 Hz - 10 kHz
In-situ Small-signal AC Impedance Measurement in Synchronous Coordinates
• System frequency:DC, 50/60 Hz, 400 Hz
• System voltage:800 V dc, 460 V ac
• System power:100 kW
• Measurement frequency:0.1 Hz - 1 kHz
June 30, 2015 db-20b
Medium Voltage Impedance Measurement Unit
10 kV / 120 A SiC half-bridge
5 kV / 100 A H-bridge
► In-situ impedance measurements
vSZS ZLvL
iLiS vp
ip
Source Load
June 30, 2015 db-21a
Medium Voltage Impedance Measurement UnitSystem Ratings: 10 kV dc or 4.16 kV rms ac
300 A dc or rms acDC, 50 Hz, 60 Hz or 400 Hz
5 kV / 100 A H-bridge
Measurement frequency range: 0.1 Hz - 1 kHz
PEBB 2 PEBB 3PEBB 1
Control Cabinet
Reconfigurable Medium-voltage
IMU Busbar System
Source Terminals
LoadTerminals
June 30, 2015 db-21b
PEBB H-Bridge
Medium Voltage Impedance Measurement UnitSystem Ratings: 10 kV dc or 4.16 kV rms ac
300 A dc or rms acDC, 50 Hz, 60 Hz or 400 Hz
Measurement frequency range: 0.1 Hz - 1 kHz
PEBB 2 PEBB 3PEBB 1
Control Cabinet
Reconfigurable Medium-voltage
IMU Busbar System
Source Terminals
LoadTerminals
June 30, 2015 db-21c
PEBB H-Bridge
PEBB 3
PEBB 2
PEBB 1SiC
SiC
SiC
Series PEBB ConnectionShunt Injection
Medium Voltage Impedance Measurement UnitSystem Ratings: 10 kV dc or 4.16 kV rms ac
300 A dc or rms acDC, 50 Hz, 60 Hz or 400 Hz
Measurement frequency range: 0.1 Hz - 1 kHz
PEBB 2 PEBB 3PEBB 1
Control Cabinet
Reconfigurable Medium-voltage
IMU Busbar System
Source Terminals
LoadTerminals
June 30, 2015 db-21d
PEBB H-Bridge
PEBB 3
PEBB 2
PEBB 1SiC
SiC
SiC
Parallel PEBB ConnectionSeries Injection
Experimental AC System Stability Example
Zsdd ZlddZsddwith
decreased inverter
bandwidth
Experimentally Measured Interface Impedances
(Hz)
ZS ZL
June 30, 2015 db-22
Stable
Zsdd ZlddZsdd low bandwidth
Generalized Nyquist Diagrams and Time-domain Waveforms for AC System Stability Example
ZS ZL
June 30, 2015 db-23a
Stable
Zsdd ZlddZsdd low bandwidth
Generalized Nyquist Diagrams and Time-domain Waveforms for AC System Stability Example
ZS ZL
June 30, 2015 db-23b
Stable
Zsdd ZlddZsdd low bandwidth
Generalized Nyquist Diagrams and Time-domain Waveforms for AC System Stability Example
ZS ZL
Unstable with decreased inverter bandwidth
June 30, 2015 db-23c
Generalized Nyquist Diagrams and Time-domain Waveforms for AC System Stability Example
ZS ZL
Unstable with decreased inverter bandwidth
June 30, 2015 db-23d
Frequency Stability Study
Power Grid
SWGR
PLLPLL
sacZConstant Current Source Output Impedance
-50
0
50
-50
0
-180
0
180
1 101 102 1031 101 102 103
-180
0
180Mag
nitu
de[d
B]M
agni
tude
[dB]
Phas
e[d
eg]
Phas
e[d
eg]
ZddZdq
Zqd Zqq
Frequency [Hz]
June 30, 2015 db-24a
Frequency Stability Study
Power Grid
SWGR
PLLPLL
IAFE
VPCC
IVSI
Weak Grid
June 30, 2015 db-24b
Frequency Stability Study
Power Grid
SWGR
PLLPLL
IAFE
VPCC
IVSI
Weak Grid
θC1G12
G21θC2
θg
Gg1 Gg2
G22
~~
~
G11
June 30, 2015 db-24c
Electronic Power Systems Integration
• Subsystems interaction is critical:– Line frequency (DC, 50/60/400 Hz)
Power conversion and power flow control– Low frequency (below switching frequency)
Voltage stability, voltage distortion– High frequency (switching frequency and above)
EMI, EMC
Power Grid
SWGR
• Modeling, prediction, and design for EMC based on switching model simulations of the whole system impossible!
• Standards have questionable value for new technologies and new systems.
June 30, 2015 db-25
Bi-directional Battery Charger for PHEVwith MHz GaN Converter
3.3 kW, 500 kHz, GaN-based, Bidirectional Battery Charger
+
-
AC
Hi/Lo Caps
Gate drive
June 30, 2015 db-26a
Bi-directional Battery Charger for PHEVwith MHz GaN Converter
3.3 kW, 500 kHz, GaN-based, Bidirectional Battery Charger
+
-
AC
Hi/Lo Caps
Gate drive
June 30, 2015 db-26b
106 107-20
0
20
40
60
80
DCCM 100VDCDM 100V
500 kHz hardware test result
ABB MMC+
‐
Iground
Common-Mode EMI Issues at High-Power Testing
IMU PEBB with 10 kV, 120 A SiC MOSFET
Modules
PEBB
June 30, 2015 db-27a
ABB MMC+
‐
Iground
Common-Mode EMI Issues at High-Power Testing
IMU PEBB with 10 kV, 120 A SiC MOSFET
Modules
I grou
nd[A
]
0 0.02 0.04 0.06 0.08 0.1
-200
-100
0
100
200
time [s]
Measured Ground Current
June 30, 2015 db-27b
EMI “Un-terminated” Model Development
June 30, 2015 db-28a
EMI “Un-terminated” Behavioral Modeling
KNOWN
ZTEST
KNOWN
ZTEST
June 30, 2015 db-28b
EMI “Un-terminated” Behavioral Modeling
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
Measured
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dBu
A)
Measured
10k 50M 10k 50M
KNOWN
ZTEST
KNOWN
ZTEST
June 30, 2015 db-28c
EMI “Un-terminated” Behavioral ModelingTwo-port Network CM Model
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
Measured
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dBu
A)
Measured
10k 50M 10k 50M
KNOWN
ZTEST
KNOWN
ZTEST
June 30, 2015 db-28d
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
June 30, 2015 db-29a
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
June 30, 2015 db-29b
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
June 30, 2015 db-29c
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
June 30, 2015 db-29d
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
June 30, 2015 db-29e
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
i/p
(duB
A)
MeasuredPredicted
104 105 106 1070
10
20
30
40
50
60
70
80
90
100
Frequency (Hz)
Icm
o/p
(dB
uA)
MeasuredPredicted
10k 50M 10k 50M
CM “Un-Terminated” EMI Behavioral Model
June 30, 2015 db-29f
Interleaved High Power Density AFE Converter(15 kW, SiC, 2 Parallel Interleaved 3-phase Boost Rectifiers)
iA1
iC1
N R
A1B1
C1
A2B2
C2
VSC1
VSC2
iA2
*
*
iB1
iB2
*
*iC2
*
*
L1
L2
L3
LA1
iA
iB
iC
EMI Filter
LA2
LB1LB2
LC1LC2
15 kW @ 6.3 kW/l with θjmax = 250 ºC
EMI Filter
Power Modules:
DOESN’TWORK
June 30, 2015 db-30
Magnetic Near-field Coupling and Test Setup
(10 by 10 grid is utilized: 100 points)
Tested Toroid Inductor
(Iron Powder)
Near Field Probe
LF-R 50
Input Excitation
XY Table Position Indicator
X
Y
500 kHz
Input Wires
Coil direction
Input Wires12 1
2
3
4567
8
9
1011
Coil directions
db-31aJune 30, 2013
Magnetic Near-field Coupling and Test Setup
(10 by 10 grid is utilized: 100 points)
Tested Toroid Inductor
(Iron Powder)
Near Field Probe
LF-R 50
Input Excitation
XY Table Position Indicator
X
Y
500 kHz5 MHz
Input Wires
Coil direction
Input Wires12 1
2
3
4567
8
9
1011
Coil directions
db-31bJune 30, 2013
Magnetic Near-field Coupling and Test Setup
(10 by 10 grid is utilized: 100 points)
Tested Toroid Inductor
(Iron Powder)
Near Field Probe
LF-R 50
Input Excitation
XY Table Position Indicator
X
Y
500 kHz5 MHz20 MHz
Input Wires
Coil direction
Input Wires12 1
2
3
4567
8
9
1011
Coil directions
db-31cJune 30, 2013
Measured winding current:
LF-U 2,5 probe 1
9
18
27
36
Measured Current Distribution and Near-Field Prediction
db-32aJune 30, 2013
Measured Current Distribution and Near-Field Prediction
At high frequencies much of the current is conducted by turn-turn and turn-core capacitances.
db-32b
Measured winding current:
June 30, 2013
Measured winding current:
500kHz
Amplitude in Z directionAmplitude in XY surface Flux direction
Measured Current Distribution and Near-Field Prediction
At high frequencies much of the current is conducted by turn-turn and turn-core capacitances.
db-32cJune 30, 2013
Measured winding current:
Measured Current Distribution and Near-Field Prediction
At high frequencies much of the current is conducted by turn-turn and turn-core capacitances.
db-32d
20 MHz
Amplitude in Z directionAmplitude in XY surface Flux direction
June 30, 2013
Filter Transfer Gain
Position 2
Position 1
Single Stage LC Filter Transfer Gain Test
7 MHz
Inductor Impedance
db-33June 30, 2013
System Weight Estimation Tool
June 30, 2015 db-34a
System Weight Estimation Tool
June 30, 2015 db-34b
System Weight Estimation Tool
Weight AC: 378 kg Weight DC: 325 kg
June 30, 2015 db-34c
40 PRINCIPAL PLUS MEMBERSHIPS ($50 K/year)3M Company ABB, Inc. (x 2) ALSTOM TransportAltera – Enpirion Power Chicony Power Technology Co. Crane Aerospace & ElectronicsCSR Zhuzhou Institute Co., Ltd. Delta Electronics (x 3) Dowa Metaltech Co., Ltd.Eltek Emerson Network Power GE Global ResearchGE Power Conversion General Motors Company Groupe SAFRANHuawei Technologies Co., Ltd. (x 3) International Rectifier Keysight TechnologiesLinear Technology Macroblock, Inc. Mitsubishi Electric CorporationMurata Manufacturing Co., Ltd. NEC TOKIN Corporation Nissan Motor Co., Ltd.NXP Semiconductors Panasonic Corporation Richtek Technology CorporationRolls-Royce Siemens Corporate Research Sonos, Inc.Sumitomo Electric Industries, Ltd. Texas Instruments (x 2) The Boeing CompanyToyota Motor Eng. & Mfg. N. America United Technologies Res. Center
12 PRINCIPAL MEMBERS ($30 K/year) AcBel Polytech, Inc. Analog Devices China National Elec. Apparat. Res. Inst.Fairchild Semiconductor Corporation Halliburton Infineon Technologies Maxim Integrated Products MKS Instruments, Inc. ON SemiconductorPower Integrations, Inc. Toshiba Corporation ZTE Corporation
25 ASSOCIATE MEMBERS ($15 K/year)Calsonic Kansei Corporation Crown International Cummins, Inc.Delphi Electronics & Safety Dyson Technology Ltd. Eaton Corporation, Innovation CenterEfficient Power Conversion Ford Motor Company GHO Ventures, LLC Inventronics (Hangzhou) Inc. Johnson Controls, Inc. Lite-On Technology CorporationLS Industrial Systems Co., Ltd. MetaMagnetics, Inc. Microsoft CorporationNetPower Technologies, Inc. OSRAM Sylvania, Inc. Rockwell AutomationSchaffner EMV AG Shindengen Electric Mfg. Co., Ltd. Silergy TechnologyTDK-Lambda Corporation Toyota Motor Corporation United Silicon Carbide, Inc.Universal Lighting Technologies, Inc.
12 AFFILIATE MEMBERS (in-kind contributions or <$15 K/year) ANSYS, Inc. CISSOID Electronic Concepts, Inc.Mentor Graphics Corporation Plexim GmbH Powersim, Inc.Rohde & Schwarz SIMPLIS Technologies, Inc. Synopsys, Inc.Tektronix, Inc. Transphorm, Inc. VPT, Inc.
CPES Industry Consortium 84 Members
June 30, 2015 db-35
Power Electronics Future is Bright!• Essential for societal energy needs from:
Retinal ImplantJ. G. KassakianIPEC, Niigata,
2005
organ implantscarbon-free energyto …
Source: Shell Global Scenarios
% of PrimaryEnergy
0%
20%
40%
60%
80%
Coal
Nuclear
Oil
Gas
Hydro
Traditional (Wood, etc.)
Wind, PV,other
renewables
1850 1875 1900 1925 1950 1975 2000 2025 2050Courtesy of GE Global Technology Center Source: Shell Global Scenarios
% of PrimaryEnergy
0%
20%
40%
60%
80%
Coal
Nuclear
Oil
Gas
Hydro
Traditional (Wood, etc.)
Wind, PV,other
renewables
1850 1875 1900 1925 1950 1975 2000 2025 2050Courtesy of GE Global Technology Center
June 30, 2015 db-36a
Power Electronics Future is Bright!
June 30, 2015 db-36b