MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 162
Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
EDITORS:
J.T. Glass North Carolina State University, Raleigh, North Carolina, U.S.A.
R. Messier Pennsylvania State University, University Park, Pennsylvania, U.S.A.
N. Fujimori Sumitomo Electric Industries, Ltd., Itami, Hyogo, Japan
SPONSORS
Air Products and Chemicals Company Diamond Materials, Inc. Kobe Steel, Ltd. Norton Company Sumitomo Electric Industries, Ltd.
MITH^I M A T E R I A L S RESEARCH SOCIETY 1 У 1 | 1 \ | Э | p i t t s b u r g h , Pennsylvania
Contents
PREFACE
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PART I: INTRODUCTION TO DIAMOND FOR ELECTRONICS
*THE ELECTRONIC AND OPTICAL PROPERTIES OF DIAMOND; DO THEY FAVOUR DEVICE APPLICATIONS? 3
Alan T. Collins
•GROWTH OF DEVICE-QUALITY HOMOEPITAXIAL DIAMOND THIN FILMS 15 M.W. Geis
•EPITAXIAL GROWTH OF DIAMOND AND DIAMOND DEVICES 2 3 Naoji Fujimori, Takahiro Imai, Hideaki Nakahata, Hiromu Shiomi, and Yoshiki Nishibayashi
•ELECTRONIC PROPERTIES OF DIAMOND/NICKEL AND DIAMOND/BORON NITRIDE INTERFACES 3 5
Warren E. Pickett and Steven C. Erwin
STATUS OF g-SiC, DIAMOND AND C-BN SEMICONDUCTORS; COMPARISON OF A Si POWER FET TO A HYPOTHETICAL DIAMOND FET 43
Richard Koba and William Russell
•SIMPLE GRAPHITIC NETWORK MODELS OF "DIAMONDLIKE" CARBON 49 Michael A. Tamor and Ching-Hsong (George) Wu
PART II: DIAMOND GROWTH
•SYNTHESIS OF METASTABLE DIAMOND 61 Thomas R. Anthony
THERMODYNAMICS AND THE CVD OF DIAMOND 75 Walter A. Yarbrough
STUDIES OF DIAMOND GROWTH MECHANISMS IN A HOT FILAMENT REACTOR 8 5
C. Judith Chu, Benjamin J. Bai, Mark P. D'Evelyn, Robert H. Hauge, and John L. Margrave
ADSORPTION OF HYDROCARBON RADICALS ON THE HYDROGENATED DIAMOND SURFACE 91
Mark R. Pederson, Koblar A. Jackson, and Warren E. Pickett
MICROWAVE CVD OF DIAMOND USING METHANOL-RARE GAS MIXTURES 97 M. Buck, T.J. Chuang, J.H. Kaufman, and H. Seki
•Invited Paper
EFFECTS OF OXYGEN ON DIAMOND GROWTH 1 0 3 S t e p h e n J . H a r r i s a n d A n i t a M. W e i n e r
OXYGEN EFFECT IN DIAMOND DEPOSITION AT LOW TEMPERATURES 109 Y. L i o u , A . I n s p e k t o r , R. W e i m e r , D . K n i g h t , a n d R. M e s s i e r
MORPHOLOGY OF DIAMOND FILMS GROWN BY DC PLASMA J E T CVD 1 1 5 K a z u a k i K u r i h a r a , K e n - I c h i S a s a k i , M o t o n o b u K a w a r a d a , a n d N a g a a k i K o s h i n o
BIAS CONTROLLED HOT FILAMENT CHEMICAL VAPOR DEPOSITION OF DIAMOND THIN FILM ON VARIOUS SUBSTRATES 119
Y . H . L e e , G . - H . Ma, K . J . B a c h m a n n , a n d J . T . G l a s s
EFFECTS OF DIFFERENT CH4-H2 GAS COMPOSITIONS ON THE MORPHOLOGY AND GROWTH OF DIAMOND GROWN BY HOT FILAMENT CVD 1 2 7
E d w a r d N . F a r a b a u g h a n d A l b e r t F e l d m a n
A COMPARATIVE STUDY OF GAS CHEMISTRY IN METHANE/ HYDROGEN AND ACETYLENE/HYDROGEN GAS MIXTURES DURING НОТ-FILAMENT VAPOR DEPOSITION OF DIAMOND 1 3 3
C h i n g - H s o n g Wu, M.A. T a m o r , T . J . P o t t e r , a n d E .W. K a i s e r
IMTORTANCE OF FILAMENT REACTIVITY FOR CVD DIAMOND GROWTH 139 M. Sommer a n d F . W . S m i t h
DEPOSITION OF DIAMOND FILMS BY SCANNING OXY-ACETYLENE FLAME 14 5
Y o n h u a T z e n g , R i c h a r d P h i l l i p s , C h i n C . T i n , Y . C h e n , T . S r i v i n y u n o n , a n d C a l v i n C u t s h a w
DEPOSITION AND CHARACTERIZATION OF CARBON FILMS PRODUCED BY NITROGEN/ARGON MIXTURE RF SPUTTERING 1 5 1
C . J . T o r n g , T . Y e h , J . M . S i v e r t s e n , a n d J . H . J u d y
APPLICATION OF A THERMOBALANCE FOR STUDYING DEPOSITION K I N E T I C S OF DIAMOND FILMS 157
J e r r y C z a r n e c k i a n d D a v i d T h u m i m
CHARACTERIZATION OF HOLLOW-CATHODE DC DISCHARGE GROWTH OF DIAMOND: ROTATIONAL VIBRONIC EMISSION IN A C H . - H , DISCHARGE 1 6 3
H . N . C h u , A . R . L e f k o w , E . A . D e n H a r t o g , J . J a c o b s , P . S a n d s t r o m , L . W . A n d e r s o n , M.G . L a g a l l y , a n d J . E . L a w l e r
FREE-STANDING CVD DIAMOND SHAPES AND COATINGS 1 6 7 D o n a l d E . P a t t e r s o n , R o b e r t H . H a u g e , a n d J o h n L . M a r g r a v e
K r F * LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF DIAMOND 1 7 3 G e o r g e W. T y n d a l l a n d N i g e l P . H a c k e r
INVESTIGATIONS OF EXCIMER LASER EFFECTS ON CVD DIAMOND GROWTH 1 7 9
P e h r E . P e h r s s o n , H . H . N e l s o n , a n d F . G . C e l i i
LASER ASSISTED TECHNIQUES FOR DIAMOND AND DIAMONDLIKE THIN FILMS 18 5
A. Rengan, N. Biunno, J. Narayan, and P. Moyer
REGROWTH OF DAMAGED LAYERS IN DIAMOND PRODUCED BY ION IMPLANTATION 189
G.S. Sandhu, B. Liu, N.R. Parikh, J.D. Hunn, M.L. Swanson, Th. Wiehert, M. Deicher, H. Skudlik, W.N. Lennard, and I.V. Mitchell
SELECTIVE NUCLEATION OF SINGLE CRYSTAL CVD DIAMOND AND ITS APPLICABILITY TO SEMICONDUCTOR DEVICES 19 5
H. Kawarada, J.S. Ma, T. Yonehara, and A. Hiraki
THEORY AND EXPERIMENT: DEFECT STABILIZATION OF DIAMOND FILMS THROUGH MULTIPLE-REGROWTH 2 01
Y. Bar-Yam and T.D. Moustakas
PART III: CHARACTERIZATION AND PROPERTIES OF DIAMOND
NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY IN THE STUDY OF DIAMOND THIN FILMS 2 07
Karen Mary McNamara, K.K. Gleason, and M.W. Geis
PREDICTED INFRARED SPECTRUM AND X-RAY DIFFRACTION PATTERNS FOR DIAMOND POLYTYPES 213
Andrew W. Phelps, William Howard, William B. White, Karl E. Spear, and D. Huang
DOMAIN SIZE DETERMINATION IN DIAMOND THIN FILMS 219 Y.M. LeGrice, R.J. Nemanich, J.Т. Glass, Y.H. Lee, R.A. Rudder, and R.J. Markunas
CHARACTERIZATION OF THIN FILM AND SINGLE-CRYSTAL CVD DIAMOND BY ABSORPTION AND LUMINESCENCE SPECTROSCOPY 2 25
A.T. Collins, M. Kamo, and Y. Sato
EFFECT OF DOPING WITH NITROGEN AND BORON ON CATHODO-LUMINESCENCE OF CVD-DIAMOND 231
Y. Yokota, H. Kawarada, and A. Hiraki
PHOTOLUMINESCENCE SPECTROSCOPY OF DIAMOND FILMS 23 7 J.A. Freitas, Jr., J.E. Butler, S.G. Bishop, W.A. Carrington, and U. Strom
CW FOUR-WAVE MIXING IN SYNTHETIC DIAMOND 243 D.A. Redman and S.C. Rand
OPTICAL CHARACTERIZATION OF NICKEL IN DIAMOND 249 Maria Helena Nazare, A.J. Neves, and Gordon Davies
A STUDY OF THE ELECTRONIC STRUCTURE NEAR INDIVIDUAL DISLOCATIONS IN DIAMOND BY ENERGY-LOSS SPECTROSCOPY 255
J. Bruley and P.E. Batson
CHARACTERIZATION OF HEAVY METAL CONTAMINATION IN DIAMOND FILMS USING SIMS, TXRF, AND RBS 261
R.S. Hockett and James Knowles
INFRARED CHARACTERIZATION OF THE HYDROGEN ENVIRONMENTS IN DIAMOND THIN FILMS 267
Y.M. LeGrice, E.C. Buehler, R.J. Nemanich, J.Т. Glass, K. Kobashi, F. Jansen, M.A. Machonkin, and C.C. Tsai
IN-SITU CHARACTERIZATION OF THIN POLYCRYSTALLINE DIAMOND FILM QUALITY BY THERMAL WAVE AND RAMAN TECHNIQUES 273
R.W. Pryor, P.K. Kuo, L. Wei, R.L. Thomas, and P.L. Tal ley
INTRA- AND INTERGRANULAR FRACTURE OF DIAMOND THIN FILMS 279 H.A. Hoff, A.A. Morrish, W.A. Carrington, J.E. Butler, and B.B. Rath
FAR-INFRARED SPECTROSCOPY STUDY OF DIAMOND FILMS 2 85 A.J. Gatesman, R.H. Giles, G.C. Phillips, J. Waldman, L.P. Bourget, and R. Post
LASER EMISSION FROM NATURAL DIAMONDS 291 Lucilia Santos and Estela Pereira
PART IV: DIAMOND ELECTRICAL PROPERTIES, CONTACTS AND DEVICES
ELECTRICAL PROPERTIES OF HOMOEPITAXIAL DIAMOND FILMS 297 G.Sh. Gildenblat, S.A. Grot, C.W. Hatfield, C.R. Wronski, A.R. Badzian, T. Badzian, and R. Messier
ELECTRICAL PROPERTIES OF THIN FILM AND BULK DIAMOND TREATED IN HYDROGEN PLASMA 303
Sacharia Albin and Linwood Watkins DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF THIN FILM DIAMOND 3 09
K. Srikanth, S. Ashok, W. Zhu, A. Badzian, and R. Messier
N-TYPE DOPING AND DIFFUSION OF IMPURITIES IN DIAMOND 315 S.A. Kajihara, A. Antonelli, and J. Bernholc
DOING OF DIAMOND BY CO-IMPLANTATION WITH DOPANT ATOMS AND CARBON 321
G.S. Sandhu, C.T. Kao, M.L. Swanson, and W.K. Chu
CYCLIC-CLUSTER MINDO/3 COMPUTATIONS OF THE LATTICE CONSTANT AND BAND STRUCTURE OF BORON NITRIDE, DIAMOND AND SILICON CARBIDE 327
Lawrence C. Snyder, Arthur H. Edwards, and Peter Deak
ELECTRICAL CHARACTERIZATION OF METAL CONTACTS ON DIAMOND THIN FILMS 333
Dario Narducci, Jerome J. Cuomo, C. Richard Guarnieri, and Stanley J. Whitehair
ELECTRICAL CONTACTS TO POLYCRYSTALLINE В DOPED DIAMOND FILMS 341
K. Nishimura, K. Das, M. Iwase, J.T. Glass, and K. Kobashi
METALLIZATION OF SEMICONDUCTING DIAMOND: Mo, M o / A u AND M o / N i / A u 3 47
K . L . M o a z e d , J . R . Z e i d l e r , a n d M . J . T a y l o r
PROPERTIES OF CVD DIAMOND/METAL INTERFACE 3 5 3 Y u s u k e M o r i , H i r o s h i K a w a r a d a , a n d A k i o H i r a k i
BLUE LIKE DIAMOND LIGHT EMITTING DEVICES TO BE MASS-PRODUCED 3 5 9
M. K a d o n o , S . H a y a s h i , N . H i r o s e , K. I t o h , T . I n u s h i m a , a n d S . Y a m a z a k i
ELECTRICAL BEHAVIOR OF DIFFUSED I M P U R I T I E S IN DIAMOND SINGLE CRYSTALS 3 65
D a r i o N a r d u c c i a n d J e r o m e J . Cuomo
A DIAMOND S I L I C O N HETEROJUNCTION DIODE 3 7 1 C . L . E l l i s o n , R . M . C o h e n , a n d J . T . H o g g i n s
CARBON-SILICON HETEROJUNCTION DIODES FORMED BY C H . / A r r f PLASMA THIN FILM DEPOSITION ON S i SUBSTRATES 3 7 7
G . A . J . A m a r a t u n g a , W . I . M i l n e , A . P u t n i s , K . K . C h a n , K . J . C l a y , a n d M . E . W e i l a n d
DOPING EFFECT IN HYDROGENATED AMORPHOUS CARBON THIN FILMS BY ION IMPLANTATION 3 83
S . P . Wong a n d S h a o q i P e n g
OPTICAL BAND GAP OF DIAMOND-LIKE CARBON FILMS AS A FUNCTION OF RF SUBSTRATE BIAS 3 89
P .W. P a s t e l a n d W . J . V a r h u e
PART V : GROWTH AND CHARACTERIZATION OF S I L I C O N CARBIDE
•STEP-CONTROLLED EPITAXIAL GROWTH OF S i C 3 9 7 H i r o y u k i M a t s u n a m i , T e t s u z o U e d a , a n d H i r o n o r i N i s h i n o
LOW TEMPERATURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION (LTMOCVD) OF ELECTRONIC MATERIALS 4 09
A l a i n E . K a l o y e r o s , P a u l J . T o s c a n o , R i c h a r d B . R i z k , V i c t o r T u l c h i n s k y , a n d A l e x G r e e n e
GROWTH OF 6 H - S i C ON CVD-GROWN 3 C - S i C SUBSTRATES 4 1 5 Woo S i k Yoo a n d H i r o y u k i M a t s u n a m i
DOPED AMORPHOUS S i C , MIXED CARBIDE AND OXYCARBIDE THIN FILMS BY A LIQUID ROUTE 4 2 1
C - J C h u , E . L i i m a t t a , a n d J . D . M a c k e n z i e
» I n v i t e d P a p e r
LIQUID PHASE HOMOEPITAXIAL GROWTH OF 4 H - S i C CRYSTALS AND FABRICATION TECHNIQUES OF BLUISH-PURPLE L I G H T -EMITTING DIODES 4 27
Y. U e d a , T . N a k a t a , К . К о д а , Y . M a t s u s h i t a , Y . F u j i k a w a , T . U e t a n i , T . Y a m a g u c h i , a n d T . N i i n a
LOW TEMPERATURE SELECTIVE GROWTH OF S - S i C USING S i H 2 C l 2 / C 3 H g / H C l / H 2 GAS SYSTEM 4 3 3
Y. O h s h i t a
INFRARED STUDY OF AMORPHOUS-CRYSTALLINE PHASE TRANSITION IN AN ANNEALED AMORPHOUS HYDROGENATED SILICON-CARBON ALLOY FILM 4 3 9
D . K . B a s a a n d F . W . S m i t h
THE FORMATION OF HELICAL DISLOCATIONS IN S I L I C O N SUBSTRATES DURING EPITAXIAL DEPOSITION OF ß - S i C 44 5
M. A i n d o w , T . T . C h e n g , a n d P . P i r o u z
GROWTH OF EPITAXICAL S i C LAYERS ONTO ON- AND O F F - A X I S 6 H - S i C SUBSTRATES BY ION BEAM DEPOSITION 4 5 1
K . L . M o r e , S . P . W i t h r o w , Т . Е . H a y n e s , a n d R . A . Z u h r
SEM OBSERVATION OF GROWTH AND DEFECT FORMATION OF HETEROEPITAXIALLY GROWN S i C ON ( 1 0 0 ) S ILICON 4 5 7
B . M o l n a r a n d L . M . S h i r e y
PART V I : S I L I C O N CARBIDE: ELECTRICAL PROPERTIES, CONTACTS, AND DEVICES
«EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE 4 6 3
R o b e r t F . D a v i s , J . W . P a l m o u r , a n d J . A . Edmond
NATIVE DEFECTS, DIFFUSION, SELF-COMPENSATION, AND BORON DOPING IN CUBIC S I L I C O N CARBIDE 4 7 5
C. Wang, J . B e r n h o l c , a n d R . F . D a v i s
*SOME OBSERVATIONS ON THE ELECTRICAL CHARACTERIZATION OF THE HETEROEPITAXIALLY GROWN CUBIC S i C 4 8 1
B . M o l n a r a n d G. K e i n e r
DEEP-LEVEL DOMINATED ELECTRICAL CHARACTERISTICS OF Au CONTACTS ON ß - S i C 4 8 9
К. D a s , H . S . K o n g , J . В . P e t i t , J . W . B u m g a r n e r , L . G . M a t u s , a n d R . F . D a v i s
A NEW DEEP ACCEPTOR IN EPITAXIAL CUBIC S i C 4 9 5 J . A . F r e i t a s J r . a n d S . G . B i s h o p
ELECTRONIC STRUCTURE OF WIDE BANDGAP SEMICONDUCTOR INTERFACES: CUBIC S i C / A I N , S i C / B P , C/BN 5 0 1
W . R . L . L a m b r e c h t a n d B . S e g a l l
OHMIC CONTACTS ON ß - S i C 5 0 7 M . I . C h a u d h r y , W . B . B e r r y , a n d M . V . Z e l l e r
* I n v i t e d P a p e r
PART VII: OTHER WIDE BANDGAP SEMICONDUCTORS
•PERSPECTIVE ON GALLIUM NITRIDE 515 Jacques I. Pankove
GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY 525
R.C. Powell, G.A. Tomasch, Y.-W. Kim, J. A. Thornton, and J.E. Greene
MICROSTRUCTURAL AND OPTICAL CHARACTERIZATION OF GaN FILMS GROWN BY PECVD ON (0001) SAPPHIRE SUBSTRATES 531
T.P. Humphreys, C.A. Sukow, R.J. Nemanich, J.В. Posthill, R.A. Rudder, S.V. Hattangady, and R.J. Markunas
STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY 53 7
Z. Sitar, M.J. Paisley, B. Yan, and R.F. Davis
•CUBIC BORON NITRIDE CRYSTALS GROWN AT HIGH PRESSURE: pn JUNCTION, CRYSTALLOGRAPHIC POLARITY AND SOME PROPERTIES 543
Osamu Mishima
CUBIC BORON NITRIDE AS A NEW SEMICONDUCTOR FOR OPTOELECTRONICS: LUMINESCENCE PROPERTIES AND POTENTIALITIES 555
Koh Era and Osamu Mishima
VIBRATIONAL SPECTROSCOPY OF BORON NITRIDE AT HIGH TEMPERATURES AND PRESSURES 561
Gregory J. Exarhos and Nancy J. Hess
GROWTH AND PHYSICAL PROPERTIES OF rf-MAGNETRON SPUTTERED InN SEMICONDUCTING FILMS 567
W.A. Bryden, J.S. Morgan, T.J. Kistenmacher, D. Dayan, R. Fainchtein, and Т.О. Poehler
SUBSTRATE AND TEMPERATURE DEPENDENT MORPHOLOGY OF rf-SPUTTERED INDIUM NITRIDE FILMS 57 3
T.J. Kistenmacher, D. Dayan, R. Fainchtein, W.A. Bryden, J.S. Morgan, and Т.О. Poehler
ELECTRON MICROSCOPY OF InN FILMS 579 J.S. Morgan, T.J. Kistenmacher, W.A. Bryden, and Т.О. Poehler
*BORON PHOSPHIDE AS A REFRACTORY SEMICONDUCTOR 585 Y. Kumashiro, M. Hirabayashi, and S. Takagi
THERMAL AND ION BEAM INDUCED REACTIONS IN Ni ON BP 59 5 Naoto Kobayashi, Yukinobu Kumashiro, Peter Revesz, Jian Li, and James W. Mayer
BORON PHOSPHIDE ON SILICON FOR RADIATION DETECTORS 601 J.C. Lund, F. Olschner, F. Ahmed, and K.S. Shah
•Invited Paper
MOCVD OF WIDE BANDGAP III-V SEMICONDUCTORS BY USING NOVEL PRECURSORS 60 5
Kwok-L. Ho, Klavs F. Jensen, Scott A. Hanson, John F. Evans, David C. Boyd, and Wayne L. Gladfelter
THE ROLE OF POLARITY ON THE STABILITY OF GRAPHITIC COMPOUNDS 611
Renata M. Wentzcovitch, Alessandra Continenza, and A.J. Freeman
ZnGeP2: A WIDE BANDGAP CHALCOPYRITE STRUCTURE SEMICONDUCTOR FOR NONLINEAR OPTICAL APPLICATIONS 615
G.C. Xing, K.J. Bachmann, J.В. Posthill, and M.L. Timmons
AUTHOR INDEX 621
SUBJECT INDEX 62 5
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 629