Design and development of thin double side silicon
microstrip sensors for CBM experiment
Mikhail MerkinSkobeltsyn Institute of Nuclear Physics
Moscow State University
3rd Work Meeting of the CBM-MPD STS Consortium
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor Geometry
– According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2
– Strip pitch for both sides - 58 μm– Stereoangle - ±7.5о
– Number of strips on both sides - 1024 – Number of readout chips for both sides -
8
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor N-side Contact Pads
3rd Work Meeting of the CBM-MPD STS Consortium
N-side poly-Si resistors
3rd Work Meeting of the CBM-MPD STS Consortium
N-side p-stops configuration
3rd Work Meeting of the CBM-MPD STS Consortium
N-side Guard Rings
1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia
Sensor P-side 1st and 2nd metal
3rd Work Meeting of the CBM-MPD STS Consortium
Sensor P-side 1st and 2nd metal details
3rd Work Meeting of the CBM-MPD STS Consortium
P-side Guard Rings
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor
3rd Work Meeting of the CBM-MPD STS Consortium
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor- p-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
3rd Work Meeting of the CBM-MPD STS Consortium
Baby sensor – n-side
Results
•Number of masks:•N-side – 8•P-side – 9
•Estimated production time - 3 months + 1 month for masks production.
3rd Work Meeting of the CBM-MPD STS Consortium
Expected
• Full Depletion Voltage (FDV) - <50 V• Working voltage – 70 - 250 V• Dark current at 100 V – < 15 nА/см2
• AC capacitance - >10 pF/см• Capacitors breakdown voltage -
>170 V• Bias resistor value - 1.0 ± 0.4 MOhm• Number of bad strips - <0.5%/side
3rd Work Meeting of the CBM-MPD STS Consortium