CU
RREN
T D
EVEL
OPM
ENTS
O
F TH
E V
ENU
SIO
N S
OU
RCE
IN R
ESEA
RCH
AN
D O
PERA
TIO
NS
ECRI
S 20
12Se
p27
, 201
2
J.Y. B
enite
z1 , K.
Y. F
ranz
en1 ,
C.M
. Lyn
eis1 ,
G. M
achi
coan
e2 , L.
Pha
ir1 ,
M
. St
rohm
eier
1 , an
d L.
T. Su
n3
1 Law
renc
e Be
rkel
ey N
atio
nal L
ab, B
erke
ley,
CA
, USA
2 Mic
higa
n St
ate
Uni
vers
ity, E
ast L
ansin
g, M
I, U
SA3 In
stitu
te o
f M
oder
n Ph
ysic
s, La
nzho
u, C
hina
Out
line
I.Q
uick
ove
rvie
w o
f V
ENU
S
II.Sp
utte
r pr
obe
test
res
ults
III.
LoT
Ove
n:
I.Bi
56+
for
cock
tails
II.Li
ner
test
& C
alci
um c
onsu
mpt
ion
IV.
Hig
h Vo
ltage
Upg
rade
& H
eliu
m R
esul
ts
V.
Plas
ma
cham
ber
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
VEN
US
Layo
ut o
n Va
ult R
oof
plas
ma
cham
ber
cryo
stat
bend
ing
mag
net
ECR
beam
line
AEC
R be
amlin
e
ECR
VEN
US
AEC
R-U
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
VEN
US
Miss
ion:
1.Pr
otot
ype
for
FRIB
2.Re
sear
ch to
ol3.
Inje
ctor
for
the
88”
cycl
otro
n
Ove
rvie
w o
f V
ENU
S Extra
ctio
n
4 C
ryoc
oole
rsH
e fil
l tub
e
Sext
upol
e
LN R
eser
voir
Sole
noid
s
•Ful
ly s
uper
cond
uctin
g, N
iobi
um-T
itani
um
sext
upol
e&
3 s
olen
oids
enc
lose
d in
LH
e•L
N R
eser
voir
: 70K
, diss
ipat
es h
eat f
rom
nor
mal
co
nduc
ting
lead
s•L
He
Rese
rvoi
r: 4.
2K•F
our t
wo
stag
e cr
yoco
oler
sw
hich
pro
vide
6W
to
tal c
oolin
g po
wer
at 4
.2K
, rec
onde
nse
evap
orat
ed H
e, 1
stst
age
(45K
) coo
ls pa
rt o
f th
e C
u le
ads
•Rec
ently
ran
22
mon
ths
stra
ight
MaximumInjectionField,onaxis
4.0T
MaximumExtractionField,onaxis
3.0T
MaximumRadialField,atwall
2.2T
ChamberDiameter
14cm
ChamberLength
50cm
18GHzMaximumPower
2kW
28GHzMaximumPower
10kW
28GHzMaximumPowerInjected
6.5kW
18+28GHzMaximumPowerInjected
8.5kW
Plas
ma
Cha
mbe
r
RF, O
ven,
Sp
utte
r Pr
obe
Feed
thro
ughs
LHe
Rese
rvoi
r
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
Sput
ter
Prob
e D
evel
opm
ent
Fo
r us
e in
coc
ktai
ls to
pro
vide
V, A
g, T
a, C
u, a
nd p
ossib
ly o
ther
s…
C
ockt
ail:
Mix
ture
of
ions
of
simila
r M
/Q d
eliv
ered
to c
yclo
tron
from
EC
R sim
ulta
neou
sly
D
irect
ion
sput
terin
g te
chni
que
Pl
asm
a io
ns a
ccel
erat
ed to
war
d sa
mpl
e im
pact
sur
face
and
sput
ter
mat
eria
l int
o pl
asm
a
C
apab
ility
will
mak
e V
ENU
S a
good
bac
kup
for
AEC
R-U
co
ckta
ils
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
Initi
al T
est R
esul
ts:
•Cu
plat
e m
ount
ed o
n bi
as d
isk
•At -
2000
V a
pplie
d vo
ltage
,
prod
uced
onl
y 2.
3eµA
of
63C
u15+
•Eno
ugh
for
chip
test
ing
but n
ot
easil
y re
mov
ed a
nd u
npra
ctic
al
10M
eV/u
M/Q
Prod
uctio
n M
etho
d
LET
(MeV
/(m
g/c
m2 )
)
RA
NG
E (µ
m)
11B3+
3.67
MIV
OC
CH
AM
BER
0.89
305.
7
18O
5+3.
60G
AS
2.19
226.
4
22N
e6+3.
67G
AS
3.49
174.
6
29Si
8+3.
63G
AS
6.09
141.
7
40A
r11+
3.64
GA
S9.
7413
0.1
51V
14+
3.
64Sp
utte
r Pr
obe
14.6
113.
4
65C
u18+
3.61
Sput
ter
Prob
e21
.210
8
84Kr
24+
3.5
GA
S30
.211
3.1
89Y25
+3.
56Sp
utte
r Pr
obe
34.7
102.
2
107 A
g29+
3.69
Sput
ter
Prob
e48
.290
.0
124 X
e34+
3.65
GA
S58
.890
.0
Sput
ter
Prob
e D
evel
opm
ent
grou
nd
-V-V
-V
+
+
+
++
plas
ma
024681012141618
1000
1200
1400
1600
1800
2000
Beam Current (eµA)
Sput
ter V
olta
ge (
-V)
VEN
US
Sput
ter
Prob
es: 18
1 Ta29
+
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
W
ater
-coo
led
supp
ort t
ube,
mov
eabl
e be
llow
s, 3
sam
ple
capa
bilit
y
In
itial
test
s po
sitiv
e
So
on le
arne
d po
sitio
n of
pro
be n
ot id
eal:
inse
rted
at f
lute
pos
ition
Ra
dial
pos
ition
is 5
.6cm
, cha
mbe
r ra
dius
is 7
.2cm
C
ompl
eted
Jul
y, 2
011
O
pera
tes
up to
650
°C to
vap
oriz
e m
etal
s
Ex
pand
s V
ENU
S’ m
etal
pro
duct
ion
capa
bilit
y
Ove
n D
evel
opm
ent:
Low
Tem
p
Cal
cium
Dev
elop
men
t: H
igh
Inte
nsity
av
gcu
rren
t of
100e
µA o
f 40
Ca11
+
U
sed
63m
g, c
onsu
mpt
ion
rate
of
0.67
mg/
hr
2%
eff
icie
ncy
into
40C
a11+
,~
9% to
tal
effic
ienc
y
G
ood
new
s fo
r hi
gh in
tens
ity 48
Ca
runs
whe
re
1mg
of 48
Ca~
$250
(63m
g~$1
5,75
0)
G
ood
effic
ienc
y =
No
liner
req
uire
d =
No
inte
rrup
tion
to c
ockt
ail r
uns
Bism
uth
Dev
elop
men
t:10
MeV
Coc
ktai
l
A
ccel
erat
ed20
9 Bi56
+, B
i57+, B
i58+
thro
ugh
cycl
otro
n
A
t cyc
lotro
n ex
tract
ion
had
0.08
enA
of
Bi56
+
In
crea
ses
max
imum
Lin
erEn
ergy
Tra
nsfe
r in
Si
licon
by 3
5% f
or o
ur 1
0MeV
Coc
ktai
l
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
inje
ctio
n
extr
actio
n
13
5
9
11 7
Ove
n D
evel
opm
ent:
Low
Tem
p +
Lin
er
280
300
320
340
360
380
400
420
440
012345
13/0
3/20
12 1
3:26
13/0
3/20
12 1
3:37
13/0
3/20
12 1
3:48
13/0
3/20
12 1
3:58
Sextupole Current (A)
Ta20+ (eµA)
Tim
e
111
93
57
Ta
ntal
umlin
erte
st 0
3/20
12in
atte
mpt
to
incr
ease
eff
icie
ncy
for
48C
a be
ams
3
laye
rs o
f 0.
003”
thic
k Ta
, 12”
long
U
sed
only
18G
Hz
heat
ing
at 1
8GH
z se
xtup
ole/
sole
noid
fie
lds
Pr
os:
Ø
Co
ns:
N
eede
dto
rai
se s
extu
pole
field
to 2
8GH
z fie
ld (4
60A
, 2.2
T) in
ord
er to
red
uce
Ta
peak
s in
spe
ctra
D
id n
ot in
crea
se e
ffic
ienc
y.
No
liner
: 0.6
7mg/
hr
With
line
r: 0.
73m
g/hr
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
No
whi
te C
aOre
sidue
form
ed o
n lin
er!
Hig
h Vo
ltage
Upg
rade
plas
ma
beam
ex
tract
ion
hole
Pulle
r (0
to -
10kV
)
Gro
und
shie
ld
@ H
V
•Sou
rce
wou
ld n
ot h
old
volta
ge a
bove
22k
V
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
Hig
h Vo
ltage
Upg
rade
Gro
und
shie
ld
@ H
V
•cle
aned
bur
ned
area
•Incr
ease
d H
V to
gro
und
shie
ld d
istan
ce•N
ew H
V p
ower
sup
ply
(40k
V, 2
5mA
)•H
ave
now
rea
ched
30k
V!
•lim
ited
by 2
8GH
z H
V
brea
k
New
Rec
ord
Ach
ieve
d:4 H
e1+: 9
.3em
A4 H
e2+: 1
1em
A
Sour
ce P
aram
eter
s:To
tal E
xtra
cted
: 25e
mA
@ 2
5kV
Inj.
Pres
sure
: 1x1
0-6m
bar
18G
Hz:
174
5W28
GH
z: 1
000W
Bias
Disk
: -33
5V, 5
8mA
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
Lim
ited
now
by
HV
pow
er
supp
ly!
VEN
US
Plas
ma
Cha
mbe
r
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
Bu
rned
a h
ole
in p
lasm
a ch
ambe
r at
7 o
’clo
ck p
ositi
on in
ject
ion
flute
M
easu
red
a w
all t
hick
ness
of
0.05
3” a
t thi
nnes
t loc
atio
n
Sa
me
loca
tion
as 2
005’
s 28
GH
z G
yrot
ron
acci
dent
. Thi
s ho
le
attr
ibut
ed to
mor
e co
ntin
uous
op
erat
ion
Im
port
ant t
o co
nsid
er fo
r V
ENU
S II
and
4thge
nera
tion
H 2O
Supp
ly
Retu
rn
Retu
rn
SR
R
S
RR
R
2012
2005
VEN
US
Plas
ma
Cha
mbe
r
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
In
vest
igat
ion
of th
e al
ignm
ent o
f ch
ambe
r to
sex
tupo
lem
agne
ts r
evea
led
that
ch
ambe
r sit
s hi
gh b
y 1m
m (4
0mils
)
Vacu
um
Vess
el
Sext
upol
e
H 2O
Supp
ly
Retu
rn
Retu
rn
Plas
ma
Cham
ber
Sole
noid
-
13
57
911
1850
0
1900
0
1950
0
2000
0
2050
0
2100
0
Flut
e Po
sitio
n
B [Gauss]
VEN
US
Sext
upol
e Fi
eld
at th
e W
all a
t Hol
e Lo
catio
nI=
460A
1
3
57
9
11
VEN
US
Plas
ma
Cha
mbe
r
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
In
spec
tion
of th
e m
ylar
insu
latio
n re
veal
s da
mag
e at
pos
ition
of
the
3 in
ject
ion
flute
s
H
igh
ener
gy x
-ray
s go
ing
thro
ugh
2mm
Ta
shee
t
9
laye
rs o
f 0.
015”
myl
arsh
eet
Re
duce
d to
6 la
yers
in
atte
mpt
to c
orre
ct
alig
nmen
t off
set o
f 1m
m
Sum
mar
y
FRIB
ECR
Req
uire
men
tsEl
emen
tI(
eμA)
VEN
US(
eμA)
Argo
n40
Ar8+
378
525
of 8
+Ca
lciu
m48
Ca11
+46
840
0 of
40Ca
11+
Xeno
n12
4 Xe18
+33
443
2of
26+
Bism
uth
209 B
i29+
422
300
of 3
1+U
rani
um23
8 U33
,34+
440
840
ECR
Gro
up: (
left
to r
ight
) J. B
enite
z, C
laud
e Ly
neis,
Mar
kus
Stro
hmei
er, K
en F
ranz
en
•VEN
US
usag
e in
ope
ratio
ns in
crea
sed
from
1.1
% in
200
7 to
17.
5% in
201
2 (~
850h
rs)
•We
cont
inue
to le
arn
and
wor
k to
war
ds im
prov
emen
ts!
Jani
lee
Beni
tez
EC
RIS1
2
Sep
tem
ber
27, 2
012
•VEN
US
satis
fied
mos
t FRI
B re
quire
men
ts•C
ontin
ue to
mak
e ad
vanc
es in
bea
m in
tens
ities
: H
e, U
(G. M
achi
coan
e’s
talk
)•L
oTov
en h
as s
ucce
eded
in p
rodu
cing
bea
ms
for
88”
rese
arch
ers
•Spu
tter
Prob
e st
ill in
dev
elop
men
t
Recommended
